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Philips Semiconductors	Product specification

Triacs	BT134W series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated triacs in a plastic

SYMBOL

PARAMETER

MAX.

UNIT

envelope

suitable

for

surface

BT134W-

500

600

800

mounting, intended for use in

applications

requiring

high

VDRM

Repetitive peak off-state

500

600

800

bidirectional

transient

and

blocking

voltages

voltage capability and high thermal

IT(RMS)

RMS on-state current

cycling

performance.

Typical

ITSM

Non-repetitive peak on-state

applications

include

motor

control,

current

industrial

and domestic

lighting,

heating and static switching.

PINNING - SOT223

PIN CONFIGURATION

SYMBOL

DESCRIPTION

main terminal 1

main terminal 2

gate

tab

main terminal 2

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.		MAX.		UNIT

				-500	-600	-800
V	Repetitive peak off-state		-	5001	6001	800	V
DRM	voltages
	voltages
		full sine wave; Tsp ≤ 108 ˚C
IT(RMS)	RMS on-state current	full sine wave; Tsp ≤ 108 ˚C	-		1		A
ITSM	Non-repetitive peak	full sine wave; Tj = 125 ˚C prior
	on-state current	to surge; with reapplied VDRM(max)	-		10		A
		t = 20 ms	-		10		A
		t = 16.7 ms	-		11		A
I2t	I2t for fusing	t = 10 ms	-		0.5		A2s
dIT/dt	Repetitive rate of rise of	ITM = 1.5 A; IG = 0.2 A;
	on-state current after	dIG/dt = 0.2 A/μs					A/μs
	triggering	T2+ G+	-		50		A/μs
		T2+ G-	-		50		A/μs
		T2- G-	-		50		A/μs
		T2- G+	-		10		A/μs
IGM	Peak gate current		-		2		A
VGM	Peak gate voltage		-		5		V
PGM	Peak gate power		-		5		W
PG(AV)	Average gate power	over any 20 ms period	-		0.5		W
Tstg	Storage temperature		-40		150		˚C
Tj	Operating junction		-		125		˚C
	temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/μs.

February 1996

Rev 1.100

Philips Semiconductors	Product specification

Triacs	BT134W series

THERMAL RESISTANCES

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT

Rth j-sp	Thermal resistance	full or half cycle	-	-	15	K/W
	junction to solder point
Rth j-a	Thermal resistance	pcb mounted; minimum footprint	-	156	-	K/W
	junction to ambient	pcb mounted; pad area as in fig:14	-	70	-	K/W

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT

IGT	Gate trigger current	VD = 12 V; IT = 0.1 A	-	5	35	mA
		T2+ G+	-	5	35	mA
		T2+ G-	-	8	35	mA
		T2- G-	-	11	35	mA
		T2- G+	-	30	70	mA
IL	Latching current	VD = 12 V; IGT = 0.1 A	-	7	20	mA
		T2+ G+	-	7	20	mA
		T2+ G-	-	16	30	mA
		T2- G-	-	5	20	mA
		T2- G+	-	7	30	mA
IH	Holding current	VD = 12 V; IGT = 0.1 A	-	5	15	mA
VT	On-state voltage	IT = 2 A	-	1.2	1.5	V
VGT	Gate trigger voltage	VD = 12 V; IT = 0.1 A	-	0.7	1.5	V
		VD = 400 V; IT = 0.1 A; Tj = 125 ˚C	0.25	0.4	-	V
ID	Off-state leakage current	VD = VDRM(max); Tj = 125 ˚C	-	0.1	0.5	mA

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT

dVD/dt	Critical rate of rise of
	off-state voltage
dVcom/dt	Critical rate of change of
	commutating voltage
tgt	Gate controlled turn-on
	time

VDM = 67% VDRM(max); Tj = 125 ˚C;	100	250	-	V/μs
exponential waveform; gate open circuit				V/μs
VDM = 400 V; Tj = 95 ˚C; IT(RMS) = 1 A;	10	50	-	V/μs
dIcom/dt = 1.8 A/ms; gate open circuit				μs
ITM = 1.5 A; VD = VDRM(max); IG = 0.1 A;	-	2	-	μs
dIG/dt = 5 A/μs

February 1996

Rev 1.100

Philips Semiconductors	Product specification

Triacs	BT134W series

1.4	Ptot / W			BT134W		Tsp(max) / C 104
1.4	Ptot / W					Tsp(max) / C 104
1.2								107
							= 180
1			1					110
1							120	110
							120
0.8							90	113
0.8							60	113
							60
0.6							30	116
							30
0.4								119
0.2								122
0	0	0.2	0.4	0.6	0.8	1		125
	0	0.2	0.4	0.6	0.8	1		1.2
				IT(RMS) / A

Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle.

1000	ITSM / A		BT134W
				IT	ITSM
				T	time
100				Tj initial = 125 C max
		dIT/dt limit
		T2- G+ quadrant
10
1		100us	1ms	10ms	100ms
10us		100us	1ms	10ms	100ms
			T / s

Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms.

12	ITSM / A		BT134W
10			IT	ITSM
10
			T	time
8			Tj initial = 125 C max
6
4
2
0	1	10	100	1000
		Number of cycles at 50Hz

Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.

1.2	IT(RMS) / A		BT134W
1					108 C
1
0.8
0.6
0.4
0.2
0		0	50	100	150
-50		0	50	100	150
			Tsp / C

Fig.4. Maximum permissible rms current IT(RMS) , versus solder point temperature Tsp.

IT(RMS) / A		BT134W
2
1.5
1
0.5
0	0.1	1	10
0.01	0.1	1	10

surge duration / s

Fig.5. Maximum permissible repetitive rms on-state

current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tsp ≤ 108˚C.

	VGT(Tj)		BT136
1.6	VGT(25 C)		BT136
1.4
1.2
1
0.8
0.6
0.4		0	50	100	150
-50		0	50	100	150
			Tj /	C

Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

February 1996

Rev 1.100

Philips Semiconductors	Product specification

Triacs	BT134W series

	IGT(Tj)		BT136
3	IGT(25 C)		BT136
3	IGT(25 C)
				T2+ G+
2.5				T2+ G-
2.5				T2- G-
				T2- G-
2				T2- G+
2
1.5
1
0.5
0		0	50	100	150
-50		0	50	100	150
			Tj / C

Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

IL(Tj)
IL(25 C)		TRIAC
3
2.5
2
1.5
1
0.5
0	0	50	100	150
-50	0	50	100	150
		Tj / C
Fig.8.	Normalised latching current IL(Tj)/ IL(25˚C),
	versus junction temperature Tj.
IH(Tj)
3 IH(25C)		TRIAC
2.5
2
1.5
1
0.5
0	0	50	100	150
-50	0	50	100	150
		Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj.

2	IT / A	BT134W
2

Tj = 125 C

Tj = 25 C

1.5

Vo = 1.0 V

Rs = 0.21 Ohms

typ

max

0.5

0 0	0.5	1	1.5	2
		VT / V

Fig.10. Typical and maximum on-state characteristic.

100 Zth j-sp (K/W)			BT134W
10
		unidirectional
1			bidirectional
1
			P	t p
			D
0.1
						t
0.01	0.1ms	1ms	10ms	0.1s	1s	10s
10us	0.1ms	1ms	10ms	0.1s	1s	10s
			tp / s

Fig.11. Transient thermal impedance Zth j-sp, versus pulse width tp.

1000	dVcom/dt (V/us)
				off-state dV/dt limit
100
10
	dIcom/dt = 5.1	3.9	3	2.3	1.8	1.4
	A/ms
1	0	50	Tj / C		100	150
			Tj / C

Fig.12. Typical commutation dV/dt versus junction temperature, parameter commutation dIT/dt. The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dIT/dt.

February 1996

Rev 1.100

Philips Semiconductors	Product specification

Triacs	BT134W series

MOUNTING INSTRUCTIONS

PRINTED CIRCUIT BOARD

	Dimensions in mm.	Dimensions in mm.
3.8		36
3.8
min
1.5		18
min		18
min
	60
	4.6	4.5
	9
2.3	6.3
1.5
min	10
	10
(3x)
1.5
min
4.6		7
		15
	50

Fig.13. soldering pattern for surface mounting	Fig.14. PCB for thermal resistance and power rating
SOT223.	for SOT223.
	PCB: FR4 epoxy glass (1.6 mm thick), copper
	laminate (35 μm thick).

February 1996

Rev 1.100

Philips Semiconductors	Product specification

Triacs	BT134W series

MECHANICAL DATA

Dimensions in mm

Net Mass: 0.11 g

			6.7
			6.3	B
	0.32		3.1	B
	0.32		3.1			0.2	M	A
	0.24		2.9			0.2	M	A
	0.24		2.9
			4	A
	0.10
	0.02			3.7		7.3
				3.3		6.7
16	13
max
	10	1	2	3
	10
	max
1.8	1.05	2.3	0.80	0.1	M	B
max	0.85		0.60	0.1	M	B
max	0.85		0.60	(4x)
			4.6	(4x)
			4.6

Fig.15. SOT223 surface mounting package.

Notes

1.Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide.

2.Refer to surface mounting instructions for SOT223 envelope.

3.Epoxy meets UL94 V0 at 1/8".

February 1996

Rev 1.100

Philips Semiconductors	Product specification

Triacs	BT134W series

DEFINITIONS

Data sheet status

Objective specification	This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

February 1996

Rev 1.100

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