Philips Semiconductors |
Preliminary specification |
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Silicon Diffused Power Transistor |
BU2506DX |
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GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
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VCESM |
Collector-emitter voltage peak value |
VBE = 0 V |
- |
1500 |
V |
VCEO |
Collector-emitter voltage (open base) |
|
- |
700 |
V |
IC |
Collector current (DC) |
|
- |
5 |
A |
ICM |
Collector current peak value |
Ths ≤ 25 ˚C |
- |
8 |
A |
Ptot |
Total power dissipation |
- |
45 |
W |
|
VCEsat |
Collector-emitter saturation voltage |
IC = 3.0 A; IB = 1.0 A |
- |
1.0 |
V |
ICsat |
Collector saturation current |
IF = 3.0 A |
3.0 |
- |
A |
VF |
Diode forward voltage |
1.6 |
2.0 |
V |
|
tf |
Fall time |
ICM = 3.0 A; IB(end) = 0.67 A |
0.25 |
0.5 |
μs |
PINNING - SOT399 |
PIN CONFIGURATION |
SYMBOL |
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PIN |
DESCRIPTION |
case |
c |
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1 |
base |
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2 |
collector |
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b |
3 |
emitter |
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Rbe |
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case |
isolated |
1 2 3 |
e |
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LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VCESM |
Collector-emitter voltage peak value |
VBE = 0 V |
- |
1500 |
V |
VCEO |
Collector-emitter voltage (open base) |
|
- |
700 |
V |
IC |
Collector current (DC) |
|
- |
5 |
A |
ICM |
Collector current peak value |
|
- |
8 |
A |
IB |
Base current (DC) |
|
- |
3 |
A |
IBM |
Base current peak value |
|
- |
5 |
A |
-IB(AV) |
Reverse base current |
average over any 20 ms period |
- |
100 |
mA |
-I |
Reverse base current peak value 1 |
|
- |
4 |
A |
BM |
|
Ths ≤ 25 ˚C |
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Ptot |
Total power dissipation |
- |
45 |
W |
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Tstg |
Storage temperature |
|
-55 |
150 |
˚C |
Tj |
Junction temperature |
|
- |
150 |
˚C |
1 Turn-off current.
December 1995 |
1 |
Rev 2.000 |
Philips Semiconductors |
Preliminary specification |
|
|
Silicon Diffused Power Transistor |
BU2506DX |
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|
THERMAL RESISTANCES
SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
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Rth j-hs |
Junction to heatsink |
without heatsink compound |
- |
3.7 |
K/W |
Rth j-hs |
Junction to heatsink |
with heatsink compound |
- |
2.8 |
K/W |
Rth j-a |
Junction to ambient |
in free air |
32 |
- |
K/W |
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
Visol |
Repetitive peak voltage from all |
R.H. ≤ 65 % ; clean and dustfree |
- |
|
2500 |
V |
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three terminals to external |
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heatsink |
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Cisol |
Capacitance from T2 to external |
f = 1 MHz |
- |
22 |
- |
pF |
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heatsink |
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STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
TYP. |
MAX. |
UNIT |
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I |
Collector cut-off current 2 |
V = |
0 V; V |
CE |
= V |
CESMmax |
- |
- |
1.0 |
mA |
CES |
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BE |
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ICES |
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VBE = |
0 V; VCE = VCESMmax; |
- |
- |
2.0 |
mA |
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IEBO |
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Tj = 125 ˚C |
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Emitter cut-off current |
VEB = |
7.5 V; IC = 0 A |
90 |
- |
180 |
mA |
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BVEBO |
Emitter-base breakdown voltage |
IB = 600 mA |
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7.5 |
13.5 |
- |
V |
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Rbe |
Base-emitter resistance |
VEB = |
7.5 V |
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40 |
60 |
80 |
Ω |
VCEOsust |
Collector-emitter sustaining voltage |
IB = 0 A; IC = 100 mA; |
700 |
- |
- |
V |
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L = 25 mH |
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VCEsat |
Collector-emitter saturation voltage |
IC = 3.0 A; IB = 1.0 A |
- |
- |
1.0 |
V |
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VBEsat |
Base-emitter saturation voltage |
IC = 3.0 A; IB = 1.1 |
A |
- |
- |
1.3 |
V |
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hFE |
DC current gain |
IC = 0.3 A; VCE = 5 |
V |
7 |
12 |
19 |
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hFE |
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IC = 3.0 A; VCE = 5 |
V |
3.8 |
5.5 |
7.5 |
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VF |
Diode forward voltage |
IF = 3.0 A |
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- |
1.6 |
2.0 |
V |
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DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
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Cc |
Collector capacitance |
IE = 0 A; VCB = 10 V; f = 1 MHz |
47 |
- |
pF |
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Switching times (line deflection |
ICM = 3.0 A; LC = 1.35 mH; |
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circuit) |
CFB = 9.4 nF; IB(end) = 0.67 A; |
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LB = 8 μH; -VBB = 4 V; |
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ts |
Turn-off storage time |
(-dIB/dt = 0.45 A/μs) |
4.5 |
6.0 |
μs |
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tf |
Turn-off fall time |
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0.25 |
0.5 |
μs |
2 Measured with half sine-wave voltage (curve tracer).
December 1995 |
2 |
Rev 2.000 |
Philips Semiconductors |
Preliminary specification |
|
|
Silicon Diffused Power Transistor |
BU2506DX |
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ICM |
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TRANSISTOR |
IC |
DIODE |
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t |
IB |
IBend |
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t |
20us |
26us |
64us
VCE
t
Fig.1. Switching times waveforms.
h FE
100 |
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Tj = 25 C |
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Tj = 125 C |
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5V |
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10 |
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1V |
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1 |
0.1 |
1 |
10 |
0.01 |
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IC / A |
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Fig.4. Typical DC current gain. hFE = f (IC) parameter VCE
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ICM |
1.2 |
VBESAT / V |
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90 % |
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1.1 |
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Tj = 25 C |
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IC |
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1 |
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Tj = 125 C |
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0.9 |
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10 % |
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tf |
t |
0.8 |
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IC/IB = |
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ts |
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3 |
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IB |
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0.7 |
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4 |
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IBend |
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0.6 |
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5 |
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t |
0.5 |
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0.4 |
0.1 |
1 |
IC / A |
10 |
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- IBM |
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Fig.2. |
Switching times definitions. |
Fig.5. |
Typical base-emitter saturation voltage. |
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VBEsat = f (IC); parameter IC/IB |
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+ 150 v nominal |
1 |
VCESAT / V |
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adjust for ICM |
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0.9 |
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IC/IB = |
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5 |
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0.8 |
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4 |
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Lc |
0.7 |
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3 |
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0.6 |
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0.5 |
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Tj = 25 C |
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D.U.T. |
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0.4 |
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Tj = 125 C |
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IBend |
LB |
Cfb |
0.3 |
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0.2 |
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-VBB |
Rbe |
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0.1 |
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0 |
0.1 |
1 |
IC / A |
10 |
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Fig.3. |
Switching times test circuit. |
Fig.6. |
Typical collector-emitter saturation voltage. |
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VCEsat = f (IC); parameter IC/IB |
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December 1995 |
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|
3 |
|
|
|
Rev 2.000 |
Philips Semiconductors |
Preliminary specification |
|
|
Silicon Diffused Power Transistor |
BU2506DX |
|
|
VBESAT / V |
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1.2 |
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Tj = 25 C |
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1.1 |
Tj = 125 C |
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1 |
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0.9 |
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IC = |
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0.8 |
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4A |
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3A |
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0.7 |
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2.5A |
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0.6 |
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0 |
1 |
2 |
3 |
IB / A |
4 |
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Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC
VCESAT / V |
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10 |
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IC = 2.5A |
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Tj = 25 C |
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3A |
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Tj = 125 C |
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4A |
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1 |
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0.1 |
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0.1 |
1 |
IB / A |
10 |
Fig.8. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC
Eoff / uJ
1000
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IC = 3A |
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100 |
2.5A |
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10 |
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0.1 |
1 |
IB / A |
10 |
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Fig.9. Typical turn-off losses. Tj = 85˚C Eoff = f (IB); parameter IC
ts, tf / us
10
9 |
ts |
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8
7
6
5
4
IC =
3 |
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3A |
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2 |
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2.5A |
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1 |
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tf |
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0 |
0.1 |
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1 |
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10 |
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IB / A |
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Fig.10. Typical collector storage and fall time. |
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ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C |
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120 |
PD% |
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Normalised Power Derating |
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with heatsink compound |
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110 |
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100 |
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90 |
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80 |
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70 |
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60 |
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50 |
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40 |
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30 |
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20 |
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10 |
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0 |
0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
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Ths / C |
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Fig.11. |
Normalised power dissipation. |
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PD% = 100×PD/PD 25˚C = f (Ths) |
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December 1995 |
4 |
Rev 2.000 |
Philips Semiconductors |
Preliminary specification |
|
|
Silicon Diffused Power Transistor |
BU2506DX |
|
|
IC / A |
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100 |
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= 0.01 |
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ICM max |
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10 |
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tp = |
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IC max |
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10 us |
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II |
1 |
Ptot max |
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100 us |
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1 ms |
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I |
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0.1 |
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10 ms |
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DC |
0.01 |
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1 |
10 |
100 |
1000 |
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VCE / V |
Fig.12. Forward bias safe operating area. Ths = 25˚C I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and 30 ± 5 newton force on the centre of the envelope.
IC / A |
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100 |
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= 0.01 |
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ICM max |
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tp = |
10 |
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IC max |
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10 us |
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II |
1 |
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Ptot max |
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100 us |
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1 ms |
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I |
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0.1 |
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10 ms |
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DC |
0.01 |
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1 |
10 |
100 |
1000 |
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VCE / V |
Fig.13. Forward bias safe operating area. Ths = 25˚C I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted without heatsink compound and 30 ± 5 newton force on the centre of
the envelope.
December 1995 |
5 |
Rev 2.000 |
Philips Semiconductors |
Preliminary specification |
|
|
Silicon Diffused Power Transistor |
BU2506DX |
|
|
MECHANICAL DATA
Dimensions in mm |
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|
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5.8 max |
Net Mass: 5.88 g |
16.0 max |
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3.0 |
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0.7 |
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4.5 |
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10.0 |
3.3 |
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27 |
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25 |
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max |
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25.1 |
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22.5 |
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25.7 |
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max |
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4.7 |
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max |
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2.2 max |
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18.1 |
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4.5 |
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min |
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1.1 |
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0.4 M |
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2 |
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5.45 |
5.45 |
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0.9 max |
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3.3 |
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Fig.14. SOT399; The seating plane is electrically isolated from all terminals. |
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Notes
1.Refer to mounting instructions for F-pack envelopes.
2.Epoxy meets UL94 V0 at 1/8".
December 1995 |
6 |
Rev 2.000 |
Philips Semiconductors |
Preliminary specification |
|
|
Silicon Diffused Power Transistor |
BU2506DX |
|
|
DEFINITIONS
Data sheet status
Objective specification |
This data sheet contains target or goal specifications for product development. |
|
|
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification |
This data sheet contains final product specifications. |
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1995
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
December 1995 |
7 |
Rev 2.000 |