DISCRETE SEMICONDUCTORS
lfpage
M3D053
BB112
AM variable capacitance diode
Product specification |
1996 May 03 |
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
Philips Semiconductors |
Product specification |
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AM variable capacitance diode |
BB112 |
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FEATURES
∙Matched to 3%
∙Leaded plastic package
∙C8.5: 23 pF; ratio: 21.
APPLICATIONS
∙Electronic tuning in AM radio applications
∙VCO.
DESCRIPTION
The BB112 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD69 (TO-92 variant) leaded plastic package.
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
handbook, halfpage |
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MAM222 |
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Fig.1 Simplified outline (SOD69; TO-92 variant) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
MIN. |
MAX. |
UNIT |
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VR |
continuous reverse voltage |
− |
12 |
V |
IF |
continuous forward current |
− |
50 |
mA |
Tstg |
storage temperature |
−55 |
+125 |
°C |
Tj |
operating junction temperature |
−55 |
+85 |
°C |
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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IR |
reverse current |
VR = 12 V; see Fig.3 |
− |
− |
50 |
nA |
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VR = 12 V; Tj = 85 °C; see Fig.3 |
− |
− |
300 |
nA |
rs |
diode series resistance |
f = 500 kHz; note 1 |
− |
− |
1.5 |
Ω |
Cd |
diode capacitance |
VR = 1 V; f = 1 MHz; see Figs 2 and 4 |
440 |
− |
540 |
pF |
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VR = 8.5 V; f = 1 MHz; see Figs 2 and 4 |
17 |
− |
29 |
pF |
Cd (1V) |
capacitance ratio |
f = 1 MHz |
− |
18 |
− |
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Cd (8.5V) |
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Cd |
capacitance matching |
VR = 1 to 9 V; note 2 |
− |
− |
3 |
% |
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Cd |
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Notes |
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1.VR = 1 V.
2.For a set of 3 diodes.
1996 May 03 |
2 |
Philips Semiconductors |
Product specification |
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AM variable capacitance diode |
BB112 |
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GRAPHICAL DATA |
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750 |
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MGC808 |
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handbook, full pagewidth
Cd (pF)
500
250
0 |
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−1 |
1 |
10 |
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10 |
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VR |
(V) |
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f = 1 MHz. |
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Fig.2 |
Diode capacitance as a function of reverse voltage; typical values. |
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MGC809
103 handbook, halfpage
IR (nA)
102
10 |
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0 |
20 |
40 |
60 |
80 |
100 |
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Tj (oC) |
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Fig.3 Reverse current as a function of junction temperature; maximum values.
MLC815
10 3 handbook, halfpage
TC d (K−1)
10 4
10 5 |
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102 |
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10 1 |
1 |
10 |
VR (V) |
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Fig.4 Temperature coefficient of diode capacitance as a function of reverse voltage; typical values.
1996 May 03 |
3 |
Philips Semiconductors |
Product specification |
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AM variable capacitance diode |
BB112 |
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PACKAGE OUTLINE |
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0.40 |
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min |
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4.2 max |
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1.6 |
5.2 max |
12.7 min |
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0.49 |
4.8 |
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max |
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2.54 |
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max |
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a |
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MBC879 |
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0.67 |
dimensions within 2.5 max |
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max |
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uncontrolled |
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Dimensions in mm.
Fig.5 SOD69 (TO-92 variant).
DEFINITIONS
Data sheet status
Objective specification |
This data sheet contains target or goal specifications for product development. |
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Preliminary specification |
This data sheet contains preliminary data; supplementary data may be published later. |
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Product specification |
This data sheet contains final product specifications. |
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Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 May 03 |
4 |