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DISCRETE SEMICONDUCTORS

book, halfpage

M3D100

BDX35; BDX36; BDX37

NPN switching transistors

Product speciﬁcation

1997 Apr 16

Supersedes data of September 1994

File under Discrete Semiconductors, SC04

FEATURES

∙High current (max. 5 A)

∙Low voltage (max. 75 V).

APPLICATIONS

∙ High-current switching in power applications.

NPN switching transistor in a TO-126; SOT32 plastic package.

PIN					DESCRIPTION

1		emitter

2		collector, connected to the metal part of
		the mounting surface

3		base


handbook, halfpage
handbook, halfpage
						2
					3






						1



1		2	3	Top view		MAM254
Fig.1	Simplified outline (TO-126; SOT32)
	and symbol.

1997 Apr 16

Philips Semiconductors							Product speciﬁcation

NPN switching transistors				BDX35; BDX36; BDX37

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER		CONDITIONS			MIN.		MAX.	UNIT

VCBO	collector-base voltage	open emitter
	BDX35				−			100	V
	BDX36; BDX37				−			120	V

VCEO	collector-emitter voltage	open base
	BDX35; BDX36				−			60	V
	BDX37				−			75	V

VEBO	emitter-base voltage	open collector			−			5	V
IC	collector current (DC)				−			5	A
ICM	peak collector current				−			10	A
IBM	peak base current				−			2	A
Ptot	total power dissipation	Tmb ≤ 75 °C			−			15	W
		Tamb ≤ 25 °C			−			1.25	W
Tstg	storage temperature				−65			+150	°C
Tj	junction temperature				−			150	°C
Tamb	operating ambient temperature				−65			+150	°C
THERMAL CHARACTERISTICS

SYMBOL	PARAMETER		CONDITIONS			VALUE			UNIT

Rth j-a	thermal resistance from junction to ambient		in free air			100			K/W
Rth j-mb	thermal resistance from junction to mounting base					5			K/W

Tj = 25 °C unless otherwise speciﬁed.

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT

ICBO	collector cut-off current
	BDX35	IE = 0; VCB = 80 V	−	−	100	nA
		IE = 0; VCB = 80 V; Tj = 100 °C	−	−	10	μA
ICBO	collector cut-off current
	BDX36; BDX37	IE = 0; VCB = 100 V	−	−	100	nA
		IE = 0; VCB = 100 V; Tj = 100 °C	−	−	10	μA
IEBO	emitter cut-off current	IC = 0; VEB = 5 V	−	−	100	nA
hFE	DC current gain	IC = 0.5 A; VCE = 10 V; see Fig.2
	BDX35; BDX36		45	130	450
	BDX37		45	80	450

VCEsat	collector-emitter saturation voltage	IC = 5 A; IB = 0.5 A	−	−	900	mV
VCEsat	collector-emitter saturation voltage
	BDX35; BDX37	IC = 7 A; IB = 0.7 A	−	−	1.2	V
	BDX36	IC = 10 A; IB = 1 A	−	−	2	V

1997 Apr 16

Philips Semiconductors				Product speciﬁcation

NPN switching transistors		BDX35; BDX36; BDX37


SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT

VBEsat	base-emitter saturation voltage	IC = 5 A; IB = 0.5 A	−	−	1.7	V
VBEsat	base-emitter saturation voltage
	BDX35; BDX37	IC = 7 A; IB = 0.7 A	−	−	2	V
	BDX36	IC = 10 A; IB = 1 A	−	−	2.5	V
Cc	collector capacitance	IE = ie = 0; VCB = 10 V; f = 1 MHz	−	40	60	pF
fT	transition frequency	IC = 0.5 A; VCE = 5 V; f = 100 MHz	−	100	−	MHz
Switching times (between 10% and 90% levels)

ton	turn-on time	ICon = 1 A; IBon = 0.1 A; IBoff = −0.1 A	−	60	100	ns
		ICon = 2 A; IBon = 0.2 A; IBoff = −0.2 A	−	−	80	ns
		ICon = 5 A; IBon = 0.5 A; IBoff = −0.5 A	−	180	300	ns
toff	turn-off time	ICon = 1 A; IBon = 0.1 A; IBoff = −0.1 A	−	600	800	ns
		ICon = 2 A; IBon = 0.2 A; IBoff = −0.2 A	−	450	700	ns
		ICon = 5 A; IBon = 0.5 A; IBoff = −0.5 A	−	350	500	ns