DISCRETE SEMICONDUCTORS
book, halfpage
M3D121
BYD57 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification |
1996 Jun 05 |
Supersedes data of October 1993
File under Discrete Semiconductors, SC01
Philips Semiconductors |
Product specification |
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Fast soft-recovery
BYD57 series
controlled avalanche rectifiers
FEATURES
·Glass passivated
·High maximum operating temperature
·Low leakage current
·Excellent stability
·Guaranteed avalanche energy absorption capability
·Shipped in 8 mm embossed tape
·Smallest surface mount rectifier outline.
LIMITING VALUES
DESCRIPTION |
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hermetically sealed and fatigue free |
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Cavity free cylindrical glass SOD87 |
as coefficients of expansion of all |
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used parts are matched. |
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package through Implotecä(1) |
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technology. This package is |
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(1) Implotec is a trademark of Philips. |
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handbook, 4 columns |
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MAM061
Fig.1 Simplified outline (SOD87) and symbol.
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VRRM |
repetitive peak reverse voltage |
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BYD57D |
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200 |
V |
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BYD57G |
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400 |
V |
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BYD57J |
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600 |
V |
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BYD57K |
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800 |
V |
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BYD57M |
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1000 |
V |
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VR |
continuous reverse voltage |
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BYD57D |
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200 |
V |
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BYD57G |
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400 |
V |
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BYD57J |
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600 |
V |
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BYD57K |
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800 |
V |
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BYD57M |
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1000 |
V |
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IF(AV) |
average forward current |
Ttp = 85 °C; see Fig.2; |
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1.0 |
A |
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averaged over any 20 ms period; |
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see also Fig.6 |
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Tamb = 60 °C; PCB mounting (see |
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0.4 |
A |
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Fig.11); see Fig.3; |
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averaged over any 20 ms period; |
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see also Fig.6 |
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IFRM |
repetitive peak forward current |
Ttp = 85 °C; see Fig.4 |
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8.5 |
A |
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Tamb = 60 °C; see Fig.5 |
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3.0 |
A |
IFSM |
non-repetitive peak forward current |
t = 10 ms half sinewave; Tj = 25 °C |
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5.0 |
A |
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prior to surge; VR = VRRMmax |
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ERSM |
non-repetitive peak reverse |
L = 120 mH; Tj = Tj max prior to |
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10 |
mJ |
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avalanche energy |
surge; inductive load switched off |
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Tstg |
storage temperature |
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-65 |
+175 |
°C |
Tj |
junction temperature |
see Fig.7 |
-65 |
+175 |
°C |
1996 Jun 05 |
2 |
Philips Semiconductors |
Product specification |
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Fast soft-recovery
BYD57 series
controlled avalanche rectifiers
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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VF |
forward voltage |
IF = 1 A; Tj = Tj max; |
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2.1 |
V |
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see Fig.8 |
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IF = 1 A; |
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3.6 |
V |
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see Fig.8 |
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V(BR)R |
reverse avalanche breakdown |
IR = 0.1 mA |
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voltage |
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BYD57D |
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300 |
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V |
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BYD57G |
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500 |
- |
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V |
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BYD57J |
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700 |
- |
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V |
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BYD57K |
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900 |
- |
- |
V |
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BYD57M |
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1100 |
- |
- |
V |
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IR |
reverse current |
VR = VRRMmax; |
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5 |
mA |
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see Fig.9 |
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VR = VRRMmax; |
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100 |
mA |
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Tj = 165 °C; see Fig.9 |
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trr |
reverse recovery time |
when switched from |
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BYD57D to J |
IF = 0.5 A to IR = 1 A; |
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30 |
ns |
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BYD57K and M |
measured at IR = 0.25 A; |
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75 |
ns |
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see Fig.12 |
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Cd |
diode capacitance |
f = 1 MHz; VR = 0 V; |
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20 |
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pF |
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see Fig.10 |
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dIR |
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maximum slope of reverse recovery |
when switched from |
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-------- |
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current |
IF = 1 A to VR ³ 30 V |
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dt |
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and dIF/dt = -1 A/ms; |
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A/ms |
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BYD57D to J |
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see Fig.13 |
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BYD57K and M |
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A/ms |
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THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
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CONDITIONS |
VALUE |
UNIT |
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Rth j-tp |
thermal resistance from junction to tie-point |
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30 |
K/W |
Rth j-a |
thermal resistance from junction to ambient |
note 1 |
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150 |
K/W |
Note
1.Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ³40 mm, see Fig.11. For more information please refer to the ‘General Part of Handbook SC01’.
1996 Jun 05 |
3 |
Philips Semiconductors |
Product specification |
|
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Fast soft-recovery
BYD57 series
controlled avalanche rectifiers
GRAPHICAL DATA
2.0 |
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MSA961 |
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I F(AV) |
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(A) |
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1.6 |
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1.2 |
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0.8 |
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0.4 |
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0 |
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0 |
40 |
80 |
120 |
160 |
200 |
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T tp (oC) |
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a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application.
Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
MSA960
0.5 I F(AV)
(A)
0.4
0.3
0.2
0.1
0
0 40 80 120 160 200 Tamb ( o C)
a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.11. Switched mode application.
Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
10 |
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MSA964 |
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handbook, full pagewidth |
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I FRM |
δ = 0.05 |
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(A) |
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8 |
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6 |
0.1 |
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4 |
0.2 |
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2 |
0.5 |
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1 |
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0 |
10 1 |
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10 2 |
10 3 |
10 4 |
10 2 |
1 |
10 |
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tp (ms) |
Ttp = 85 °C; Rth j-tp = 30 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Jun 05 |
4 |
Philips Semiconductors |
Product specification |
|
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Fast soft-recovery
BYD57 series
controlled avalanche rectifiers
4 |
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MSA965 |
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handbook, full pagewidth |
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I FRM |
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(A) |
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3 |
δ = 0.05 |
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2 |
0.1 |
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0.2 |
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1 |
0.5 |
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1 |
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0 |
10 1 |
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10 2 |
10 3 |
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10 4 |
10 2 |
1 |
10 |
tp (ms) |
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Tamb = 60 °C; Rth j-a = 150K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
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MGC525 |
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handbook, halfpage |
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P |
a=3 2.5 |
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1.57 |
1.42 |
(W) |
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2 |
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1 |
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0.5 |
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1.0 |
IF(AV) (A)
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Fig.6 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.
200 |
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MSA962 |
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handbook, halfpage |
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T j |
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( o C) |
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100 |
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D |
G |
J |
K |
M |
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500 |
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1000 |
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VR (V) |
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Solid line = VR.
Dotted line = VRRM; δ = 0.5.
Fig.7 Maximum permissible junction temperature as a function of reverse voltage.
1996 Jun 05 |
5 |
Philips Semiconductors |
Product specification |
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Fast soft-recovery
BYD57 series
controlled avalanche rectifiers
4 |
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MSA963 |
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handbook, halfpage |
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I F |
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(A) |
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3 |
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V F (V) |
Dotted line: Tj = 175 °C. |
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Solid line: Tj = 25 °C. |
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Fig.8 Forward current as a function of forward voltage; maximum values.
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MGC532 |
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handbook, halfpage |
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IR |
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(μA) |
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10 |
2 |
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10 |
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1 |
0 |
100 |
200 |
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Tj (oC) |
VR = VRRMmax. |
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Fig.9 Reverse current as a function of junction temperature; maximum values.
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MGC524 |
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handbook, halfpage |
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Cd |
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(pF) |
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1 |
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103 |
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1 |
10 |
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VR (V) |
f = 1 MHz; Tj = 25 °C.
Fig.10 Diode capacitance as a function of reverse voltage; typical values.
50
4.5
50
2.5
1.25 |
MSB213 |
Dimensions in mm.
Fig.11 Printed-circuit board for surface mounting.
1996 Jun 05 |
6 |
Philips Semiconductors |
Product specification |
|
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Fast soft-recovery
BYD57 series
controlled avalanche rectifiers
handbook, full pagewidth |
DUT |
IF |
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(A) |
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+ |
0.5 |
t rr |
10 Ω |
25 V |
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1 Ω |
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50 Ω |
0 |
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0.25 |
t |
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0.5 |
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IR |
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(A) |
MAM057 |
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1 |
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Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.12 Test circuit and reverse recovery time waveform and definition.
ndbook,I |
halfpage |
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F |
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dI F |
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dt |
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trr |
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10% |
t |
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dI R |
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dt |
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100% |
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IR |
MGC499 |
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Fig.13 Reverse recovery definitions.
1996 Jun 05 |
7 |
Philips Semiconductors |
Product specification |
|
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Fast soft-recovery
BYD57 series
controlled avalanche rectifiers
PACKAGE OUTLINE
3.5 
0.2
handbook, full pagewidth
0.3
O D = 2.05 0.05
MBA505 |
O D1 = |
1.9 |
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0.1 |
Dimensions in mm.
The marking band indicates the cathode.
Fig.14 SOD87.
DEFINITIONS
Data Sheet Status
Objective specification |
This data sheet contains target or goal specifications for product development. |
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Preliminary specification |
This data sheet contains preliminary data; supplementary data may be published later. |
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Product specification |
This data sheet contains final product specifications. |
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Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Jun 05 |
8 |