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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJE350/D

Plastic Medium Power PNP

Silicon Transistor

. . . designed for use in line±operated applications such as low power, line±operated series pass and switching regulators requiring PNP capability.

High Collector±Emitter Sustaining Voltage Ð

VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc

Excellent DC Current Gain Ð

hFE = 30±240 @ IC = 50 mAdc

Plastic Thermopad Package

MAXIMUM RATINGS

MJE350

0.5 AMPERE

POWER TRANSISTOR

PNP SILICON

300 VOLTS

20 WATTS

CASE 77±08

TO±225AA TYPE

Rating

Symbol

Value

Unit

 

 

 

 

Collector±Emitter Voltage

VCEO

300

Vdc

Emitter±Base Voltage

VEB

3.0

Vdc

Collector Current Ð Continuous

IC

500

mAdc

Total Power Dissipation @ TC = 25_C

PD

20

Watts

Derate above 25_C

 

0.16

W/_C

 

 

 

 

Operating and Storage Junction Temperature Range

TJ, Tstg

± 65 to +150

_C

THERMAL CHARACTERISTICS

Characteristic

 

Symbol

Max

 

Unit

 

 

 

 

 

 

 

Thermal Resistance, Junction to Case

 

θJC

6.25

 

_C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

 

 

 

 

 

Characteristic

 

Symbol

Min

 

Max

Unit

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

Collector±Emitter Sustaining Voltage

 

VCEO(sus)

300

 

Ð

Vdc

(IC = 1.0 mAdc, IB = 0)

 

 

 

 

 

 

Collector Cutoff Current

 

ICBO

Ð

 

100

μAdc

(VCB = 300 Vdc, IE = 0)

 

 

 

 

 

 

Emitter Cutoff Current

 

IEBO

Ð

 

100

μAdc

(VEB = 3.0 Vdc, IC = 0)

 

 

 

 

 

 

ON CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

 

hFE

30

 

240

Ð

(IC = 50 mAdc, VCE = 10 Vdc)

 

 

 

 

 

 

REV 7

Motorola, Inc. 1995

MJE350

 

 

 

 

 

 

 

 

 

 

200

TJ = 150°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GAIN

100

 

25°C

 

 

 

 

 

 

 

 

70

 

 

 

 

 

 

 

 

 

 

DC CURRENT

 

 

 

 

 

 

 

 

 

 

50

 

± 55°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

30

 

 

 

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

 

 

 

FE

 

 

 

 

 

 

 

 

 

 

 

h

20

 

 

VCE = 2.0 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC = 10 V

 

 

 

 

 

 

 

10

 

10

 

30

50

70

100

200

300

500

 

5.0

7.0

20

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

 

1000

 

 

 

 

 

 

 

 

700

 

 

 

100 μs

 

 

(mA)

500

 

 

 

 

 

 

 

 

 

 

 

 

300

 

dc

 

 

 

 

 

CURRENT

 

 

 

 

 

 

200

 

 

 

 

 

 

 

100

 

1.0 ms

 

 

 

 

 

, COLLECTOR

 

 

 

 

 

 

 

 

 

 

 

500 μs

 

70

 

 

 

 

 

 

 

 

 

 

 

 

 

50

 

TJ = 150°C

 

 

 

 

 

30

 

BONDING WIRE LIMITED

 

 

 

C

 

 

 

 

 

 

 

 

 

 

 

 

 

I

20

 

THERMALLY LIMITED @ TC = 25°C

 

 

 

 

 

 

 

 

 

 

 

SECOND BREAKDOWN LIMITED

 

 

 

 

10

30

50

70

100

200

300

400

 

20

 

 

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

 

Figure 3. Active±Region Safe Operating Area

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 3 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the limitations imposed by second breakdown.

 

1.0

 

 

 

 

 

 

 

 

 

 

 

TJ = 25°C

 

 

 

 

 

 

 

 

0.8

VBE(sat) @ IC/IB = 10

 

 

 

 

 

 

(VOLTS)

 

 

 

 

 

 

 

0.6

 

VBE @ VCE = 10 V

 

 

 

 

 

 

V, VOLTAGE

0.4

 

 

 

 

 

 

 

IC/IB = 10

 

 

 

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

 

 

 

VCE(sat)

 

 

 

 

 

IC/IB = 5.0

 

 

0

 

 

 

 

 

 

 

 

 

7.0

10

20

30

50

70

100

200 300

500

 

5.0

 

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

Figure 2. ªOnº Voltages

(mV/°C)

+ 1.2

 

 

 

 

 

 

 

 

 

+ 0.8

*APPLIES FOR IC/IB < hFE/4

 

 

+ 100°C to +150°C

 

+ 25°C to +100°C

 

 

+ 0.4

 

 

 

 

 

 

COEFFICIENTS

 

 

 

 

 

 

 

 

 

0

*θVC for VCE(sat)

 

 

 

 

 

 

± 0.4

 

 

 

± 55°C to +25°C

 

 

 

 

 

 

 

 

± 0.8

 

 

 

 

 

+ 25°C to +150°C

 

 

 

 

 

 

 

 

, TEMPERATURE

± 1.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

± 1.6

θVB for VBE

 

 

 

 

 

 

± 2.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

± 2.4

 

 

 

 

 

 

± 55°C to +25°C

 

V

 

 

 

 

 

 

 

 

 

 

θ

± 2.8

 

 

 

 

 

 

 

 

 

 

7.0

10

20

30

50

70

100

200 300

500

 

5.0

 

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

Figure 4. Temperature Coefficients

 

20

 

 

 

 

 

 

 

 

(WATTS)

16

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DISSIPATION

12

 

 

 

 

 

 

 

 

8.0

 

 

 

 

 

 

 

 

, POWER

 

 

 

 

 

 

 

 

4.0

 

 

 

 

 

 

 

 

D

 

 

 

 

 

 

 

 

 

P

 

 

 

 

 

 

 

 

 

 

0

20

40

60

80

100

120

140

160

 

0

 

 

 

TC, CASE TEMPERATURE (°C)

 

 

Figure 5. Power Derating

2

Motorola Bipolar Power Transistor Device Data

MJE350

PACKAGE DIMENSIONS

±B±

 

U

 

F

C

Q

 

 

M

 

 

±A±

 

 

 

1

2

3

 

H

 

K

 

 

 

 

V

J

G

R

S

0.25 (0.010) M A M B M

D 2 PL

 

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

 

INCHES

MILLIMETERS

DIM

MIN

MAX

MIN

MAX

A

0.425

0.435

10.80

11.04

B

0.295

0.305

7.50

7.74

C

0.095

0.105

2.42

2.66

D

0.020

0.026

0.51

0.66

F

0.115

0.130

2.93

3.30

G

0.094 BSC

2.39 BSC

H

0.050

0.095

1.27

2.41

J

0.015

0.025

0.39

0.63

K

0.575

0.655

14.61

16.63

M

5

TYP

5

TYP

Q

0.148

0.158

3.76

4.01

R

0.045

0.055

1.15

1.39

S

0.025

0.035

0.64

0.88

U

0.145

0.155

3.69

3.93

V

0.040

±±±

1.02

±±±

0.25 (0.010) M A M B M

STYLE 1:

 

 

PIN 1.

EMITTER

 

2.

COLLECTOR

 

3.

BASE

CASE 77±08

TO±225AA TYPE

ISSUE V

Motorola Bipolar Power Transistor Device Data

3

MJE350

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447

6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315

MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design±NET.com

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

MJE350/D

*MJE350/D*

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