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ΔΧ/ΔΧ ανδ ΑΧ/ΔΧ χονϖερτερσ, ανδ |
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ρεσιστανχε; |
ς 5 ς |
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Ω |
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ιν αυτομοτιϖε ανδ γενεραλ πυρποσε |
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ΓΣ |
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σωιτχηινγ αππλιχατιονσ. |
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ΠΙΝΝΙΝΓ − ΣΟΤ186 |
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ΠΙΝ ΧΟΝΦΙΓΥΡΑΤΙΟΝ |
ΣΨΜΒΟΛ |
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ΠΙΝ |
ΔΕΣΧΡΙΠΤΙΟΝ |
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δ |
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χασε |
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1γατε
2 |
δραιν |
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3 |
σουρχε |
γ |
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χασε |
ισολατεδ |
σ |
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1 2 3 |
ΛΙΜΙΤΙΝΓ ςΑΛΥΕΣ Λιμιτινγ ϖαλυεσ ιν αχχορδανχε ωιτη τηε Αβσολυτε Μαξιμυμ Σψστεμ (ΙΕΧ 134)
ΣΨΜΒΟΛ |
ΠΑΡΑΜΕΤΕΡ |
ΧΟΝΔΙΤΙΟΝΣ |
ΜΙΝ. |
ΜΑΞ. |
ΥΝΙΤ |
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ς |
ΔΣ |
Δραιν−σουρχε ϖολταγε |
− |
− |
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60 |
ς |
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ς |
ΔΓΡ |
Δραιν−γατε ϖολταγε |
Ρ = 20 κ Ω |
− |
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60 |
ς |
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ΓΣ |
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±ς |
ΓΣ |
Γατε−σουρχε ϖολταγε |
− |
− |
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15 |
ς |
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±ς |
ΓΣΜ |
Νον−ρεπετιτιϖε γατε−σουρχε ϖολταγε≤ 50τ μσ |
− |
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20 |
ς |
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π |
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−60Α |
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−60Β |
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Ι |
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Δραιν χυρρεντ (ΔΧ) |
Τ = 25 Χ |
− |
13 |
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12 |
Α |
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ησ |
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Ι |
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Δραιν χυρρεντ (ΔΧ) |
Τ = 100 Χ |
− |
8.2 |
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7.6 |
Α |
Ι |
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Δραιν χυρρεντ (πυλσε πεακ ϖαλυε) |
ησ =Τ 25 Χ |
− |
52 |
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48 |
Α |
ΔΜ |
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ησ |
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Πτοτ |
Τοταλ ποωερ δισσιπατιον |
ησΤ= 25 Χ |
− |
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25 |
Ω |
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Τστγ |
Στοραγε τεμπερατυρε |
− |
− 55 |
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150 |
Χ |
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Τϕ |
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ϑυνχτιον Τεμπερατυρε |
− |
− |
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150 |
Χ |
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ΤΗΕΡΜΑΛ ΡΕΣΙΣΤΑΝΧΕΣ
ΣΨΜΒΟΛ |
ΠΑΡΑΜΕΤΕΡ |
ΧΟΝΔΙΤΙΟΝΣ |
ΜΙΝ. |
ΤΨΠ. |
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ΥΝΙΤ |
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Ρ τη ϕ−ησ |
Τηερμαλ ρεσιστανχε ϕυνχτιον το |
ωιτη ηεατσινκ χομπουνδ |
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− |
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− |
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5.0 |
Κ/Ω |
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ηεατσινκ |
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Ρ τη ϕ−α |
Τηερμαλ ρεσιστανχε ϕυνχτιον το |
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55 |
− |
Κ/Ω |
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αμβιεντ |
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Απριλ 1993 |
1 |
Ρεϖ 1.100 |
ΙΔΣΣ ΙΓΣΣ Ρ ΔΣ(ΟΝ)
Ζερο γατε ϖολταγε δραιν χυρρεντ Γατε σουρχε λεακαγε χυρρεντ Δραιν−σουρχε ον−στατε ρεσιστανχε
ΔΣς= 60 ς; ς |
ΓΣ = 0 ς; Τ ϕ=125 Χ |
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ς = ±15 ς; ς |
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= 0 ς |
ΓΣΓΣς= 5 ς; |
ΔΣ |
ΒΥΚ543−60Α |
Ι= 10 Α |
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ΒΥΚ543−60Β |
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μΑ |
− |
0.1 |
1.0 |
μΑ |
− |
10 |
100 |
νΑ |
− |
0.075 |
0.085 |
Ω |
− |
0.08 |
0.10 |
Ω |
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ΔΨΝΑΜΙΧ ΧΗΑΡΑΧΤΕΡΙΣΤΙΧΣ Τησ = 25 Χ υνλεσσ οτηερωισε σπεχιφιεδ
ΣΨΜΒΟΛ |
ΠΑΡΑΜΕΤΕΡ |
ΧΟΝΔΙΤΙΟΝΣ |
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ΜΙΝ. |
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ΤΨΠ. |
ΜΑΞ. |
ΥΝΙΤ |
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γ φσ |
Φορωαρδ τρανσχονδυχτανχε |
ΔΣς = 25 ς; Ι |
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= 10 Α |
7 |
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10 |
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− |
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Σ |
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Χ |
Ινπυτ χαπαχιτανχε |
ς = 0 ς; ς |
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= 25 ς; φ = 1 ΜΗζ |
− |
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700 |
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825 |
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πΦ |
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Χοσσισσ |
Ουτπυτ χαπαχιτανχε |
ΓΣ |
ΔΣ |
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− |
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240 |
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350 |
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πΦ |
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Χρσσ |
Φεεδβαχκ χαπαχιτανχε |
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− |
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130 |
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160 |
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πΦ |
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τδ ον |
Τυρν−ον δελαψ τιμε |
ς = 30 ς; Ι |
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= 3 Α; |
− |
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20 |
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30 |
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νσ |
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τ |
Τυρν−ον ρισε τιμε |
ς = 5 ς; Ρ |
ΓΣ |
= 50 Ω; |
− |
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95 |
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120 |
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νσ |
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ρ |
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ΓΣ |
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τ |
Τυρν−οφφ δελαψ τιμε |
Ρ = 50 Ω |
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− |
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80 |
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110 |
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νσ |
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τφδ οφφ |
Τυρν−οφφ φαλλ τιμε |
γεν |
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− |
65 |
85 |
νσ |
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Λδ |
Ιντερναλ δραιν ινδυχτανχε |
Μεασυρεδ φρομ δραιν λεαδ 6 μμ |
− |
4.5 |
− |
νΗ |
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φρομ παχκαγε το χεντρε οφ διε |
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Λσ |
Ιντερναλ σουρχε ινδυχτανχε |
Μεασυρεδ φρομ σουρχε λεαδ 6 μμ |
− |
7.5 |
− |
νΗ |
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φρομ παχκαγε το σουρχε βονδ παδ |
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ΙΣΟΛΑΤΙΟΝ Τησ = 25 Χ υνλεσσ οτηερωισε σπεχιφιεδ
ΣΨΜΒΟΛ |
ΠΑΡΑΜΕΤΕΡ |
ΧΟΝΔΙΤΙΟΝΣ |
ΜΙΝ. |
ΤΨΠ. |
ΜΑΞ. |
ΥΝΙΤ |
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ς ισολ |
Ρεπετιτιϖε πεακ ϖολταγε φρομ αλλ |
Ρ.≤Η.65% ; χλεαν ανδ δυστφρεε |
− |
− |
1500 |
ς |
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τηρεε τερμιναλσ το εξτερναλ |
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ηεατσινκ |
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Χισολ |
Χαπαχιτανχε φρομ Τ2 το εξτερναλ |
φ = 1 ΜΗζ |
− |
12 |
− |
πΦ |
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ηεατσινκ |
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ΡΕςΕΡΣΕ ΔΙΟΔΕ ΛΙΜΙΤΙΝΓ ςΑΛΥΕΣ ΑΝΔ ΧΗΑΡΑΧΤΕΡΙΣΤΙΧΣ Τησ = 25 Χ υνλεσσ οτηερωισε σπεχιφιεδ
ΣΨΜΒΟΛ |
ΠΑΡΑΜΕΤΕΡ |
ΧΟΝΔΙΤΙΟΝΣ |
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ΜΙΝ. |
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ΤΨΠ. |
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ΜΑΞ. |
ΥΝΙΤ |
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ΙΔΡ |
Χοντινυουσ ρεϖερσε δραιν |
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− |
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− |
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13 |
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Α |
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χυρρεντ |
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ΙΔΡΜ |
Πυλσεδ ρεϖερσε δραιν χυρρεντ |
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52 |
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ς ΣΔ |
Διοδε φορωαρδ ϖολταγε |
Φ =Ι |
13 |
Α ; ς ΓΣ = 0 ς |
− |
1.1 |
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1.3 |
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ς |
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τ |
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Ρεϖερσε ρεχοϖερψ τιμε |
Ι= |
13 |
Α; −δΙ /δτ = 100 Α/μσ; |
− |
60 |
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− |
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νσ |
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ρρ |
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Φ |
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Φ |
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Θ |
ρρ |
Ρεϖερσε ρεχοϖερψ χηαργε |
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ς = 0 ς; ς |
Ρ |
= 30 ς |
− |
0.20 |
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− |
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μΧ |
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ΓΣ |
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Απριλ 1993 |
2 |
Ρεϖ 1.100 |
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unclamped inductive turn-off |
ΓΣ V= 5 V ; R |
£ 25 V ; |
- |
- |
45 |
mJ |
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ΓΣ = 50 W |
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energy |
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120 |
PD% |
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Normalised Power Derating |
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with heatsink compound |
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110 |
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100 |
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90 |
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80 |
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70 |
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60 |
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50 |
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40 |
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30 |
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20 |
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10 |
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0 |
0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
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Ths / C |
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Fig.1. |
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Normalised power dissipation. |
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PD% = 100×PD/PD 25 ˚C = f(Ths) |
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ID% |
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Normalised Current Derating |
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120 |
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with heatsink compound |
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110 |
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100 |
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90 |
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80 |
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70 |
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60 |
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50 |
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40 |
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30 |
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20 |
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10 |
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0 |
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40 |
60 |
80 |
100 |
120 |
140 |
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Ths / C |
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Fig.2. Normalised continuous drain current. |
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ID% = 100×ID/ID 25 ˚C = f(Ths); conditions: VGS ³ 5 V |
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100 |
ID / A |
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A |
BUK543-60 |
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VDS/ID |
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= |
B |
tp = 10 us |
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RDS(ON) |
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10 |
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100 us |
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1 ms |
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DC |
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10 ms |
1 |
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100 ms |
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0.1 |
1 |
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100 |
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VDS / V |
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Fig.3. |
Safe operating area. Ths = 25 ˚C |
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ID & IDM = f(VDS); IDM single pulse; parameter tp |
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1E+01 |
Zth j-hs / (K/W) |
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ZTHX43 |
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0.5 |
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1E+00 |
0.2 |
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0.1 |
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0.05 |
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1E-01 |
0.02 |
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tp |
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tp |
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PD |
D = |
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T |
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0 |
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T |
t |
1E-02 |
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1E-05 |
1E-03 |
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1E-01 |
1E+01 |
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1E-07 |
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t / s |
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Fig.4. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T
April 1993 |
3 |
Rev 1.100 |
ID / A |
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BUK553-50A |
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40 |
10 |
7 |
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VGS / V = |
5 |
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30 |
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20 |
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4 |
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10 |
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2 |
4 |
6 |
8 |
10 |
0 |
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VDS / V |
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Fig.5. Typical output characteristics, Tj = 25 ˚C. |
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ID = f(VDS); parameter VGS |
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0.5 |
RDS(ON) / Ohm |
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BUK553-50A |
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VGS / V = |
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0.4 |
2.5 |
3 |
3.5 |
4 |
4.5 |
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0.3 |
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5 |
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0.2 |
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0.1 |
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7 |
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10 |
0 |
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10 |
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30 |
40 |
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ID / A |
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Fig.6. |
Typical on-state resistance, Tj = 25 ˚C. |
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RDS(ON) = f(ID); parameter VGS |
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ID / A |
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BUK553-50A |
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40 |
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Tj / C = |
25 |
150 |
30 |
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20 |
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10 |
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2 |
4 |
6 |
8 |
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VGS / V |
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Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
gfs / S |
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BUK 553-50A |
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10 |
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9 |
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8 |
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7 |
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6 |
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ID / A |
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Fig.8. Typical transconductance, Tj = 25 ˚C. gfs = f(ID); conditions: VDS = 25 V
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Normalised RDS(ON) = f(Tj) |
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Fig.9. Normalised drain-source on-state resistance. |
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a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 10 A; VGS = 5 V |
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VGS(TO) / V |
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max. |
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typ. |
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min. |
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Fig.10. |
Gate threshold voltage. |
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VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS |
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April 1993 |
4 |
Rev 1.100 |
ID / A |
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SUB-THRESHOLD CONDUCTION |
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1E-01 |
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1E-02 |
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1E-03 |
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2 % |
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98 % |
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1E-04 |
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1E-05 |
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1E-06 |
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VGS / V |
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Fig.11. Sub-threshold drain current. |
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ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS |
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C / pF |
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BUK5y3-50 |
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10000 |
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1000 |
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Ciss |
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Coss |
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Crss |
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VDS / V |
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Fig.12. |
Typical capacitances, Ciss, Coss, Crss. |
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C = f(VDS); conditions: VGS = 0 V; f = 1 MHz |
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VGS / V |
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BUK553-60 |
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VDS / V = 12 |
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48 |
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QG / nC |
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Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 20 A; parameter VDS
IF / A |
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BUK553-50A |
50 |
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Tj / C = 150 |
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VSDS / V |
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Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
WDSS% |
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120 |
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110 |
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10 |
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Ths / |
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Fig.15. Normalised avalanche energy rating. |
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WDSS% = f(Ths); conditions: ID = 20 A |
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+ VDD
L
VDS
-
VGS
-ID/100
0 |
T.U.T. |
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RGS
R 01 shunt
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 × LID2 × BVDSS/(BVDSS - VDD)
Απριλ 1993 |
5 |
Ρεϖ 1.100 |
Dimensions in mm Net Mass: 2 g
10.2 |
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max |
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5.7 |
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max |
0.9 |
3.2 |
0.5 |
3.0 |
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4.4
4.0
seating plane
3.5 max |
4.4 |
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not tinned |
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13.5 min
1 2 3
0.4 M 
0.9 0.7
2.54
5.08
top view
4.4 max
2.9 max
7.9
7.5
17 max
0.55 max
1.3
Fig.17. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1.Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide.
2.Accessories supplied on request: refer to mounting instructions for F-pack envelopes.
3.Epoxy meets UL94 V0 at 1/8".
April 1993 |
6 |
Rev 1.100 |
© Πηιλιπσ Ελεχτρονιχσ Ν.ς. 1995
Αλλ ριγητσ αρε ρεσερϖεδ. Ρεπροδυχτιον ιν ωηολε ορ ιν παρτ ισ προηιβιτεδ ωιτηουτ τηε πριορ ωριττεν χονσεντ οφ τηε χοπψριγητ οωνερ.
Τηε ινφορματιον πρεσεντεδ ιν τηισ δοχυμεντ δοεσ νοτ φορμ παρτ οφ ανψ θυοτατιον ορ χοντραχτ, ιτ ισ βελιεϖεδ το βε αχχυρατε ανδ ρελιαβλε ανδ μαψ βε χηανγεδ ωιτηουτ νοτιχε. Νο λιαβιλιτψ ωιλλ βε αχχεπτεδ βψ τηε πυβλισηερ φορ ανψ χονσεθυενχε οφ ιτσ υσε. Πυβλιχατιον τηερεοφ δοεσ νοτ χονϖεψ νορ ιμπλψ ανψ λιχενσε υνδερ πατεντ ορ οτηερ ινδυστριαλ ορ ιντελλεχτυαλ προπερτψ ριγητσ.
ΛΙΦΕ ΣΥΠΠΟΡΤ ΑΠΠΛΙΧΑΤΙΟΝΣ
Τηεσε προδυχτσ αρε νοτ δεσιγνεδ φορ υσε ιν λιφε συππορτ αππλιανχεσ, δεϖιχεσ ορ σψστεμσ ωηερε μαλφυνχτιον οφ τηεσε προδυχτσ χαν βε ρεασοναβλψ εξπεχτεδ το ρεσυλτ ιν περσοναλ ινϕυρψ. Πηιλιπσ χυστομερσ υσινγ ορ σελλινγ τηεσε προδυχτσ φορ υσε ιν συχη αππλιχατιονσ δο σο ατ τηειρ οων ρισκ ανδ αγρεε το φυλλψ ινδεμνιφψ Πηιλιπσ φορ ανψ δαμαγεσ ρεσυλτινγ φρομ συχη ιμπροπερ υσε ορ σαλε.
Απριλ 1993 |
7 |
Ρεϖ 1.100 |