DISCRETE SEMICONDUCTORS
M3D102
BAW56W
High-speed double diode
Product specification |
1996 Apr 04 |
Supersedes data of December 1993
File under Discrete Semiconductors, SC01
Philips Semiconductors |
Product specification |
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High-speed double diode |
BAW56W |
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FEATURES
∙Very small plastic SMD package
∙High switching speed: max. 4 ns
∙Continuous reverse voltage: max. 75 V
∙Repetitive peak reverse voltage: max. 85 V
∙Repetitive peak forward current: max. 500 mA
∙Forward voltage: max. 1 V.
APPLICATIONS
∙High-speed switching in e.g. surface mounted circuits.
LIMITING VALUES
DESCRIPTION
The BAW56W consists of two high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in the very small plastic SMD SOT323 package
PINNING
PIN |
DESCRIPTION |
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1 |
cathode (k1) |
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2 |
cathode (k2) |
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3 |
common anode |
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2 |
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1 |
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2 
1
3
3
MAM092
Top view
Marking code: A1.
Fig.1 Simplified outline (SOT323) and symbol.
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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Per diode |
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VRRM |
repetitive peak reverse voltage |
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85 |
V |
VR |
continuous reverse voltage |
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75 |
V |
IF |
continuous forward current |
single diode loaded; see Fig.2; |
− |
150 |
mA |
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note 1 |
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double diode loaded; see Fig.2; |
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130 |
mA |
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note 1 |
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IFRM |
repetitive peak forward current |
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500 |
mA |
IFSM |
non-repetitive peak forward current |
square wave; Tj = 25 °C prior to |
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surge; see Fig.4 |
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t = 1 μs |
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4 |
A |
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t = 1 ms |
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1 |
A |
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t = 1 s |
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0.5 |
A |
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Ptot |
total power dissipation |
Tamb = 25 °C; note 1 |
− |
200 |
mW |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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150 |
°C |
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Apr 04 |
2 |
Philips Semiconductors |
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Product specification |
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High-speed double diode |
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BAW56W |
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ELECTRICAL CHARACTERISTICS |
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Tj = 25 °C; unless otherwise specified. |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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Per diode |
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VF |
forward voltage |
see Fig.3 |
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IF = 1 mA |
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715 |
mV |
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IF = 10 mA |
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855 |
mV |
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IF = 50 mA |
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1 |
V |
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IF = 150 mA |
− |
1.25 |
V |
IR |
reverse current |
see Fig.5 |
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VR = 25 V |
− |
30 |
nA |
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VR = 75 V |
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1 |
μA |
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VR = 25 V; Tj = 150 °C |
− |
30 |
μA |
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VR = 75 V; Tj = 150 °C |
− |
50 |
μA |
Cd |
diode capacitance |
f = 1 MHz; VR = 0; see Fig.6 |
− |
2.0 |
pF |
trr |
reverse recovery time |
when switched from IF = 10 mA to |
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4 |
ns |
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IR = 10 mA; RL = 100 Ω; |
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measured at IR = 1 mA; see Fig.7 |
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Vfr |
forward recovery voltage |
when switched from IF = 10 mA; |
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1.75 |
V |
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tr = 20 ns; see Fig.8 |
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THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
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CONDITIONS |
VALUE |
UNIT |
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Rth j-tp |
thermal resistance from junction to tie-point |
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300 |
K/W |
Rth j-a |
thermal resistance from junction to ambient |
note 1 |
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625 |
K/W |
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Apr 04 |
3 |
Philips Semiconductors |
Product specification |
|
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High-speed double diode |
BAW56W |
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GRAPHICAL DATA |
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200 |
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MGA889 |
300 |
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MBG382 |
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handbook, halfpage |
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IF |
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IF |
single diode loaded |
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(mA) |
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(1) |
(2) |
(3) |
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(mA) |
double diode loaded |
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200 |
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100 |
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100 |
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0 |
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0 |
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0 |
1 |
VF (V) |
2 |
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0 |
100 |
Tamb (oC) |
200 |
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(1) |
Tj = 150 °C; typical values. |
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(2) |
Tj = 25 |
°C; typical values. |
Device mounted on an FR4 printed-circuit board. |
(3) |
Tj = 25 |
°C; maximum values. |
Fig.2 Maximum permissible continuous forward |
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Fig.3 Forward current as a function of |
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current as a function of ambient temperature. |
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forward voltage. |
MBG704
102 handbook, full pagewidth
IFSM
(A)
10
1
10−1
1 |
10 |
102 |
103 |
tp (μs) |
104 |
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Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Apr 04 |
4 |
Philips Semiconductors |
Product specification |
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High-speed double diode |
BAW56W |
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10 |
5 |
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MGA884 |
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2.5 |
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MBH191 |
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handbook, halfpage |
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IR |
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Cd |
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(nA) |
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2.0 |
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104 |
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VR = 75 V |
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1.5 |
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103 |
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max |
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75 |
V |
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1.0 |
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102 |
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25 V |
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0.5 |
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10 |
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5 |
10 |
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25 |
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Tj |
( o C) |
200 |
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0 |
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VR (V) |
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f = 1 MHz; Tj = 25 °C. |
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Fig.5 |
Reverse current as a function of |
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Fig.6 |
Diode capacitance as a function of reverse |
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junction temperature. |
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voltage; typical values. |
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1996 Apr 04 |
5 |
Philips Semiconductors |
Product specification |
|
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High-speed double diode |
BAW56W |
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|
handbook, full pagewidth |
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t r |
t p |
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t |
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D.U.T. |
10% |
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R = 50 Ω |
IF |
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I F |
t rr |
S |
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SAMPLING |
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t |
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OSCILLOSCOPE |
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V = VR IF x R S |
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R i = 50 Ω |
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90% |
(1) |
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VR |
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MGA881 |
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input signal |
output signal |
(1) IR = 1 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I |
1 k Ω |
450 Ω |
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V |
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I |
90% |
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RS = 50 Ω |
D.U.T. |
OSCILLOSCOPE |
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V fr |
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R i = 50 Ω |
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10% |
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MGA882 |
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t |
t |
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t r |
t p |
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input |
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output |
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signal |
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signal |
Fig.8 Forward recovery voltage test circuit and waveforms.
1996 Apr 04 |
6 |
Philips Semiconductors |
Product specification |
|
|
High-speed double diode |
BAW56W |
|
|
PACKAGE OUTLINE |
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1.00 |
|
andbook, full pagewidth |
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max |
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0.2 M |
A |
0.2 M B |
0.4 |
0.1 |
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max |
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0.2 |
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0.2 |
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3 |
A |
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2.2 |
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1.35 |
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2.0 |
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1.15 |
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1 |
2 |
0.3 |
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0.1 |
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1.4 |
0.25 |
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1.2 |
0.10 |
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2.2 |
B |
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1.8 |
MBC871 |
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Dimensions in mm. |
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Fig.9 SOT323. |
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DEFINITIONS |
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Data Sheet Status |
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Objective specification |
This data sheet contains target or goal specifications for product development. |
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Preliminary specification |
This data sheet contains preliminary data; supplementary data may be published later. |
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Product specification |
This data sheet contains final product specifications. |
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Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Apr 04 |
7 |