DISCRETE SEMICONDUCTORS
handbook, 2 columns
M3D118
BYM26 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification |
1996 May 24 |
Supersedes data of February 1994
File under Discrete Semiconductors, SC01
Philips Semiconductors |
Product specification |
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Fast soft-recovery
BYM26 series
controlled avalanche rectifiers
FEATURES
∙Glass passivated
∙High maximum operating temperature
∙Low leakage current
∙Excellent stability
∙Guaranteed avalanche energy absorption capability
∙Available in ammo-pack
∙Also available with preformed leads for easy insertion.
DESCRIPTION |
construction. This package is |
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Rugged glass SOD64 package, |
hermetically sealed and fatigue free |
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as coefficients of expansion of all |
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using a high temperature alloyed |
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used parts are matched. |
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k |
a |
2/3 page (Datasheet) |
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MAM104
Fig.1 Simplified outline (SOD64) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VRRM |
repetitive peak reverse voltage |
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BYM26A |
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− |
200 |
V |
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BYM26B |
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− |
400 |
V |
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BYM26C |
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− |
600 |
V |
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BYM26D |
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− |
800 |
V |
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BYM26E |
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− |
1000 |
V |
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BYM26F |
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− |
1200 |
V |
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BYM26G |
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− |
1400 |
V |
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VR |
continuous reverse voltage |
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BYM26A |
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− |
200 |
V |
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BYM26B |
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− |
400 |
V |
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BYM26C |
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− |
600 |
V |
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BYM26D |
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− |
800 |
V |
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BYM26E |
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− |
1000 |
V |
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BYM26F |
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− |
1200 |
V |
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BYM26G |
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− |
1400 |
V |
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IF(AV) |
average forward current |
Ttp = 55 °C; lead length = 10 mm; |
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BYM26A to E |
see Figs 2 and 3; |
− |
2.30 |
A |
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BYM26F and G |
averaged over any 20 ms period; |
− |
2.40 |
A |
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see also Figs 10 and 11 |
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IF(AV) |
average forward current |
Tamb = 65 °C; PCB mounting (see |
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BYM26A to E |
Fig.19); see Figs 4 and 5; |
− |
1.05 |
A |
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BYM26F and G |
averaged over any 20 ms period; |
− |
1.00 |
A |
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see also Figs 10 and 11 |
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1996 May 24 |
2 |
Philips Semiconductors |
Product specification |
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Fast soft-recovery
BYM26 series
controlled avalanche rectifiers
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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IFRM |
repetitive peak forward current |
Ttp = 55 °C; see Figs 6 and 7 |
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BYM26A to E |
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− |
19 |
A |
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BYM26F and G |
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− |
21 |
A |
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IFRM |
repetitive peak forward current |
Tamb = 65 °C; see Figs 8 and 9 |
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BYM26A to E |
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− |
8.0 |
A |
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BYM26F and G |
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− |
8.5 |
A |
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IFSM |
non-repetitive peak forward current |
t = 10 ms half sine wave; Tj = Tj max |
− |
45 |
A |
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prior to surge; VR = VRRMmax |
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ERSM |
non-repetitive peak reverse |
L = 120 mH; Tj = Tj max prior to surge; |
− |
10 |
mJ |
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avalanche energy |
inductive load switched off |
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Tstg |
storage temperature |
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−65 |
+175 |
°C |
Tj |
junction temperature |
see Figs 12 and 13 |
−65 |
+175 |
°C |
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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VF |
forward voltage |
IF = 2 A; Tj = Tj max; |
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BYM26A to E |
see Figs 14 and 15 |
− |
− |
1.34 |
V |
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BYM26F and G |
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− |
− |
1.34 |
V |
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VF |
forward voltage |
IF = 2 A; |
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BYM26A to E |
see Figs 14 and 15 |
− |
− |
2.65 |
V |
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BYM26F and G |
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− |
− |
2.30 |
V |
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V(BR)R |
reverse avalanche breakdown |
IR = 0.1 mA |
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voltage |
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BYM26A |
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300 |
− |
− |
V |
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BYM26B |
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500 |
− |
− |
V |
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BYM26C |
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700 |
− |
− |
V |
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BYM26D |
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900 |
− |
− |
V |
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BYM26E |
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1100 |
− |
− |
V |
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BYM26F |
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1300 |
− |
− |
V |
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BYM26G |
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1500 |
− |
− |
V |
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IR |
reverse current |
VR = VRRMmax; |
− |
− |
10 |
μA |
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see Fig.16 |
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VR = VRRMmax; |
− |
− |
150 |
μA |
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Tj = 165 °C; see Fig.16 |
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trr |
reverse recovery time |
when switched from |
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BYM26A to C |
IF = 0.5 A to IR = 1 A; |
− |
− |
30 |
ns |
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BYM26D and E |
measured at IR = 0.25 A; |
− |
− |
75 |
ns |
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see Fig.20 |
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BYM26F and G |
− |
− |
150 |
ns |
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1996 May 24 |
3 |
Philips Semiconductors Product specification
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Fast soft-recovery |
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BYM26 series |
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controlled avalanche rectifiers |
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SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
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TYP. |
MAX. |
UNIT |
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Cd |
diode capacitance |
f = 1 MHz; VR = 0 V; |
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BYM26A to C |
see Figs 17 and 18 |
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- |
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85 |
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pF |
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BYM26D and E |
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- |
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75 |
- |
pF |
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BYM26F and G |
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- |
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65 |
- |
pF |
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dIR |
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maximum slope of reverse recovery |
when switched from |
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-------- |
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current |
IF = 1 A to VR ³ 30 V and |
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dt |
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dIF/dt = -1 A/ms; |
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- |
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A/ms |
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BYM26A to C |
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7 |
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see Fig.21 |
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BYM26D and E |
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- |
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6 |
A/ms |
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BYM26F and G |
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- |
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5 |
A/ms |
THERMAL CHARACTERISTICS |
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SYMBOL |
PARAMETER |
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CONDITIONS |
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VALUE |
UNIT |
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Rth j-tp |
thermal resistance from junction to tie-point |
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lead length = 10 mm |
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25 |
K/W |
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Rth j-a |
thermal resistance from junction to ambient |
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note 1 |
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75 |
K/W |
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Note
1.Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ³40 mm, see Fig.19. For more information please refer to the ‘General Part of Handbook SC01’.
1996 May 24 |
4 |
Philips Semiconductors |
Product specification |
|
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Fast soft-recovery
BYM26 series
controlled avalanche rectifiers
GRAPHICAL DATA
MSA875
2.4 handbook, halfpage
IF(AV)
(A)
1.8
20
15
10 lead length (mm)
1.2
0.6
0
0 |
100 |
Ttp ( |
o |
C) |
200 |
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BYM26A to E
a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application.
Fig.2 Maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage).
MLB490
2.0 handbook, halfpage
IF(AV)
(A)
1.6
1.2
0.8
0.4
0
0 |
100 |
Tamb (oC) 200 |
BYM26A to E
a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.19.
Switched mode application.
Fig.4 Maximum average forward current as a function of ambient temperature (including losses due to reverse leakage).
3 |
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MBD421 |
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handbook, halfpage |
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I F(AV) |
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(A) |
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2 |
lead length 10 mm |
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1 |
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0 |
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0 |
100 |
T |
(oC) |
200 |
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tp |
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BYM26F and G |
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a = 1.42; VR = VRRMmax; δ = 0.5. |
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Switched mode application.
Fig.3 Maximum average forward current as a function of tie-point temperature (including losses due to reverse leakage).
MBD416
2.0 handbook, halfpage
IF(AV)
(A)
1.6
1.2
0.8
0.4
0
0 |
100 |
Tamb (oC) 200 |
BYM26F and G
a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.19.
Switched mode application.
Fig.5 Maximum average forward current as a function of ambient temperature (including losses due to reverse leakage).
1996 May 24 |
5 |
Philips Semiconductors |
Product specification |
|
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Fast soft-recovery
BYM26 series
controlled avalanche rectifiers
MSA879
20 |
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I FRM |
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(A) |
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δ = 0.05 |
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0.1 |
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0.2 |
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0.5 |
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10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4
BYM26A to E
Ttp = 55°C; Rth j-tp = 25 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
25 |
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MBD449 |
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I FRM |
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(A) |
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δ = 0.05 |
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0.1 |
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t p (ms) |
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BYM26F and G |
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Ttp = 55°C; Rth j-tp = 25 K/W. |
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VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 May 24 6
Philips Semiconductors |
Product specification |
|
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Fast soft-recovery
BYM26 series
controlled avalanche rectifiers
MSA878
10
IFRM
(A)
8 |
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δ = 0.05 |
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0.1 |
4 |
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10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4
BYM26A to E
Tamb = 65 °C; Rth j-a = 75 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
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MBD443 |
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I FRM |
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(A) |
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t p (ms) |
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BYM26F and G |
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Tamb = 65 °C; Rth j-a = 75 K/W. |
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VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V. |
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Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 May 24 7
Philips Semiconductors |
Product specification |
|
|
Fast soft-recovery
BYM26 series
controlled avalanche rectifiers
5 |
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MSA876 |
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P |
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a |
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2 1.57 |
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I F(AV) (A)
BYM26A to E
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Switched mode application.
Fig.10 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.
MSA873
200 handbook, halfpage
Tj (°C)
100
A |
B |
C |
D |
E |
0
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400 |
800 |
1200 |
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VR (V) |
BYM26A to E
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
Fig.12 Maximum permissible junction temperature as a function of reverse voltage.
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MBD430 |
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P |
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2 |
1.57 1.42 |
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I F(AV)(A) |
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BYM26F and G
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Switched mode application.
Fig.11 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.
MLB601
200 handbook, halfpage
T j (oC)
100
F G
0
0 |
1000 |
VR (V) |
2000 |
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BYM26F and G
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
Fig.13 Maximum permissible junction temperature as a function of reverse voltage.
1996 May 24 |
8 |
Philips Semiconductors |
Product specification |
|
|
Fast soft-recovery
BYM26 series
controlled avalanche rectifiers
10 |
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MSA877 |
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handbook, halfpage |
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IF |
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(A) |
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8 |
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VF |
(V) |
BYM26A to E
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Fig.14 Forward current as a function of forward voltage; maximum values.
10 |
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MBD426 |
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handbook, halfpage |
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IF |
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(A) |
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VF (V) |
BYM26F and G
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Fig.15 Forward current as a function of forward voltage; maximum values.
103 |
MGC549 |
|
handbook, halfpage
IR
(μA)
102
10
1
0 |
100 |
Tj (°C) |
200 |
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VR = VRRMmax.
Fig.16 Reverse current as a function of junction temperature; maximum values.
10 |
2 |
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MSA874 |
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handbook, halfpage |
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Cd |
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BYM26A,B,C |
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(pF) |
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10 |
BYM26D,E |
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10 |
V R (V) |
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BYM26A to E |
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f = 1 MHz; Tj = 25 °C. |
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Fig.17 Diode capacitance as a function of reverse voltage; typical values.
1996 May 24 |
9 |
Philips Semiconductors |
Product specification |
|
|
Fast soft-recovery
BYM26 series
controlled avalanche rectifiers
10 |
2 |
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MBD435 |
50 |
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handbook, halfpage |
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handbook, halfpage |
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25 |
C d |
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(pF) |
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10 |
VR (V) |
MGA200 |
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BYM26F and G |
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f = 1 MHz; Tj = 25 °C. |
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Dimensions in mm. |
Fig.18 Diode capacitance as a function of reverse |
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voltage; typical values. |
Fig.19 Device mounted on a printed-circuit board. |
handbook, full pagewidth |
DUT |
IF |
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(A) |
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+ |
0.5 |
t rr |
10 Ω |
25 V |
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1 Ω |
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50 Ω |
0 |
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0.25 |
t |
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0.5 |
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IR |
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(A) |
MAM057 |
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1 |
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Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.20 Test circuit and reverse recovery time waveform and definition.
1996 May 24 |
10 |