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DISCRETE SEMICONDUCTORS

book, halfpage

M3D050

1N4531; 1N4532

High-speed diodes

Product specification

1996 Apr 03

Supersedes data of April 1992

File under Discrete Semiconductors, SC01

Philips Semiconductors

Product specification

 

 

 

 

High-speed diodes

1N4531; 1N4532

 

 

 

 

FEATURES

Hermetically sealed leaded glass SOD68 (DO-34) package

High switching speed: max. 4 ns

Continuous reverse voltage: max. 75 V

Repetitive peak reverse voltage: max. 75 V

Repetitive peak forward current: max. 450 mA

Forward voltage: max. 1 V.

APPLICATIONS

High-speed switching

Protection diodes in reed relays.

DESCRIPTION

The 1N4531, 1N4532 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass

SOD68 (DO-34) packages.

k

a

handbook, halfpage

MAM156

The diodes are type branded.

Fig.1 Simplified outline (SOD68; DO-34) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

 

 

 

 

 

 

VRRM

repetitive peak reverse voltage

 

75

V

VR

continuous reverse voltage

 

75

V

IF

continuous forward current

see Fig.2

200

mA

IFRM

repetitive peak forward current

 

450

mA

IFSM

non-repetitive peak forward current

square wave; Tj = 25 °C prior to

 

 

 

 

 

surge; see Fig.4

 

 

 

 

 

t = 1 μs

4

A

 

 

t = 1 ms

1

A

 

 

t = 1 s

0.5

A

 

 

 

 

 

 

Ptot

total power dissipation

Tamb = 25 °C

500

mW

Tstg

storage temperature

 

65

+200

°C

Tj

junction temperature

 

200

°C

1996 Apr 03

2

Philips Semiconductors

 

 

Product specification

 

 

 

 

 

 

 

High-speed diodes

 

1N4531; 1N4532

 

 

 

 

 

 

 

ELECTRICAL CHARACTERISTICS

 

 

 

 

Tj = 25 °C; unless otherwise specified.

 

 

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

 

 

 

 

 

 

 

VF

forward voltage

IF = 10 mA; see Fig.3

1000

mV

IR

reverse current

see Fig.5

 

 

 

 

 

IN4531

VR = 20 V

25

nA

 

 

 

VR = 20 V; Tj = 150 °C

50

μA

 

 

IN4532

VR = 50 V

100

nA

 

 

 

VR = 50 V; Tj = 150 °C

100

μA

Cd

diode capacitance

f = 1 MHz; VR = 0; see Fig.6

 

 

 

 

 

IN4531

 

4

pF

 

 

IN4532

 

2

pF

 

 

 

 

 

 

 

trr

reverse recovery time

when switched from IF = 10 mA to

 

 

 

 

 

IN4531

IR = 60 mA; RL = 100 Ω;

4

ns

 

 

IN4532

measured at IR = 1 mA; see Fig.7

2

ns

 

 

 

 

 

 

 

 

 

 

 

 

reverse recovery time

when switched from IF = 10 mA to

 

 

 

 

 

IN4532

IR = 10 mA; RL = 100 Ω;

4

ns

 

 

 

measured at IR = 1 mA; see Fig.7

 

 

 

Vfr

forward recovery voltage

when switched from IF = 100 mA;

3

V

 

 

 

tr 30 ns; see Fig.8

 

 

 

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

 

 

 

 

 

Rth j-tp

thermal resistance from junction to tie-point

lead length 5 mm

120

K/W

Rth j-a

thermal resistance from junction to ambient

lead length 5 mm; note 1

350

K/W

Note

1. Device mounted on a printed circuit-board without metallization pad.

1996 Apr 03

3

Philips Semiconductors

Product specification

 

 

High-speed diodes

1N4531; 1N4532

 

 

GRAPHICAL DATA

 

 

 

 

 

 

 

 

 

 

300

 

 

 

 

MBG450

600

 

 

 

MBG458

 

 

 

 

 

 

 

 

 

handbook, halfpage

 

 

 

 

 

handbook, halfpage

 

 

 

 

IF

 

 

 

 

 

IF

 

 

 

 

(mA)

 

 

 

 

 

(mA)

 

 

 

 

200

 

 

 

 

 

400

 

 

 

 

 

 

 

 

 

 

 

(1)

(2)

 

(3)

100

 

 

 

 

 

200

 

 

 

 

0

 

 

o

 

 

0

 

 

 

 

0

100

Tamb

C)

200

0

1

VF

(V)

2

 

 

(

 

 

 

 

 

(1)

Tj = 175 °C; typical values.

 

(2)

Tj = 25

°C; typical values.

Lead length 5 mm.

(3)

Tj = 25

°C; maximum values.

Fig.2 Maximum permissible continuous forward

 

Fig.3 Forward current as a function of

current as a function of ambient temperature.

 

 

forward voltage.

MBG704

102 handbook, full pagewidth

IFSM

(A)

10

1

101

1

10

102

103

tp (μs)

104

 

 

 

 

 

Based on square wave currents.

Tj = 25 °C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

1996 Apr 03

4

Philips Semiconductors

Product specification

 

 

High-speed diodes

1N4531; 1N4532

 

 

103

MGD010

 

 

handbook, halfpage

IR

(μA) 102

10

1

101

102

0

100

200

 

Tj

(oC)

VR = 50 V

Solid line; maximum values.

Dotted line; typical values.

Fig.5 Reverse current as a function of junction temperature.

MGD004

1.2 handbook, halfpage

Cd (pF)

1.0

0.8

0.6

0.4

0

10

VR

(V)

20

 

 

 

f = 1 MHz; Tj = 25 °C.

Fig.6 Diode capacitance as a function of reverse voltage; typical values.

1996 Apr 03

5

Philips Semiconductors

Product specification

 

 

High-speed diodes

1N4531; 1N4532

 

 

handbook, full pagewidth

 

t r

t p

 

 

 

 

 

 

 

t

 

 

D.U.T.

10%

 

 

R = 50 Ω

IF

 

I F

t rr

S

 

SAMPLING

 

t

 

 

 

 

 

OSCILLOSCOPE

 

 

 

 

 

V = VR IF x R S

 

R i = 50 Ω

 

 

 

 

 

90%

(1)

 

 

VR

 

 

 

 

 

 

 

MGA881

 

 

input signal

output signal

(1) IR = 1 mA.

Fig.7 Reverse recovery voltage test circuit and waveforms.

I

1 k Ω

450 Ω

 

 

I

90%

 

V

 

 

 

 

 

RS = 50 Ω

OSCILLOSCOPE

 

 

V fr

 

D.U.T.

Ω

 

 

 

 

R i = 50

 

 

 

 

 

10%

 

 

 

 

MGA882

 

 

t

t

 

 

t r

t p

 

 

 

 

 

input

 

output

 

 

 

signal

 

signal

Fig.8 Forward recovery voltage test circuit and waveforms.

1996 Apr 03

6

Philips Semiconductors

Product specification

 

 

High-speed diodes

1N4531; 1N4532

 

 

PACKAGE OUTLINE

 

handbook, full pagewidth

 

 

0.55

 

 

 

max

1.6

25.4 min

3.04

25.4 min

max

max

 

MSA212 - 1

 

 

 

Dimensions in mm.

Fig.9 SOD68 (DO-34).

DEFINITIONS

Data Sheet Status

Objective specification

This data sheet contains target or goal specifications for product development.

 

 

Preliminary specification

This data sheet contains preliminary data; supplementary data may be published later.

 

 

Product specification

This data sheet contains final product specifications.

 

 

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

1996 Apr 03

7

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