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Philips Semiconductors	Product specification

Silicon Diffused Power Transistor	BU2708DF

GENERAL DESCRIPTION

High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a low worst case dissipation. Designed to withstand VCES pulses up to 1700V.

QUICK REFERENCE DATA

SYMBOL	PARAMETER	CONDITIONS	TYP.	MAX.	UNIT

VCESM	Collector-emitter voltage peak value	VBE = 0 V	-	1700	V
VCEO	Collector-emitter voltage (open base)		-	825	V
IC	Collector current (DC)		-	8	A
ICM	Collector current peak value	Ths ≤ 25 ˚C	-	15	A
Ptot	Total power dissipation	Ths ≤ 25 ˚C	-	45	W
VCEsat	Collector-emitter saturation voltage	IC = 4 A; IB = 1.33 A	-	1.0	V
ICsat	Collector saturation current	IF = 4.0 A	4.0	-	A
VF	Diode forward voltage	IF = 4.0 A	1.6	-	V
ts	Storage time	ICM = 4 A; IB(end) = 0.8 A	4.8	5.5	μs

PINNING - SOT199

PIN CONFIGURATION

SYMBOL

DESCRIPTION

case

base

collector

emitter

Rbe

case

isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCESM

Collector-emitter voltage peak value

VBE = 0 V

1700

VCEO

Collector-emitter voltage (open base)

825

Collector current (DC)

ICM

Collector current peak value

Base current (DC)

IBM

Base current peak value

-I

Reverse base current peak value 1

Ths ≤ 25 ˚C

Ptot

Total power dissipation

Tstg

Storage temperature

-65

150

˚C

Junction temperature

150

˚C

ESD LIMITING VALUES

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Electrostatic discharge capacitor voltage

Human body model (250 pF,

1.5 kΩ)

1 Turn-off current.

November 1995

Rev 1.100

Philips Semiconductors	Product specification

Silicon Diffused Power Transistor	BU2708DF

THERMAL RESISTANCES

SYMBOL	PARAMETER	CONDITIONS	TYP.	MAX.	UNIT

Rth j-hs	Junction to heatsink	without heatsink compound	-	3.7	K/W
Rth j-hs	Junction to heatsink	with heatsink compound	-	2.8	K/W
Rth j-a	Junction to ambient	in free air	35	-	K/W

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT

Visol	Repetitive peak voltage from all	R.H. ≤ 65 % ; clean and dustfree	-		2500	V
	three terminals to external
	heatsink
Cisol	Capacitance from T2 to external	f = 1 MHz	-	22	-	pF
	heatsink

STATIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS					MIN.	TYP.	MAX.	UNIT

I	Collector cut-off current 2	V =	0 V; V	CE	= V	CESMmax	-	-	1.0	mA
CES		BE		CE		CESMmax
ICES		VBE =	0 V; VCE = VCESMmax;				-	-	2.0	mA
		Tj = 125 ˚C
IEBO	Emitter cut-off current	VEB =	7.5 V; IC = 0 A				132	-	268	mA
BVEBO	Emitter-base breakdown voltage	IB = 600 mA					7.5	13.5	-	V
RBE	Base-emitter resistance	VEB =	7.5 V					45		Ω
VCEsat	Collector-emitter saturation voltage	IC = 4 A; IB = 1.33 A					-	-	1.0	V
VBEsat	Base-emitter saturation voltage	IC = 4 A; IB = 1.33 A					0.83	0.91	1.00	V
VF	Diode forward voltage	IF = 4	A					1.6		V
hFE	DC current gain	IC = 1 A; VCE = 5 V					9.5	15	21
hFE		IC = 4 A; VCE = 1 V					3	6	7.3

DYNAMIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS		TYP.	MAX.	UNIT

	Switching times (line deflection	ICM = 4 A; LC = 1 mH; CFB = 12.2 nF;
	circuit 16 kHz)	VCC = 120 V; IB(end) = 0.8 A; LB = 6	μH;
ts	Turn-off storage time	-VBB = 4 V; -IBM = ICM/2		4.8	5.5	μs
ts	Turn-off storage time			4.8	5.5	μs
tf	Turn-off fall time			0.4	0.52	μs

2 Measured with half sine-wave voltage (curve tracer).

November 1995

Rev 1.100

Philips Semiconductors	Product specification

Silicon Diffused Power Transistor	BU2708DF

	ICM
	TRANSISTOR
IC	DIODE
	t

IB	IBend
	t
20us	26us

64us

VCE

Fig.1. Switching times waveforms.

+ 150 v nominal adjust for ICM

	Lc
	D.U.T.
IBend	LB
	Cfb
-VBB	Rbe

Fig.3. Switching times test circuit.

		ICM
		90 %
	IC
		10 %
	tf	t
	ts	t
	ts
	IB
	IBend
		t

- IBM

Fig.2. Switching times definitions.

hFE				BU2708DF
100
VCE = 5 V			Ths = 25 C
			Ths = 25 C
			Ths = 85 C
10
1
0.01	0.1	1	10	IC / A	100

Fig.4. DC current gain. hFE = f (IC) Parameter Ths

(Low and high gain)

November 1995

Rev 1.100

Philips Semiconductors	Product specification

Silicon Diffused Power Transistor	BU2708DF

hFE				BU2708DF
100
VCE = 1 V			Ths = 25 C
			Ths = 25 C
			Ths = 85 C
10
1
0.01	0.1	1	10	IC / A	100

Fig.5. DC current gain. hFE = f (IC) Parameter Ths

(Low and high gain)

VCEsat / V			BU2708DF
10
	Tj = 85 C
	Tj = 25 C
1
	IC/IB = 8
		IC/IB = 4
0.1
0.01	1	10	100
0.1	1	10	100
			IC / A

Fig.6. Typical collector-emitter saturation voltage.
	VCEsat = f (IC); parameter IC/IB
	VBEsat / V				BU2708DF
1.2
		Tj = 85 C
1.1		Tj = 25 C
				IC = 4A
1
0.9
0.8
				3A
0.7
0.6	0	0.5	1	1.5	2
					IB / A

Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC

10	PTOT / W				BU2708AF/DF
10
			IC = 3.5 A
			f = 16 kHz
			Tj = 85 C
1	0	0.5	1	1.5	2
					IB / A

Fig.8. Limit Ptot; Tj = 85˚C

Ptot = f (IB(end)); IC = 3.5 A; f = 16 kHz

PTOT / W

BU2708AF/DF

10 IC = 4 A

f = 16 kHz Tj = 85 C

1	0	0.5	1	1.5	2
				IB / A
		Fig.9.	Limit Ptot;	Tj = 85˚C
		Ptot = f (IB(end)); IC = 4.0 A; f = 16 kHz
10	ts/tf / us			BU2708AF/DF
10
8
6
4			IC = 4A	IC = 3.5A
2
0	0	0.5	1	1.5	2
				IB / A

Fig.10. Limit storage and fall time.

ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz

November 1995

Rev 1.100

Philips Semiconductors	Product specification

Silicon Diffused Power Transistor												BU2708DF
120	PD%				Normalised Power Derating						VCC
120						with heatsink compound
110						with heatsink compound
110
100
90
80											LC
70											LC
70
60
50									IBend				VCL
40									IBend		LB
40											LB
30													CFB
20											T.U.T.		CFB
20									-VBB		T.U.T.
10
0
0		20	40	60	80	100	120	140
					Ths / C				Fig.13. Test Circuit RBSOA. VCC = 150 V;
Fig.11. Normalised power dissipation.									Fig.13. Test Circuit RBSOA. VCC = 150 V;
Fig.11. Normalised power dissipation.											-VBB = 1 - 4 V;
		PD% = 100×PD/PD 25˚C = f (Ths)							LC = 1 mH; VCL = 1500 V; LB = 1 - 3 mH;
											CFB = 1 - 4 nF; IB(end) = 0.8 - 4 A
10	Zth / K/W						BU2708AF/DF		IC / A				BU2708AF/DF
10									16
									16
		0.5							14
1		0.5							12				Area where
1													Area where
		0.2											Fails occur
		0.2											Fails occur
		0.1							10
0.1		0.05							8
0.1		0.02


									6
0.01					P	tp	D =	tp	4
0.01					D		D =	T	4
		D = 0				T		t	2
								t
0.001
0.001		1.0E-06		1E-04		1E-02	1E+00		0
		1.0E-06		1E-04		1E-02	1E+00		0			1000	1700
					tp / sec				100		VCE / V	1000	1700
					tp / sec						VCE / V
Fig.12. Transient thermal impedance.									Fig.14.	Reverse bias safe operating area. Tj £ Tjmax
		Zth j-hs = f(t); parameter D = tp/T

November 1995

Rev 1.100

Philips Semiconductors	Product specification

Silicon Diffused Power Transistor	BU2708DF

MECHANICAL DATA

Dimensions in mm

Net Mass: 5.5 g

		15.3 max	5.2 max
			5.2 max
0.7		3.1
0.7	7.3	3.3	3.2
		3.3	3.2

			o
		6.2	45
		5.8

21.5

max

seating

plane

	3.5	3.5 max
	3.5	not tinned
		not tinned

15.7 min

1	2	3
2.1 max		1.2		0.7 max
		1.0	M
		0.4	M	2.0
				2.0
	5.45	5.45

Fig.15. SOT199; The seating plane is electrically isolated from all terminals.

Notes

1.Refer to mounting instructions for F-pack envelopes.

2.Epoxy meets UL94 V0 at 1/8".

November 1995

Rev 1.100

Philips Semiconductors	Product specification

Silicon Diffused Power Transistor	BU2708DF

DEFINITIONS

Data sheet status

Objective specification	This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

November 1995

Rev 1.100

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