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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJE18009/D

Designer's Data Sheet

SWITCHMODE NPN Silicon

Planar Power Transistor

The MJE/MJF18009 has an application specific state±of±the±art die designed for use in 220 V line±operated Switchmode Power supplies and electronic ballast (ªlight ballastº). These high voltage/high speed transistors exhibit the following main features:

•Improved Efficiency Due to Low Base Drive Requirements:

ÐHigh and Flat DC Current Gain h FE

ÐFast Switching

ÐNo Coil Required in Base Circuit for Turn±Off (No Current Tail)

•Full Characterization at 125_C

•Motorola ª6 SIGMAº Philosophy Provides Tight and Reproducible Parametric Distributions

•Specified Dynamic Saturation Data

•Two Package Choices: Standard TO±220 or Isolated TO±220

MAXIMUM RATINGS

Rating		Symbol	MJE18009	MJF18009	Unit

Collector±Emitter Sustaining Voltage		VCEO	450		Vdc
Collector±Emitter Breakdown Voltage		VCES	1000		Vdc
Collector±Base Breakdown Voltage		VCBO	1000		Vdc
Emitter±Base Voltage		VEBO	9		Vdc
Collector Current Ð Continuous		IC	10		Adc
Ð Peak (1)		ICM	20
Base Current Ð Continuous		IB	4		Adc
Ð Peak (1)		IBM	8
*Total Device Dissipation @ TC = 25°C		PD	150	50	Watt
*Derate above 25_C			1.2	0.4	W/_C

Operating and Storage Temperature		TJ, Tstg	± 65 to 150		_C
RMS Isolation Voltage (2)	Per Figure 22	VISOL1		4500	V
(1s, 25°C, Humidity ≤ 30%)	Per Figure 23	VISOL2		3500
TC = 25°C	Per Figure 24	VISOL3		1500
THERMAL CHARACTERISTICS

Rating		Symbol	MJE18009	MJF18009	Unit

Thermal Resistance Ð Junction to Case		RqJC	0.83	2.5	_C/W
Ð Junction to Ambient		RqJA	62.5	62.5
Maximum Lead Temperature for Soldering		TL	260		_C
Purposes: 1/8″ from Case for 5 Seconds

(1)Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

(2)Proper strike and creepage distance must be provided.

MJE18009

MJF18009

POWER TRANSISTORS

10 AMPERES

1000 VOLTS

50 and 150 WATTS

CASE 221A±06

TO±220AB

CASE 221D±02

TO±220 FULLPACK

Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Designer's and SWITCHMODE are trademarks of Motorola, Inc.

Motorola, Inc. 1995

MJE18009

MJF18009

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector±Emitter Sustaining Voltage

VCEO(sus)

450

Vdc

(IC = 100 mA, L = 25 mH)

Collector Cutoff Current

ICEO

100

μAdc

(VCE = Rated VCEO, IB = 0)

Collector Cutoff Current (VCE = Rated VCES, VEB = 0)

@ TC = 25°C

ICES

100

μAdc

@ TC = 125°C

500

Collector Cutoff Current (VCE = 800 V, VEB = 0)

@ TC = 125°C

100

Emitter±Cutoff Current

IEBO

100

μAdc

(VEB = 9 Vdc, IC = 0)

ON CHARACTERISTICS

Base±Emitter Saturation Voltage

VBE(sat)

Vdc

(IC = 3 Adc, IB = 0.3 Adc)

0.8

1.1

(IC = 5 Adc, IB = 1 Adc)

0.9

1.15

(IC = 7 Adc, IB = 1.4 Adc)

0.9

1.25

Collector±Emitter Saturation Voltage

@ TC = 25°C

VCE(sat)

Vdc

(IC = 3 Adc, IB = 0.3 Adc)

0.3

0.6

@ TC = 125°C

0.3

0.65

(IC = 5 Adc, IB = 1 Adc)

@ TC = 25°C

0.3

0.6

@ TC = 125°C

0.3

0.65

(IC = 7 Adc, IB = 1.4 Adc)

@ TC = 25°C

0.35

0.7

@ TC = 125°C

0.4

0.9

DC Current Gain

@ TC = 25°C

hFE

(IC = 1.5 Adc, VCE = 5 Vdc)

@ TC = 125°C

(IC = 5 Adc, VCE = 1 Vdc)

@ TC = 25°C

@ TC = 125°C

11.5

(IC = 7 Adc, VCE = 1 Vdc)

@ TC = 25°C

@ TC = 125°C

7.5

(IC = 10 mAdc, VCE = 5 Vdc)

@ TC = 25°C

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth

MHz

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)

Output Capacitance

Cob

150

200

(VCB = 10 Vdc, IE = 0, f = 1 MHz)

Input Capacitance

Cib

2750

3500

(VEB = 8 Vdc)

DYNAMIC SATURATION VOLTAGE

= 3 Adc

@ 1 μs

@ TC = 25°C

VCE(dsat)

13.5

@ TC = 125 C

Dynamic Saturation

IB1 = 300 mAdc

@ 3 μs

@ TC = 25°C

Voltage:

VCC = 300 V

@ TC = 125°C

Determined 1 s and

3 μs respectively after

@ 1 μs

@ TC = 25°C

rising IB1 reaches

= 7 Adc

90% of final IB1

@ TC = 125 C

= 1.4 Adc

@ 3 μs

@ TC = 25°C

VCC = 300 V

@ TC = 125°C

2.7

2	Motorola Bipolar Power Transistor Device Data

MJE18009

MJF18009

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 μs)

Turn±on Time

= 3 Adc, I

= 0.3 Adc

@ TC = 25°C

ton

220

300

220

@ TC = 125 C

IB2 = 1.5 Adc

Turn±off Time

@ TC = 25°C

toff

1.28

2.5

μs

VCC = 300 Vdc

@ TC = 125°C

1.6

Turn±on Time

= 5 Adc, I

= 1 Adc

@ TC = 25°C

ton

120

250

350

@ TC = 125 C

IB2 = 2.5 Adc

Turn±off Time

@ TC = 25°C

toff

2.2

2.5

μs

VCC = 300 Vdc

@ TC = 125°C

2.6

Turn±on Time

= 7 Adc, I

= 1.4 Adc

@ TC = 25°C

ton

175

300

500

@ TC = 125 C

IB2 = 3.5 Adc

Turn±off Time

@ TC = 25°C

toff

1.75

2.5

μs

VCC = 300 Vdc

@ TC = 125°C

2.1

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 μH)

Fall Time

@ TC = 25°C

110

200

IC = 3 Adc

@ TC = 125°C

125

Storage Time

@ TC = 25°C

2.75

μs

IB1 = 0.3 Adc

@ TC = 125°C

2.6

IB2 = 1.5 Adc

Crossover Time

@ TC = 25°C

250

350

@ TC = 125°C

300

Fall Time

@ TC = 25°C

110

200

IC = 5 Adc

@ TC = 125°C

135

Storage Time

@ TC = 25°C

2.4

3.5

μs

IB1 = 1 Adc

@ TC = 125°C

3.1

IB2 = 2.5 Adc

Crossover Time

@ TC = 25°C

260

350

@ TC = 125°C

300

Fall Time

@ TC = 25°C

105

200

IC = 7 Adc

@ TC = 125°C

150

Storage Time

@ TC = 25°C

1.75

2.75

μs

IB1 = 1.4 Adc

@ TC = 125°C

2.25

IB2 = 3.5 Adc

Crossover Time

@ TC = 25°C

225

350

@ TC = 125°C

300

Motorola Bipolar Power Transistor Device Data

MJE18009 MJF18009

TYPICAL STATIC CHARACTERISTICS

	100
					VCE = 1 V
GAIN		TJ = 125°C
GAIN
CURRENT	10	TJ = ± 20°C
	10			TJ = 25°C
				TJ = 25°C
, DC
FE
h
	1			10
	0.01	0.1	1	10	100
		IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain @ 1 Volt

	2
				TJ = 25°C
(VOLTS)			8 A
(VOLTS)			5 A
			5 A
VOLTAGE,		3 A
VOLTAGE,	1
	1
CE		I = 1 A
V		C
	0
	0.01	0.1	1	10

IB, BASE CURRENT (mA)

Figure 3. Collector Saturation Region

	1.1
		IC/IB = 5
		IC/IB = 10
(VOLTS)	0.9
(VOLTS)	TJ = ± 20°C
, VOLTAGE	0.7
, VOLTAGE		TJ = 25°C
BE
V	0.5
	0.5
		TJ = 125°C
	0.3
	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 5. Base±Emitter Saturation Region

	100
					VCE = 5 V
GAIN		TJ = 25°C
GAIN		TJ = 125°C
, DC CURRENT		TJ = 125°C
	10

FE
h
	1			10
	0.01	0.1	1	10	100
		IC, COLLECTOR CURRENT (AMPS)

Figure 2. DC Current Gain @ 5 Volt

	10
,VOLTAGE (VOLTS)	1		IC/IB = 10
	1
	0.1
CE	0.1
CE
V
			TJ = 125°C
	IC/IB = 5		TJ = 25°C
	0.01
	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 4. Collector±Emitter Saturation Voltage

	10
		C	TJ = 25°C
		ib	f(test) = 1 MHz
			f(test) = 1 MHz
(pF)	1
CAPACITANCE	0.1		Cob
C,	0.1
C,
	0.01
	1	10	100

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Capacitance

4	Motorola Bipolar Power Transistor Device Data

MJE18009 MJF18009

TYPICAL SWITCHING CHARACTERISTICS

	2
		IBoff = IC/2	TJ = 125°C
		VCC = 300 V	TJ = 25°C
		PW = 20 μs
μs)
(
t, TIME	1	IC/IB = 10
		IC/IB = 10

	0			IC/IB = 5
	0
	1	4	7	10

IC, COLLECTOR CURRENT (AMPS)

	5
				IBoff = IC/2
	4			VCC = 300 V
	4			PW = 20 μs
			IC/IB = 5	PW = 20 μs
			IC/IB = 5
( μs)	3			IC/IB = 10
( μs)				IC/IB = 10
t, TIME	2
	1
		TJ = 125°C
	0	TJ = 25°C
	1	4	7	10

IC, COLLECTOR CURRENT (AMPS)

Figure 7. Resistive Switching, ton

Figure 8. Resistive Switching, toff

	5
								IBoff = IC/2
	4				IC/IB = 5			VCC = 15 V
								VZ = 300 V
								LC = 200 μH
t, TIME (ns)	3
t, TIME (ns)	2
	1		TJ = 125°C
			TJ = 125°C
	0		TJ = 25°C			IC/IB = 10
	0			4
	1	2	3	4	5	6	7	8	9	10
				IC, COLLECTOR CURRENT (AMPS)

	6			TJ = 125°C
				TJ = 125°C		IBoff = IC/2
	5			TJ = 25°C		VCC = 15 V
(μs)						VZ = 300 V
(μs)	4					LC = 200 μH
TIME	4				IC = 3 A
TIME					IC = 3 A
STORAGE	3
STORAGE	2
,	2
,
si
t
	1
		IC = 6.5 A
	0	5			11
	3	5	7	9	11	13	15

hFE, FORCED GAIN

Figure 9. Inductive Storage Time, tsi

Figure 10. Inductive Storage Time

	350				TJ = 125°C	300
					TJ = 125°C
	300				TJ = 25°C
	300		tc
			tc
						200
(ns)	250	IBoff = IC/2				(ns)
(ns)		VCC = 15 V				(ns)
t, TIME		VCC = 15 V				t, TIME
	200	VZ = 300 V
	200	LC = 200 μH
		LC = 200 μH				100
						100
	150		tfi
			tfi
	100		5			0
	1	3	5	7	9	11

IC, COLLECTOR CURRENT (AMPS)

							IBoff = IC/2
							VCC = 15 V
				tc			VZ	= 300 V
				tc			LC	μ
							LC	= 200	H
					tfi
		TJ = 125°C
		TJ = 25°C
1	2	3	4	5	6	7	8	9	10
			IC, COLLECTOR CURRENT (AMPS)

Figure 11. Inductive Switching,	Figure 12. Inductive Switching,
tc & tfi @ IC/IB = 5	tc & tfi @ IC/IB = 10

Motorola Bipolar Power Transistor Device Data

MJE18009 MJF18009

TYPICAL SWITCHING CHARACTERISTICS

	160										TJ = 125°C			400
						IC = 3 A					TJ = 125°C
	140										TJ = 25°C
	140												(ns)
													(ns)
TIME (ns)	120												TIME	300
TIME (ns)	100												TIME
FALL	100												CROSSOVER
FALL										IC = 6.5 A
,	80													200
fi
t
t		I	= I /2
													,
													c
		Boff	C										t
	60	VCC = 15 V
	60	VZ = 300 V
		VZ = 300 V
	40	LC = 200 μH												100
	3	4	5	6	7	8	9	10	11	12	13	14	15

hFE, FORCED GAIN

		IC = 3 A			IBoff = IC/2
					VCC = 15 V
					VZ = 300 V
					LC = 200 μH
			IC = 6.5 A
		TJ = 125°C
		TJ = 25°C
3	5	7	9	11	13	15
			hFE, FORCED GAIN

Figure 13. Inductive Fall Time

Figure 14. Inductive Crossover Time

TYPICAL CHARACTERISTICS

	100
(AMPS)	5 ms	1 ms	1 μs
(AMPS)	10		10 μs
CURRENT			EXTENDED
			SOA
	1
, COLLECTOR	1
	MJE18009±DC
	0.1

C
I	MJF18009±DC
	MJF18009±DC
	0.01	100
	10	100	1000
	VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

	12
(AMPS)				TC ≤ 125°C
				GAIN ≥	4
				LC = 500 μH
CURRENT	8
CURRENT
COLLECTOR	4
COLLECTOR				± 5 V
,
C
I
	0		0 V	±1.5 V
				±1.5 V
		500
	200	500		800	1100
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 15. Forward Bias Safe Operating Area	Figure 16. Reverse Bias Switching Safe
	Operating Area

	1.0
							SECOND
FACTOR	0.8						BREAKDOWN
							DERATING
	0.6
DERATING	0.6
DERATING	0.4
POWER	0.2				THERMAL
	0.2				DERATING
					DERATING
	0
	20	40	60	80	100	120	140	160
			TC, CASE TEMPERATURE (°C)

Figure 17. Forward Bias Power Derating

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC±VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 15 may be found at any case temperature by using the appropriate curve on Figure 17.

TJ(pk) may be calculated from the data in Figures 20 and 21. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn±off with the base±to±emitter junction reverse biased. The safe level is specified as a reverse±biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.

6	Motorola Bipolar Power Transistor Device Data

MJE18009 MJF18009

TYPICAL SWITCHING CHARACTERISTICS

(IB = IC/2 FOR ALL CURVES)

VCE	dyn 1 μs
	dyn 1 μs
		dyn 3 μs
0 V
90% IB
1	μs
IB	3	μs
	3	μs
		TIME

Figure 18. Dynamic Saturation

Voltage Measurements

10
9	IC					90% IC
8			tsi			tfi
7			tsi
7
6							10% IC
5	Vclamp		10% Vclamp			tc	10% IC
4						tc
4
3	IB	90% IB1
2
1
0
0	1	2	3	4	5	6	7	8
				TIME

Figure 19. Inductive Switching Measurements

					Table 1. Inductive Load Switching Drive Circuit
+15 V
1	μF			Ω		MTP8P10	100 μF				IC PEAK
			100				100 μF

	150 Ω
	150 Ω		3 W
	3 W		3 W							VCE PEAK
	3 W									VCE PEAK
	MPF930					MTP8P10	RB1	VCE
	MPF930					MUR105	RB1
						MUR105	Iout		IB1
+10 V	MPF930								IB1
+10 V	MPF930								IB
							A		IB
							A
	50 Ω					MJE210	RB2			IB2
							RB2

COMMON					150 Ω	MTP12N10		V(BR)CEO(sus)		Inductive Switching	RBSOA
						MTP12N10

	500	μ	F		3 W			L = 10 mH		L = 200 μH	L = 500 μH
	500		F					RB2 = ∞		RB2 = 0	RB2 = 0
								RB2 = ∞		RB2 = 0	RB2 = 0
							1 μF	VCC = 20 Volts		VCC = 15 Volts	VCC = 15 Volts
							1 μF	IC(pk)	= 100 mA	RB1 selected for	RB1 selected for
								IC(pk)	= 100 mA	RB1 selected for	RB1 selected for
±V										desired IB1	desired IB1
off

Motorola Bipolar Power Transistor Device Data

MJE18009 MJF18009

TYPICAL THERMAL RESPONSE (IB = IC/2 FOR ALL CURVES)

		1
TRANSIENT THERMAL RESISTANCE		D = 0.5
		0.2
	(NORMALIZED)	0.1			P(pk)	RθJC(t) = r(t) RθJC
		0.1			P(pk)	RθJC(t) = r(t) RθJC
		0.1				RθJC = 0.83°C/W MAX
		0.05				RθJC = 0.83°C/W MAX
						D CURVES APPLY FOR POWER
		0.02			t1	PULSE TRAIN SHOWN
		0.02				READ TIME AT t1
						READ TIME AT t1
					t2	TJ(pk) ± TC = P(pk) RθJC(t)
			SINGLE PULSE		DUTY CYCLE, D = t1/t2	TJ(pk) ± TC = P(pk) RθJC(t)
r(t),			SINGLE PULSE		DUTY CYCLE, D = t1/t2
		0.01
		0.01	0.1	1	10	100	1000

t, TIME (ms)

Figure 20. Typical Thermal Response (ZθJC(t)) for MJE18009

		1
TRANSIENT THERMAL RESISTANCE		D = 0.5
	(NORMALIZED)	0.2				P(pk)		RθJC(t) = r(t) RθJC
		0.1				P(pk)		RθJC(t) = r(t) RθJC
		0.1						°
		0.1						RθJC = 2.5 C/W MAX
								D CURVES APPLY FOR POWER
		0.05				t1		PULSE TRAIN SHOWN
		0.05				t1	t2	READ TIME AT t1
							t2	TJ(pk) ± TC = P(pk) RθJC(t)
						DUTY CYCLE, D = t1/t2		TJ(pk) ± TC = P(pk) RθJC(t)
r(t),		0.02				DUTY CYCLE, D = t1/t2
		0.02
			SINGLE PULSE
		0.01	SINGLE PULSE
		0.01
		0.01	0.1	1	10	100	1000	10000	100000

t, TIME (ms)

Figure 21. Typical Thermal Response (ZθJC(t)) for MJF18009

8	Motorola Bipolar Power Transistor Device Data

					MJE18009	MJF18009
		TEST CONDITIONS FOR ISOLATION TESTS*

	MOUNTED		MOUNTED		MOUNTED
CLIP	FULLY ISOLATED	CLIP	FULLY ISOLATED	0.107″ MIN	FULLY ISOLATED	0.107″ MIN
CLIP	PACKAGE	CLIP	PACKAGE		PACKAGE
	PACKAGE		PACKAGE		PACKAGE

LEADS	LEADS
HEATSINK	HEATSINK
0.110″ MIN

LEADS

HEATSINK

Figure 22. Clip Mounting Position for	Figure 23. Clip Mounting Position
Isolation Test Number 1	for Isolation Test Number 2

Figure 24. Screw Mounting Position

for Isolation Test Number 3

* Measurement made between leads and heatsink with all leads shorted together

MOUNTING INFORMATION**

4±40 SCREW

CLIP

PLAIN WASHER

HEATSINK
COMPRESSION WASHER
NUT	HEATSINK
NUT
Figure 25a. Screw±Mounted	Figure 25b. Clip±Mounted

Figure 25. Typical Mounting Techniques

for Isolated Package

Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions.

Destructive laboratory tests show that using a hex head 4±40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.

Additional tests on slotted 4±40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions.

** For more information about mounting power semiconductors see Application Note AN1040.

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

Motorola Bipolar Power Transistor Device Data

MJE18009	MJF18009
					PACKAGE DIMENSIONS
		B	F		±T±	PLANESEATING
				T	C
	4			T	S	NOTES:			INCHES		MILLIMETERS
						1. DIMENSIONING AND TOLERANCING PER ANSI	DIM	MIN		MAX	MIN	MAX
						Y14.5M, 1982.	DIM	MIN		MAX	MIN	MAX
Q			A			Y14.5M, 1982.	A	0.570		0.620	14.48	15.75
						2. CONTROLLING DIMENSION: INCH.	A	0.570		0.620	14.48	15.75
						2. CONTROLLING DIMENSION: INCH.	B	0.380		0.405	9.66	10.28
						3. DIMENSION Z DEFINES A ZONE WHERE ALL	B	0.380		0.405	9.66	10.28
						3. DIMENSION Z DEFINES A ZONE WHERE ALL	C	0.160		0.190	4.07	4.82
	1	2	3			BODY AND LEAD IRREGULARITIES ARE	C	0.160		0.190	4.07	4.82
H				U		ALLOWED.	D	0.025		0.035	0.64	0.88
H				U			F	0.142		0.147	3.61	3.73
			K				G	0.095		0.105	2.42	2.66
Z			K				H	0.110		0.155	2.80	3.93
Z							J	0.018		0.025	0.46	0.64
							K	0.500		0.562	12.70	14.27
							L	0.045		0.060	1.15	1.52
L							N	0.190		0.210	4.83	5.33
L							Q	0.100		0.120	2.54	3.04
V					R		Q	0.100		0.120	2.54	3.04
V					R		R	0.080		0.110	2.04	2.79
							R	0.080		0.110	2.04	2.79
					J		S	0.045		0.055	1.15	1.39
G					J		T	0.235		0.255	5.97	6.47
			D				U	0.000		0.050	0.00	1.27
			D				V	0.045		±±±	1.15	±±±
		N					Z		±±±	0.080	±±±	2.04
							STYLE 1:
							PIN 1.		BASE
								2.	COLLECTOR
								3.	EMITTER
								4.	COLLECTOR

					CASE 221A±06
					TO±220AB
						ISSUE Y
					±T±	SEATING
						PLANE
±B±					C		NOTES:
±B±					C
F							1.	DIMENSIONING AND TOLERANCING PER ANSI
					S			Y14.5M, 1982.
					S		2.	CONTROLLING DIMENSION: INCH.
Q							2.	CONTROLLING DIMENSION: INCH.
Q					U					INCHES		MILLIMETERS
					U					INCHES		MILLIMETERS
A								DIM		MIN	MAX	MIN	MAX
A								A	0.621		0.629	15.78	15.97
1	2	3						B	0.394		0.402	10.01	10.21
1	2	3						C	0.181		0.189	4.60	4.80
H								D	0.026		0.034	0.67	0.86
H		±Y±						F	0.121		0.129	3.08	3.27
K								F	0.121		0.129	3.08	3.27
K								G		0.100 BSC		2.54 BSC
								H	0.123		0.129	3.13	3.27
								J	0.018		0.025	0.46	0.64
		G						K	0.500		0.562	12.70	14.27
		G			J			L	0.045		0.060	1.14	1.52
		N			R			N		0.200 BSC		5.08 BSC
		N						Q	0.126		0.134	3.21	3.40
		L						Q	0.126		0.134	3.21	3.40
		L						R	0.107		0.111	2.72	2.81
		D 3 PL						S	0.096		0.104	2.44	2.64
		D 3 PL						U	0.259		0.267	6.58	6.78
								U	0.259		0.267	6.58	6.78
		0.25 (0.010) M	B	M	Y			STYLE 1:		GATE
								PIN 1.		GATE
									2.	DRAIN
									3.	SOURCE

			CASE 221D±02
			(ISOLATED TO±220 TYPE)
			UL RECOGNIZED: FILE #E69369
			ISSUE D

	How to reach us:
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