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Philips Semiconductors	Product Specification

PowerMOS transistor	BUK482-100A

GENERAL DESCRIPTION

QUICK REFERENCE DATA

N-channel enhancement mode

SYMBOL

PARAMETER

MAX.

UNIT

field-effect power transistor in a

plastic envelope suitable for surface

DSV

Drain-source voltage

100

mount applications.

D I

Drain current (DC)

1.8

The device is intended for use in

Total power dissipation

1.8

tot

automotive and general purpose

j T

Junction temperature

150

˚C

switching applications.

Drain-source on-state

0.28

DS(ON)

resistance;

V = 10 V

PINNING - SOT223

PIN CONFIGURATION

SYMBOL

DESCRIPTION

gate

drain

source

drain (tab)

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

Drain-source voltage

100

Drain-gate voltage

R = 20 kW

100

DGR

VGS

Gate-source voltage

= 25 ˚C

Drain current (DC)

1.8

Drain current (DC)

amb

= 100 ˚C

1.1

Drain current (pulse peak value)

amb

7.2

T = 25 ˚C

Total power dissipation

amb

1.8

T = 25 ˚C

tot

amb

Tstg

Storage temperature

- 55

150

˚C

Junction Temperature

150

˚C

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Rth j-b

Mounted on any PCB e.g. Fig.18

K/W

From junction to board

Rth j-amb

From junction to ambient

Mounted on PCB of Fig.18

K/W

1 Temperature measured 1-3 mm from tab.

April 1993

Rev 1.100

PowerMOS transistor	BUK482-100A

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS						MIN.	TYP.	MAX.	UNIT
V	Drain-source breakdown	V = 0 V; I		= 0.25 mA				100	-	-	V
(BR)DSS	voltage	GS	D
	voltage
V	Gate threshold voltage	V = V	; I	= 1 mA				2.1	3.0	4.0	V
GS(TO)	Zero gate voltage drain current	DS	GS D			= 0	V;	-	1	10	mA
I	Zero gate voltage drain current	V= 100 V; V				= 0	V;	-	1	10	mA
DSS	Zero gate voltage drain current	DS			GS	= 0	V; T = 125 ˚C	-	0.1	1.0	mA
I	Zero gate voltage drain current	V= 100 V; V				= 0	V; T = 125 ˚C	-	0.1	1.0	mA
DSS	Gate source leakage current	DS			GS	= 0	j	-	10	100	nA
I	Gate source leakage current	V = 30 V; V				= 0	V	-	10	100	nA
GSS	Drain-source on-state	GS			DS			-	0.21	0.28	W
R	Drain-source on-state	V = 10 V; I			= 1.8 A			-	0.21	0.28	W
DS(ON)	resistance	GS	D
	resistance

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS				MIN.	TYP.	MAX.	UNIT

g	Forward transconductance	V = 25		V; I	= 1.8 A	1.5	2.5	-	S
fs		DS		D
C	Input capacitance	V = 0 V; V			= 25 V; f = 1 MHz	-	300	500	pF
iss		GS		DS
Coss	Output capacitance					-	90	120	pF
Crss	Feedback capacitance					-	35	50	pF
t	Turn-on delay time	V = 30		V; I	= 3 A;	-	9	14	ns
d on	Turn-on rise time	DD		D	= 50 W;	-	25	40	ns
t	Turn-on rise time	V = 10		V; R	= 50 W;	-	25	40	ns
r	Turn-off delay time	GS		GS		-	30	45	ns
t	Turn-off delay time	R	= 50 W			-	30	45	ns
d off		gen
tf	Turn-off fall time					-	20	40	ns

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS		MIN.	TYP.	MAX.	UNIT
IDR	Continuous reverse drain	-		-	-	1.8	A
	current
IDRM	Pulsed reverse drain current	-		-	-	7.2	A
VSD	Diode forward voltage	F I= 1.8 A; VGS = 0 V		-	0.85	1.1	V
trr	Reverse recovery time	FI= 1.8 A; -dIF/dt = 100 A/ms;		-	80	-	ns
Q	Reverse recovery charge	V = -10 V; V = 30 V		-	0.30	-	mC
rr		GS	R

AVALANCHE LIMITING VALUE

SYMBOL	PARAMETER	CONDITIONS		MIN.	TYP.	MAX.	UNIT

WDSS	Drain-source non-repetitive	D =I 1.8 A; VDD ú 25 V;		-	-	40	mJ
	unclamped inductive turn-off	V= 10 V; R = 50 W;
	energy	GS	GS
	energy	T	= 25 ˚C
		amb

April 1993

Rev 1.100

PowerMOS transistor	BUK482-100A

120	PD%				Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0	0	20	40	60	80	100	120	140
	0	20	40	60	80	100	120	140
					Tamb / C

Fig.1.		Normalised power dissipation.
PD% = 100ÎPD/PD 25 ˚C = f(Tamb)
120 ID%				Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0
0	20	40	60	80	100	120		140
			Tamb / C
Fig.2. Normalised continuous drain current.
ID% = 100ÎID/ID 25 ˚C = f(Tamb); conditions: VGS									10 V
Zth j-amb / (K/W)						BUKX82-100
1E+02
D =
0.5
0.2
1E+01
0.1
0.05
0.02
1E+00								tp
					P	tp		tp
					P	tp	D =
					D		D =
								T
1E-01
0						T		t
0						T
1E-02
1E-07		1E-05	1E-03	1E-01		1E+01		1E+03
				t / s

Fig.3. Transient thermal impedance.

Zth j-amb = f(t); parameter D = tp/T

ID / A				BUK482-100A
10			VDS/ID	tp = 10 us
				tp = 10 us
		=		100 us
	RDS(ON)	=
1				1 ms


				10 ms
			DC	100 ms
				100 ms
0.1
				1 s
				10 s
0.01
0.1	1		10	100
			VDS / V

Fig.4. Safe operating area. Tamb = 25 ˚C.
ID & IDM = f(VDS); IDM single pulse; parameter tp
7	ID / A				BUK482-100A
7			6
	20		6
	20
6	10
6	6.5
	6.5				VGS/V =	5.5
					VGS/V =	5.5
5
4
3						5
3
2						4.5
						4.5
1						4
						4
0	0	2	4	6	8	10
	0	2	4	6	8	10
				VDS / V

Fig.5. Typical output characteristics, Tj = 25 ˚C.
	ID = f(VDS); parameter VGS
1	RDS(ON)/ Ohm		5	BUK482-100A
	4	4.5	5	5.5
0.9
0.8
0.7
0.6
0.5
0.4				VGS/V = 6
0.4
0.3				10
				10
0.2				20
				20
0.1
0	0	2	4	6
	0	2	4	6
			ID / A

Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS

April 1993

Rev 1.100

PowerMOS transistor	BUK482-100A

7	ID/ A			BUK482-100A
6
5
4
3
2
1		Tj/ C = 150	25
		Tj/ C = 150	25
0	0	2	4	6	8
	0	2	4	6	8
			VGS/ V
Fig.7.		Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
5	gfs/ S			BUK482-100A
5
4
3
2
1
0	0	2	4		6
	0	2	4		6
			ID/ A

Fig.8.		Typical transconductance, Tj = 25 ˚C.
		gfs = f(ID); conditions: VDS = 25 V
2.0	a					Normalised RDS(ON) = f(Tj)
2.0	a
1.5
1.0
0.5
0	-60	-40 -20	0	20	40	60	80 100 120 140
	-60	-40 -20	0	20	40	60	80 100 120 140
					Tj /	C
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 1.8 A; VGS = 10 V

VGS(TO) / V
4				max.
4
3				typ.
3
				min.
2
1
0
-60	-40 -20	0	20	40	60	80 100 120	140
				Tj /	C
	Fig.10.	Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

ID / A		SUB-THRESHOLD CONDUCTION
1E-01
1E-02
1E-03	2 %		typ	98 %
1E-03
1E-04
1E-05
1E-06
0	1	2	3	4
		VGS / V
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
10000 C / pF
1000
				Ciss
100				Coss
				Coss
				Crss
10
0	20			40
		VDS / V

Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz

April 1993

Rev 1.100

PowerMOS transistor	BUK482-100A

12	VGS/ V
10					VDS/ V = 20
					VDS/ V = 20
8						80
8
6
4
2
0	0	2	4	6	8	10
	0	2	4	6	8	10

QG/ nC

Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 1.8 A; parameter VDS

7	IF/ A							BUK482-100A
7	IF/ A
6
5
4
3			Tj/ C = 150			25
3
2
1
0	0	0.2	0.4	0.6	0.8	1	1.2	1.4	1.6	1.8	2
	0	0.2	0.4	0.6	0.8	1	1.2	1.4	1.6	1.8	2

VSDS/ V

Fig.14. Typical reverse diode current.

IF = f(VSDS); conditions: VGS = 0 V; parameter Tj

WDSS%			Normalised Avalanche Energy
120
110
100
90
80
70
60
50
40
30
20
10
0
20	40	60	80	100	120	140
			Tamb/ C

Fig.15. Normalised avalanche energy rating.
WDSS% = f(Tamb); conditions: ID = 1.8 A
				+		VDD
		L
			VDS	-
VGS				-
VGS						-ID/100
						-ID/100
0			T.U.T.
0
RGS				R 01
RGS				shunt
				shunt
Fig.16. Avalanche energy test circuit.
W = 0.5 Î LI2		Î BV	/(BV	- V	)
DSS	D	DSS	DSS	DD

April 1993

Rev 1.100

PowerMOS transistor	BUK482-100A

MOUNTING INSTRUCTIONS

PRINTED CIRCUIT BOARD

	Dimensions in mm.	Dimensions in mm.
3.8		36
min
1.5		18
min		18
min
	60
	4.6	4.5
	9
2.3	6.3
1.5
min	10
	10
(3x)
1.5
min
4.6		7
		15
	50

Fig.17. soldering pattern for surface mounting	Fig.18. PCB for thermal resistance and power rating
SOT223.	for SOT223.
	PCB: FR4 epoxy glass (1.6 mm thick), copper
	laminate (35 mm thick).

April 1993

Rev 1.100

PowerMOS transistor	BUK482-100A

MECHANICAL DATA

Dimensions in mm

Net Mass: 0.11 g

			6.7
			6.3	B
	0.32		3.1	B
	0.32		3.1			0.2	M	A
	0.24		2.9			0.2	M	A
	0.24		2.9
			4	A
	0.10
	0.02			3.7		7.3
				3.3		6.7
16	13
max
	10	1	2	3
	10
	max
1.8	1.05	2.3	0.80	0.1	M	B
max	0.85		0.60	0.1	M	B
max	0.85		0.60	(4x)
			4.6	(4x)
			4.6

Fig.19. SOT223 surface mounting package.

Notes

1.Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide.

2.Refer to surface mounting instructions for SOT223 envelope.

3.Epoxy meets UL94 V0 at 1/8".

April 1993

Rev 1.100

PowerMOS transistor	BUK482-100A

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Ë Philips Electronics N.V. 1995

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

April 1993

Rev 1.100

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