DISCRETE SEMICONDUCTORS
book, halfpage
M3D114
1PS302
High-speed double diode
Product specification |
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1996 Apr 03 |
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File under Discrete Semiconductors, SC01 |
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Philips Semiconductors |
Product specification |
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High-speed double diode |
1PS302 |
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FEATURES
∙Very small plastic SMD package
∙High switching speed: max. 4 ns
∙Continuous reverse voltage: max. 80 V
∙Repetitive peak reverse voltage: max. 85 V
∙Repetitive peak forward current: max. 500 mA
∙Forward voltage: max. 1.2 V.
APPLICATIONS
∙High-speed switching in e.g. surface mounted circuits.
LIMITING VALUES
DESCRIPTION
The 1PS302 consists of two high-speed switching diodes connected in series, fabricated in planar technology, and encapsulated in the very small rectangular plastic SMD SC70 package.
PINNING
PIN |
DESCRIPTION |
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1 |
anode |
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2 |
cathode |
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3 |
common connection |
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2 |
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1 |
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2 
1
3
3
Top view |
MAM083 |
Marking code: C3.
Fig.1 Simplified outline (SC70) and symbol.
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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Per diode |
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VRRM |
repetitive peak reverse voltage |
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− |
85 |
V |
VR |
continuous reverse voltage |
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80 |
V |
IF |
continuous forward current |
single diode loaded; see Fig.2; |
− |
200 |
mA |
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note 1 |
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double diode loaded; see Fig.2; |
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170 |
mA |
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note 1 |
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IFRM |
repetitive peak forward current |
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500 |
mA |
IFSM |
non-repetitive peak forward current |
square wave; Tj = 25 °C prior to |
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surge |
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t = 1 μs |
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4 |
A |
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t = 1 s |
− |
0.5 |
A |
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Ptot |
total power dissipation |
Tamb = 25 °C; note 1 |
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300 |
mW |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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150 |
°C |
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Apr 03 |
2 |
Philips Semiconductors |
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Product specification |
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High-speed double diode |
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1PS302 |
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ELECTRICAL CHARACTERISTICS |
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Tj = 25 °C; unless otherwise specified. |
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SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
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Per diode |
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VF |
forward voltage |
see Fig.3 |
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IF = 1 mA |
610 |
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mV |
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IF = 10 mA |
740 |
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mV |
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IF = 50 mA |
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1.0 |
V |
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IF = 100 mA |
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1.2 |
V |
IR |
reverse current |
see Fig.4 |
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VR = 25 V |
− |
30 |
nA |
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VR = 80 V |
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0.5 |
μA |
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VR = 25 V; Tj = 150 °C |
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30 |
μA |
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VR = 80 V; Tj = 150 °C |
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100 |
μA |
Cd |
diode capacitance |
f = 1 MHz; VR = 0; see Fig.5 |
− |
1.5 |
pF |
trr |
reverse recovery time |
when switched from IF = 10 mA to |
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4 |
ns |
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IR = 10 mA; RL = 100 Ω; |
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measured at IR = 1 mA; see Fig.6 |
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Vfr |
forward recovery voltage |
when switched from IF = 10 mA; |
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1.75 |
V |
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tr = 20 ns; see Fig.7 |
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THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
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CONDITIONS |
VALUE |
UNIT |
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Rth j-tp |
thermal resistance from junction to tie-point |
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200 |
K/W |
Rth j-a |
thermal resistance from junction to ambient |
note 1 |
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415 |
K/W |
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Apr 03 |
3 |
Philips Semiconductors |
Product specification |
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High-speed double diode |
1PS302 |
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GRAPHICAL DATA
MBG443
300 handbook, halfpage
IF (mA)
200
(1)
(2)
100
0
0 |
100 |
Tamb |
o |
C) |
200 |
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Device mounted on an FR4 printed-circuit board.
(1)Single diode loaded.
(2)Double diode loaded.
Fig.2 Maximum permissible continuous forward current as a function of ambient temperature.
MBG380
102 handbook, halfpage
IR
(μA)
10
(1) |
(2) |
(3) |
1
10 1
10 2
0 |
100 |
Tj |
( |
o |
C) |
200 |
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(1)VR = 80 V; maximum values.
(2)VR = 80 V; typical values.
(3)VR = 25 V; typical values.
Fig.4 Reverse current as a function of junction temperature.
MBG382
300 handbook, halfpage
IF (mA)
(1) |
(2) |
(3) |
200
100
0
0 |
1 |
VF |
(V) |
2 |
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(1)Tj = 150 °C; typical values.
(2)Tj = 25 °C; typical values.
(3)Tj = 25 °C; maximum values.
Fig.3 Forward current as a function of forward voltage.
MBG446
0.8 handbook, halfpage
Cd (pF)
0.6
0.4
0.2
0
0 |
4 |
8 |
12 VR (V) 16 |
f = 1 MHz; Tj = 25 °C.
Fig.5 Diode capacitance as a function of reverse voltage; typical values.
1996 Apr 03 |
4 |
Philips Semiconductors |
Product specification |
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High-speed double diode |
1PS302 |
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handbook, full pagewidth |
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t r |
t p |
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t |
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D.U.T. |
10% |
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R = 50 Ω |
IF |
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I F |
t rr |
S |
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SAMPLING |
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t |
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OSCILLOSCOPE |
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V = VR IF x R S |
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R i = 50 Ω |
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90% |
(1) |
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VR |
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MGA881 |
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input signal |
output signal |
(1) IR = 1 mA.
Fig.6 Reverse recovery voltage test circuit and waveforms.
I |
1 k Ω |
450 Ω |
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I |
90% |
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V |
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RS = 50 Ω |
OSCILLOSCOPE |
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V fr |
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D.U.T. |
Ω |
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R i = 50 |
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10% |
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MGA882 |
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t |
t |
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t r |
t p |
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input |
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output |
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signal |
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signal |
Fig.7 Forward recovery voltage test circuit and waveforms.
1996 Apr 03 |
5 |
Philips Semiconductors |
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Product specification |
High-speed double diode |
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1PS302 |
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PACKAGE OUTLINE |
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handbook, full pagewidth |
2.2 |
A |
1.35 |
B |
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1.8 |
1.15 |
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X |
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0.25 |
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0.10 |
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2.2 |
0.2 M B |
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2.0 |
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3 |
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0.2 |
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1.0 |
1.1 |
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0.8 0.1 |
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max |
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0.0 |
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1 |
0.40 |
2 |
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0.30 |
0.2 M A |
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0.3 |
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0.1 |
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0.65 |
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detail X |
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1.3 |
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MSA377 - 1 |
Dimensions in mm. |
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Fig.8 |
SC70. |
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DEFINITIONS |
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Data Sheet Status |
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Objective specification |
This data sheet contains target or goal specifications for product development. |
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Preliminary specification |
This data sheet contains preliminary data; supplementary data may be published later. |
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Product specification |
This data sheet contains final product specifications. |
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Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Apr 03 |
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