Добавил:
Опубликованный материал нарушает ваши авторские права? Сообщите нам.
Вуз: Предмет: Файл:

philips / SCHB_D / 9239

.PDF
Источник:
Скачиваний:
62
Добавлен:
06.01.2022
Размер:
67.02 Кб
Скачать

DISCRETE SEMICONDUCTORS

ok, halfpage

M3D088

BAS40 series

Schottky barrier (double) diodes

Product specification

1996 Mar 20

Supersedes data of October 1994

File under Discrete Semiconductors, SC01

Philips Semiconductors

Product specification

 

 

 

 

Schottky barrier (double) diodes

BAS40 series

 

 

 

 

FEATURES

Low forward voltage

Guard ring protected

Small SMD package

Low diode capacitance.

APPLICATIONS

Ultra high-speed switching

Voltage clamping

Protection circuits

Blocking diodes.

DESCRIPTION

Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available.

MARKING

TYPE NUMBER

MARKING

CODE

 

 

 

BAS40

43p

 

 

BAS40-04

44p

 

 

BAS40-05

45p

 

 

BAS40-06

46p

 

 

PINNING

PIN

 

 

 

BAS40

 

 

 

 

 

 

 

 

 

 

-04

 

-05

-06

 

 

 

 

 

 

 

 

 

 

 

 

1

a1

 

a1

 

a1

k1

2

n.c.

 

k2

 

a2

k2

3

k1

 

k1, a2

 

k1, k2

a1, a2

 

 

 

 

 

 

handbook, 2 columns

 

 

3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

2

 

 

 

 

 

 

 

 

 

 

 

 

 

Top view

MGC421

Fig.1 Simplified outline (SOT23) and pin configuration.

3

alfpage

1 2 n.c.

MLC357

Fig.2 BAS40 single diode configuration (symbol).

3

page

1 2

MLC358

Fig.3 BAS40-04 diode configuration (symbol).

3

fpage

1 2

MLC359

Fig.4 BAS40-05 diode configuration (symbol).

3

page

1 2

MLC360

Fig.5 BAS40-06 diode configuration (symbol).

1996 Mar 20

2

Philips Semiconductors

 

Product specification

 

 

 

 

 

 

 

 

Schottky barrier (double) diodes

 

BAS40 series

 

 

 

 

 

 

 

 

 

LIMITING VALUES

 

 

 

 

 

 

In accordance with the Absolute Maximum Rating System (IEC 134).

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

MIN.

 

MAX.

UNIT

 

 

 

 

 

 

 

 

 

Per diode

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VR

continuous reverse voltage

 

 

40

 

V

IF

continuous forward current

 

 

120

mA

IFRM

repetitive peak forward current

tp 1 s; δ ≤ 0.5

 

120

mA

IFSM

non-repetitive peak forward current

tp < 10 ms

 

200

mA

Tstg

storage temperature

 

65

 

+150

°C

Tj

junction temperature

 

 

150

°C

Tamb

operating ambient temperature

 

65

 

+150

°C

ELECTRICAL CHARACTERISTICS

 

 

 

 

 

 

Tamb = 25 °C unless otherwise specified.

 

 

 

 

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

MAX.

 

UNIT

 

 

 

 

 

 

 

 

 

Per diode

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VF

continuous forward voltage

see Fig.6

 

 

 

 

 

 

 

 

IF = 1 mA

380

 

 

mV

 

 

 

 

IF = 10 mA

500

 

 

mV

 

 

 

 

IF = 15 mA

1

 

 

V

 

IR

continuous reverse current

VR = 30 V; note 1; see Fig.7

1

 

 

μA

 

 

 

 

VR = 40 V; note 1; see Fig.7

10

 

 

μA

 

τ

charge carrier life time

IF = 5 mA; Krakauer method

100

 

 

ps

 

Cd

diode capacitance

VR = 0 V; f = 1 MHz; see Fig.9

5

 

 

pF

 

Note

1. Pulsed test: tp = 300 μs; δ = 0.02.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

 

CONDITIONS

VALUE

UNIT

 

 

 

 

 

 

Rth j-a

thermal resistance from junction to ambient

note 1

 

500

K/W

Note

1. Refer to SOT23 standard mounting conditions.

1996 Mar 20

3

Philips Semiconductors

Product specification

 

 

Schottky barrier (double) diodes

BAS40 series

 

 

GRAPHICAL DATA

MLC361 - 1

102 handbook, halfpage

IF (mA)

10

(1) (2) (3) (4)

1

10 1

10 2

0

0.2

0.4

0.6

0.8

1.0

VF (V)

(1)Tamb = 150 °C.

(2)Tamb = 85 °C.

(3)Tamb = 25 °C.

(4)Tamb = 40 °C.

Fig.6 Forward current as a function of forward voltage; typical values.

MLC364

10 3 handbook, halfpage

r diff (Ω)

102

10

1

 

 

 

 

 

 

 

 

 

 

102

10 1

1

10

IF (mA)

 

 

 

 

 

 

f = 10 KHz.

Fig.8 Differential forward resistance as a function of forward current; typical values.

103

MLC362

 

handbook, halfpage

IR

(μA)

(1)

102

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

(2)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

2

 

 

(3)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

20

 

30

 

0

VR(V)

 

 

 

 

 

 

 

 

 

 

(1)Tamb = 150 °C.

(2)Tamb = 85 °C.

(3)Tamb = 25 °C.

Fig.7 Reverse current as a function of reverse voltage; typical values.

MLC363

5 handbook, halfpage

C d

(pF)

4

3

2

1

0

0

10

20

VR

(V)

30

 

 

 

 

f = 1 MHz; Tamb = 25 °C.

Fig.9 Diode capacitance as a function of reverse voltage; typical values.

1996 Mar 20

4

Philips Semiconductors

 

 

 

 

 

 

Product specification

Schottky barrier (double) diodes

 

 

 

BAS40 series

PACKAGE OUTLINE

 

 

 

 

 

 

 

 

 

 

 

 

3.0

 

 

ok, full pagewidth

 

 

 

 

2.8

 

 

 

 

 

 

 

1.9

B

 

 

 

0.150

 

 

 

 

 

 

 

 

 

 

 

 

0.75

0.090

 

0.95

 

A

0.2 M A B

 

 

 

 

 

0.60

 

 

 

 

 

 

 

 

 

 

2

1

 

 

10o

 

0.1

 

 

 

 

 

 

max

 

 

 

1.4

2.5

max

 

 

 

 

 

 

 

 

 

1.2

max

 

 

10o

 

 

 

 

 

 

 

 

 

 

 

 

max

 

 

 

 

 

 

 

 

 

3

 

 

 

 

1.1

 

 

0

 

 

 

 

max 30o

0.48

 

0.1 M A B

MBC846

 

0.1

 

 

 

max

 

 

 

 

 

 

 

 

 

TOP VIEW

 

 

Dimensions in mm.

Fig.10 SOT23.

DEFINITIONS

Data Sheet Status

Objective specification

This data sheet contains target or goal specifications for product development.

 

 

Preliminary specification

This data sheet contains preliminary data; supplementary data may be published later.

 

 

Product specification

This data sheet contains final product specifications.

 

 

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

1996 Mar 20

5

Соседние файлы в папке SCHB_D