DISCRETE SEMICONDUCTORS
book, halfpage
M3D088
BAS29; BAS31; BAS35
General purpose controlled avalanche (double) diodes
Product specification |
1996 Apr 23 |
Supersedes data of November 1993
File under Discrete Semiconductors, SC01
Philips Semiconductors |
Product specification |
|
|
|
|
General purpose controlled avalanche
BAS29; BAS31; BAS35
(double) diodes
FEATURES
∙Small plastic SMD package
∙Switching speed: max. 50 ns
∙General application
∙Continuous reverse voltage: max. 90 V
∙Repetitive peak reverse voltage: max. 110 V
∙Repetitive peak forward current: max. 600 mA
∙Repetitive peak reverse current: max. 600 mA
∙Forward voltage: max. 1 V.
APPLICATIONS
∙General purpose switching in e.g. surface mounted circuits.
DESCRIPTION
General purpose switching diodes fabricated in planar technology, and encapsulated in small rectangular plastic SMD SOT23 packages.
The BAS29 consists of a single diode. The BAS31 has two diodes in series. The BAS35 has two diodes with a common anode.
MARKING
TYPE NUMBER |
MARKING |
|
CODE |
||
|
||
|
|
|
BAS29 |
L20 |
|
|
|
|
BAS31 |
L21 |
|
|
|
|
BAS35 |
L22 |
|
|
|
PINNING
PIN |
|
DESCRIPTION |
|
|
|
|
|
||
BAS29 |
BAS31 |
BAS35 |
||
|
||||
|
|
|
|
|
1 |
anode |
anode |
cathode (k1) |
|
|
|
|
|
|
2 |
not connected |
cathode |
cathode (k2) |
|
|
|
|
|
|
3 |
cathode |
common connection |
common anode |
|
|
|
|
|
handbook, |
|
|
2 |
|
|
|
|
|
|
|
1 |
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
2 |
|
|
|
|
|
|
1 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
3 |
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||
|
|
|
|
|
|
|
|
|
3 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
a. Simplified outline. |
|
|
c. BAS31 diode. |
|
|
||||||||||||||||
2 |
|
|
|
|
|
|
|
|
1 |
2 |
|
|
|
|
|
|
1 |
|||||
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||||||
|
|
n.c. |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||
|
|
|
|
|
3 |
|
|
|
|
3 |
|
|
|
|||||||||
|
b. BAS29 diode. |
|
|
d. BAS35 diode. |
|
|
||||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
MAM233 |
|
Fig.1 Simplified outline (SOT23) and symbols.
1996 Apr 23 |
2 |
Philips Semiconductors |
Product specification |
|
|
General purpose controlled avalanche
BAS29; BAS31; BAS35
(double) diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
|
|
|
|
|
|
Per diode |
|
|
|
|
|
|
|
|
|
|
|
VRRM |
repetitive peak reverse voltage |
|
- |
110 |
V |
VR |
continuous reverse voltage |
|
- |
90 |
V |
IF |
continuous forward current |
single diode loaded; see Fig.2; |
- |
250 |
mA |
|
|
note 1 |
|
|
|
|
|
|
|
|
|
|
|
double diode loaded; see Fig.2; |
- |
150 |
mA |
|
|
note 1 |
|
|
|
|
|
|
|
|
|
IFRM |
repetitive peak forward current |
|
- |
600 |
mA |
IFSM |
non-repetitive peak forward current |
square wave; Tj = 25 °C prior to |
|
|
|
|
|
surge; see Fig.4 |
|
|
|
|
|
t = 1 ms |
- |
10 |
A |
|
|
t = 100 ms |
- |
4 |
A |
|
|
t = 1 s |
- |
0.75 |
A |
|
|
|
|
|
|
Ptot |
total power dissipation |
Tamb = 25 °C; note 1 |
- |
250 |
mW |
IRRM |
repetitive peak reverse current |
|
- |
600 |
mA |
ERRM |
repetitive peak reverse energy |
tp ³ 50 ms; f £ 20 Hz; Tj = 25 °C |
- |
5.0 |
mJ |
Tstg |
storage temperature |
|
-65 |
+150 |
°C |
Tj |
junction temperature |
|
- |
150 |
°C |
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Apr 23 |
3 |
Philips Semiconductors |
Product specification |
|
|
General purpose controlled avalanche
BAS29; BAS31; BAS35
(double) diodes
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
|
|
|
|
|
|
Per diode |
|
|
|
|
|
|
|
|
|
|
|
VF |
forward voltage |
see Fig.3 |
|
|
|
|
|
IF = 10 mA |
− |
750 |
mV |
|
|
IF = 50 mA |
− |
840 |
mV |
|
|
IF = 100 mA |
− |
900 |
mV |
|
|
IF = 200 mA |
− |
1.0 |
V |
|
|
IF = 400 mA |
− |
1.25 |
V |
IR |
reverse current |
see Fig.5 |
|
|
|
|
|
VR = 90 V |
− |
100 |
nA |
|
|
VR = 90 V; Tj = 150 °C |
− |
100 |
μA |
V(BR)R |
reverse avalanche breakdown |
IR = 1 mA |
120 |
170 |
V |
|
voltage |
|
|
|
|
|
|
|
|
|
|
Cd |
diode capacitance |
f = 1 MHz; VR = 0; see Fig.6 |
− |
35 |
pF |
trr |
reverse recovery time |
when switched from IF = 30 mA to |
− |
50 |
ns |
|
|
IR = 30 mA; RL = 100 Ω; |
|
|
|
|
|
measured at IR = 3 mA; see Fig.7 |
|
|
|
THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
|
CONDITIONS |
VALUE |
UNIT |
|
|
|
|
|
|
Rth j-tp |
thermal resistance from junction to tie-point |
|
|
360 |
K/W |
Rth j-a |
thermal resistance from junction to ambient |
note 1 |
|
500 |
K/W |
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Apr 23 |
4 |
Philips Semiconductors |
Product specification |
|
|
General purpose controlled avalanche
BAS29; BAS31; BAS35
(double) diodes
GRAPHICAL DATA
MBG440
300 handbook, halfpage
IF (mA)
(1)
200
100
(2)
0
0 |
100 |
Tamb |
o |
C) |
200 |
|
|
( |
|
Device mounted on an FR4 printed-circuit board.
(1)Single diode loaded.
(2)Double diode loaded.
Fig.2 Maximum permissible continuous forward current as a function of ambient temperature.
MBH280
600 handbook, halfpage
IF (mA)
400
(1) (2) (3)
200
0
0 |
1 |
VF (V) |
2 |
|
|
|
(1)Tj = 150 °C; typical values.
(2)Tj = 25 °C; typical values.
(3)Tj = 25 °C; maximum values.
Fig.3 Forward current as a function of forward voltage.
MBH327
102 handbook, full pagewidth
IFSM
(A)
10
1
10−1
1 |
10 |
102 |
103 |
tp (μs) |
104 |
|
|
|
|
|
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Apr 23 |
5 |
Philips Semiconductors |
Product specification |
|
|
General purpose controlled avalanche
BAS29; BAS31; BAS35
(double) diodes
102 |
MBH282 |
|
handbook, halfpage
IR
(μA)
10
(1)(2)
1
10−1
10−2
0 |
100 |
Tj |
( |
o |
C) |
200 |
|
|
|
(1)VR = 90 V; maximum values.
(2)VR = 90 V; typical values.
Fig.5 Reverse current as a function of junction temperature.
MGD003
40 handbook, halfpage
Cd (pF)
30
20
10
0
0 |
10 |
20 |
30 |
|
|
VR |
(V) |
f = 1 MHz; Tj = 25 °C.
Fig.6 Diode capacitance as a function of reverse voltage; typical values.
handbook, full pagewidth |
|
t r |
t p |
|
|
|
|
||
|
|
|
t |
|
|
D.U.T. |
10% |
|
|
R = 50 Ω |
IF |
|
I F |
t rr |
S |
|
SAMPLING |
|
t |
|
|
|
||
|
|
OSCILLOSCOPE |
|
|
|
|
|
|
|
V = VR IF x R S |
|
R i = 50 Ω |
|
|
|
|
|
90% |
(1) |
|
|
VR |
|
|
|
|
|
|
|
|
|
MGA881 |
|
|
input signal |
output signal |
(1) IR = 3 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
1996 Apr 23 |
6 |
Philips Semiconductors |
Product specification |
|
|
General purpose controlled avalanche
BAS29; BAS31; BAS35
(double) diodes
PACKAGE OUTLINE
|
|
|
3.0 |
|
|
ok, full pagewidth |
|
|
2.8 |
|
|
|
|
|
1.9 |
B |
|
|
0.150 |
|
|
|
|
|
|
|
|
|
|
0.75 |
0.090 |
0.95 |
|
A |
0.2 M A B |
|
|
||||
0.60 |
|
|
|
|
|
|
|
2 |
1 |
|
|
10o |
0.1 |
|
|
|
|
max |
|
|
1.4 |
2.5 |
|
max |
|
|
|||
|
|
|
1.2 |
max |
|
|
10o |
|
|
||
|
|
|
|
|
|
|
max |
|
|
|
|
|
|
3 |
|
|
|
1.1 |
|
0 |
|
|
|
max |
30o |
|
|
|
|
0.48 0.1 |
|
0.1 M A B |
MBC846 |
||
|
max |
|
|
|
|
|
|
TOP VIEW |
|
|
|
Dimensions in mm. |
|
|
|
|
|
|
|
Fig.8 SOT23. |
|
|
|
DEFINITIONS |
|
|
|
|
|
Data Sheet Status |
|
|
|
|
|
Objective specification |
This data sheet contains target or goal specifications for product development. |
||||
Preliminary specification |
This data sheet contains preliminary data; supplementary data may be published later. |
||||
Product specification |
This data sheet contains final product specifications. |
||||
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Apr 23 |
7 |