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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJH6282/D

Darlington Complementary

Silicon Power Transistors

. . . designed for general±purpose amplifier and low±speed switching motor control applications.

Similar to the Popular NPN 2N6282, 2N6283, 2N6284 and the PNP 2N6285, 2N6286, 2N6287

Rugged RBSOA Characteristics

Monolithic Construction with Built±in Collector±Emitter Diode

MAXIMUM RATINGS

 

 

MJH6282

MJH6283

MJH6284

 

Rating

Symbol

MJH6285

MJH6286

MJH6287

Unit

 

 

 

 

 

 

Collector±Emitter Voltage

VCEO

60

80

100

Vdc

Collector±Base Voltage

VCB

60

80

100

Vdc

Emitter±Base Voltage

VEB

 

5.0

 

Vdc

Collector Current Ð Continuous

IC

 

20

 

Adc

Peak

 

 

40

 

 

 

 

 

 

 

 

Base Current

IB

 

0.5

 

Adc

Total Device Dissipation @

PD

 

 

 

Watts

TC = 25_C

 

 

160

 

 

Derate above 25_C

 

 

1.28

 

_

 

 

 

 

W/ C

Operating and Storage Junction

TJ, Tstg

 

± 65 to +150

 

_C

Temperature Range

 

 

 

 

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS

Characteristic

 

 

 

 

Symbol

 

 

Max

 

 

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Thermal Resistance, Junction to Case

 

 

 

RθJC

 

 

 

 

0.78

 

 

_C/W

 

 

 

 

160

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(WATTS)

140

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

120

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DISSIPATION

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

80

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

POWER,

60

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

40

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

P

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

25

50

75

100

125

150

175

200

 

 

 

 

 

 

TC, CASE TEMPERATURE (°C)

 

 

 

 

 

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

NPN

MJH6282 MJH6283*

MJH6284*

PNP

MJH6285 MJH6286* MJH6287*

*Motorola Preferred Device

DARLINGTON

20 AMPERE

COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80, 100 VOLTS

160 WATTS

CASE 340D±01

Motorola, Inc. 1995

MJH6282

MJH6283

MJH6284

MJH6285

MJH6286

MJH6287

 

 

 

 

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

 

 

Symbol

Min

Max

Unit

 

 

 

 

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector±Emitter Sustaining Voltage

 

 

 

VCEO(sus)

 

 

Vdc

 

(IC = 0.1 Adc, IB = 0)

 

MJH6282, MJH6285

 

 

60

Ð

 

 

 

 

 

 

MJH6283, MJH6286

 

 

80

Ð

 

 

 

 

 

 

MJH6284, MJH6287

 

 

100

Ð

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector Cutoff Current

 

 

 

 

ICEO

 

 

mAdc

 

(VCE = 30 Vdc, IB = 0)

 

MJH6282, MJH6285

 

 

Ð

1.0

 

 

(VCE = 40 Vdc, IB = 0)

 

MJH6283, MJH6286

 

 

Ð

1.0

 

 

(VCE = 50 Vdc, IB = 0)

 

MJH6284, MJH6287

 

 

Ð

1.0

 

 

Collector Cutoff Current

 

 

 

 

ICEX

 

 

mAdc

 

 

 

 

 

 

 

 

(VCE = Rated VCB, VBE(off) = 1.5 Vdc)

 

 

 

 

Ð

0.5

 

 

(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C)

 

 

 

Ð

5.0

 

 

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

 

 

 

IEBO

Ð

2.0

mAdc

 

ON CHARACTERISTICS (1)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain (IC = 10 Adc, VCE = 3.0 Vdc)

 

 

 

hFE

750

18,000

Ð

 

DC Current Gain (IC = 20 Adc, VCE = 3.0 Vdc)

 

 

 

 

100

Ð

 

 

Collector±Emitter Saturation Voltage (IC = 10 Adc, IB = 40 mAdc)

 

VCE(sat)

Ð

2.0

Vdc

 

Collector±Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc)

 

 

Ð

3.0

 

 

Base±Emitter On Voltage (IC = 10 Adc, VCE = 3.0 Vdc)

 

 

VBE(on)

Ð

2.8

Vdc

 

 

 

 

Base±Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc)

 

 

VBE(sat)

Ð

4.0

Vdc

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Current±Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

 

fT

4.0

Ð

MHz

 

Output Capacitance

 

 

 

 

Cob

 

 

pF

 

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

 

MJH6282, 83, 84

 

 

Ð

400

 

 

 

 

 

 

 

MJH6285, 86, 87

 

 

Ð

600

 

 

 

 

 

 

 

 

 

 

Small±Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)

 

hfe

300

Ð

Ð

 

SWITCHING CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Typical

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Resistive Load

 

 

Symbol

NPN

PNP

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

Delay Time

 

 

 

 

 

 

td

0.1

0.1

μs

 

Rise Time

 

VCC = 30 Vdc, IC = 10 Adc

 

 

tr

0.3

0.3

 

 

 

 

IB1 = IB2 = 100 mA

 

 

 

 

 

 

 

 

Storage Time

 

 

 

 

ts

1.0

1.0

 

 

 

Duty Cycle = 1.0%

 

 

 

 

 

Fall Time

 

 

 

 

 

 

tf

3.5

2.0

 

(1) Pulse test: Pulse Width = 300 μs, Duty Cycle = 2.0%.

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

VCC

 

 

D1, MUST BE FAST RECOVERY TYPES, e.g.:

 

 

± 30 V

 

 

1N5825 USED ABOVE IB 100 mA

 

 

 

 

MSD6100 USED BELOW IB 100 mA

 

R

SCOPE

 

 

C

 

TUT

 

 

 

 

 

 

 

V2

 

RB

 

APPROX

 

 

BASE

+12 V

 

8.0 k

50

0

51

D1

 

V1

 

 

 

APPROX

 

+ 4.0 V

 

± 8.0 V

 

 

25 μs

 

 

tr, tf, 10 ns

for td and tr, D1 is disconnected

DUTY CYCLE = 1.0%

and V2 = 0

NPN

 

PNP

 

MJH6282

 

MJH6285

 

MJH6283

COLLECTOR

MJH6286

COLLECTOR

MJH6284

 

MJH6287

 

 

 

BASE

 

EMITTER

EMITTER

For NPN test circuit reverse diode and voltage polarities.

Figure 2. Switching Times Test Circuit

Figure 3. Darlington Schematic

2

Motorola Bipolar Power Transistor Device Data

 

 

 

 

 

 

 

 

MJH6282

MJH6283

MJH6284

 

MJH6285

MJH6286

MJH6287

 

 

1.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

EFFECTIVE TRANSIENT THERMAL

 

0.7

D = 0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RESISTANCE (NORMALIZED)

0.3

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2

0.1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

P(pk)

 

 

 

 

0.1

0.05

 

 

 

 

 

 

 

 

RθJC(t) = r(t) RθJC

 

 

 

 

 

 

 

0.07

0.02

 

 

 

 

 

 

 

 

RθJC = 0.78°C/W MAX

 

 

 

 

 

 

 

0.05

 

 

 

 

 

 

 

 

D CURVES APPLY FOR POWER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PULSE TRAIN SHOWN

 

 

t1

 

 

 

 

0.03

 

 

0.01

 

 

 

 

 

 

 

 

t2

 

 

 

 

 

 

 

 

 

 

 

READ TIME AT t1

 

 

 

 

 

 

 

0.02

SINGLE PULSE

 

 

 

 

 

 

TJ(pk) ± TC = P(pk) RθJC(t)

 

 

 

 

 

 

 

r(t),

 

 

 

 

 

 

 

 

 

DUTY CYCLE, D = t1/t2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.01

0.02

0.03

0.05

0.1

0.2

0.3

0.5

1.0

2.0

3.0

5.0

10

20

30

50

100

200

300

500

1000

 

 

0.01

t, TIME (ms)

Figure 4. Thermal Response

FBSOA, FORWARD BIAS SAFE OPERATING AREA

 

50

 

 

 

 

 

(AMPS)

20

0.1 ms

 

 

 

 

 

 

 

 

 

10

0.5 ms

 

 

 

 

1.0 ms

 

 

 

CURRENT

5.0

 

 

 

5.0 ms

 

 

 

 

 

 

 

2.0

 

 

dc

 

 

COLLECTOR

1.0

TJ = 150°C

 

 

 

 

 

 

 

0.5

SECOND BREAKDOWN LIMIT

 

 

 

BONDING WIRE LIMITED

 

 

0.2

THERMAL LIMITATION

 

 

,

 

 

 

°

 

 

 

C

 

 

 

 

 

@ TC = 25 C

 

 

 

I

 

SINGLE PULSE

 

 

 

 

0.1

 

 

 

 

 

 

 

 

 

 

0.05

5.0

10

20

50

100

 

2.0

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

 

50

 

 

 

 

 

(AMPS)

20

0.1 ms

 

 

 

 

 

 

 

 

 

10

0.5 ms

 

 

 

 

1.0 ms

 

 

 

CURRENT

5.0

 

 

 

5.0 ms

 

 

 

 

 

 

 

2.0

 

dc

 

 

 

COLLECTOR

1.0

TJ = 150°C

 

 

 

 

 

 

 

0.5

SECOND BREAKDOWN LIMIT

 

 

 

BONDING WIRE LIMITED

 

 

0.2

THERMAL LIMITATION

 

 

,

 

 

 

°

 

 

 

C

 

 

 

 

 

@ TC = 25 C

 

 

 

I

 

SINGLE PULSE

 

 

 

 

0.1

 

 

 

 

 

 

 

 

 

 

0.05

5.0

10

20

50

100

 

2.0

 

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

 

 

50

 

 

 

 

 

(AMPS)

 

20

0.1 ms

 

 

 

 

 

0.5 ms

 

 

 

 

 

10

 

 

 

 

 

1.0 ms

 

 

 

CURRENT

 

5.0

 

 

 

 

5.0 ms

 

 

 

 

 

dc

 

 

 

2.0

 

 

 

 

COLLECTOR

 

1.0

TJ = 150°C

 

 

 

 

 

 

 

 

 

0.5

SECOND BREAKDOWN LIMIT

 

 

 

 

BONDING WIRE LIMITED

 

 

 

0.2

THERMAL LIMITATION

 

 

,

 

 

 

 

 

°

 

 

 

C

 

 

 

 

 

@ TC = 25 C

 

 

 

I

 

 

SINGLE PULSE

 

 

 

 

 

0.1

 

 

 

 

 

 

 

 

 

 

 

 

0.05

5.0

10

20

50

100

 

 

2.0

 

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

 

Figure 5. MJH6282, MJH6285

 

Figure 6. MJH6283, MJH6286

 

Figure 7. MJH6284, MJH6287

 

50

 

 

 

L = 200 μH

 

 

 

FORWARD BIAS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(AMPS)

 

 

 

 

IC/IB

100

 

 

 

There are two limitations on the power handling ability of a

40

 

 

 

TC = 25°C

 

 

 

transistor: average junction temperature and second break-

 

 

 

 

VBE(off) = 0 ± 5.0 V

 

 

down. Safe operating area curves indicate I

C

± V

limits of

 

 

 

 

 

 

 

CURRENT

 

 

 

 

RBE = 47 Ω

 

 

 

 

 

 

 

CE

 

30

 

 

 

 

 

 

the transistor that must be observed for reliable operation;

 

 

 

 

 

DUTY CYCLE = 10%

 

i.e., the transistor must not be subjected to greater dissipa-

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tion than the curves indicate.

 

 

 

,COLLECTOR

 

 

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

The data of Figure 5, 6 and 7 is based on TJ(pk) = 150_C;

 

 

MJH6282, 6285

 

 

 

 

 

TC is variable depending on conditions. Second breakdown

 

 

 

 

 

 

 

pulse limits are valid for duty cycles to 10% provided TJ(pk)

10

 

MJH6283, 6286

 

 

 

 

 

C

 

MJH6284, 6287

 

 

 

 

 

v 150 _C.

T

J(pk)

may be calculated from the data in

I

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Figure 4. At high case temperatures, thermal limitations will

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

reduce the power that can be handled to values less than the

 

10

20

30

40

60

80

100

110

limitations imposed by second breakdown.

 

 

 

 

0

 

 

 

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 8. Maximum RBSOA, Reverse Bias

Safe Operating Area

Motorola Bipolar Power Transistor Device Data

3

MJH6282

MJH6283

MJH6284

 

MJH6285

 

MJH6286

MJH6287

 

 

 

 

 

 

 

 

 

 

 

 

 

NPN

 

 

 

 

 

 

 

 

 

 

 

PNP

 

 

 

 

 

 

3000

 

 

 

 

 

 

 

 

 

 

 

5000

 

 

 

 

 

 

 

 

 

 

 

 

 

V

 

= 3.0 V

 

 

 

 

 

 

 

 

 

VCE = 3.0 V

 

 

 

 

 

 

 

 

2000

 

CE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3000

 

°

 

 

 

 

 

 

 

 

GAIN

 

TJ = 150°C

 

 

 

 

 

 

 

 

GAIN

 

TJ = 150 C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1000

 

 

 

 

 

 

 

 

 

 

2000

 

 

25°C

 

 

 

 

 

 

CURRENT

 

 

 

 

 

 

 

 

 

 

CURRENT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

500

 

 

 

 

 

 

 

 

 

 

1000

 

 

 

 

 

 

 

 

 

 

, DC

 

 

 

 

 

 

 

 

 

 

, DC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

700

 

 

± 55°C

 

 

 

 

 

 

FE

300

 

 

 

 

 

 

 

 

 

 

FE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

h

 

 

 

 

 

 

 

 

 

 

h

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

± 55°C

 

 

 

 

 

 

 

500

 

 

 

 

 

 

 

 

 

 

 

200

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

150

 

 

 

 

 

 

 

 

 

 

 

300

 

 

 

 

 

 

 

 

 

 

 

0.2

0.3

0.5

 

1.0

2.0

3.0

5.0

7.0

10

20

 

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

20

 

 

 

 

IC, COLLECTOR CURRENT (AMPS)

 

 

 

 

 

 

IC, COLLECTOR CURRENT (AMPS)

 

 

Figure 9. DC Current Gain

(VOLTS)

2.8

 

 

 

 

 

 

 

 

(VOLTS)

2.8

 

 

 

 

 

 

 

 

 

2.6

 

 

 

 

 

 

 

 

2.6

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VOLTAGE

2.4

 

 

 

 

 

 

TJ = 25°C

VOLTAGE

2.4

 

 

 

 

 

 

 

 

 

2.2

 

 

 

 

 

 

 

 

2.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

COLLECTOR±EMITTER,

2.0

 

 

 

 

 

 

 

 

COLLECTOR±EMITTER,

2.0

 

 

 

 

 

IC = 5.0 A

 

 

1.8

 

 

 

 

 

 

 

 

1.8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = 15 A

 

 

1.6

 

 

 

 

 

 

IC = 15 A

 

1.6

 

 

 

 

 

 

 

 

 

 

1.4

 

 

 

 

 

 

 

 

 

1.4

 

 

 

 

 

IC = 10 A

 

 

 

1.2

 

 

 

 

 

 

IC = 10 A

 

1.2

 

 

 

 

 

 

 

 

 

CE

1.0

 

 

 

 

IC = 5.0 A

 

 

CE

1.0

 

 

 

 

 

 

 

 

 

0.8

 

 

 

 

 

 

 

 

0.8

 

 

 

 

 

 

 

 

 

V

2.0 3.0

5.0

10

20 30

50

100

200 300

500

V

2.0 3.0

5.0

10

20 30

50

100

200 300

500

1000

 

1.0

1000

1.0

 

 

 

 

IB, BASE CURRENT (mA)

 

 

 

 

 

 

IB, BASE CURRENT (mA)

 

 

 

Figure 10. Collector Saturation Region

 

3.0

 

 

 

 

 

 

 

 

3.0

 

 

 

 

 

 

 

 

2.5

TJ = 25°C

 

 

 

 

 

2.5

TJ = 25°C

 

 

 

 

(VOLTS)

2.0

 

 

 

 

 

 

 

(VOLTS)

2.0

VBE(sat) @ IC/IB = 250

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VOLTAGEV,

 

 

 

 

 

 

 

 

VOLTAGEV,

 

 

 

 

 

1.5

VBE @ VCE = 3.0 V

 

 

 

 

1.5

VBE(on) @ VCE = 3.0 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.0

VBE(sat) @ IC/IB = 250

 

 

 

 

 

1.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCE(sat) @ IC/IB = 250

 

 

 

 

 

 

V

 

@ I /I = 250

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CE(sat)

C B

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

0.1

0.2

0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

20

30

 

0.1

0.2

0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

20

30

 

 

 

 

IC, COLLECTOR CURRENT (AMPS)

 

 

 

 

 

IC, COLLECTOR CURRENT (AMPS)

 

Figure 11. ªOnº Voltages

4

Motorola Bipolar Power Transistor Device Data

MJH6282 MJH6283 MJH6284 MJH6285 MJH6286 MJH6287

PACKAGE DIMENSIONS

 

 

C

NOTES:

B

Q

E

1.

DIMENSIONING AND TOLERANCING PER ANSI

 

Y14.5M, 1982.

 

 

 

2.

CONTROLLING DIMENSION: MILLIMETER.

 

 

 

 

 

MILLIMETERS

INCHES

 

U

 

4

DIM

MIN

MAX

MIN

MAX

 

 

 

A

A

19.00

19.60

0.749

0.771

 

L

 

B

14.00

14.50

0.551

0.570

S

 

 

C

4.20

4.70

0.165

0.185

 

 

 

D

1.00

1.30

0.040

0.051

 

 

 

 

 

1

2

3

E

1.45

1.65

0.058

0.064

K

G

5.21

5.72

0.206

0.225

 

 

 

 

 

 

 

H

2.60

3.00

0.103

0.118

 

 

 

 

J

0.40

0.60

0.016

0.023

 

 

 

 

K

28.50

32.00

1.123

1.259

 

 

 

 

L

14.70

15.30

0.579

0.602

 

 

 

 

Q

4.00

4.25

0.158

0.167

 

 

 

 

S

17.50

18.10

0.689

0.712

 

 

 

 

U

3.40

3.80

0.134

0.149

 

 

 

 

V

1.50

2.00

0.060

0.078

D

J

 

STYLE 1:

 

V

 

H

PIN 1.

BASE

 

2.

COLLECTOR

G

 

 

 

 

3.

EMITTER

 

 

 

4.

COLLECTOR

CASE 340D±01

ISSUE A

Motorola Bipolar Power Transistor Device Data

5

MJH6282 MJH6283 MJH6284 MJH6285 MJH6286 MJH6287

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

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MJH6282/D

*MJH6282/D*

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