Philips Semiconductors |
Product specification |
|
|
Silicon Diffused Power Transistor |
BUT211 |
|
|
|
|
GENERAL DESCRIPTION
Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA
SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
|
|
|
|
|
|
VCESM |
Collector-emitter voltage peak value |
VBE = 0 V |
- |
850 |
V |
VCEO |
Collector-emitter voltage (open base) |
|
- |
400 |
V |
IC |
Collector current (DC) |
|
- |
5 |
A |
ICM |
Collector current peak value |
Tmb ≤ 25 ˚C |
- |
10 |
A |
Ptot |
Total power dissipation |
- |
100 |
W |
|
VCEsat |
Collector-emitter saturation voltage |
IC = 3.0 A; IB = 0.3 A |
- |
2.0 |
V |
tf |
Inductive fall time |
ICon = 3.0 A; IBon = 0.3 A |
- |
0.1 |
μs |
PINNING - TO220AB |
PIN CONFIGURATION |
SYMBOL |
|
|
|
|
||||||||||||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||||||||
|
PIN |
|
|
|
|
DESCRIPTION |
|
|
|
|
tab |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
c |
|
||
|
|
|
|
|
|
|
|
|
|
|||||||||||||||||||||
|
|
|
|
|
|
|
|
|
|
|||||||||||||||||||||
1 |
|
|
base |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||
2 |
|
|
collector |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
b |
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||||
3 |
|
|
emitter |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||||||
|
tab |
|
collector |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
|
1 |
|
2 |
|
3 |
|
|
|
|
|
|
e |
|
|||||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
LIMITING VALUES |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) |
|
|
|
|
||||||||||||||||||||||||||
|
SYMBOL |
|
PARAMETER |
|
|
|
|
CONDITIONS |
|
MIN. |
|
MAX. |
UNIT |
|||||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||||
|
VCESM |
|
|
Collector-emitter voltage peak value |
|
|
|
VBE = 0 V |
|
- |
|
850 |
V |
|||||||||||||||||
|
VCEO |
|
|
Collector-emitter voltage (open base) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
- |
|
400 |
V |
|||||||
|
IC |
|
|
Collector current (DC) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
- |
|
5 |
A |
||||||
|
ICM |
|
|
Collector current peak value |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
- |
|
10 |
A |
|||||||
|
IB |
|
|
Base current (DC) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
- |
|
2 |
A |
||||||
|
IBM |
|
|
Base current peak value |
|
|
|
|
Tmb ≤ 25 ˚C |
|
- |
|
4 |
A |
||||||||||||||||
|
Ptot |
|
|
Total power dissipation |
|
|
|
|
|
- |
|
100 |
W |
|||||||||||||||||
|
Tstg |
|
|
Storage temperature |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
-65 |
|
150 |
˚C |
||||||
|
Tj |
|
|
Junction temperature |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
- |
|
150 |
˚C |
||||||
THERMAL RESISTANCES |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||||||||
|
SYMBOL |
|
PARAMETER |
|
|
|
|
CONDITIONS |
|
TYP. |
|
MAX. |
UNIT |
|||||||||||||||||
|
Rth j-mb |
|
|
Junction to mounting base |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
- |
|
1.25 |
K/W |
||||||
|
Rth j-a |
|
|
Junction to ambient |
|
|
|
|
in free air |
|
- |
|
60 |
K/W |
||||||||||||||||
May 1992 |
1 |
Rev 1.000 |
Philips Semiconductors |
Product specification |
|
|
Silicon Diffused Power Transistor |
BUT211 |
|
|
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
|
|
MIN. |
TYP. |
MAX. |
UNIT |
||
I |
Collector cut-off current 1 |
V = |
0 V; V |
CE |
= V |
CESMmax |
- |
- |
1.0 |
mA |
CES |
|
BE |
|
|
|
|
|
|
||
ICES |
|
VBE = |
0 V; VCE = VCESMmax; |
- |
- |
2.0 |
mA |
|||
|
|
Tj = 125 ˚C |
|
|
|
|
|
|
|
|
IEBO |
Emitter cut-off current |
VEB = |
9.0 V; IC = 0 A |
- |
- |
10.0 |
mA |
|||
VCEOsust |
Collector-emitter sustaining voltage |
IB = 0 A; IC = 100 mA; |
400 |
- |
- |
V |
||||
|
|
L = 25 mH |
|
|
|
|
|
|
|
|
VCEsat |
Collector-emitter saturation voltage |
IC = 3.0 A; IB = 0.3 A |
- |
0.8 |
2.0 |
V |
||||
VBEsat |
Base-emitter saturation voltage |
IC = 4.0 A; IB = 0.6 A |
- |
- |
1.3 |
V |
||||
hFE |
DC current gain |
IC = 1.0 A; VCE = 2 |
V |
13 |
23 |
30 |
|
|||
hFE |
|
IC = 4.0 A; VCE = 2 |
V |
6 |
10.5 |
- |
|
|||
hFE |
|
IC = 3.0 A; VCE = 2 |
V |
10 |
13 |
- |
|
|||
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
|
|
|
|
|
|
|
|
ts |
Switching times resistive load |
ICon = 3.0 |
A; IBon = 0.3 A; -IBoff = 0.6 A |
1.5 |
2.0 |
μs |
Turn-off storage time |
|
|
||||
tf |
Turn-off fall time |
|
|
0.5 |
0.8 |
μs |
|
Switching times inductive load |
ICon = 3.0 |
A; IBon = 0.3 A; LB = 1 μH; |
|
|
|
ts |
Turn-off storage time |
-VBB = 5 V |
1.0 |
1.2 |
μs |
|
|
|
|||||
tf |
Turn-off fall time |
ICon = 3.0 |
A; IBon = 0.3 A; LB = 1 μH; |
60 |
100 |
ns |
|
|
|
|
|
||
ts |
Turn-off storage time |
-VBB = 5 V; Tj = 100 ˚C |
1.1 |
1.4 |
μs |
|
|
|
|||||
tf |
Turn-off fall time |
|
|
120 |
250 |
ns |
+ 50v 100-200R
|
Horizontal |
|
Oscilloscope |
|
Vertical |
300R |
1R |
6V
30-60 Hz
Fig.1. Test circuit for VCEOsust.
IC / mA
250 
200 
100 
0
VCE / V |
min |
VCEOsust
Fig.2. Oscilloscope display for VCEOsust.
1 Measured with half sine-wave voltage (curve tracer).
May 1992 |
2 |
Rev 1.000 |
Philips Semiconductors |
Product specification |
|
|
Silicon Diffused Power Transistor |
BUT211 |
|
|
|
|
VCC |
|
|
|
RL |
|
VIM |
RB |
|
|
0 |
T.U.T. |
||
|
|||
tp |
|
|
|
T |
|
|
|
Fig.3. Test circuit resistive load. VIM = -6 to +8 V |
|||
VCC = 250 V; tp = 20 ms; d = tp / T = 0.01. |
|||
RB and RL calculated from ICon and IBon requirements. |
|||
|
90 % |
ICon |
|
|
90 % |
||
IC |
|
|
|
|
|
10 % |
|
|
|
ts |
|
ton |
|
tf |
|
|
|
toff |
|
IB |
|
IBon |
|
|
|
||
10 % |
|
||
tr |
30ns |
|
|
|
-IBoff |
|
|
Fig.4. Switching times waveforms with resistive load. |
|||
|
|
VCC |
|
|
|
LC |
|
IBon |
LB |
|
|
|
|
||
|
|
T.U.T. |
|
-VBB
Fig.5. Test circuit inductive load.
VCC = 300 V; -VBE = 5 V;LB = 1 uH
|
|
|
ICon |
|
|
|
90 % |
IC |
|
|
|
|
|
|
10 % |
|
ts |
tf |
t |
|
toff |
|
|
IB |
IBon |
|
|
|
|
|
t |
-IBoff
Fig.6. Switching times waveforms with inductive load.
120 |
PD% |
|
|
Normalised Power Derating |
||||
|
|
|
|
|
|
|
|
|
110 |
|
|
|
|
|
|
|
|
100 |
|
|
|
|
|
|
|
|
90 |
|
|
|
|
|
|
|
|
80 |
|
|
|
|
|
|
|
|
70 |
|
|
|
|
|
|
|
|
60 |
|
|
|
|
|
|
|
|
50 |
|
|
|
|
|
|
|
|
40 |
|
|
|
|
|
|
|
|
30 |
|
|
|
|
|
|
|
|
20 |
|
|
|
|
|
|
|
|
10 |
|
|
|
|
|
|
|
|
0 |
0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
|
||||||||
|
|
|
|
|
Tmb / |
C |
|
|
|
Fig.7. |
Normalised power dissipation. |
||||||
|
|
PD% = 100×PD/PD 25˚C = f (Tmb) |
|
|||||
10 |
Zth / (K/W) |
|
|
|
|
|
|
|
|
|
|
|
|
1 |
D= 0.5 |
|
|
|
|
|
|
|
|
|
|
|
|
|
0.2 |
|
|
|
|
|
|
0.1 |
|
|
|
|
|
0.1 |
0.05 |
|
P |
tp |
|
tp |
|
|
D = T |
||||
|
0.02 |
|
D |
|
|
|
|
0 |
|
|
|
|
|
|
|
|
|
|
T |
t |
|
|
|
|
|
|
|
0.01 |
|
|
|
|
|
|
1E-06 |
1E-04 |
1E-02 |
|
|
1E+00 |
|
|
|
|
t / s |
|
|
|
Fig.8. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
May 1992 |
3 |
Rev 1.000 |
Philips Semiconductors |
Product specification |
|
|
Silicon Diffused Power Transistor |
BUT211 |
|
|
VBEsat / V |
|
|
1.2 |
|
|
1.1 |
Tj = 25 C |
|
Tj = 125 C |
|
|
|
|
|
1 |
|
|
0.9 |
|
|
0.8 |
|
|
0.7 |
|
IC/IB= |
|
|
|
0.6 |
|
8 |
|
10 |
|
|
|
|
0.5 |
|
12 |
0.4 |
|
|
0.1 |
1 |
10 |
|
IC / A |
|
Fig.9. Typical base-emitter saturation voltage. |
||
|
VBEsat = f(IC); parameter IC/IB |
|
VCEsat / V |
|
|
1 |
|
|
0.9 |
|
|
0.8 |
IC/IB= |
|
0.7 |
12 |
|
10 |
|
|
|
|
|
0.6 |
8 |
|
0.5 |
|
|
0.4 |
Tj = 25 C |
|
0.3 |
|
|
Tj = 125 C |
|
|
|
|
|
0.2 |
|
|
0.1 |
|
|
0 |
|
|
0.1 |
1 |
10 |
|
IC / A |
|
Fig.10. Typical collector-emitter saturation voltage. |
||||||
|
VCEsat = f(IC); parameter IC/IB |
|
||||
VBEsat / V |
|
|
|
|
|
|
1.2 |
|
|
|
|
|
|
|
Tj = 25 C |
|
|
|
|
|
1.1 |
Tj = 125 C |
|
|
|
|
|
|
|
|
|
|
|
|
1 |
|
|
|
|
|
|
0.9 |
|
|
|
|
|
|
0.8 |
|
|
|
|
IC = |
|
|
|
|
|
5A |
|
|
|
|
|
|
|
|
|
0.7 |
|
|
|
|
3A |
|
|
|
|
|
2A |
|
|
|
|
|
|
|
|
|
0.6 |
|
|
|
|
|
|
0 |
0.4 |
0.8 |
1.2 |
1.6 |
2 |
2.4 |
|
|
|
IB / A |
|
|
|
VCEsat / V |
|
|
10 |
|
|
|
|
Tj = 25 C |
|
|
Tj = 125 C |
|
5A |
|
1 |
|
|
3A |
|
|
IC=2A |
|
|
0.1 |
|
|
0.1 |
1 |
10 |
|
IB / A |
|
Fig.12. Typical collector-emitter saturation voltage. VCEsat = f(IB); parameter IC
h FE
100 |
|
|
|
|
|
|
5V |
|
1V |
|
|
10 |
|
|
|
|
Tj = 25 C |
|
|
|
Tj = 125 C |
|
|
1 |
|
|
|
0.01 |
0.1 |
1 |
10 |
|
IC / A |
|
|
Fig.13. Typical DC current gain. hFE = f(IC) parameter VCE
Fig.11. Typical base-emitter saturation voltage. VBEsat = f(IB); parameter IC
May 1992 |
4 |
Rev 1.000 |
Philips Semiconductors |
Product specification |
|
|
Silicon Diffused Power Transistor |
BUT211 |
|
|
IC / A |
|
|
|
100 |
|
|
|
ICMmax |
|
= 0.01 |
tp = |
|
|
||
|
|
|
|
10 |
|
|
|
|
|
|
10 us |
ICmax |
|
|
100 us |
|
|
|
|
1 |
|
|
500 us |
|
|
II |
|
|
|
I |
2 ms |
0.1 |
|
|
|
|
|
10 ms |
|
|
|
|
|
|
|
|
DC |
0.01 |
|
|
|
1 |
10 |
100 |
1000 |
|
|
VCE / V |
|
Fig.14. Forward bias safe operating area. Tmb = 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation. NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of the envelope.
IC / A |
|
|
|
|
|
6 |
|
|
|
|
|
5 |
|
|
|
|
|
4 |
|
|
|
|
|
3 |
|
|
|
|
|
2 |
|
|
|
|
|
1 |
|
|
|
|
|
0 |
|
|
|
|
|
0 |
200 |
400 |
600 |
800 |
1000 |
|
|
VCE / V |
|
|
|
Fig.15. Reverse bias safe operating area. Tj ≤ Tj max
VCC
|
LC |
|
VCL |
IBon |
LB |
|
|
-VBB |
T.U.T. |
|
Fig.16. Test circuit RBSOAR. VCC = 150 V; -VBB = 5 V LC = 200 μH; VCL ≤ 850 V; LB = 1 μH
May 1992 |
5 |
Rev 1.000 |
Philips Semiconductors |
Product specification |
|
|
Silicon Diffused Power Transistor |
BUT211 |
|
|
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g |
4,5 |
|
max |
||
10,3 |
|
|
max |
1,3 |
|
3,7 |
||
|
||
2,8 |
5,9 |
|
|
min |
15,8 max
3,0 max |
3,0 |
|
not tinned |
||
|
|
|
13,5 |
|
|
|
min |
|
1,3 |
|
|
|
max |
1 2 3 |
|
|
(2x) |
|
0,9 max (3x) |
0,6 |
|
|
|
|
|
2,54 2,54 |
|
2,4 |
|
|
|
Fig.17. TO220AB; pin 2 connected to mounting base.
Notes
1.Refer to mounting instructions for TO220 envelopes.
2.Epoxy meets UL94 V0 at 1/8".
May 1992 |
6 |
Rev 1.000 |
Philips Semiconductors |
Product specification |
|
|
Silicon Diffused Power Transistor |
BUT211 |
|
|
DEFINITIONS
Data sheet status
Objective specification |
This data sheet contains target or goal specifications for product development. |
|
|
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification |
This data sheet contains final product specifications. |
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1995
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
May 1992 |
7 |
Rev 1.000 |