Philips Semiconductors Product specification
Rectifier diodes |
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BY329 series |
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fast, soft-recovery |
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GENERAL DESCRIPTION |
QUICK REFERENCE DATA |
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Glass-passivated double diffused |
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PARAMETER |
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MAX. |
MAX. |
MAX. |
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rectifier diodes in a plastic envelope |
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BY329 |
-800 |
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-1000 |
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-1200 |
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featuring low forward voltage drop, |
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fast reverse recovery and soft |
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VRRM |
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Repetitive peak reverse |
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800 |
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1000 |
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1200 |
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recovery characteristic. The devices |
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voltage |
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are intended for use in TV receivers, |
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IF(AV) |
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Average forward current |
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8 |
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8 |
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8 |
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A |
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monitors and switched mode power |
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IFSM |
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Non-repetitive peak |
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75 |
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75 |
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75 |
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A |
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supplies. |
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forward current |
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trr |
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Reverse recovery time |
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135 |
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135 |
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135 |
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ns |
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PINNING - TO220AC |
PIN CONFIGURATION |
SYMBOL |
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PIN DESCRIPTION
1cathode (k)
2anode (a)
tab cathode (k)
tab |
a |
k |
1 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
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UNIT |
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-800 |
-1000 |
-1200 |
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VRSM |
Non-repetitive peak reverse |
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- |
800 |
1000 |
1200 |
V |
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voltage |
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VRRM |
Repetitive peak reverse voltage |
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- |
800 |
1000 |
1200 |
V |
VRWM |
Crest working reverse voltage |
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- |
600 |
800 |
1000 |
V |
I |
Average forward current1 |
square wave; δ = 0.5; |
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8 |
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A |
F(AV) |
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Tmb ≤ 122 ˚C |
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7 |
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A |
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sinusoidal; a = 1.57; |
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IF(RMS) |
RMS forward current |
Tmb ≤ 125 ˚C |
- |
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11 |
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A |
t = 25 μs; δ = 0.5; |
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IFRM |
Repetitive peak forward current |
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16 |
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A |
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IFSM |
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Tmb ≤ 122 ˚C |
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Non-repetitive peak forward |
t = 10 ms |
- |
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75 |
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A |
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current. |
t = 8.3 ms |
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82 |
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A |
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sinusoidal; Tj = 150 ˚C prior |
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to surge; with reapplied |
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I2t |
I2t for fusing |
VRWM(max) |
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28 |
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A2s |
t = 10 ms |
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Tstg |
Storage temperature |
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-40 |
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150 |
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˚C |
Tj |
Operating junction temperature |
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150 |
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˚C |
1 Neglecting switching and reverse current losses.
October 1994 |
1 |
Rev 1.100 |
Philips Semiconductors Product specification
Rectifier diodes |
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BY329 series |
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fast, soft-recovery |
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THERMAL RESISTANCES |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Rth j-mb |
Thermal resistance junction to |
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2.0 |
K/W |
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mounting base |
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Rth j-a |
Thermal resistance junction to |
in free air. |
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60 |
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K/W |
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ambient |
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STATIC CHARACTERISTICS |
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Tj = 25 ˚C unless otherwise stated |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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VF |
Forward voltage |
IF = 20 A |
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1.5 |
1.85 |
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IR |
Reverse current |
VR = VRWM; Tj = 125 ˚C |
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0.1 |
1.0 |
mA |
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DYNAMIC CHARACTERISTICS |
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Tj = 25 ˚C unless otherwise stated |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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trr |
Reverse recovery time |
IF = 1 A; VR > 30 V; -dIF/dt = 50 A/μs |
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100 |
135 |
ns |
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Qs |
Reverse recovery charge |
IF = 2 A; VR > 30 V; -dIF/dt = 20 A/μs |
- |
0.5 |
0.7 |
μC |
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dIR/dt |
Maximum slope of the reverse |
IF = 2 A; -dIF/dt = 20 A/μs |
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50 |
60 |
A/μs |
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recovery current |
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October 1994 |
2 |
Rev 1.100 |
Philips Semiconductors |
Product specification |
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Rectifier diodes |
BY329 series |
fast, soft-recovery |
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I |
dI |
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F |
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F |
dt |
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trr |
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time |
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Qs |
25% |
100% |
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I |
I |
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R |
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rrm |
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Fig.1. Definition of trr, Qs and Irrm |
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PF / W |
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BY329 |
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Tmb(max) / C |
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20 |
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110 |
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Vo = 1.25 V |
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D = 1.0 |
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Rs = 0.03 Ohms |
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15 |
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0.5 |
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120 |
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10 |
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0.2 |
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130 |
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0.1 |
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I |
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tp |
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tp |
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5 |
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D = T |
140 |
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T |
t |
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0 |
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150 |
0 |
2 |
4 |
6 |
8 |
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10 |
12 |
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IF(AV) / A |
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Fig.2. Maximum forward dissipation, PF = f(IF(AV)); square wave current waveform; parameter D = duty cycle = tp/T.
IFS (RMS) / A |
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BY329 |
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100 |
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90 |
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80 |
IFSM |
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70 |
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60 |
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50 |
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40 |
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30 |
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20 |
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10 |
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0 |
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1ms |
10ms |
0.1s |
1s |
10s |
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tp / s |
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Fig.4. Maximum non-repetitive rms forward current. IF = f(tp); sinusoidal current waveform; Tj = 150˚C prior to surge with reapplied VRWM.
IF / A |
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BY229F |
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30 |
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Tj = 150 C |
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Tj = 25 C |
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20 |
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10 |
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typ |
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max |
0 |
0.5 |
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1.5 |
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1 |
2 |
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VF / V |
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Fig.5. Typical and maximum forward characteristic; IF = f(VF); parameter Tj
PF / W |
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BY329 |
Tmb(max) / C |
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15 |
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120 |
Vo = 1.25 V |
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a = 1.57 |
Rs = 0.03 Ohms |
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1.9 |
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10 |
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2.2 |
130 |
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2.8 |
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4 |
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5 |
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140 |
0 |
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150 |
0 |
2 |
4 |
6 |
8 |
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IF(AV) / A |
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Fig.3. Maximum forward dissipation, PF = f(IF(AV)); sinusoidal current waveform; parameter a = form
factor = IF(RMS)/IF(AV).
10 |
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Qs / uC |
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BY329 |
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Tj = 150 C |
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Tj = 25 C |
IF = 10 A |
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10 A |
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2 A |
1 A |
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1 |
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2 A |
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1 A |
0.1 |
10 |
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1 |
100 |
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-dIF/dt (A/us) |
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Fig.6. Maximum Qs at Tj = 25˚C and 150˚C
October 1994 |
3 |
Rev 1.100 |
Philips Semiconductors |
Product specification |
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Rectifier diodes |
BY329 series |
fast, soft-recovery |
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trr / ns |
BY329 |
1000 |
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IF = 10 A |
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10A |
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1 A |
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1A |
100 |
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Tj = 150 C |
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Tj = 25 C |
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10 |
1 |
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10 |
100 |
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-dIF/dt (A/us) |
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Fig.7. Maximum trr measured to 25% of Irrm; Tj = 25˚C |
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and 150˚C |
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100 |
Cd / pF |
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BY329 |
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10 |
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1 |
1 |
10 |
VR / V 100 |
1000 |
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Fig.8. Typical junction capacitance Cd at f = 1 MHz; |
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Tj = 25˚C |
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10 |
Zth j-mb / (K/W) |
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1 |
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0.1 |
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PD |
tp |
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t |
0.01 |
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10us |
100us |
1ms |
10ms |
0.1s |
1s |
10s |
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tp / s |
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Fig.9. Transient thermal impedance Zth = f(tp)
October 1994 |
4 |
Rev 1.100 |
Philips Semiconductors Product specification
Rectifier diodes |
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BY329 series |
fast, soft-recovery |
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MECHANICAL DATA |
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Dimensions in mm |
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4,5 |
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Net Mass: 2 g |
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max |
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10,3 |
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max |
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1,3 |
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3,7 |
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2,8 |
5,9 |
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min |
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15,8 |
3,0 max |
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max |
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not tinned |
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3,0 |
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13,5 |
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min |
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1,3 |
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max 1 |
2 |
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(2x) |
0,9 max (2x) |
0,6 |
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5,08 |
2,4 |
Fig.10. TO220AC; pin 1 connected to mounting base.
Notes
1.Accessories supplied on request: refer to mounting instructions for TO220 envelopes.
2.Epoxy meets UL94 V0 at 1/8".
October 1994 |
5 |
Rev 1.100 |
Philips Semiconductors |
Product specification |
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Rectifier diodes |
BY329 series |
fast, soft-recovery |
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DEFINITIONS
Data sheet status
Objective specification |
This data sheet contains target or goal specifications for product development. |
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Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification |
This data sheet contains final product specifications. |
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1994
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
October 1994 |
6 |
Rev 1.100 |