Philips Semiconductors |
Product Specification |
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PowerMOS transistor |
BUK482-60A |
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GENERAL DESCRIPTION |
QUICK REFERENCE DATA |
N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.
The device is intended for use in automotive and general purpose switching applications.
SYMBOL
DSV
D I
P
tot j T
R
DS(ON)
PARAMETER |
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MAX. |
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UNIT |
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Drain-source voltage |
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60 |
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V |
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Drain current (DC) |
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2.7 |
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A |
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Total power dissipation |
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1.7 |
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W |
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Junction temperature |
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150 |
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˚C |
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Drain-source on-state |
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0.13 |
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Ω |
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ρεσιστανχε; |
ς = 10 ς |
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ΓΣ |
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PINNING - SOT223 |
PIN CONFIGURATION |
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PIN |
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DESCRIPTION |
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4 |
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d |
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1 |
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gate |
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2 |
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drain |
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3 |
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source |
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4 |
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drain (tab) |
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1 |
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2 |
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3 |
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s |
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LIMITING VALUES |
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Limiting values in accordance with the Absolute Maximum System (IEC 134) |
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SYMBOL |
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PARAMETER |
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CONDITIONS |
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MIN. |
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MAX. |
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UNIT |
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VDS |
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Drain-source voltage |
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- |
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- |
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60 |
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V |
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V |
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Drain-gate voltage |
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R |
= 20 kΩ |
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− |
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60 |
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ς |
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DGR |
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Γατε−σουρχε ϖολταγε |
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GS |
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− |
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30 |
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ς |
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±ς ΓΣ |
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− |
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Ι |
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Δραιν χυρρεντ (ΔΧ) |
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Τ |
= 25 Χ |
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− |
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2.7 |
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Α |
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αμβ |
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Ι |
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Δραιν χυρρεντ (ΔΧ) |
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Τ |
= 100 Χ |
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− |
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1.7 |
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Α |
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ΙΔΜ |
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Δραιν χυρρεντ (πυλσε πεακ ϖαλυε) |
αμβαμβΤ= 25 Χ |
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− |
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11 |
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Α |
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Π |
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Τοταλ ποωερ δισσιπατιον |
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Τ = 25 Χ |
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− |
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1.7 |
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Ω |
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τοτ |
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αμβ |
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Τστγ |
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Στοραγε τεμπερατυρε |
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− |
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− 55 |
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150 |
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Χ |
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Τϕ |
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ϑυνχτιον Τεμπερατυρε |
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− |
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− |
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150 |
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Χ |
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THERMAL RESISTANCES |
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SYMBOL |
PARAMETER |
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CONDITIONS |
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MIN. |
TYP. |
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MAX. |
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UNIT |
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Rth j-b |
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1 |
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Mounted on any PCB e.g. Fig.18 |
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- |
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40 |
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K/W |
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From junction to board |
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Rth j-amb |
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From junction to ambient |
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Mounted on PCB of Fig.18 |
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- |
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75 |
K/W |
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1 Temperature measured 1-3 mm from tab.
April 1993 |
1 |
Rev 1.000 |
PowerMOS transistor |
BUK482-60A |
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STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
TYP. |
MAX. |
UNIT |
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V |
Drain-source breakdown |
V = 0 V; I |
= 0.25 mA |
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60 |
- |
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V |
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(BR)DSS |
voltage |
GS |
D |
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V |
Gate threshold voltage |
V = V |
; I |
= 1 mA |
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2.1 |
3.0 |
4.0 |
V |
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GS(TO) |
Zero gate voltage drain current |
DS |
GS D |
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= 0 V; |
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1 |
10 |
μΑ |
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I |
V= 60 V; V |
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ΙΔΣΣDSS |
Ζερο γατε ϖολταγε δραιν χυρρεντ |
ΔΣDSς= 60 ς; ς |
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ΓΣGS = 0 ς; Τ |
ϕ= 125 Χ |
− |
0.1 |
1.0 |
μΑ |
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Ι |
Γατε σουρχε λεακαγε χυρρεντ |
ς = ±30 ς; ς |
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ΔΣ |
= 0 ς |
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− |
10 |
100 |
νΑ |
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ΓΣΣ |
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ΓΣ |
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Ρ ΔΣ(ΟΝ) |
Δραιν−σουρχε ον−στατε |
ΓΣς= 10 ς; Ι |
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= 2.7 Α |
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0.11 |
0.13 |
Ω |
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ρεσιστανχε |
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DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
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TYP. |
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MAX. |
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UNIT |
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g |
Forward transconductance |
V = 25 V; I |
= 2.7 A |
2 |
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3 |
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S |
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fs |
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DS |
D |
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C |
Input capacitance |
V = 0 V; V |
= 25 V; f = 1 MHz |
- |
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300 |
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500 |
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pF |
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iss |
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GS |
DS |
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Coss |
Output capacitance |
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- |
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130 |
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200 |
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pF |
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Crss |
Feedback capacitance |
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- |
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60 |
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100 |
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pF |
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t |
Turn-on delay time |
V = 30 V; I |
= 3 A; |
- |
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8 |
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14 |
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ns |
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d on |
Turn-on rise time |
DD |
D |
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= 50 Ω; |
− |
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25 |
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45 |
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νσ |
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t |
V = 10 V; R |
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r |
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GS |
GS |
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τ |
Τυρν−οφφ δελαψ τιμε |
Ρ = 50 Ω |
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− |
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30 |
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45 |
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νσ |
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τφδ οφφ |
Τυρν−οφφ φαλλ τιμε |
γεν |
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− |
30 |
45 |
νσ |
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REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
TYP. |
MAX. |
UNIT |
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IDR |
Continuous reverse drain |
- |
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- |
- |
2.7 |
A |
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current |
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IDRM |
Pulsed reverse drain current |
- |
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- |
- |
11 |
A |
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VSD |
Diode forward voltage |
F I= 2.7 A; VGS = 0 V |
- |
0.85 |
1.1 |
V |
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trr |
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Reverse recovery time |
FI= 2.7 A; -dIF/dt = 100 A/μσ; |
− |
40 |
− |
νσ |
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Θ |
ρρ |
Ρεϖερσε ρεχοϖερψ χηαργε |
ς = −10 ς; ς |
Ρ |
= 30 ς |
− |
70 |
− |
νΧ |
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ΓΣ |
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AVALANCHE LIMITING VALUE
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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W |
Drain-source non-repetitive |
=I 2.7 A; V ≤ 25 ς; |
− |
− |
30 |
μϑ |
DSS |
υνχλαμπεδ ινδυχτιϖε τυρν−οφφ |
DΓΣ ς= 10 ς; ΡDDΓΣ = 50 Ω; |
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ενεργψ |
Ταμβ = 25 Χ |
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Απριλ 1993 |
2 |
Ρεϖ 1.000 |
PowerMOS transistor |
BUK482-60A |
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120 |
PD% |
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Normalised Power Derating |
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110 |
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100 |
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90 |
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80 |
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70 |
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60 |
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50 |
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40 |
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30 |
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20 |
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10 |
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0 |
0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
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Tamb / C |
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Fig.1. |
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Normalised power dissipation. |
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PD% = 100×PD/PD 25 ˚C = f(Tamb) |
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120 |
ID% |
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Normalised Current Derating |
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110 |
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100 |
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90 |
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80 |
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70 |
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60 |
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50 |
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40 |
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30 |
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20 |
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10 |
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0 |
0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
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Tamb / C |
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Fig.2. Normalised continuous drain current. |
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ID% = 100×ID/ID 25 ˚C = f(Tamb); conditions: VGS ³ 10 V |
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1E+02 |
Zth j-amb / (K/W) |
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BUKX82 |
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D = |
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0.5 |
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1E+01 |
0.2 |
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0.1 |
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0.05 |
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1E+00 |
0.02 |
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tp |
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P |
tp |
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D = |
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D |
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T |
1E-01 |
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0 |
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T |
t |
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1E-02 |
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1E-07 |
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1E-05 |
1E-03 |
1E-01 |
1E+01 |
1E+03 |
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t / s |
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Fig.3. Transient thermal impedance.
Zth j-amb = f(t); parameter D = tp/T
ID / A |
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BUK482-60A |
100 |
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10 |
=VDS/ID |
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tp = 10 us |
RDS(ON) |
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100 us |
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1 ms |
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1 |
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10 ms |
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DC |
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100 ms |
0.1 |
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1 s |
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10 s |
0.01 |
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0.1 |
1 |
10 |
100 |
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VDS / V |
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Fig.4. Safe operating area Tamb = 25 ˚C |
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ID & IDM = f(VDS); IDM single pulse; parameter tp |
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ID / A |
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BUK482-60A |
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10 |
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15 |
7 |
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6.5 |
9 |
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8 |
10 |
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6 |
7 |
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6 |
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5 |
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5.5 |
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4 |
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5 |
3 |
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2 |
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4.5 |
1 |
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VGS / V = 4 |
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0 |
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10 |
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VDS / V |
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Fig.5. Typical output characteristics, Tj = 25 ˚C. |
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ID = f(VDS); parameter VGS |
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RDS(ON) / Ohm |
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BUK482-60A |
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0.5 |
4.5 |
5 |
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5.5 |
6 |
6.5 |
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0.4 |
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0.3 |
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0.2 |
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7 |
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10 |
0.1 |
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VGS / V = 15 |
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0 |
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2 |
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4 |
6 |
8 |
10 |
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ID / A |
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Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS
April 1993 |
3 |
Rev 1.000 |
PowerMOS transistor |
BUK482-60A |
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ID / A |
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BUK482-60A |
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10 |
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9 |
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Tj / C = 25 |
150 |
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8 |
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7 |
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6 |
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5 |
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4 |
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3 |
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2 |
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1 |
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0 |
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0 |
2 |
4 |
6 |
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10 |
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VGS / V |
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Fig.7. |
Typical transfer characteristics. |
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ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj |
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gfs / S |
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BUK482-60A |
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5 |
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4 |
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3 |
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2 |
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1 |
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0 |
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0 |
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4 |
6 |
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10 |
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ID / A |
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Fig.8. Typical transconductance, Tj = 25 ˚C. gfs = f(ID); conditions: VDS = 25 V
a |
Normalised RDS(ON) = f(Tj) |
1.5 |
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1.0 |
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0.5 |
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-60 |
-40 -20 |
0 |
20 |
40 |
60 |
80 100 120 140 |
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Tj / |
C |
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Fig.9. Normalised drain-source on-state resistance. |
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a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 2.7 A; VGS = 10 V |
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VGS(TO) / V |
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4 |
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max. |
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3 |
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typ. |
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min. |
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2 |
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1 |
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0 |
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-60 |
-40 -20 |
0 |
20 |
40 |
60 |
80 100 120 |
140 |
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Tj / |
C |
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Fig.10. |
Gate threshold voltage. |
|
||||
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS |
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ID / A |
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SUB-THRESHOLD CONDUCTION |
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1E-01 |
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1E-02 |
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1E-03 |
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2 % |
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typ |
98 % |
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1E-04 |
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1E-05 |
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1E-06 |
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0 |
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1 |
2 |
3 |
4 |
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VGS / V |
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Fig.11. Sub-threshold drain current. |
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ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS |
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C / pF |
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BUK482-60A |
1000 |
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Ciss |
100 |
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Coss |
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Crss |
10 |
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30 |
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0 |
10 |
20 |
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40 |
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VDS / V |
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Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
April 1993 |
4 |
Rev 1.000 |
PowerMOS transistor |
BUK482-60A |
|
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VGS / V |
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BUK482-60A |
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15 |
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14 |
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13 |
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VDS / V =12 |
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48 |
12 |
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11 |
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10 |
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9 |
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8 |
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7 |
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6 |
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5 |
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4 |
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3 |
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2 |
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1 |
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0 |
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0 |
2 |
4 |
6 |
8 |
10 |
12 |
14 |
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QG / nC |
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Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 2.7 A; parameter VDS
IF / A |
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BUK482-60A |
10 |
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9 |
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8 |
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7 |
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Tj / C = 150 |
25 |
6 |
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5 |
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4 |
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3 |
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2 |
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1 |
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0 |
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1.5 |
0 |
0.5 |
1 |
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VSDS / V |
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Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
WDSS% |
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Normalised Avalanche Energy |
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120 |
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110 |
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100 |
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90 |
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80 |
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70 |
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60 |
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50 |
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40 |
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30 |
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20 |
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10 |
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0 |
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20 |
40 |
60 |
80 |
100 |
120 |
140 |
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Tamb/ C |
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Fig.15. Normalised avalanche energy rating. WDSS% = f(Tamb); conditions: ID = 2.7 A
+ VDD
L
VDS
-
VGS
-ID/100
0 |
T.U.T. |
|
RGS
R 01 shunt
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 × LID2 × BVDSS/(BVDSS - VDD)
Απριλ 1993 |
5 |
Ρεϖ 1.000 |
PowerMOS transistor |
BUK482-60A |
|
|
|
|
MOUNTING INSTRUCTIONS |
PRINTED CIRCUIT BOARD |
|
Dimensions in mm. |
Dimensions in mm. |
3.8 |
|
36 |
min |
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1.5 |
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18 |
min |
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60 |
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4.6 |
4.5 |
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9 |
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2.3 |
6.3 |
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1.5 |
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min |
10 |
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(3x) |
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1.5 |
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min |
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4.6 |
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7 |
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15 |
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50 |
|
Fig.17. soldering pattern for surface mounting |
Fig.18. PCB for thermal resistance and power rating |
SOT223. |
for SOT223. |
|
PCB: FR4 epoxy glass (1.6 mm thick), copper |
|
laminate (35 μm thick). |
April 1993 |
6 |
Rev 1.000 |
PowerMOS transistor |
BUK482-60A |
|
|
|
|
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.11 g
|
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6.7 |
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6.3 |
B |
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0.32 |
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3.1 |
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0.2 |
M |
A |
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0.24 |
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2.9 |
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4 |
A |
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0.10 |
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0.02 |
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3.7 |
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7.3 |
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3.3 |
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6.7 |
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16 |
13 |
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max |
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10 |
1 |
2 |
3 |
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max |
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1.8 |
1.05 |
2.3 |
0.80 |
0.1 |
M |
B |
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max |
0.85 |
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0.60 |
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(4x) |
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4.6 |
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Fig.19. SOT223 surface mounting package.
Notes
1.Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide.
2.Refer to surface mounting instructions for SOT223 envelope.
3.Epoxy meets UL94 V0 at 1/8".
April 1993 |
7 |
Rev 1.000 |
PowerMOS transistor |
BUK482-60A |
|
|
|
|
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification |
This data sheet contains final product specifications. |
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1995
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
April 1993 |
8 |
Rev 1.000 |