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DISCRETE SEMICONDUCTORS

k, halfpage

M3D168

BYG60 series

Fast soft-recovery

controlled avalanche rectifiers

Preliminary specification

 

1996 Jun 05

File under Discrete Semiconductors, SC01

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Philips Semiconductors

Preliminary specification

 

 

 

 

Fast soft-recovery

BYG60 series

controlled avalanche rectifiers

FEATURES

Glass passivated

High maximum operating temperature

Low leakage current

Excellent stability

Guaranteed avalanche energy absorption capability

UL 94V-O classified plastic package

Shipped in 12 mm embossed tape.

DESCRIPTION

 

 

 

 

The well-defined void-free case is of a

DO-214AC surface mountable

 

transfer-moulded thermo-setting

 

plastic.

package with glass passivated chip.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

handbook, 4 columns

cathode

 

 

 

 

 

 

 

 

 

 

 

 

 

 

band

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

k

 

 

 

 

 

 

a

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Top view

Side view

MSA474

Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

 

 

 

 

 

 

VRRM

repetitive peak reverse voltage

 

 

 

 

 

BYG60D

 

200

V

 

BYG60G

 

400

V

 

BYG60J

 

600

V

 

BYG60K

 

800

V

 

BYG60M

 

1000

V

 

 

 

 

 

 

VR

continuous reverse voltage

 

 

 

 

 

BYG60D

 

200

V

 

BYG60G

 

400

V

 

BYG60J

 

600

V

 

BYG60K

 

800

V

 

BYG60M

 

1000

V

 

 

 

 

 

 

IF(AV)

average forward current

averaged over any 20 ms period;

1.90

A

 

 

Ttp = 100 °C; see Fig.2

 

 

 

 

 

averaged over any 20 ms period;

0.90

A

 

 

Al2O3 PCB mounting (see Fig.7);

 

 

 

 

 

Tamb = 60 °C; see Fig.3

 

 

 

 

 

averaged over any 20 ms period;

0.65

A

 

 

epoxy PCB mounting (see Fig.7);

 

 

 

 

 

Tamb = 60 °C; see Fig.3

 

 

 

IFSM

non-repetitive peak forward current

t = 10 ms half sine wave;

25

A

 

 

Tj = Tj max prior to surge;

 

 

 

 

 

VR = VRRMmax

 

 

 

1996 Jun 05

2

Philips Semiconductors Preliminary specification

Fast soft-recovery

 

BYG60 series

controlled avalanche rectifiers

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

 

 

 

 

 

 

ERSM

non-repetitive peak reverse

L = 120 mH; Tj = Tj max prior to

 

 

 

 

avalanche energy

surge; inductive load switched off

 

 

 

 

BYG60D to J

 

-

10

mJ

 

BYG60K and M

 

-

7

mJ

 

 

 

 

 

 

Tstg

storage temperature

 

-65

+175

°C

Tj

junction temperature

see Fig.4

-65

+175

°C

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

 

CONDITIONS

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

 

 

VF

forward voltage

 

IF = 1 A; Tj = Tj max; see Fig.5

-

-

0.98

V

 

 

 

IF = 1 A; see Fig.5

-

-

1.20

V

V(BR)R

reverse avalanche

 

IR = 0.1 mA

 

 

 

 

 

breakdown voltage

 

 

 

 

 

 

 

 

BYG60D

 

 

 

300

-

-

V

 

BYG60G

 

 

 

500

-

-

V

 

BYG60J

 

 

 

700

-

-

V

 

BYG60K

 

 

 

900

-

-

V

 

BYG60M

 

 

 

1100

-

-

V

IR

reverse current

 

VR = VRRMmax;

-

-

5

mA

 

 

 

see Fig.6

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VR = VRRMmax; Tj = 165 °C;

-

-

100

mA

 

 

 

see Fig.6

 

 

 

 

 

 

 

 

 

 

 

 

 

trr

reverse recovery time

 

when switched from IF = 0.5 A to

 

 

 

 

 

BYG60D to J

 

IR = 1 A; measured at IR = 0.25 A;

-

-

250

ns

 

BYG60K and M

 

see Fig.8

-

-

300

ns

 

 

 

 

 

 

 

 

 

 

 

 

 

Cd

diode capacitance

 

VR = 0 V; f = 1 MHz

 

 

 

 

 

BYG60D to J

 

 

 

-

30

-

pF

 

BYG60K and M

 

 

 

-

25

-

pF

 

 

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SYMBOL

 

PARAMETER

CONDITIONS

VALUE

UNIT

 

 

 

 

 

 

 

Rth j-tp

thermal resistance from junction to tie-point

 

 

25

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

 

100

K/W

 

 

 

 

 

note 2

 

150

K/W

 

 

 

 

 

 

 

 

 

Notes

1.Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ³35 mm, see Fig.7.

2.Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ³40 mm, see Fig.7. For more information please refer to the ‘General Part of Handbook SC01’.

1996 Jun 05

3

Philips Semiconductors

Preliminary specification

 

 

Fast soft-recovery

BYG60 series

controlled avalanche rectifiers

GRAPHICAL DATA

MGD481

4 handbook, halfpage

IF(AV)

(A)

3

2

1

0

0

100

200

 

 

Ttp (°C)

VR = VRRMmax; δ = 0.5; a = 1.57.

Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).

MGD482

1.6 handbook, halfpage

IF(AV)

(A)

1.2

0.8

0.4

0

0

100

200

 

 

Tamb (°C)

VR = VRRMmax; δ = 0.5; a = 1.57 Device mounted as shown in Fig.7;

solid line: Al2O3 PCB; dotted line: epoxy PCB.

Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).

MGD483

200 handbook, halfpage

Tj (°C)

160

120

80

D

G

J

K

M

40

0

0

400

800

1200

 

 

 

VR (V)

Device mounted as shown in Fig.7

Solid line: Al2O3 PCB

Dotted line: epoxy PCB.

Fig.4 Maximum permissible junction temperature as a function of reverse voltage.

MGD484

10 handbook, halfpage

IF

(A)

8

6

4

2

0

0

1

2

3

 

 

 

VF (V)

Solid line: Tj = 25 °C.

Dotted line: Tj = 175 °C.

Fig.5 Forward current as a function of forward voltage; maximum values.

1996 Jun 05

4

Philips Semiconductors

Preliminary specification

 

 

Fast soft-recovery

BYG60 series

controlled avalanche rectifiers

 

3

 

MGC532

 

10

 

 

 

handbook, halfpage

 

50

 

 

 

 

 

IR

 

 

 

 

(μA)

 

 

 

 

10

2

 

 

 

 

 

 

4.5

 

 

 

 

 

50

10

 

 

2.5

 

1

0

100

1.25

MSB213

 

200

 

 

 

 

Tj (oC)

 

VR = VRMMmax.

 

Dimensions in mm.

 

 

Material: AL2O3 or epoxy-glass.

Fig.6 Reverse current as a function of junction

 

temperature; maximum values.

Fig.7 Printed-circuit board for surface mounting.

handbook, full pagewidth

DUT

IF

 

 

 

(A)

 

 

+

0.5

t rr

10 Ω

25 V

 

 

 

1 Ω

 

 

50 Ω

0

t

 

 

 

 

 

0.25

 

 

 

0.5

 

 

 

IR

 

 

 

(A)

MAM057

 

 

1

 

 

 

Input impedance oscilloscope: 1 MΩ, 22 pF; tr 7 ns.

Source impedance: 50 Ω; tr 15 ns.

Fig.8 Test circuit and reverse recovery time waveform and definition.

1996 Jun 05

5

Philips Semiconductors

Preliminary specification

 

 

Fast soft-recovery

BYG60 series

controlled avalanche rectifiers

PACKAGE OUTLINE

5.5

handbook, full pagewidth 5.1 4.5

4.3

2.3

2.0

0.05

0.2

3.3

 

2.7

MSA414

2.8 1.6

2.4 1.4

Marking band indicates the cathode.

Dimensions in mm.

 

Fig.9 SOD106.

 

 

DEFINITIONS

 

 

 

Data sheet status

 

 

 

Objective specification

This data sheet contains target or goal specifications for product development.

 

 

Preliminary specification

This data sheet contains preliminary data; supplementary data may be published later.

 

 

Product specification

This data sheet contains final product specifications.

 

 

Limiting values

 

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

1996 Jun 05

6

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