DISCRETE SEMICONDUCTORS
handbook, 2 columns
M3D118
BYM99
Ultra fast low-loss
controlled avalanche rectifier
Product specification |
1996 Feb 19 |
Supersedes data of June 1994
File under Discrete Semiconductors, SC01
Philips Semiconductors |
Product specification |
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Ultra fast low-loss
BYM99
controlled avalanche rectifier
FEATURES
∙Glass passivated
∙Low leakage current
∙Excellent stability
∙Guaranteed avalanche energy absorption capability
∙Available in ammo-pack
∙Also available with preformed leads for easy insertion.
LIMITING VALUES
DESCRIPTION |
This package is hermetically sealed |
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Rugged glass SOD64 package, using |
and fatigue free as coefficients of |
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expansion of all used parts are |
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a high temperature alloyed |
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matched. |
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construction. |
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k |
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MAM104 |
Fig.1 Simplified outline (SOD64) and symbol.
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VRRM |
repetitive peak reverse voltage |
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600 |
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VR |
continuous reverse voltage |
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600 |
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IF(AV) |
average forward current |
Ttp = 50 °C; lead length = 10 mm |
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1.8 |
A |
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see Fig. 2; |
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averaged over any 20 ms period; |
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see also Fig 6 |
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Tamb = 60 °C; PCB mounting (see |
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0.8 |
A |
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Fig.10); see Fig. 3; |
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averaged over any 20 ms period; |
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see also Fig. 6 |
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IFRM |
repetitive peak forward current |
Ttp = 50 °C; see Fig. 4 |
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15 |
A |
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Tamb = 60 °C; see Fig. 5 |
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7 |
A |
IFSM |
non-repetitive peak forward current |
t = 10 ms half sine wave; |
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40 |
A |
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Tj = Tj max prior to surge; |
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VR = VRRMmax |
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ERSM |
non-repetitive peak reverse |
L = 120 mH; Tj = Tj max prior to |
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10 |
mJ |
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avalanche energy |
surge; inductive load switched off |
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Tstg |
storage temperature |
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−65 |
+175 |
°C |
Tj |
junction temperature |
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−65 |
+150 |
°C |
1996 Feb 19 |
2 |
Philips Semiconductors |
Product specification |
|
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Ultra fast low-loss
BYM99
controlled avalanche rectifier
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
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TYP. |
MAX. |
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VF |
forward voltage |
IF = 3 A; Tj = Tj max; see Fig. 7 |
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1.95 |
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IF = 3 A; see Fig. 7 |
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3.60 |
V |
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V(BR)R |
reverse avalanche |
IR = 0.1 mA |
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700 |
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V |
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breakdown voltage |
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IR |
reverse current |
VR = VRRMmax; |
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mA |
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see Fig. 8 |
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VR = VRRMmax; Tj = 150 °C; |
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75 |
mA |
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see Fig. 8 |
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trr |
reverse recovery time |
when switched from IF = 0.5 A |
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15 |
ns |
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to IR = 1 A; measured at |
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IR = 0.25 A; see Fig. 12 |
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Cd |
diode capacitance |
f = 1 MHz; VR = 0 V; see Fig. 9 |
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135 |
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pF |
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dIR |
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maximum slope of reverse |
when switched from IF = 1 A to |
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A/ms |
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-------- |
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recovery current |
VR ³ 30 V and dIF/dt = -1 A/ms; |
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dt |
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see Fig.11 |
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THERMAL CHARACTERISTICS |
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SYMBOL |
PARAMETER |
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CONDITIONS |
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VALUE |
UNIT |
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Rth j-tp |
thermal resistance from junction to tie-point |
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lead length = 10 mm |
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25 |
K/W |
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Rth j-a |
thermal resistance from junction to ambient |
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note 1 |
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75 |
K/W |
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Note
1.Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ³40 mm, see Fig.10. For more information please refer to the ‘General Part of Handbook SC01’.
1996 Feb 19 |
3 |
Philips Semiconductors |
Product specification |
|
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Ultra fast low-loss
BYM99
controlled avalanche rectifier
GRAPHICAL DATA
MLB646
2.4 handbook, halfpage
I F(AV)
(A)
1.8
lead length 10 mm
1.2
0.6
0
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100 |
Ttp ( |
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C) |
200 |
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a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application.
Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
MLB647
2.0 handbook, halfpage
IF(AV)
(A)
1.6
1.2 |
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0.8 |
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0.4 |
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100 |
Tamb (oC) 200 |
a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.10. Switched mode application.
Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
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MLB648 |
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handbook, full pagewidth |
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I FRM |
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δ = 0.05 |
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(A) |
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0.1 |
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0.2 |
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0.5 |
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10 2 |
10 3 |
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10 4 |
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t p (ms) |
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Ttp = 50°C; Rth j-tp = 25 K/W. |
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VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Feb 19 |
4 |
Philips Semiconductors |
Product specification |
|
|
Ultra fast low-loss
BYM99
controlled avalanche rectifier
8 |
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MLB649 |
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handbook, full pagewidth |
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I FRM |
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(A) |
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δ = 0.05 |
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0.1 |
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0.2 |
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0.5 |
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10 1 |
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10 2 |
10 3 |
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10 4 |
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t p (ms) |
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Tamb = 60 °C; Rth j-a = 75 K/W. |
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VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V. |
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Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
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MGC546 |
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handbook, halfpage |
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P |
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(W) |
a=3 |
2.5 |
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1.57 |
1.42 |
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IF(AV) |
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(A) |
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Fig.6 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.
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MLB645 |
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handbook, halfpage |
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IF |
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(A) |
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VF (V) |
Dotted line: Tj = 150 °C.
Solid line: Tj = 25 °C.
Fig.7 Forward current as a function of forward voltage; maximum values.
1996 Feb 19 |
5 |
Philips Semiconductors |
Product specification |
|
|
Ultra fast low-loss
BYM99
controlled avalanche rectifier
MGC547
102 handbook, halfpage
IR
(μA)
10
1 |
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100 |
200 |
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0 |
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Tj (oC) |
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VR = VRRMmax. |
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Fig.8 |
Reverse current as a function of junction |
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temperature; maximum values. |
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50
handbook, halfpage
25
7 
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2
3
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2 |
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MGC548 |
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handbook, halfpage |
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Cd |
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(pF) |
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102 |
103 |
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1 |
10 |
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VR (V) |
f = 1 MHz; Tj = 25 °C.
Fig.9 Diode capacitance as a function of reverse voltage; typical values.
ndbook,I |
halfpage |
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F |
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dI F |
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dt |
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trr |
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10% |
t |
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dI R |
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dt |
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100% |
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IR |
MGC499 |
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MGA200
Dimensions in mm.
Fig.10 Device mounted on a printed-circuit board. |
Fig.11 Reverse recovery definitions. |
1996 Feb 19 |
6 |
Philips Semiconductors |
Product specification |
|
|
Ultra fast low-loss
BYM99
controlled avalanche rectifier
|
DUT |
IF |
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(A) |
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+ |
0.5 |
t rr |
10 Ω |
25 V |
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1 Ω |
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50 Ω |
0 |
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0.25 |
t |
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0.5 |
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IR |
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(A) |
MAM057 |
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1 |
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Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.12 Test circuit and reverse recovery time waveform and definition.
1996 Feb 19 |
7 |
Philips Semiconductors |
Product specification |
|
|
Ultra fast low-loss
BYM99
controlled avalanche rectifier
PACKAGE OUTLINE
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k |
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a |
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1.35 |
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max |
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4.5 |
28 min |
5.0 max |
28 min |
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max |
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Dimensions in mm.
The marking band indicates the cathode.
Fig.13 SOD64.
DEFINITIONS
Data Sheet Status
Objective specification |
This data sheet contains target or goal specifications for product development. |
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Preliminary specification |
This data sheet contains preliminary data; supplementary data may be published later. |
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Product specification |
This data sheet contains final product specifications. |
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Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Feb 19 |
8 |