DISCRETE SEMICONDUCTORS
BF992; BF992R
Silicon N-channel dual-gate
MOS-FETs
Product specification |
1996 Jul 30 |
Supersedes data of April 1991
File under Discrete Semiconductors, SC07
Philips Semiconductors |
Product specification |
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Silicon N-channel dual-gate MOS-FETs |
BF992; BF992R |
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APPLICATIONS
·VHF applications such as VHF television tuners and FM tuners with 12 V supply voltage. The device is also suitable for use in professional communications equipment.
DESCRIPTION
Depletion type field-effect transistor in a plastic micro-miniature SOT143 or SOT143R package with source and substrate interconnected.
The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.
CAUTION
The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
PINNING
PIN |
SYMBOL |
DESCRIPTION |
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1 |
s,b |
source |
2 |
d |
drain |
3 |
g2 |
gate 2 |
4 |
g1 |
gate 1 |
QUICK REFERENCE DATA
handbook, |
halfpage |
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g2 g1
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s,b |
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Top view |
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MAM039 |
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Marking code: M92. |
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Fig.1 |
Simplified outline (SOT143) and |
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symbol; BF992. |
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handbook, |
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3 |
4 |
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g2 |
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g1 |
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Top view |
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s,b |
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MAM040 |
Marking code: M52.
Fig.2 Simplified outline (SOT143R) and symbol; BF992R.
SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
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VDS |
drain-source voltage (DC) |
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20 |
V |
ID |
drain current (DC) |
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40 |
mA |
Ptot |
total power dissipation |
Tamb = 60 °C |
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200 |
mW |
ïYfsï |
forward transfer admittance |
f = 1 kHz; ID = 15 mA; VDS = 10 V; |
25 |
- |
mS |
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VG2-S = 4 V |
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Cig1-s |
input capacitance at gate 1 |
f = 1 MHz; ID = 15 mA; VDS = 10 V; |
4 |
- |
pF |
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VG2-S = 4 V |
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Crs |
reverse transfer capacitance |
f = 1 MHz; ID = 15 mA; VDS = 10 V; |
30 |
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fF |
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VG2-S = 4 V |
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F |
noise figure |
GS = 2 mS; ID = 15 mA; VDS = 10 V; |
1.2 |
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dB |
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VG2-S = 4 V; f = 200 MHz |
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Tj |
operating junction temperature |
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150 |
°C |
1996 Jul 30 |
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Philips Semiconductors |
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Product specification |
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Silicon N-channel dual-gate MOS-FETs |
BF992; BF992R |
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LIMITING VALUES |
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In accordance with the Absolute Maximum Rating System (IEC 134). |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VDS |
drain-source voltage |
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20 |
V |
ID |
drain current |
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40 |
mA |
±IG1 |
gate 1 current |
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10 |
mA |
±IG2 |
gate 2 current |
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10 |
mA |
Ptot |
total power dissipation |
up to Tamb = 60 °C; see Fig.3; note 1 |
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200 |
mW |
Tstg |
storage temperature |
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+150 |
°C |
Tj |
operating junction temperature |
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150 |
°C |
Note
1. Device mounted on a ceramic substrate, 8 mm × 10 mm × 0.7 mm.
MLA198
handbook, halfpage |
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200 |
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(2) |
(1) |
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Ptot max |
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(mW) |
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100 |
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0
0 |
100 |
200 |
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(o C) |
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amb |
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(1)BF992.
(2)BF992R.
Fig.3 Power derating curves.
1996 Jul 30 |
3 |
Philips Semiconductors |
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Product specification |
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Silicon N-channel dual-gate MOS-FETs |
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BF992; BF992R |
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THERMAL CHARACTERISTICS |
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SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-a |
thermal resistance from junction to ambient in free air |
note 1 |
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BF992 |
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460 |
K/W |
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BF992R |
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500 |
K/W |
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Note
1. Device mounted on a ceramic substrate, 8 mm ´ 10 mm ´ 0.7 mm.
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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±V(BR)G1-SS |
gate 1-source breakdown voltage |
VG2-S = VDS = 0; IG1-SS = ±10 mA |
8 |
20 |
V |
±V(BR)G2-SS |
gate 2-source breakdown voltage |
VG1-S = VDS = 0; IG2-SS = ±10 mA |
8 |
20 |
V |
-V(P)G1-S |
gate 1-source cut-off voltage |
VG2-S = 4 V; VDS = 10 V; ID = 20 mA |
0.2 |
1.3 |
V |
-V(P)G2-S |
gate 2-source cut-off voltage |
VG1-S = 0; VDS = 10 V; ID = 20 mA |
0.2 |
1.1 |
V |
±IG1-SS |
gate 1 cut-off current |
VG2-S = VDS = 0; VG1-S = ±7 V |
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25 |
nA |
±IG2-SS |
gate 2 cut-off current |
VG1-S = VDS = 0; VG2-S = ±7 V |
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25 |
nA |
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VDS = 10 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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ïyfsï |
forward transfer admittance |
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20 |
25 |
- |
mS |
Cig1-s |
input capacitance at gate 1 |
f = 1 MHz |
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4 |
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pF |
Cig2-s |
input capacitance at gate 2 |
f = 1 MHz |
- |
1.7 |
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pF |
Cos |
output capacitance |
f = 1 MHz |
- |
2 |
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pF |
Crs |
reverse transfer capacitance |
f = 1 MHz |
- |
30 |
40 |
fF |
F |
noise figure |
f = 200 MHz; GS = 2 mS |
- |
1.2 |
- |
dB |
1996 Jul 30 |
4 |
Philips Semiconductors |
Product specification |
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Silicon N-channel dual-gate MOS-FETs |
BF992; BF992R |
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24 |
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MGE797 |
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handbook, halfpage |
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ID |
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(mA) |
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20 |
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VG1-S |
= 0.2 V |
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16 |
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0.1 V |
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0 V |
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−0.1 V |
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−0.2 V |
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−0.3 V |
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4 |
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−0.4 V |
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−0.5 V |
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−0.6 V |
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VDS (V)
VG2-S = 4 V; Tj = 25 °C.
Fig.4 Output characteristics; typical values.
30 |
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MGE798 |
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handbook, halfpage |
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5 V |
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4 V |
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3 V |
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2 V |
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1 |
V |
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VG2-S = 0 |
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0 |
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ID (mA) |
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VDS = 10 V; Tj = 25 °C. |
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Fig.6 |
Forward transfer admittance as a function |
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of drain current; typical values. |
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30 |
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MGE799 |
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handbook, halfpage |
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4 V 3 V |
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ID |
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VG2 |
-S = |
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1 V |
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0 V |
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0− |
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VG1-S (V) |
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VDS = 10 V; Tj = 25 °C.
Fig.5 Transfer characteristics; typical values.
MGE800
30 handbook, halfpage
Yfs |
V |
G2-S |
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5 V
4 V
20
3 V
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2 V |
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1 V |
0−1 |
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0 V |
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VG1-S (V) |
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VDS = 10 V; Tj = 25 °C.
Fig.7 Forward transfer admittance as a function of gate 1-source voltage; typical values.
1996 Jul 30 |
5 |
Philips Semiconductors |
Product specification |
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Silicon N-channel dual-gate MOS-FETs |
BF992; BF992R |
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MGE794
102 handbook, halfpage
yis (mS)
10
bis
1
gis
10−1
10−2 |
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f (MHz) |
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VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C.
Fig.8 Input admittance as a function of frequency; typical values.
MGE795
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handbook, halfpage |
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gfs |
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f (MHz) |
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VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C.
Fig.10 Forward transfer admittance as a function of frequency; typical values.
MGE793
10 |
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handbook, halfpage |
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yos |
bos |
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gos
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10−2
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102 |
f (MHz) |
103 |
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VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C.
Fig.9 Output admittance as a function of frequency; typical values.
MGE796
120 handbook, halfpage
yrs (μS)
80
−brs
40
grs
0
10 |
102 |
103 |
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f (MHz) |
VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C.
Fig.11 Reverse transfer admittance as a function of frequency; typical values.
1996 Jul 30 |
6 |
Philips Semiconductors |
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Product specification |
Silicon N-channel dual-gate MOS-FETs |
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BF992; BF992R |
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PACKAGE OUTLINES |
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3.0 |
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handbook, full pagewidth |
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2.8 |
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B |
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1.9 |
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0.75 |
0.090 |
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A |
0.2 M A B |
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0.60 |
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4 |
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10 o |
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0.1 |
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1.4 |
2.5 |
max |
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1.2 |
max |
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10 o |
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max |
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1 |
2 |
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1.1 |
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|
|
|
|
0.1 M A B MBC845 |
|
max |
30 |
o |
0.88 |
0 |
0.48 |
0 |
||
|
|
|
|
|||||
|
max |
0.1 |
0.1 |
|
|
|||
|
|
|
|
1.7 |
|
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|
|
|
TOP VIEW |
|
|
|
|
Dimensions in mm. |
|
|
|
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|
|
|
|
Fig.12 SOT143.
|
|
|
|
3.0 |
|
|
handbook, full pagewidth |
0.150 |
|
2.8 |
B |
|
|
|
|
1.9 |
|
|
||
0.40 |
0.090 |
|
A |
0.2 M A |
||
|
|
|||||
0.25 |
|
|
|
|
|
|
|
|
|
3 |
4 |
|
|
10 o |
|
0.1 |
|
|
|
|
|
max |
|
|
1.4 |
2.5 |
|
max |
|
10 o |
|
|
1.2 |
max |
|
|
|
|
|
|
|
|
|
max |
|
|
|
|
|
|
|
2 |
1 |
|
|
1.1 |
|
|
0.48 |
0.88 |
|
|
max |
30 |
o |
0.38 |
0.78 |
MBC844 |
|
|
|
|
|
|
|
|
|
max |
|
1.7 |
|
|
|
|
|
|
0.1 M |
B |
|
|
|
|
|
|
TOP VIEW |
|
|
Dimensions in mm.
Fig.13 SOT143R.
1996 Jul 30 |
7 |
Philips Semiconductors |
|
Product specification |
|
|
|
Silicon N-channel dual-gate MOS-FETs |
BF992; BF992R |
|
|
|
|
DEFINITIONS |
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|
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|
Data Sheet Status |
|
|
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|
Objective specification |
This data sheet contains target or goal specifications for product development. |
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|
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Preliminary specification |
This data sheet contains preliminary data; supplementary data may be published later. |
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|
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|
Product specification |
This data sheet contains final product specifications. |
|
|
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|
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Jul 30 |
8 |