DISCRETE SEMICONDUCTORS
book, halfpage
M3D088
BAS116
Low-leakage diode
Product specification |
1996 Mar 13 |
Supersedes data of June 1994
File under Discrete Semiconductors, SC01
Philips Semiconductors |
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Product specification |
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Low-leakage diode |
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BAS116 |
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FEATURES |
PINNING |
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∙ Plastic SMD package |
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PIN |
DESCRIPTION |
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∙ Low leakage current: typ. 3 pA |
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1 |
anode |
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∙ Switching time: typ. 0.8 μs |
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not connected |
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∙ Continuous reverse voltage: |
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cathode |
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max. 75 V |
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∙Repetitive peak reverse voltage: max. 85 V
∙Repetitive peak forward current: max. 500 mA.
APPLICATION
∙Low leakage current applications in surface mounted circuits.
DESCRIPTION
Epitaxial medium-speed switching diode with a low leakage current in a small plastic SOT23 SMD package.
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n.c. |
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Top view |
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MAM106 |
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Marking code: JVp.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VRRM |
repetitive peak reverse voltage |
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85 |
V |
VR |
continuous reverse voltage |
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75 |
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IF |
continuous forward current |
see Fig.2; note 1 |
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215 |
mA |
IFRM |
repetitive peak forward current |
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500 |
mA |
IFSM |
non-repetitive peak forward current |
square wave; Tj = 25 °C prior to surge; |
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see Fig.4 |
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tp = 1 μs |
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4 |
A |
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tp = 1 ms |
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1 |
A |
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tp = 1 s |
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0.5 |
A |
Ptot |
total power dissipation |
Tamb = 25 °C; note 1 |
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250 |
mW |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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150 |
°C |
Note
1. Device mounted on a FR4 printed-circuit board.
1996 Mar 13 |
2 |
Philips Semiconductors |
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Product specification |
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Low-leakage diode |
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BAS116 |
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ELECTRICAL CHARACTERISTICS |
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Tj = 25 °C unless otherwise specified. |
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SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
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MAX. |
UNIT |
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VF |
forward voltage |
see Fig.3 |
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IF = 1 mA |
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900 |
mV |
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IF = 10 mA |
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1000 |
mV |
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IF = 50 mA |
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1100 |
mV |
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IF = 150 mA |
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1250 |
mV |
IR |
reverse current |
see Fig.5 |
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VR = 75 V |
0.003 |
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5 |
nA |
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VR = 75 V; Tj = 150 °C |
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80 |
nA |
Cd |
diode capacitance |
f = 1 MHz; VR = 0; see Fig.6 |
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pF |
trr |
reverse recovery time |
when switched from IF = 10 mA to |
0.8 |
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μs |
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IR = 10 mA; RL = 100 Ω; |
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measured at IR = 1 mA; see Fig.7 |
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THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
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CONDITIONS |
VALUE |
UNIT |
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Rth j-tp |
thermal resistance from junction to tie-point |
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330 |
K/W |
Rth j-a |
thermal resistance from junction to ambient |
note 1 |
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500 |
K/W |
Note
1. Device mounted on a FR4 printed-circuit board.
1996 Mar 13 |
3 |
Philips Semiconductors |
Product specification |
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Low-leakage diode |
BAS116 |
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GRAPHICAL DATA |
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MLB755 |
300 |
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MLB752 - 1 |
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300 |
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handbook, halfpage |
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handbook, halfpage |
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I F |
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I F |
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(mA) |
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(mA) |
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200 |
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200 |
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(1) |
(2) |
(3) |
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100 |
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100 |
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0 |
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0 |
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0 |
100 |
Tamb ( oC) |
200 |
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0 |
0.4 |
0.8 |
1.2 |
1.6 |
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VF (V) |
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(1) |
Tj = 150 °C; typical values. |
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Device mounted on a FR4 printed-circuit board. |
(2) |
Tj |
= 25 |
°C; typical values. |
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(3) |
Tj = 25 |
°C; maximum values. |
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Fig.2 Maximum permissible continuous forward |
Fig.3 |
Forward current as a function of forward |
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current as a function of ambient temperature. |
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voltage. |
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MBG704
102
IFSM
(A)
10
1
10−1
1 |
10 |
102 |
103 |
tp (μs) |
104 |
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Based on square wave currents; Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Mar 13 |
4 |
Philips Semiconductors |
Product specification |
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Low-leakage diode |
BAS116 |
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10 |
2 |
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MLB754 |
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MBG526 |
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2 |
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handbook, halfpage |
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handbook, halfpage |
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I R |
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(nA) |
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Cd |
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10 |
(1) |
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(pF) |
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1 |
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1 |
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10 1 |
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10 2 |
(2) |
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10 3 |
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0 |
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VR (V) 20 |
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0 |
50 |
100 |
150 |
o |
200 |
0 |
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10 |
15 |
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T j ( |
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C) |
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VR = 75 V. |
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f = 1 MHz; Tj = 25 °C. |
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Fig.5 Reverse current as a function of junction |
Fig.6 Diode capacitance as a function of reverse |
temperature. |
voltage; typical values. |
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t r |
t p |
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t |
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D.U.T. |
10% |
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R |
= 50 Ω |
IF |
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I F |
t rr |
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SAMPLING |
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t |
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OSCILLOSCOPE |
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V = VR |
IF x R S |
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R i = 50 Ω |
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90% |
(1) |
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VR |
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MGA881 |
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input signal |
output signal |
Fig.7 Reverse recovery time test circuit and waveforms.
1996 Mar 13 |
5 |
Philips Semiconductors |
Product specification |
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Low-leakage diode |
BAS116 |
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PACKAGE OUTLINE |
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3.0 |
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k, full pagewidth |
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2.8 |
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1.9 |
B |
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0.150 |
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0.75 |
0.090 |
0.95 |
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A |
0.2 M A B |
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0.60 |
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2 |
1 |
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10o |
0.1 |
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max |
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1.4 |
2.5 |
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max |
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1.2 |
max |
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10o |
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max |
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3 |
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1.1 |
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0 |
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max |
30o |
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0.48 0.1 |
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0.1 M A B |
MBC846 |
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max |
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TOP VIEW |
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Dimensions in mm. |
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Fig.8 SOT23. |
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DEFINITIONS |
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Data Sheet Status |
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Objective specification |
This data sheet contains target or goal specifications for product development. |
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Preliminary specification |
This data sheet contains preliminary data; supplementary data may be published later. |
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Product specification |
This data sheet contains final product specifications. |
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Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Mar 13 |
6 |