DISCRETE SEMICONDUCTORS
M3D176
BB119
Variable capacitance diode
Product specification |
1996 May 03 |
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
Philips Semiconductors |
Product specification |
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Variable capacitance diode |
BB119 |
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FEATURES
∙Hermetically sealed leaded glass SOD27 (DO-35) package
∙C10: 17 pF; ratio: 1.3.
APPLICATIONS
∙ Automatic frequency control.
DESCRIPTION
The BB119 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package.
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
k |
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handbook, halfpage |
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MAM238
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
MIN. |
MAX. |
UNIT |
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VR |
continuous reverse voltage |
− |
15 |
V |
IF |
continuous forward current |
− |
200 |
mA |
Tstg |
storage temperature |
−55 |
+150 |
°C |
Tj |
operating junction temperature |
− |
150 |
°C |
SYMBOL |
PARAMETER |
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CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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IR |
reverse current |
VR = 15 |
V; see Fig.3 |
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− |
50 |
nA |
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VR = 15 |
V; Tj = 150 °C; see Fig.3 |
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2 |
μA |
rs |
diode series resistance |
f = 200 MHz; note 1 |
− |
0.2 |
1.5 |
Ω |
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Cd |
diode capacitance |
VR = 4 V; f = 1 MHz; see Figs 2 and 4 |
20 |
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25 |
pF |
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VR = 10 |
V; f = 1 MHz; see Figs 2 and 4 |
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17 |
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pF |
Cd (4V) |
capacitance ratio |
f = 1 MHz |
1.3 |
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Cd (10V) |
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Note |
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1. VR = 4 V. |
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1996 May 03 |
2 |
Philips Semiconductors |
Product specification |
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Variable capacitance diode |
BB119 |
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GRAPHICAL DATA
MBH194
40 handbook, full pagewidth
Cd (pF)
30
20
10
0 |
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10−1 |
1 |
VR (V) |
10 |
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f = 1 MHz.
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
MBH193
104 handbook, halfpage
IR (nA)
103
102
10
0 |
50 |
100 T |
j |
(oC) 150 |
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Fig.3 Reverse current as a function of junction temperature; maximum values.
MLC815
10 3 handbook, halfpage
TC d (K−1)
10 4
10 5 |
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102 |
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10 1 |
1 |
10 |
VR (V) |
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Fig.4 Temperature coefficient of diode capacitance as a function of reverse voltage; typical values.
1996 May 03 |
3 |
Philips Semiconductors |
Product specification |
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Variable capacitance diode |
BB119 |
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PACKAGE OUTLINE |
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0.56 |
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max |
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1.85 |
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25.4 min |
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4.25 |
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25.4 min |
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MLA428 - 1 |
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max |
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Dimensions in mm. |
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Fig.5 SOD27 (DO-35). |
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DEFINITIONS |
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Data sheet status |
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Objective specification |
This data sheet contains target or goal specifications for product development. |
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Preliminary specification |
This data sheet contains preliminary data; supplementary data may be published later. |
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Product specification |
This data sheet contains final product specifications. |
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Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 May 03 |
4 |