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DISCRETE SEMICONDUCTORS

book, halfpage

M3D070

BAS28

High-speed double diode

Product specification

1996 Apr 03

Supersedes data of November 1993

File under Discrete Semiconductors, SC01

Philips Semiconductors

Product specification

 

 

 

 

High-speed double diode

BAS28

 

 

 

 

FEATURES

Small plastic SMD package

High switching speed: max. 4 ns

Continuous reverse voltage: max. 75 V

Repetitive peak reverse voltage: max. 85 V

Repetitive peak forward current: max. 500 mA

Forward voltage: max. 1 V.

APPLICATIONS

High-speed switching in e.g. surface mounted circuits.

LIMITING VALUES

DESCRIPTION

The BAS28 consists of two high-speed switching diodes, fabricated in planar technology, and encapsulated in the small plastic SMD SOT143 package. The diodes are not connected.

PINNING

PIN

DESCRIPTION

 

 

1

cathode (k1)

 

 

2

cathode (k2)

 

 

3

anode (a2)

 

 

4

anode (a1)

 

 

handbook,

4

3

 

4 3

1 2

1 2

MAM059

Top view

Marking code: JTp.

Fig.1 Simplified outline (SOT143) and symbol.

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

 

 

 

 

 

 

VRRM

repetitive peak reverse voltage

 

85

V

VR

continuous reverse voltage

 

75

V

IF

continuous forward current

see Fig.2; note 1

215

mA

IFRM

repetitive peak forward current

 

500

mA

IFSM

non-repetitive peak forward current

square wave; Tj = 25 °C prior to

 

 

 

 

 

surge; see Fig.4

 

 

 

 

 

t = 1 μs

4

A

 

 

t = 1 ms

1

A

 

 

t = 1 s

0.5

A

 

 

 

 

 

 

Ptot

total power dissipation

Tamb = 25 °C; note 1

250

mW

Tstg

storage temperature

 

65

+150

°C

Tj

junction temperature

 

150

°C

Note

1. Device mounted on an FR4 printed-circuit board.

1996 Apr 03

2

Philips Semiconductors

 

 

Product specification

 

 

 

 

 

 

High-speed double diode

 

 

BAS28

 

 

 

 

 

 

ELECTRICAL CHARACTERISTICS

 

 

 

 

Tj = 25 °C; unless otherwise specified.

 

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

 

 

 

 

 

 

VF

forward voltage

see Fig.3

 

 

 

 

 

IF = 1 mA

715

mV

 

 

IF = 10 mA

855

mV

 

 

IF = 50 mA

1

V

 

 

IF = 150 mA

1.25

V

IR

reverse current

see Fig.5

 

 

 

 

 

VR = 25 V

30

nA

 

 

VR = 75 V

1

μA

 

 

VR = 25 V; Tj = 150 °C

30

μA

 

 

VR = 75 V; Tj = 150 °C

50

μA

Cd

diode capacitance

f = 1 MHz; VR = 0; see Fig.6

1.5

pF

trr

reverse recovery time

when switched from IF = 10 mA to

4

ns

 

 

IR = 10 mA; RL = 100 Ω;

 

 

 

 

 

measured at IR = 1 mA; see Fig.7

 

 

 

Vfr

forward recovery voltage

when switched from IF = 10 mA;

1.75

V

 

 

tr = 20 ns; see Fig.8

 

 

 

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

 

CONDITIONS

VALUE

UNIT

 

 

 

 

 

 

Rth j-tp

thermal resistance from junction to tie-point

 

 

360

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

 

500

K/W

Note

1. Device mounted on an FR4 printed-circuit board.

1996 Apr 03

3

Philips Semiconductors

Product specification

 

 

High-speed double diode

BAS28

 

 

GRAPHICAL DATA

MSA562 -1

250

IF (mA)

200

150

100

50

0

0

50

100

150

200

 

 

 

Tamb (oC)

Device mounted on an FR4 printed-circuit board.

Fig.2 Maximum permissible continuous forward current as a function of ambient temperature.

MBG382

300 handbook, halfpage

IF (mA)

(1)

(2)

(3)

200

100

0

0

1

VF

(V)

2

 

 

 

(1)Tj = 150 °C; typical values.

(2)Tj = 25 °C; typical values.

(3)Tj = 25 °C; maximum values.

Fig.3 Forward current as a function of forward voltage.

MBG704

102 handbook, full pagewidth

IFSM

(A)

10

1

101

1

10

102

103

tp (μs)

104

 

 

 

 

 

Based on square wave currents.

Tj = 25 °C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

1996 Apr 03

4

Philips Semiconductors

Product specification

 

 

High-speed double diode

BAS28

 

 

105

 

 

 

 

 

 

 

 

 

MGA884

 

0.8

 

 

 

 

 

 

 

MBG446

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

handbook, halfpage

 

 

 

 

 

 

 

 

 

IR

 

 

 

 

 

 

 

 

 

 

 

 

 

Cd

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(nA)

 

 

 

 

 

 

 

 

 

 

 

 

 

(pF)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

104

 

 

 

VR = 75 V

 

 

 

 

 

 

 

 

 

0.6

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

103

 

max

75

V

 

 

 

 

 

 

 

 

0.4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

102

 

 

 

25 V

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

typ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

typ

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

 

100

Tj ( o C)

200

 

0

 

4

8

12 VR (V) 16

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = 1 MHz; Tj = 25 °C.

 

 

 

 

 

 

 

 

Fig.5

Reverse current as a function of

 

Fig.6 Diode capacitance as a function of reverse

 

 

 

junction temperature.

 

 

 

 

voltage; typical values.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1996 Apr 03

5

Philips Semiconductors

Product specification

 

 

High-speed double diode

BAS28

 

 

handbook, full pagewidth

 

t r

t p

 

 

 

 

 

 

 

t

 

 

D.U.T.

10%

 

 

R = 50 Ω

IF

 

I F

t rr

S

 

SAMPLING

 

t

 

 

 

 

 

OSCILLOSCOPE

 

 

 

 

 

V = VR IF x R S

 

R i = 50 Ω

 

 

 

 

 

90%

(1)

 

 

VR

 

 

 

 

 

 

 

MGA881

 

 

input signal

output signal

(1) IR = 1 mA.

Fig.7 Reverse recovery voltage test circuit and waveforms.

I

1 k Ω

450 Ω

 

 

I

90%

 

V

 

 

 

 

 

RS = 50 Ω

OSCILLOSCOPE

 

 

V fr

 

D.U.T.

Ω

 

 

 

 

R i = 50

 

 

 

 

 

10%

 

 

 

 

MGA882

 

 

t

t

 

 

t r

t p

 

 

 

 

 

input

 

output

 

 

 

signal

 

signal

Fig.8 Forward recovery voltage test circuit and waveforms.

1996 Apr 03

6

Philips Semiconductors

Product specification

 

 

High-speed double diode

BAS28

 

 

PACKAGE OUTLINE

 

 

 

 

 

3.0

 

 

 

 

 

handbook, full pagewidth

 

0.150

2.8

 

 

B

 

 

 

 

1.9

 

 

 

 

 

 

0.75

0.090

 

 

A

 

0.2 M A B

 

 

 

 

 

 

 

 

 

 

 

 

 

0.60

 

 

 

 

 

 

 

 

 

 

 

 

4

3

 

 

 

 

10 o

 

 

0.1

 

 

 

1.4

2.5

 

max

 

 

max

 

 

 

 

 

 

 

 

 

 

1.2

max

 

 

 

 

 

 

 

 

 

 

 

 

10 o

 

 

 

 

 

 

 

 

 

max

 

 

 

 

 

 

 

 

 

 

1

2

 

 

 

 

 

1.1

 

 

 

 

 

0.1 M

A B

 

 

max

30

o

0

0.48

0

MBC845

 

 

 

 

 

 

 

 

max

0.88 0.1

0.1

 

 

 

 

 

 

 

1.7

 

 

 

 

 

 

 

 

 

TOP VIEW

 

 

 

 

Dimensions in mm.

 

 

 

 

 

 

 

 

 

 

 

 

 

Fig.9 SOT143.

 

 

 

 

DEFINITIONS

 

 

 

 

 

 

 

 

 

Data Sheet Status

 

 

 

 

 

 

 

 

 

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification

This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

 

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

1996 Apr 03

7

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