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DISCRETE SEMICONDUCTORS

ook, halfpage

M3D088

PMBD352; PMBD353

Schottky barrier double diodes

Product specification

1996 Mar 20

Supersedes data of January 1995

File under Discrete Semiconductors, SC01

Philips Semiconductors

Product specification

 

 

 

 

Schottky barrier double diodes

PMBD352; PMBD353

 

 

 

 

FEATURES

Low forward voltage

Small SMD package

Low capacitance.

APPLICATIONS

UHF mixer

Sampling circuits

Modulators

Phase detection.

DESCRIPTION

Planar Schottky barrier double diodes in series connection with different pinning.

The diodes are encapsulated in a SOT23 small plastic SMD package.

MARKING

TYPE

MARKING CODE

NUMBER

PMBD352 p5g

PMBD353 p4f

LIMITING VALUES

PINNING

PIN DESCRIPTION

PMBD352 (see Fig.2)

1

a1

2

k2

3

k1, a2

PMBD353 (see Fig.3)

1

k1

2

a2

3

a1, k2

handbook, 2 columns

3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

2

 

 

 

 

 

 

 

 

 

 

 

 

 

Top view

MGC421

Fig.1 Simplified outline (SOT23) and pin configuration.

3

fpage

1 2

MLC358

Fig.2 PMBD352 diode configuration (symbol).

handbook, 2 columns

3

1 2

MGC487

Fig.3 PMBD353 diode configuration (symbol).

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

MIN.

MAX.

UNIT

 

 

 

 

 

Per diode

 

 

 

 

 

 

 

 

 

VR

continuous reverse voltage

4

V

IF

continuous forward current

30

mA

Tstg

storage temperature

65

+150

°C

Tj

junction temperature

100

°C

1996 Mar 20

2

Philips Semiconductors

 

Product specification

 

 

 

 

 

Schottky barrier double diodes

PMBD352; PMBD353

 

 

 

 

 

ELECTRICAL CHARACTERISTICS

 

 

 

Tamb = 25 °C unless otherwise specified.

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

 

 

 

 

 

Per diode

 

 

 

 

 

 

 

 

 

VF

forward voltage

see Fig.4

 

 

 

 

IF = 0.1 mA

350

mV

 

 

IF = 1 mA

450

mV

 

 

IF = 10 mA

600

mV

IR

reverse current

VR = 3 V; note 1; see Fig.5

0.25

μA

Cd

diode capacitance

f = 1 MHz; VR = 0 V; see Fig.6

1

pF

Note

1. Pulsed test: tp = 300 μs; δ = 0.02.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

 

 

 

 

 

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

Note

 

 

 

 

1. Refer to SOT23 standard mounting conditions.

1996 Mar 20

3

Philips Semiconductors

Product specification

 

 

Schottky barrier double diodes

 

 

PMBD352; PMBD353

GRAPHICAL DATA

 

 

 

 

 

 

 

 

 

10

2

 

 

 

MLC795

10

4

 

 

MLC796

 

 

 

 

 

 

 

 

 

handbook, halfpage

 

 

 

 

handbook, halfpage

 

 

 

 

IF

 

 

 

 

 

IR

 

 

 

 

 

 

 

 

 

 

(nA)

 

 

 

 

 

(mA)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

103

 

(1)

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(1)

 

102

 

(2)

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

(2)

 

 

 

 

(3)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(3)

 

10

 

 

 

 

 

 

 

 

(4)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

1

 

 

 

 

 

1

 

(4)

 

 

 

 

 

 

 

 

 

 

 

 

 

10 2

200

400

600

800

10 1

1

2

 

3

 

0

 

0

VR(V)

 

 

 

 

 

VF (V)

 

 

 

 

 

(1) Tamb = 100 °C.

 

 

 

 

(1) Tamb = 100 °C.

 

 

 

 

(2) Tamb = 60 °C.

 

 

 

 

(2) Tamb = 60 °C.

 

 

 

 

(3) Tamb = 25 °C.

 

 

 

 

(3) Tamb = 25 °C.

 

 

 

 

(4) Tamb = 40 °C.

 

 

 

 

(4) Tamb = 40 °C.

 

 

 

 

Fig.4 Forward current as a function of forward

Fig.5 Reverse current as a function of reverse

voltage; typical values.

voltage; typical values.

0.8

 

 

 

 

 

MLC797

 

 

 

 

 

 

 

handbook, halfpage

 

 

 

 

 

 

 

C d

 

 

 

 

 

 

 

(pF)

 

 

 

 

 

 

 

0.7

 

 

 

 

 

 

 

0.6

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

0.4

 

 

 

 

 

 

 

0

1

2

3

V

R

(V)

4

 

 

 

 

 

 

 

f = 1 MHz; Tamb = 25 °C.

 

 

 

 

 

 

Fig.6 Diode capacitance as a function of reverse voltage; typical values.

1996 Mar 20

4

Philips Semiconductors

Product specification

 

 

Schottky barrier double diodes

PMBD352; PMBD353

 

 

PACKAGE OUTLINE

 

 

 

 

 

3.0

 

 

ok, full pagewidth

 

 

 

2.8

 

 

 

 

 

 

1.9

B

 

 

0.150

 

 

 

 

 

 

 

 

 

 

0.75

0.090

 

0.95

 

A

0.2 M A B

 

 

 

0.60

 

 

 

 

 

 

 

 

 

2

1

 

 

10o

0.1

 

 

 

 

 

max

 

 

 

1.4

2.5

max

 

 

 

 

 

 

 

1.2

max

 

10o

 

 

 

 

 

 

 

 

 

 

max

 

 

 

 

 

 

 

 

3

 

 

 

1.1

 

 

0

 

 

 

max

30o

0.48

 

0.1 M A B

MBC846

0.1

 

 

max

 

 

 

 

 

 

 

 

TOP VIEW

 

 

Dimensions in mm.

Fig.7 SOT23.

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

 

 

Preliminary specification

This data sheet contains preliminary data; supplementary data may be published later.

 

 

Product specification

This data sheet contains final product specifications.

 

 

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

1996 Mar 20

5

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