Philips Semiconductors |
Product specification |
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Silicon Diffused Power Transistor |
BUW14 |
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GENERAL DESCRIPTION
High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications.
QUICK REFERENCE DATA
SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
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VCESM |
Collector-emitter voltage peak value |
VBE = 0 V |
- |
1000 |
V |
VCEO |
Collector-emitter voltage (open base) |
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450 |
V |
IC |
Collector current (DC) |
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- |
0.5 |
A |
ICM |
Collector current peak value |
Tmb ≤ 60 ˚C |
- |
1 |
A |
Ptot |
Total power dissipation |
- |
20 |
W |
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tf |
Fall time |
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0.4 |
- |
μs |
PINNING - SOT82 |
PIN CONFIGURATION |
SYMBOL |
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PIN |
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DESCRIPTION |
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1 |
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emitter |
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2 |
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collector |
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b |
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3 |
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base |
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e |
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LIMITING VALUES |
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Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) |
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SYMBOL |
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PARAMETER |
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CONDITIONS |
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MIN. |
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MAX. |
UNIT |
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VCESM |
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Collector-emitter voltage peak value |
VBE = 0 V |
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- |
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1000 |
V |
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VCEO |
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Collector-emitter voltage (open base) |
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- |
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450 |
V |
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IC |
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Collector current (DC) |
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0.5 |
A |
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ICM |
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Collector current peak value |
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1 |
A |
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IB |
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Base current (DC) |
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0.2 |
A |
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IBM |
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Base current peak value |
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0.3 |
A |
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-I |
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Reverse base current peak value 1 |
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0.3 |
A |
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BM |
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Tmb ≤ 60 ˚C |
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Ptot |
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Total power dissipation |
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20 |
W |
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Tstg |
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Storage temperature |
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-65 |
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150 |
˚C |
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Tj |
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Junction temperature |
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150 |
˚C |
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THERMAL RESISTANCES |
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SYMBOL |
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PARAMETER |
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CONDITIONS |
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TYP. |
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MAX. |
UNIT |
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Rth j-mb |
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Junction to mounting base |
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- |
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- |
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4.5 |
K/W |
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Rth j-a |
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Junction to ambient |
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in free air |
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100 |
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- |
K/W |
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1 Turn-off current.
March 1992 |
1 |
Rev 1.000 |
Philips Semiconductors |
Product specification |
|
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Silicon Diffused Power Transistor |
BUW14 |
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STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
TYP. |
MAX. |
UNIT |
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I |
Collector cut-off current 2 |
V = |
0 |
V; V |
CE |
= V |
CESMmax |
- |
- |
100 |
μA |
CES |
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BE |
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ICES |
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VBE = |
0 |
V; VCE = VCESMmax; |
- |
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1.0 |
mA |
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Tj = 125 ˚C |
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IEBO |
Emitter cut-off current |
VEB = |
5 |
V; IC = 0 A |
- |
- |
1.0 |
mA |
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VCEOsust |
Collector-emitter sustaining voltage |
IB = 0 A; IC = 100 mA; |
450 |
- |
- |
V |
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L = 25 mH |
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VCEsat |
Collector-emitter saturation voltages |
IC = 0.1 A; IB = 10 mA |
- |
- |
0.8 |
V |
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VCEsat |
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IC = 0.2 A; IB = 20 mA |
- |
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1.0 |
V |
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VBEsat |
Base-emitter saturation voltage |
IC = 0.2 A; IB = 20 mA |
- |
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1.0 |
V |
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hFE |
DC current gain |
IC = 50 mA; VCE = 5 V |
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50 |
- |
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hFE |
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IC = 300 mA; VCE = 5 V |
25 |
50 |
100 |
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DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
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fT |
Transition frequency |
IC = 0.2 A; VCE = 10 V; f = 1 MHz |
20 |
- |
MHz |
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Switching times (resistive load circuit) |
ICon = 0.2 A; IBon = 20 mA; |
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ton |
Turn-on time |
-IBoff = 40 mA; VCC = 250 V |
0.4 |
0.7 |
μs |
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ts |
Turn-off storage time |
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3.5 |
5.0 |
μs |
tf |
Turn-off fall time |
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0.4 |
- |
μs |
tf |
Turn-off fall time |
Tmb = 95 ˚C |
- |
1.3 |
μs |
+ 50v 100-200R
Horizontal
Oscilloscope
Vertical
300R |
1R |
6V
30-60 Hz
Fig.1. Test circuit for VCEOsust.
IC / mA
250 
200 
100 
0
VCE / V |
min |
VCEOsust
Fig.2. Oscilloscope display for VCEOsust.
2 Measured with half sine-wave voltage (curve tracer).
March 1992 |
2 |
Rev 1.000 |
Philips Semiconductors |
Product specification |
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Silicon Diffused Power Transistor |
BUW14 |
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VCC |
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RL |
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VIM |
RB |
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0 |
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T.U.T. |
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tp |
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T |
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Fig.3. |
Test circuit resistive load. VIM = -6 to +8 V |
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VCC = 150 V; tp = 20 ms; d = tp / T = 0.01. |
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RB and RL calculated from ICon and IBon requirements. |
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90 % |
ICon |
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90 % |
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IC |
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10 % |
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ts |
ton |
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tf |
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toff |
IB |
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IBon |
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10 % |
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tr |
30ns |
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-IBoff |
Fig.4. Switching times waveforms with resistive load.
120 |
PD% |
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Normalised Power Derating |
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110 |
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100 |
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90 |
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80 |
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70 |
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60 |
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50 |
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40 |
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30 |
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20 |
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10 |
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0 |
0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
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Tmb / |
C |
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Fig.5. |
Normalised power dissipation. |
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PD% = 100×PD/PD 25˚C = f (Tmb) |
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hFE |
BUW14 |
1000 |
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100 |
5V |
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1V |
10 |
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Tj = 25 C |
Tj = 125 C
1 |
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0.01 |
0.1 |
1 |
IC / A
Fig.6. Typical DC current gain. hFE = f(IC) parameter VCE
VCESAT / V |
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BUW14 |
10 |
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Tj = 25 C |
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0.2 A |
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Tj = 125 C |
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1 |
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0.1 A |
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0.1 |
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IC=0.05 A |
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0.01 |
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1.0 |
0.001 |
0.01 |
0.1 |
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IB / A |
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Fig.7. Typical collector-emitter saturation voltage. VCEsat = f(IB); parameter IC
VBESAT / V |
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BUW14 |
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1 |
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Tj = 25 C |
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0.9 |
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Tj = 125 C |
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0.8 |
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0.7 |
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0.6 |
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IC= |
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0.5 |
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50 mA |
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100 mA |
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200 mA |
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0.4 |
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0 |
0.04 |
0.08 |
0.12 |
0.16 |
0.2 |
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IB / A |
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Fig.8. Typical base-emitter saturation voltage. VBEsat = f(IB); parameter IC
March 1992 |
3 |
Rev 1.000 |
Philips Semiconductors |
Product specification |
|
|
Silicon Diffused Power Transistor |
BUW14 |
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Fig.9. Forward bias safe operating area.
(1)Ptot max line.
(2)Second-breakdown limits.
I Region of permissible DC operation.
IIPermissible extension for repetitive pulse operation.
IIIArea of permissible operation during turn-on in single transistor converters, provided
≤100 Ω and tp ≤ 0.6 μs.RBE
IV Repetitive pulse operation in this region is permissible provided VBE ≤ 0 and tp ≤ 2 ms.
Fig.10. Transient thermal impedance.
Zth j-mb = f(t); parameter δ = duty cycle.
March 1992 |
4 |
Rev 1.000 |
Philips Semiconductors |
Product specification |
|
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Silicon Diffused Power Transistor |
BUW14 |
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MECHANICAL DATA
Dimensions in mm
Net Mass: 0.8 g
mounting |
2.8 |
7.8 |
base |
2.3 |
max |
3.1 |
3.75 |
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2.5 |
11.1 |
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max |
1)
2.54
max
1.2
15.3 min
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2 |
3 |
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0.5 |
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4.58 |
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2.29 |
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0.88 |
1) Lead dimensions within this |
max |
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zone uncontrolled. |
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Fig.11. SOT82; pin 2 connected to mounting base.
Notes
1.Refer to mounting instructions for SOT82 envelopes.
2.Epoxy meets UL94 V0 at 1/8".
March 1992 |
5 |
Rev 1.000 |
Philips Semiconductors |
Product specification |
|
|
Silicon Diffused Power Transistor |
BUW14 |
|
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DEFINITIONS
Data sheet status
Objective specification |
This data sheet contains target or goal specifications for product development. |
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Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification |
This data sheet contains final product specifications. |
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1995
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
March 1992 |
6 |
Rev 1.000 |