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DISCRETE SEMICONDUCTORS

handbook, 2 columns

M3D116

BYV26 series

Fast soft-recovery

controlled avalanche rectifiers

Product speciﬁcation

1996 May 30

Supersedes data of February 1994

File under Discrete Semiconductors, SC01

Philips Semiconductors	Product speciﬁcation

Fast soft-recovery

BYV26 series

controlled avalanche rectiﬁers

FEATURES

∙Glass passivated

∙High maximum operating temperature

∙Low leakage current

∙Excellent stability

∙Guaranteed avalanche energy absorption capability

∙Available in ammo-pack.

	DESCRIPTION	This package is hermetically sealed
	Rugged glass SOD57 package, using	and fatigue free as coefficients of
		expansion of all used parts are
	a high temperature alloyed
		matched.
	construction.

k	a
2/3 page (Datasheet)

MAM047

Fig.1 Simplified outline (SOD57) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT

VRRM	repetitive peak reverse voltage
	BYV26A		−	200	V
	BYV26B		−	400	V
	BYV26C		−	600	V
	BYV26D		−	800	V
	BYV26E		−	1000	V
	BYV26F		−	1200	V
	BYV26G		−	1400	V

VR	continuous reverse voltage
	BYV26A		−	200	V
	BYV26B		−	400	V
	BYV26C		−	600	V
	BYV26D		−	800	V
	BYV26E		−	1000	V
	BYV26F		−	1200	V
	BYV26G		−	1400	V

IF(AV)	average forward current	Ttp = 85 °C; lead length = 10 mm;
	BYV26A to E	see Figs 2 and 3;	−	1.00	A
	BYV26F and G	averaged over any 20 ms period;	−	1.05	A
	BYV26F and G	see also Figs 10 and 11	−	1.05	A
		see also Figs 10 and 11

IF(AV)	average forward current	Tamb = 60 °C; PCB mounting (see
	BYV26A to E	Fig.19); see Figs 4 and 5;	−	0.65	A
	BYV26F and G	averaged over any 20 ms period;	−	0.68	A
	BYV26F and G	see also Figs 10 and 11	−	0.68	A
		see also Figs 10 and 11

IFRM	repetitive peak forward current	Ttp = 85 °C; see Figs 6 and 7
	BYV26A to E		−	10.0	A
	BYV26F and G		−	9.6	A

1996 May 30

Philips Semiconductors Product speciﬁcation

Fast soft-recovery			BYV26 series
controlled avalanche rectiﬁers			BYV26 series
controlled avalanche rectiﬁers


SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT

IFRM	repetitive peak forward current	Tamb = 60 °C; see Figs 8 and 9
	BYV26A to E		−	6.0	A
	BYV26F and G		−	6.4	A

IFSM	non-repetitive peak forward current	t = 10 ms half sine wave; Tj = Tj max	−	30	A
		prior to surge; VR = VRRMmax
ERSM	non-repetitive peak reverse	IR = 400 mA; Tj = Tj max prior to	−	10	mJ
	avalanche energy	surge; inductive load switched off

Tstg	storage temperature		−65	+175	°C
Tj	junction temperature	see Figs 12 and 13	−65	+175	°C

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT

VF	forward voltage	IF = 1 A; Tj = Tj max;
	BYV26A to E	see Figs 14 and 15	−	−	1.3	V
	BYV26F and G		−	−	1.3	V

VF	forward voltage	IF = 1 A;
	BYV26A to E	see Figs 14 and 15	−	−	2.50	V
	BYV26F and G		−	−	2.15	V

V(BR)R	reverse avalanche breakdown	IR = 0.1 mA
	voltage
	BYV26A		300	−	−	V
	BYV26B		500	−	−	V
	BYV26C		700	−	−	V
	BYV26D		900	−	−	V
	BYV26E		1100	−	−	V
	BYV26F		1300	−	−	V
	BYV26G		1500	−	−	V

IR	reverse current	VR = VRRMmax; see Fig.16	−	−	5	μA
		VR = VRRMmax;	−	−	150	μA
		Tj = 165 °C; see Fig.16
trr	reverse recovery time	when switched from
	BYV26A to C	IF = 0.5 A to IR = 1 A;	−	−	30	ns
	BYV26D and E	measured at IR = 0.25 A;	−	−	75	ns
	BYV26D and E	see Fig.20	−	−	75	ns
	BYV26F and G	see Fig.20	−	−	150	ns
	BYV26F and G		−	−	150	ns

Cd	diode capacitance	f = 1 MHz; VR = 0 V;
	BYV26A to C	see Figs 17 and 18	−	45	−	pF
	BYV26D and E		−	40	−	pF
	BYV26F and G		−	35	−	pF

1996 May 30

Philips Semiconductors Product speciﬁcation

Fast soft-recovery

BYV26 series

controlled avalanche rectiﬁers

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

dIR

maximum slope of reverse recovery

when switched from

--------

current

IF = 1 A to VR ³ 30 V and

dIF/dt = -1 A/ms;

A/ms

BYV26A to C

see Fig.21

BYV26D and E

A/ms

BYV26F and G

A/ms

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

lead length = 10 mm

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

100

K/W

Note

1.Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ³40 mm, see Fig.19. For more information please refer to the ‘General Part of Handbook SC01’.

1996 May 30

Philips Semiconductors	Product speciﬁcation

Fast soft-recovery

BYV26 series

controlled avalanche rectiﬁers

GRAPHICAL DATA

MSA855

1 handbook, halfpage

20 15 10 lead length (mm)

IF(AV)

(A)

0.5

0	100	T tp	(	o	C)	200
		T tp	(		C)

BYV26A to E

a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application.

Fig.2 Maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage).

2						MLB533
2
handbook, halfpage
I F(AV)
(A)
	lead length 10 mm
1
0				o
0	100	T tp	(	o	C)	200
		T tp	(		C)

BYV26F and G

a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application.

Fig.3 Maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage).

MSA856

1 handbook, halfpage

IF(AV)

(A)

0.5

0	100	Tamb (	o	C)	200
		Tamb (		C)

BYV26A to E

a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.19.

Switched mode application.

Fig.4 Maximum average forward current as a function of ambient temperature (including losses due to reverse leakage).

MLB534

1 handbook, halfpage

IF(AV)

(A)

0.5

0	100	Tamb (	o	C)	200
		Tamb (		C)

BYV26F and G

a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.19.

Switched mode application.

Fig.5 Maximum average forward current as a function of ambient temperature (including losses due to reverse leakage).

1996 May 30

Philips Semiconductors	Product speciﬁcation

Fast soft-recovery

BYV26 series

controlled avalanche rectiﬁers

MSA860

IFRM

(A)

10
10			δ = 0.05
8			δ = 0.05


6
6			0.1
4

			0.2

2			0.5



0			1


10 2	10 1	1	10	10 2	10 3	t p (ms)	10 4

BYV26A to E.

Ttp = 85°C; Rth j-tp = 46 K/W.

VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.

Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

10								MLB535
10
I FRM				δ = 0.05
(A)				δ = 0.05
8
6				0.1
6
4				0.2
4
				0.5
2
				1
0	2	10 1	1	10	10 2	10 3		10 4
10	2	10 1	1	10	10 2	10 3	t p (ms)	10 4

BYV26F and G.

Ttp = 85°C; Rth j-tp = 46 K/W.

VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V.

Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

1996 May 30 6

Philips Semiconductors	Product speciﬁcation

Fast soft-recovery

BYV26 series

controlled avalanche rectiﬁers

MSA859

6
6
I FRM
(A)			δ = 0.05
5
5
4

			0.1
			0.1
3
3			0.2
2			0.2

			0.5
			0.5
1			1
1
0


10 2	10 1	1	10	10 2	10 3	t p (ms)	10 4

BYV26A to E

Tamb = 60 °C; Rth j-a = 100 K/W.

VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.

Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

8								MLB536
8
I FRM
(A)
6			δ = 0.05
4			0.1
4
			0.2
2
			0.5
			1
0	2	10 1	1	10	10 2	10 3		10 4
10	2	10 1	1	10	10 2	10 3	t p (ms)	10 4
BYV26F and G
Tamb = 60 °C; Rth j-a = 100 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V.

Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

1996 May 30 7

Philips Semiconductors	Product speciﬁcation

Fast soft-recovery

BYV26 series

controlled avalanche rectiﬁers

MSA854

(W)

a = 3 2.5 2 1.57

1.42

0	0.5	I F(AV) (A)	1
		I F(AV) (A)

BYV26A to E

a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.

Fig.10 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.

3				MLB532
3
P
(W)
2		a = 3	2.5	2
2				1.57
				1.57
				1.42
1
0
0	0.5	I F(AV) (A)		1
		I F(AV) (A)

BYV26F and G

a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.

Fig.11 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.

MSA857

200 handbook, halfpage

T j (oC)

100

0	400	800	V R	(V)	1200
			V R	(V)

BYV26A to E

Solid line = VR.

Dotted line = VRRM; δ = 0.5.

Fig.12 Maximum permissible junction temperature as a function of reverse voltage.

MLB599

200 handbook, halfpage

T j ( oC)

100

F G

0	1000	VR (V)	2000
		VR (V)

BYV26F and G

Solid line = VR.

Dotted line = VRRM; δ = 0.5.

Fig.13 Maximum permissible junction temperature as a function of reverse voltage.

1996 May 30

Philips Semiconductors	Product speciﬁcation

Fast soft-recovery

BYV26 series

controlled avalanche rectiﬁers

8				MSA853
8
handbook, halfpage
IF
(A)
6
4
2
0
0	2	4	6	8
				VF (V)

BYV26A to E

Dotted line: Tj = 175 °C.

Solid line: Tj = 25 °C.

Fig.14 Forward current as a function of forward voltage; maximum values.

MBD427

8 handbook, halfpage

(A)

VF (V)

BYV26F and G

Dotted line: Tj = 175 °C.

Solid line: Tj = 25 °C.

Fig.15 Forward current as a function of forward voltage; maximum values.

103	MGC550

handbook, halfpage

(μA)

102

0	100	Tj (°C)	200
		Tj (°C)

VR = VRRMmax.

Fig.16 Reverse current as a function of junction temperature; maximum values.

10	2			MSA858
10	2
handbook, halfpage
Cd
(pF)
		BYV26A,B,C
10
		BYV26D,E
	1		102		103
	1	10	102	V R (V)	103
				V R (V)
BYV26A to E
f = 1 MHz; Tj = 25 °C.

Fig.17 Diode capacitance as a function of reverse voltage, typical values.

1996 May 30

Philips Semiconductors	Product speciﬁcation

Fast soft-recovery

BYV26 series

controlled avalanche rectiﬁers

10	2				MBD437	50
10	2					50
handbook, halfpage						handbook, halfpage
						handbook, halfpage
						25
C d
(pF)
						7
						50
10
						2
	1					3
	1		102	10 3		4
	1	10	102	10 3	10	4
					VR (V)	MGA200
					VR (V)

BYV26F and G
f = 1 MHz; Tj = 25 °C.
	Dimensions in mm.
Fig.18 Diode capacitance as a function of reverse
voltage, typical values.	Fig.19 Device mounted on a printed-circuit board.

handbook, full pagewidth	DUT	IF
		(A)
	+	0.5	t rr
10 Ω	25 V		t rr
		1 Ω
	50 Ω	0
		0.25	t
		0.25
		0.5
		IR
		(A)	MAM057
		1	MAM057
		1

Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.

Source impedance: 50 Ω; tr ≤ 15 ns.

Fig.20 Test circuit and reverse recovery time waveform and definition.

1996 May 30

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