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DISCRETE SEMICONDUCTORS

book, halfpage

M3D088

BAS19; BAS20; BAS21

General purpose diodes

Product specification

1996 Apr 16

Supersedes data of November 1993

File under Discrete Semiconductors, SC01

Philips Semiconductors

Product specification

 

 

 

 

General purpose diodes

BAS19; BAS20; BAS21

 

 

 

 

FEATURES

Small plastic SMD package

Switching speed: max. 50 ns

General application

Continuous reverse voltage: max. 100; 150; 200 V

Repetitive peak reverse voltage: max. 120; 200; 250 V

Repetitive peak forward current: max. 625 mA

Forward voltage: max. 1 V.

APPLICATIONS

General purpose switching in e.g. surface mounted circuits.

DESCRIPTION

The BAS19, BAS20, BAS21 are general purpose diodes fabricated in planar technology, and encapsulated in small plastic SMD SOT23 packages.

MARKING

TYPE NUMBER

MARKING

CODE

BAS19 JPp

BAS20 JRp

BAS21 JSp

PINNING

PIN

DESCRIPTION

 

 

1

anode

 

 

2

not connected

 

 

3

cathode

 

 

handbook,

2

1

2 1 n.c.

3

3

MAM185

Fig.1 Simplified outline (SOT23) and symbol.

1996 Apr 16

2

Philips Semiconductors

 

 

 

Product specification

 

 

 

 

 

 

 

General purpose diodes

 

BAS19; BAS20; BAS21

 

 

 

 

 

 

 

LIMITING VALUES

 

 

 

 

 

In accordance with the Absolute Maximum Rating System (IEC 134).

 

 

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

 

MIN.

MAX.

UNIT

 

 

 

 

 

 

 

VRRM

repetitive peak reverse voltage

 

 

 

 

 

 

BAS19

 

 

120

V

 

BAS20

 

 

200

V

 

BAS21

 

 

250

V

 

 

 

 

 

 

 

VR

continuous reverse voltage

 

 

 

 

 

 

BAS19

 

 

100

V

 

BAS20

 

 

150

V

 

BAS21

 

 

200

V

 

 

 

 

 

 

 

IF

continuous forward current

see Fig.2; note 1

 

200

mA

IFRM

repetitive peak forward current

 

 

625

mA

IFSM

non-repetitive peak forward current

square wave; Tj = 25 °C prior to

 

 

 

 

 

surge; see Fig.4

 

 

 

 

 

 

t = 1 μs

 

9

A

 

 

t = 100 μs

 

3

A

 

 

t = 10 ms

 

1.7

A

 

 

 

 

 

 

 

Ptot

total power dissipation

Tamb = 25 °C; note 1

 

250

mW

Tstg

storage temperature

 

 

65

+150

°C

Tj

junction temperature

 

 

150

°C

Note

1. Device mounted on an FR4 printed-circuit board.

1996 Apr 16

3

Philips Semiconductors

 

 

Product specification

 

 

 

 

 

 

General purpose diodes

BAS19; BAS20; BAS21

 

 

 

 

 

 

ELECTRICAL CHARACTERISTICS

 

 

 

 

Tj = 25 °C; unless otherwise specified.

 

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

 

 

 

 

 

 

VF

forward voltage

see Fig.3

 

 

 

 

 

IF = 100 mA

1.0

V

 

 

IF = 200 mA

1.25

V

IR

reverse current

see Fig.5

 

 

 

 

BAS19

VR = 100 V

100

nA

 

 

VR = 100 V; Tj = 150 °C

100

μA

 

BAS20

VR = 150 V

100

nA

 

 

VR = 150 V; Tj = 150 °C

100

μA

 

BAS21

VR = 200 V

100

nA

 

 

VR = 200 V; Tj = 150 °C

100

μA

Cd

diode capacitance

f = 1 MHz; VR = 0; see Fig.6

5

pF

trr

reverse recovery time

when switched from IF = 30 mA to

50

ns

 

 

IR = 30 mA; RL = 100 Ω;

 

 

 

 

 

measured at IR = 3 mA; see Fig.8

 

 

 

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

 

CONDITIONS

VALUE

UNIT

 

 

 

 

 

 

Rth j-tp

thermal resistance from junction to tie-point

 

 

330

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

 

500

K/W

Note

1. Device mounted on an FR4 printed-circuit board.

1996 Apr 16

4

Philips Semiconductors

Product specification

 

 

General purpose diodes

BAS19; BAS20; BAS21

 

 

GRAPHICAL DATA

MBG442

300 handbook, halfpage

IF (mA)

200

100

0

0

100

Tamb

o

C)

200

 

 

(

 

Device mounted on an FR4 printed-circuit board.

Fig.2 Maximum permissible continuous forward current as a function of ambient temperature.

MBG384

600 handbook, halfpage

IF (mA)

(1)

(2)

(3)

400

200

0

0

1

VF

(V)

2

 

 

 

(1)Tj = 150 °C; typical values.

(2)Tj = 25 °C; typical values.

(3)Tj = 25 °C; maximum values.

Fig.3 Forward current as a function of forward voltage.

MBG703

102 handbook, full pagewidth

IFSM

(A)

10

1

101

 

 

 

 

 

 

 

 

 

102

103

 

104

1

10

tp (μs)

 

 

 

 

 

 

 

Based on square wave currents.

Tj = 25 °C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

1996 Apr 16

5

Philips Semiconductors

Product specification

 

 

General purpose diodes

BAS19; BAS20; BAS21

 

 

MBG381

102 handbook, halfpage

IR

(μA)

10

(1)(2)

1

10 1

10 2

0

100

Tj

(

o

C)

200

 

 

 

(1)VR = VRmax; maximum values.

(2)VR = VRmax; typical values.

Fig.5 Reverse current as a function of junction temperature.

MBG445

300 handbook, halfpage

VR

(V)

(1)

200

(2)

(3)

100

0

0

100

Tamb

o

C)

200

 

 

(

 

(1)BAS21.

(2)BAS20.

(3)BAS19.

Fig.7 Maximum permissible continuous reverse voltage as a function of the

ambient temperature.

MBG447

1.0 handbook, halfpage

Cd (pF)

0.8

0.6

0.4

0.2

0

2

4

6 VR (V) 8

f = 1 MHz; Tj = 25 °C.

Fig.6 Diode capacitance as a function of reverse voltage; typical values.

1996 Apr 16

6

Philips Semiconductors

Product specification

 

 

General purpose diodes

BAS19; BAS20; BAS21

 

 

handbook, full pagewidth

 

t r

t p

 

 

 

 

 

 

 

t

 

 

D.U.T.

10%

 

 

R = 50 Ω

IF

 

I F

t rr

S

 

SAMPLING

 

t

 

 

OSCILLOSCOPE

 

 

 

 

 

V = VR IF x R S

 

R i = 50 Ω

 

 

 

 

 

90%

(1)

 

 

VR

 

 

 

 

 

 

 

MGA881

 

 

input signal

output signal

(1) IR = 3 mA.

Fig.8 Reverse recovery voltage test circuit and waveforms.

1996 Apr 16

7

Philips Semiconductors

Product specification

 

 

General purpose diodes

BAS19; BAS20; BAS21

 

 

PACKAGE OUTLINE

 

 

 

 

 

3.0

 

 

ok, full pagewidth

 

 

 

2.8

 

 

 

 

 

 

1.9

B

 

 

 

0.150

 

 

 

 

 

 

 

 

 

0.75

 

0.090

0.95

 

A

0.2 M A B

 

 

 

0.60

 

 

 

 

 

 

 

 

 

2

1

 

 

10o

 

0.1

 

 

 

 

 

max

 

 

1.4

2.5

max

 

 

 

 

 

 

 

1.2

max

 

 

10o

 

 

 

 

 

 

 

 

 

 

max

 

 

 

 

 

 

 

3

 

 

 

1.1

 

0

 

 

 

max

30o

 

 

 

0.48 0.1

 

0.1 M A B

MBC846

 

 

max

 

 

 

 

 

 

 

TOP VIEW

 

 

Dimensions in mm.

 

 

 

 

 

 

 

 

 

Fig.9 SOT23.

 

 

DEFINITIONS

 

 

 

 

 

 

Data Sheet Status

 

 

 

 

 

 

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification

This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

1996 Apr 16

8

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