DISCRETE SEMICONDUCTORS
ook, halfpage
M3D088
BAV170
Low-leakage double diode
Product specification |
1996 Mar 13 |
Supersedes data of June 1994
File under Discrete Semiconductors, SC01
Philips Semiconductors |
Product specification |
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Low-leakage double diode |
BAV170 |
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FEATURES
∙Plastic SMD package
∙Low leakage current: typ. 3 pA
∙Switching time: typ. 0.8 μs
∙Continuous reverse voltage: max. 75 V
∙Repetitive peak reverse voltage: max. 85 V
∙Repetitive peak forward current: max. 500 mA.
APPLICATION
∙Low-leakage current applications in surface mounted circuits.
DESCRIPTION
Epitaxial, medium-speed switching, double diode in a small plastic SOT23 SMD package. The diodes are in common cathode configuration.
LIMITING VALUES
PINNING
PIN |
DESCRIPTION |
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1 |
anode |
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2 |
anode |
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3 |
common cathode |
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handbook, 4 columns |
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1 |
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2 
1
3
3
Top view |
MAM108 |
Marking code: JXp.
Fig.1 Simplified outline (SOT23) and symbol.
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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Per diode |
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VRRM |
repetitive peak reverse voltage |
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85 |
V |
VR |
continuous reverse voltage |
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75 |
V |
IF |
continuous forward current |
single diode loaded; see Fig.2; note 1 |
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215 |
mA |
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double diode loaded; see Fig.2; note 1 |
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125 |
mA |
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IFRM |
repetitive peak forward current |
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500 |
mA |
IFSM |
non-repetitive peak forward current |
square wave; Tj = 25 °C prior to surge; |
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see Fig.4 |
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tp = 1 μs |
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4 |
A |
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tp = 1 ms |
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1 |
A |
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tp = 1 s |
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0.5 |
A |
Ptot |
total power dissipation |
Tamb = 25 °C; note 1 |
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250 |
mW |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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150 |
°C |
Note
1. Device mounted on a FR4 printed-circuit board.
1996 Mar 13 |
2 |
Philips Semiconductors |
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Product specification |
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Low-leakage double diode |
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BAV170 |
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ELECTRICAL CHARACTERISTICS |
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Tj = 25 °C unless otherwise specified. |
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SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
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MAX. |
UNIT |
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Per diode |
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VF |
forward voltage |
see Fig.3 |
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IF = 1 mA |
− |
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900 |
mV |
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IF = 10 mA |
− |
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1000 |
mV |
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IF = 50 mA |
− |
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1100 |
mV |
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IF = 150 mA |
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1250 |
mV |
IR |
reverse current |
see Fig.5 |
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VR = 75 V |
0.003 |
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nA |
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VR = 75 V; Tj = 150 °C |
3 |
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80 |
nA |
Cd |
diode capacitance |
f = 1 MHz; VR = 0; see Fig.6 |
2 |
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pF |
trr |
reverse recovery time |
when switched from IF = 10 mA to |
0.8 |
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3 |
μs |
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IR = 10 mA; RL = 100 Ω; |
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measured at IR = 1 mA; see Fig.7 |
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THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
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CONDITIONS |
VALUE |
UNIT |
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Rth j-tp |
thermal resistance from junction to tie-point |
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360 |
K/W |
Rth j-a |
thermal resistance from junction to ambient |
note 1 |
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500 |
K/W |
Note
1. Device mounted on a FR4 printed-circuit board.
1996 Mar 13 |
3 |
Philips Semiconductors |
Product specification |
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Low-leakage double diode |
BAV170 |
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GRAPHICAL DATA
MBG521
300 handbook, halfpage
IF (mA)
200
(1)
100
(2)
0
0 100 Tamb (oC) 200
Device mounted on a FR4 printed-circuit board.
(1)Single diode loaded.
(2)Double diode loaded.
Fig.2 Maximum permissible continuous forward current as a function of ambient temperature.
MLB752 - 1
300 handbook, halfpage
I F (mA)
200
(1) |
(2) |
(3) |
100
0
0 |
0.4 |
0.8 |
1.2 |
1.6 |
VF (V)
(1)Tj = 150 °C; typical values.
(2)Tj = 25 °C; typical values.
(3)Tj = 25 °C; maximum values.
Fig.3 Forward current as a function of forward voltage; per diode.
MBG704
102
IFSM
(A)
10
1
10−1
1 |
10 |
102 |
103 |
tp (μs) |
104 |
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Based on square wave currents; Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration per diode.
1996 Mar 13 |
4 |
Philips Semiconductors |
Product specification |
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Low-leakage double diode |
BAV170 |
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10 |
2 |
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MLB754 |
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MBG526 |
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handbook, halfpage |
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handbook, halfpage |
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I R |
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(nA) |
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Cd |
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10 |
(1) |
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(pF) |
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1 |
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1 |
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10 1 |
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10 2 |
(2) |
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10 3 |
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0 |
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VR (V) 20 |
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0 |
50 |
100 |
150 |
o |
200 |
0 |
5 |
10 |
15 |
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T j ( |
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C) |
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VR = 75 V. |
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(1) |
Maximum values. |
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(2) |
Typical values. |
f = 1 MHz; Tj = 25 °C. |
Fig.5 Reverse current as a function of junction |
Fig.6 Diode capacitance as a function of reverse |
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temperature; per diode. |
voltage; per diode; typical values. |
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t r |
t p |
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t |
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D.U.T. |
10% |
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R |
= 50 Ω |
IF |
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I F |
t rr |
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S |
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SAMPLING |
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t |
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OSCILLOSCOPE |
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V = VR |
IF x R S |
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R i = 50 Ω |
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90% |
(1) |
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VR |
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MGA881 |
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input signal |
output signal |
Fig.7 Reverse recovery time test circuit and waveforms.
1996 Mar 13 |
5 |
Philips Semiconductors |
Product specification |
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Low-leakage double diode |
BAV170 |
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PACKAGE OUTLINE |
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3.0 |
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k, full pagewidth |
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2.8 |
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1.9 |
B |
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0.150 |
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0.75 |
0.090 |
0.95 |
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A |
0.2 M A B |
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0.60 |
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2 |
1 |
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10o |
0.1 |
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max |
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1.4 |
2.5 |
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max |
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1.2 |
max |
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10o |
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max |
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3 |
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1.1 |
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0 |
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max |
30o |
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0.48 0.1 |
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0.1 M A B |
MBC846 |
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max |
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TOP VIEW |
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Dimensions in mm. |
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Fig.8 SOT23. |
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DEFINITIONS |
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Data Sheet Status |
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Objective specification |
This data sheet contains target or goal specifications for product development. |
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Preliminary specification |
This data sheet contains preliminary data; supplementary data may be published later. |
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Product specification |
This data sheet contains final product specifications. |
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Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Mar 13 |
6 |