DISCRETE SEMICONDUCTORS
ok, halfpage
M3D088
BAS40 series
Schottky barrier (double) diodes
Product specification |
1996 Mar 20 |
Supersedes data of October 1994
File under Discrete Semiconductors, SC01
Philips Semiconductors |
Product specification |
|
|
|
|
Schottky barrier (double) diodes |
BAS40 series |
|
|
|
|
FEATURES
∙Low forward voltage
∙Guard ring protected
∙Small SMD package
∙Low diode capacitance.
APPLICATIONS
∙Ultra high-speed switching
∙Voltage clamping
∙Protection circuits
∙Blocking diodes.
DESCRIPTION
Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available.
MARKING
TYPE NUMBER |
MARKING |
|
CODE |
||
|
||
|
|
|
BAS40 |
43p |
|
|
|
|
BAS40-04 |
44p |
|
|
|
|
BAS40-05 |
45p |
|
|
|
|
BAS40-06 |
46p |
|
|
|
PINNING
PIN |
|
|
|
BAS40 |
|
||
|
|
|
|
|
|
|
|
|
|
-04 |
|
-05 |
-06 |
||
|
|
|
|
||||
|
|
|
|
|
|
|
|
1 |
a1 |
|
a1 |
|
a1 |
k1 |
|
2 |
n.c. |
|
k2 |
|
a2 |
k2 |
|
3 |
k1 |
|
k1, a2 |
|
k1, k2 |
a1, a2 |
|
|
|
|
|
|
|
||
handbook, 2 columns |
|
|
3 |
|
|||
|
|
|
|||||
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
1 |
|
2 |
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
Top view |
MGC421 |
||||||
Fig.1 Simplified outline (SOT23) and pin configuration.
3
alfpage
1 

2 n.c.
MLC357
Fig.2 BAS40 single diode configuration (symbol).
3
page
1 



2
MLC358
Fig.3 BAS40-04 diode configuration (symbol).
3
fpage
1 


2
MLC359
Fig.4 BAS40-05 diode configuration (symbol).
3
page
1 


2
MLC360
Fig.5 BAS40-06 diode configuration (symbol).
1996 Mar 20 |
2 |
Philips Semiconductors |
|
Product specification |
||||||
|
|
|
|
|
|
|
|
|
Schottky barrier (double) diodes |
|
BAS40 series |
||||||
|
|
|
|
|
|
|
|
|
LIMITING VALUES |
|
|
|
|
|
|
||
In accordance with the Absolute Maximum Rating System (IEC 134). |
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
|
MAX. |
UNIT |
||
|
|
|
|
|
|
|
|
|
Per diode |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
VR |
continuous reverse voltage |
|
− |
|
40 |
|
V |
|
IF |
continuous forward current |
|
− |
|
120 |
mA |
||
IFRM |
repetitive peak forward current |
tp ≤ 1 s; δ ≤ 0.5 |
− |
|
120 |
mA |
||
IFSM |
non-repetitive peak forward current |
tp < 10 ms |
− |
|
200 |
mA |
||
Tstg |
storage temperature |
|
−65 |
|
+150 |
°C |
||
Tj |
junction temperature |
|
− |
|
150 |
°C |
||
Tamb |
operating ambient temperature |
|
−65 |
|
+150 |
°C |
||
ELECTRICAL CHARACTERISTICS |
|
|
|
|
|
|
||
Tamb = 25 °C unless otherwise specified. |
|
|
|
|
|
|
||
|
|
|
|
|
|
|
||
SYMBOL |
PARAMETER |
CONDITIONS |
MAX. |
|
UNIT |
|||
|
|
|
|
|
|
|
|
|
Per diode |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
VF |
continuous forward voltage |
see Fig.6 |
|
|
|
|
|
|
|
|
|
IF = 1 mA |
380 |
|
|
mV |
|
|
|
|
IF = 10 mA |
500 |
|
|
mV |
|
|
|
|
IF = 15 mA |
1 |
|
|
V |
|
IR |
continuous reverse current |
VR = 30 V; note 1; see Fig.7 |
1 |
|
|
μA |
|
|
|
|
|
VR = 40 V; note 1; see Fig.7 |
10 |
|
|
μA |
|
τ |
charge carrier life time |
IF = 5 mA; Krakauer method |
100 |
|
|
ps |
|
|
Cd |
diode capacitance |
VR = 0 V; f = 1 MHz; see Fig.9 |
5 |
|
|
pF |
|
|
Note
1. Pulsed test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
|
CONDITIONS |
VALUE |
UNIT |
|
|
|
|
|
|
Rth j-a |
thermal resistance from junction to ambient |
note 1 |
|
500 |
K/W |
Note
1. Refer to SOT23 standard mounting conditions.
1996 Mar 20 |
3 |
Philips Semiconductors |
Product specification |
|
|
Schottky barrier (double) diodes |
BAS40 series |
|
|
GRAPHICAL DATA
MLC361 - 1
102 handbook, halfpage
IF (mA)
10
(1) (2) (3) (4)
1
10 1
10 2
0 |
0.2 |
0.4 |
0.6 |
0.8 |
1.0 |
VF (V)
(1)Tamb = 150 °C.
(2)Tamb = 85 °C.
(3)Tamb = 25 °C.
(4)Tamb = −40 °C.
Fig.6 Forward current as a function of forward voltage; typical values.
MLC364
10 3 handbook, halfpage
r diff (Ω)
102
10
1 |
|
|
|
|
|
|
|
|
|
|
102 |
||
10 1 |
1 |
10 |
IF (mA) |
|||
|
|
|
|
|
|
|
f = 10 KHz.
Fig.8 Differential forward resistance as a function of forward current; typical values.
103 |
MLC362 |
|
handbook, halfpage
IR
(μA)
(1)
102
10 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
1 |
|
|
|
(2) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
10 |
1 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
10 |
2 |
|
|
(3) |
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
||
|
10 |
20 |
|
30 |
||||||
|
0 |
VR(V) |
||||||||
|
|
|
|
|
|
|
|
|
|
|
(1)Tamb = 150 °C.
(2)Tamb = 85 °C.
(3)Tamb = 25 °C.
Fig.7 Reverse current as a function of reverse voltage; typical values.
MLC363
5 handbook, halfpage
C d
(pF)
4
3
2
1
0
0 |
10 |
20 |
VR |
(V) |
30 |
|
|
|
|
f = 1 MHz; Tamb = 25 °C.
Fig.9 Diode capacitance as a function of reverse voltage; typical values.
1996 Mar 20 |
4 |
Philips Semiconductors |
|
|
|
|
|
|
Product specification |
Schottky barrier (double) diodes |
|
|
|
BAS40 series |
|||
PACKAGE OUTLINE |
|
|
|
|
|
|
|
|
|
|
|
|
3.0 |
|
|
ok, full pagewidth |
|
|
|
|
2.8 |
|
|
|
|
|
|
|
1.9 |
B |
|
|
|
0.150 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0.75 |
0.090 |
|
0.95 |
|
A |
0.2 M A B |
|
|
|
|
||||
|
0.60 |
|
|
|
|
|
|
|
|
|
|
2 |
1 |
|
|
10o |
|
0.1 |
|
|
|
|
|
|
max |
|
|
|
1.4 |
2.5 |
|
max |
|
|
|
|
|||
|
|
|
|
|
1.2 |
max |
|
|
|
10o |
|
|
|
||
|
|
|
|
|
|
|
|
|
|
max |
|
|
|
|
|
|
|
|
|
3 |
|
|
|
|
1.1 |
|
|
0 |
|
|
|
|
max 30o |
0.48 |
|
0.1 M A B |
MBC846 |
||
|
0.1 |
|
|||||
|
|
max |
|
|
|
|
|
|
|
|
|
TOP VIEW |
|
|
|
Dimensions in mm.
Fig.10 SOT23.
DEFINITIONS
Data Sheet Status
Objective specification |
This data sheet contains target or goal specifications for product development. |
|
|
Preliminary specification |
This data sheet contains preliminary data; supplementary data may be published later. |
|
|
Product specification |
This data sheet contains final product specifications. |
|
|
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Mar 20 |
5 |
