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Philips Semiconductors Product specification

Rectifier diode

 

 

 

 

 

 

BY359-1500

 

fast, high-voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GENERAL DESCRIPTION

QUICK REFERENCE DATA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Glass-passivated double diffused

 

SYMBOL

 

PARAMETER

 

 

 

 

MAX.

 

UNIT

 

rectifier diode in a plastic envelope

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

featuring low forward voltage drop,

 

VRRM

 

Repetitive peak reverse voltage

 

1500

 

 

V

 

fast reverse recovery and soft

 

VF

 

Forward voltage

 

 

1.5

 

 

V

 

recovery characteristic. The device is

 

IF(AV)

 

Average forward current

 

 

10

 

 

A

 

intended for use in TV receivers,

 

IFSM

 

Non-repetitive peak forward current

 

60

 

 

A

 

series resonant switched mode

 

trr

 

Reverse recovery time

 

 

0.6

 

 

μs

 

power supplies and other high

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

voltage circuits.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PINNING - TO220AC

PIN CONFIGURATION

SYMBOL

 

 

 

 

 

 

 

 

 

PIN DESCRIPTION

1cathode (k)

2anode (a)

tab cathode (k)

tab

a

k

1 2

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

 

 

 

 

 

 

VRSM

Non-repetitive peak reverse

 

-

1500

V

 

voltage

 

 

 

 

VRRM

Repetitive peak reverse voltage

 

-

1500

V

VRWM

Crest working reverse voltage

sinusoidal; a = 1.57; T 110 ˚C

-

1300

V

I

Average forward current1

-

10

A

F(AV)

 

mb

 

 

 

IF(RMS)

RMS forward current

 

-

15.7

A

IFRM

Repetitive peak forward current

sinusoidal; a = 1.57

-

60

A

IFSM

Non-repetitive peak forward

t = 10 ms

-

60

A

 

current

t = 8.3 ms

-

66

A

 

 

sinusoidal; Tj = 150 ˚C prior to

 

 

 

I2t

I2t for fusing

surge; with reapplied VRWM(max)

-

18

A2s

t = 10 ms

Tstg

Storage temperature

 

-40

150

˚C

Tj

Operating junction temperature

 

-

150

˚C

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

Rth j-mb

Thermal resistance junction to

 

-

-

2.0

K/W

 

mounting base

 

 

 

 

 

Rth j-a

Thermal resistance junction to

in free air.

-

60

-

K/W

 

ambient

 

 

 

 

 

1 Neglecting switching and reverse current losses.

October 1994

1

Rev 1.100

Philips Semiconductors Product specification

Rectifier diode

 

 

 

BY359-1500

 

fast, high-voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

STATIC CHARACTERISTICS

 

 

 

 

 

 

 

Tj = 25 ˚C unless otherwise stated

 

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

 

VF

Forward voltage

IF = 20 A

 

-

1.3

1.8

V

 

 

 

IF = 10 A; Tj = 150˚C

-

1.00

1.5

V

 

IR

Reverse current

VR = 1300 V

-

10

100

mA

 

 

 

VR = 1300 V; Tj = 100 ˚C

-

50

300

mA

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

Tj = 25 ˚C unless otherwise stated

 

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

 

 

 

trr

Reverse recovery time

IF = 2 A; VR

³ 30 V; -dIF/dt = 20 A/ms

-

0.47

0.6

ms

 

Qs

Reverse recovery charge

IF = 2 A; VR

³ 30 V; -dIF/dt = 20 A/ms

-

1.6

2.0

mC

 

Vfr

Peak forward recovery voltage

IF = 10 A; dIF/dt = 30 A/ms

-

11.0

-

V

 

I

 

dI

 

 

F

 

F

 

dt

 

 

 

 

 

 

trr

 

 

 

 

time

 

 

Qs

100%

 

 

25%

 

I

I

 

 

R

 

 

 

rrm

 

 

Fig.1.

Definition of trr, Qs and Irrm

 

I F

time

V F

V fr

V F

time

Fig.2. Definition of Vfr

PF / W

BY359

 

 

Tmb(max) / C

30

Vo = 1.1600 V

 

 

 

 

90

 

 

 

 

D = 1.0

 

 

Rs = 0.0340 Ohms

 

 

 

 

25

 

 

 

 

 

100

 

 

0.5

 

 

 

 

20

 

0.2

 

 

 

110

 

 

 

 

 

 

15

0.1

 

 

 

 

120

 

 

 

 

 

10

 

I

tp

 

tp

130

 

 

 

D = T

 

 

 

 

 

 

5

 

 

 

 

 

140

 

 

 

 

T

t

 

 

 

 

 

 

 

0

5

10

 

15

150

0

 

20

 

 

IF(AV) / A

 

 

 

 

Fig.3. Maximum forward dissipation PF = f(IF(AV)); square wave where IF(AV) =IF(RMS) x ÖD.

PF / W

BY359X

Tmb(max) / C

Vo = 1.16 V

Rs = 0.034 ohms

20

 

 

 

 

a = 1.57

110

 

 

 

1.9

 

 

 

 

2.2

 

 

 

 

 

 

 

 

 

 

 

2.8

 

 

 

 

 

4

 

 

 

 

10

 

 

 

 

 

130

0

 

 

 

 

 

150

0

2

4

6

8

10

12

 

 

 

IF(AV) / A

 

 

 

Fig.4. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).

October 1994

2

Rev 1.100

Philips Semiconductors

Product specification

 

 

Rectifier diode

BY359-1500

fast, high-voltage

 

 

 

IFS(RMS) / A

 

 

BY359

80

 

 

 

 

70

 

 

 

 

60

IFSM

 

 

 

 

 

 

 

50

 

 

 

 

40

 

 

 

 

30

 

 

 

 

20

 

 

 

 

10

 

 

 

 

0

 

 

 

 

1ms

10ms

0.1s

1s

10s

tp / s

Fig.5. Maximum non-repetitive rms forward current. IF = f(tp); sinusoidal current waveform; Tj = 150˚C prior to surge with reapplied VRWM.

IF / A

 

30

 

 

 

Tj=150C

 

 

Tj=25C

 

20

 

 

10

typ

 

 

 

max

0

1.0

2.0

0

 

 

VF / V

Fig.6. Typical and maximum forward characteristic IF = f(VF); parameter Tj

10

trr / us

 

 

 

1.0

 

 

 

IF =

 

 

 

 

 

 

 

 

10A

 

 

 

 

5A

 

 

 

 

2A

 

 

 

 

1A

0.1

 

 

 

 

1.0

10

-dIF/dt (A/us)

100

Fig.7. Maximum reverse recovery time trr = f(dIF/dt); parameter Tj

10

Qs / uC

 

 

 

 

 

IF =

 

 

 

10A

 

 

 

5A

 

 

 

2A

1.0

 

 

1A

 

 

 

0.1

 

 

 

1.0

10

100

 

 

-dIF/dt (A/us)

 

Fig.8. Maximum reverse recovery charge Qs = f(dIF/dt); parameter Tj

10

Zth j-mb / (K/W)

 

 

 

 

 

1

 

 

 

 

 

 

 

0.1

 

 

 

PD

tp

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

t

0.01

 

 

 

 

 

 

 

10us

100us

1ms

10ms

0.1s

1s

10s

 

 

 

 

tp / s

 

 

 

Fig.9. Transient thermal impedance Zth = f(tp)

October 1994

3

Rev 1.100

Philips Semiconductors Product specification

Rectifier diode

 

BY359-1500

fast, high-voltage

 

 

MECHANICAL DATA

 

 

Dimensions in mm

 

4,5

 

 

Net Mass: 2 g

 

max

 

10,3

 

 

max

 

 

1,3

 

 

3,7

 

 

2,8

5,9

 

 

min

 

 

15,8

3,0 max

 

max

 

 

not tinned

 

 

 

3,0

 

 

13,5

 

 

min

 

1,3

 

 

max 1

2

 

(2x)

0,9 max (2x)

0,6

 

 

 

5,08

2,4

Fig.10. TO220AC; pin 1 connected to mounting base.

Notes

1.Accessories supplied on request: refer to mounting instructions for TO220 envelopes.

2.Epoxy meets UL94 V0 at 1/8".

October 1994

4

Rev 1.100

Philips Semiconductors

Product specification

 

 

Rectifier diode

BY359-1500

fast, high-voltage

 

 

 

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

 

 

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

© Philips Electronics N.V. 1994

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

October 1994

5

Rev 1.100

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