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DISCRETE SEMICONDUCTORS

ndbook, halfpage

M3D179

BAS216

High-speed switching diode

Product speciﬁcation

1996 Apr 03

Supersedes data of April 1995

File under Discrete Semiconductors, SC01

Philips Semiconductors	Product speciﬁcation


High-speed switching diode	BAS216

FEATURES

∙Small ceramic SMD package

∙High switching speed: max. 4 ns

∙Continuous reverse voltage: max. 75 V

∙Repetitive peak reverse voltage: max. 85 V

∙Repetitive peak forward current: max. 500 mA.

APPLICATIONS	DESCRIPTION
∙ High-speed switching in e.g.	The BAS216 is a high-speed
surface mounted circuits.	switching diode fabricated in planar
	technology, and encapsulated in the
	small rectangular ceramic SMD
	SOD110 package.

handbook, 4 columns			cathode mark
	k	k	a
a

bottom view

side view

top view

MAM139

Marking code: A6.

Fig.1 Simplified outline (SOD110) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT

VRRM	repetitive peak reverse voltage		−	85	V
VR	continuous reverse voltage		−	75	V
IF	continuous forward current	note 1	−	250	mA
IFRM	repetitive peak forward current		−	500	mA
IFSM	non-repetitive peak forward current	square wave; Tj = 25 °C prior to
		surge; see Fig.4
		t = 1 μs	−	4	A
		t = 1 ms	−	1	A
		t = 1 s	−	0.5	A

Ptot	total power dissipation	Tamb = 25 °C; see Fig.2; note 1	−	400	mW
Tstg	storage temperature		−65	+150	°C
Tj	junction temperature		−	150	°C

Note

1. Device mounted on an FR4 printed-circuit board.

1996 Apr 03

Philips Semiconductors				Product speciﬁcation

High-speed switching diode				BAS216

ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise speciﬁed.

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT

VF	forward voltage	see Fig.3
		IF = 1 mA	−	715	mV
		IF = 10 mA	−	855	mV
		IF = 50 mA	−	1	V
		IF = 150 mA	−	1.25	V
IR	reverse current	see Fig.5
		VR = 25 V	−	30	nA
		VR = 75 V	−	1	μA
		VR = 25 V; Tj = 150 °C	−	30	μA
		VR = 75 V; Tj = 150 °C	−	50	μA
Cd	diode capacitance	f = 1 MHz; VR = 0; see Fig.6	−	1.5	pF
trr	reverse recovery time	when switched from IF = 10 mA to	−	4	ns
		IR = 10 mA; RL = 100 Ω;
		measured at IR = 1 mA; see Fig.7
Vfr	forward recovery voltage	when switched from IF = 10 mA;	−	1.75	V
		tr = 20 ns; see Fig.8

THERMAL CHARACTERISTICS

SYMBOL	PARAMETER		CONDITIONS	VALUE	UNIT

Rth j-tp	thermal resistance from junction to tie-point			200	K/W
Rth j-a	thermal resistance from junction to ambient	note 1		315	K/W

Note

1. Device mounted on an FR4 printed-circuit board.

1996 Apr 03

Philips Semiconductors													Product speciﬁcation

High-speed switching diode																BAS216

GRAPHICAL DATA

500						MSA570		300								MBG382
500								300
								handbook, halfpage

									IF
									IF
Ptot								(mA)
								(mA)

(mW)								200			(1)	(2)			(3)
(mW)											(1)	(2)			(3)
250

								100







0								0







0		100		T	(oC) 200			0		1				VF (V)		2
				amb
								(1) Tj = 150 °C; typical values.
								(2) Tj = 25 °C; typical values.
Device mounted on an FR4 printed-circuit board.								(3) Tj = 25 °C; maximum values.
Fig.2 Maximum permissible total power dissipation									Fig.3	Forward current as a function of
as a function of ambient temperature.										forward voltage.


102																	MBG704
102
handbook, full	pagewidth
handbook, full
IFSM




(A)
10


1









10−1







							102			103						104
1			10				102			103			tp (μs)			104
													tp (μs)
Based on square wave currents.
Tj = 25 °C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

1996 Apr 03

Philips Semiconductors	Product speciﬁcation

High-speed switching diode	BAS216

MSA563

105

I R (nA)

104

V R = 75 V

75 V

103

25 V

102

100

Tj (oC)

200

Dotted line: maximum values.

Solid line: typical values.

Fig.5 Reverse current as a function of junction temperature.

MBH285

0.6 handbook, halfpage

Cd (pF)

0.5

0.4

0.2

0	4	8	12 V	R	(V) 16
				R

f = 1 MHz; Tj = 25 °C.

Fig.6 Diode capacitance as a function of reverse voltage; typical values.

1996 Apr 03

Philips Semiconductors	Product speciﬁcation

High-speed switching diode	BAS216

handbook, full pagewidth		t r	t p
		t r	t p
			t
	D.U.T.	10%
R = 50 Ω	IF		I F	t rr
S		SAMPLING		t
		SAMPLING
		OSCILLOSCOPE
		OSCILLOSCOPE
V = VR IF x R S		R i = 50 Ω
			90%	(1)
		VR	90%
		VR
		MGA881

input signal

output signal

(1) IR = 1 mA.

Fig.7 Reverse recovery voltage test circuit and waveforms.

1 k Ω

450 Ω

		I	90%		V
			90%
RS = 50 Ω	OSCILLOSCOPE				V fr
	D.U.T.	Ω
	R i = 50	Ω
		10%
	MGA882			t	t
		t r	t p
			input		output
			signal		signal

Fig.8 Forward recovery voltage test circuit and waveforms.

1996 Apr 03

Philips Semiconductors	Product speciﬁcation

High-speed switching diode	BAS216

MOUNTING

Reﬂow soldering

Follow standard reflow soldering techniques to ensure correct application of solder paste and placement of the SOD110 package (see Fig.9).

Wave soldering

Before wave soldering, attach SOD110 packages to the printed-circuit boards using a small dot of thermo-setting epoxy or UV-curing adhesive centred between the soldering lands (see Fig.10).

handbook, halfpage	3.00
handbook, halfpage
		1.25
1.00	1.00	MGC119

Dimensions in mm.

Fig.9 SOD110 reflow soldering pattern.

handbook, halfpage 3.40

		1.25
1.10	1.10	MGC126

Dimensions in mm.

Fig.10 SOD110 wave soldering pattern.

1996 Apr 03

Philips Semiconductors	Product speciﬁcation

High-speed switching diode	BAS216

PACKAGE OUTLINE

cathode mark

2.10

1.90

1.6 max

MSA323 - 1

1.40

1.10

0.1

Dimensions in mm.

Fig.11 SOD110.

DEFINITIONS

Data Sheet Status

Objective speciﬁcation	This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation	This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation	This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

1996 Apr 03

Philips Semiconductors	Product speciﬁcation

High-speed switching diode	BAS216

	NOTES

1996 Apr 03

Philips Semiconductors	Product speciﬁcation

High-speed switching diode	BAS216

	NOTES

1996 Apr 03

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