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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJ16018/D

Designer's Data Sheet

NPN Silicon Power Transistors

1.5 kV SWITCHMODE Series

These transistors are designed for high±voltage, high±speed, power switching in inductive circuits where fall time is critical. They are particularly suited for

line±operated switchmode applications.
Typical Applications:	Features:
• Switching Regulators		• Collector±Emitter Voltage Ð V CEV = 1500 Vdc
• Inverters		• Fast Turn±Off Times
• Solenoids		80 ns Inductive Fall Time Ð 100 _C (Typ)
• Relay Drivers		110 ns Inductive Crossover Time Ð 100 _C (Typ)
• Motor Controls		4.5 μs Inductive Storage Time Ð 100 _C (Typ)
• Deflection Circuits		• 100_C Performance Specified for:
		Reverse±Biased SOA with Inductive Load
		Switching Times with Inductive Loads
		Saturation Voltages
		Leakage Currents
MAXIMUM RATINGS

Rating			Symbol	MJ16018		MJW16018	Unit

Collector±Emitter Voltage			VCEO(sus)		800		Vdc
Collector±Emitter Voltage			VCEV		1500		Vdc
Emitter±Base Voltage			VEB		6		Vdc
Collector Current Ð Continuous			IC		10		Adc
Ð Peak (1)			I		15
			CM
Base Current Ð Continuous			IB		8		Adc
Ð Peak (1)			I		12
			BM
Total Power Dissipation			PD	175		125	Watts
@ TC = 25_C				175		125	Watts
@ TC = 100_C				100		50
Derate above TC = 25_C				1		1	W/_C
Operating and Storage Junction			TJ, Tstg	± 65 to 200		± 55 to 150	_C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic			Symbol		Max		Unit

Thermal Resistance, Junction to Case			RqJC	1		1	_C/W
Lead Temperature for Soldering			TL		275		_C
Purposes: 1/8″ from Case for
5 Seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

MJ16018* MJW16018*

*Motorola Preferred Device

POWER TRANSISTORS

10 AMPERES

800 VOLTS

125 AND 175 WATTS

CASE 1±07

TO±204AA

MJ16018

CASE 340F±03

TO±247AE

MJW16018

Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Designer's and SWITCHMODE are trademarks of Motorola, Inc.

REV 1

Motorola, Inc. 1995

MJ16018

MJW16018

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS(1)

Collector±Emitter Sustaining Voltage (Table 1) (IC = 50 mA, IB = 0)

VCEO(sus)

800

Vdc

Collector Cutoff Current

ICEV

mAdc

(VCEV = 1500 Vdc, VBE(off) = 1.5 Vdc)

0.25

(VCEV = 1500 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C)

1.5

Collector Cutoff Current (VCE = 1500 Vdc, RBE = 50 Ω, TC = 100_C)

ICER

2.5

mAdc

Emitter Cutoff Current (VEB = 6 Vdc, IC = 0)

IEBO

0.1

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

IS/b

See Figure 13

Clamped Inductive SOA with Base Reverse Biased

RBSOA

See Figure 14

ON CHARACTERISTICS(1)

Collector±Emitter Saturation Voltage

VCE(sat)

Vdc

(IC = 5 Adc, IB = 2 Adc)

(IC = 10 Adc, IB = 5 Adc)

(IC = 5 Adc, IB = 2 Adc, TC = 100_C)

1.5

Base±Emitter Saturation Voltage (IC = 5 Adc, IB = 2 Adc)

VBE(sat)

1.5

Vdc

Base±Emitter Saturation Voltage (IC = 5 Adc, IB = 2 Adc, TC = 100_C)

1.5

DC Current Gain (IC = 5 Adc, VCE = 5 Vdc)

hFE

DYNAMIC CHARACTERISTICS

Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 kHz)

Cob

450

SWITCHING CHARACTERISTICS

Inductive Load (Table 1)

Storage Time

tsv

4000

8000

Fall Time

Baker Clamped

(TJ

= 25_C)

tfi

200

(IC = 5 Adc,

Crossover Time

300

IB1 = 2 Adc,

Storage Time

VBE(off) = 2 Vdc,

tsv

4500

9000

= 400 Vdc)

Fall Time

= 100_C)

tfi

250

CE(pk)

PW = 25

Crossover Time

110

375

Resistive Load (Table 1)

Delay Time

Baker Clamped

200

Rise Time

(IC = 5 Adc, VCC = 250 Vdc,

900

2000

IB1 = 2 Adc, IB2 = 2 Adc,

Storage Time

4500

9000

RB2 = 3 Ω, PW = 25 μs,

Fall Time

Duty Cycle v 2%)

200

400

(1) Pulse Test: PW = 300 μs, Duty Cycle v 2%.

	100
	70
	50
GAIN	30	TC = 100°C
	20	TC = 100°C

CURRENT
	10	25°C		0°C
	7			0°C
, DC	7
, DC	5
FE	3
h

	2	VCE = 5 V
	1
	0.150.2	0.3	0.5	0.7	1	2	3	5	7	10	15
			IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain

(VOLTS)	10
	7
	5
VOLTAGE	5
	3
	2
,COLLECTOR±EMITTER	IC = 1 A			3 A		5 A		8 A	10 A
	1
	0.7
	0.5
	0.3
	0.2
	TC = 25°C
CE	TC = 25°C
CE	0.1
V	0.1	0.2	0.3	0.5	0.7	1	2	3	5	7
	0.07 0.1	0.2	0.3	0.5	0.7	1	2	3	5	7

IB, BASE CURRENT (AMPS)

Figure 2. Collector Saturation Region

2	Motorola Bipolar Power Transistor Device Data

MJ16018 MJW16018

TYPICAL STATIC CHARACTERISTICS

VOLTAGE (VOLTS)	10											5
	7								IC/IB = 5		VOLTAGE (VOLTS)	3
	5								TC = 100°C			2
												2
	3						IC/IB = 5
	2						IC/IB = 5					1
	2						TC = 25	°				1
					IC/IB = 2.5		TC = 25	C				0.7
					IC/IB = 2.5							0.7
COLLECTOR±EMITTER,	1	IC/IB = 2.5			TC = 100°C						, BASE±EMITTER	0.5
	0.7	IC/IB = 2.5										0.3
	0.5	TC = 25°C										0.3
	0.5											0.2
	0.3											0.2
	0.3
	0.2											0.1
	0.2										BE	0.1
											BE
											V	0.07
CE												0.07
CE	0.1											0.05
V	0.1	0.2	0.3	0.5	0.7	1	2	3	5	7	10	0.05
	0.1	0.2	0.3	0.5	0.7	1	2	3	5	7	10

IC, COLLECTOR CURRENT (AMPS)

						IC/IB = 2.5
								5
						TC = 25°C THRU 100°C
0.1	0.2	0.3	0.5	0.7	1	2	3	5	7	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 3. Collector±Emitter Saturation Region

Figure 4. Base±Emitter Saturation Region

	104							10K
A)	103										Cib
μ								1K
COLLECTOR, CURRENT (	0	REVERSE		FORWARD	VCE = 250 V		CAPACITANCEC, (pF)	1K
COLLECTOR, CURRENT (	0	REVERSE		FORWARD	VCE = 250 V		CAPACITANCEC, (pF)	10
		TJ = 150°C
	102	125°C
		100°C						100
	101	100°C
	101	75°C													Cob
		75°C										TC = 25°C			Cob
												TC = 25°C
C	10
I
	10±1	25°C						1
	10±1	± 0.2	0	+ 0.2	+ 0.4	+ 0.6		1	2	5	10	20	50	100	200	500	1K
	± 0.4	± 0.2	0	+ 0.2	+ 0.4	+ 0.6		1	2	5	10	20	50	100	200	500	1K
		VBE, BASE±EMITTER VOLTAGE (VOLTS)								VCB, COLLECTOR±BASE VOLTAGE (VOLTS)

Figure 5. Collector Cutoff Region

Figure 6. Typical Capacitance

TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS

	20							1000
					5			700
	10				5			500
	10							500
μs)	7		IC/IB = 2.5					300
TIME (	5						TIME (ns)	200
								200
	3			2.5	5
	2				5			100
STORAGE	2						,FALL	100
								70
	1							50
							fi
,							t
sv	0.7
t	0.7	VBE(off) = 2 V			NO BAKER CLAMP			30
	0.5							30
	0.5							20
	0.3	TC = 100°C			BAKER CLAMPED			20
	0.3
	0.2	1	2	3	5	7	10	10
		1	2	3	5	7	10

IC, COLLECTOR CURRENT (AMPS)

	IC/IB = 2.5
	5
	2.5
	5
	VBE(off) = 2 V		NO BAKER CLAMP
	TC = 100°C		BAKER CLAMPED
1	2	3	5	7	10
	IC, COLLECTOR CURRENT (AMPS)

Figure 7. Storage Time

Figure 8. Inductive Switching Fall Time

Motorola Bipolar Power Transistor Device Data

MJ16018 MJW16018

TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS

	2000
	1000		IC/IB = 2.5
(ns)	700		IC/IB = 2.5
	700
	500
TIME	500
TIME	300		5
, CROSSOVER	300		5
	200	2.5
	100	5
	100
	70
c
t
	50	VBE(off) = 2 V			NO BAKER CLAMP
		VBE(off) = 2 V			NO BAKER CLAMP
	30	TC = 100°C			BAKER CLAMPED
	30
	20	1	2	3	5	7	10
		1	2	3	5	7	10

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Inductive Switching Crossover Time

	6
	5
(μs)	4
TIME	4
TIME
,STORAGE	3
	2				IC = 5 A
	2				IB1	= 2 A
sv					IB1	= 2 A
sv					IB2	= 2 A OR
t

	1				VBE = ± 2 V
	0						25
	1	5	9	13	17	21	25

PULSE WIDTH (μs)

Figure 10. (tsv) Storage Time versus IB1

Pulse Width

I B2, REVERSE BASE CURRENT (AMPS)

6IC = 5 A IB1 = 2 A

5	VCE = 400 V

± 1 ± 2 ± 3 ± 4 ± 5 ± 6

VBE(off), REVERSE BASE±EMITTER VOLTAGE (VOLTS)

Figure 11. Reverse Base Current versus Off Voltage

		IC pk			VCE(pk)
CURRENT			90% VCE(pk)	90% IC(pk)
	IC	t	t		t	t
		sv	rv		fi	ti
				tc
AND	VCE		10% VCE(pk)
VOLTAGE	VCE				10%
					10%	2% IC
	I	90% I			I pk	2% IC
	B	B1			C

			TIME

Figure 12. Inductive Switching Measurements

						GUARANTEED SAFE OPERATING AREA LIMITS
	100										CURRENTCOLLECTOR(AMPS)	16
(AMPS)CURRENTCOLLECTOR	50			TC = 25°C								14
	30
	20											12
	20

	10				MJ16018				10	μs		10	IC/IB1 = 2.5, 5
					MJ16018				10	μs
	5
	5			dc		MJW16018
	3					MJW16018		1 ms				8
	3							1 ms				8	TC ≤ 100°C
	2											6	TC ≤ 100°C
	1											6							VBE(off) = 2 V
	1			THERMAL LIMIT							PEAK,								VBE(off) = 2 V
C	0.3			THERMAL LIMIT							PEAK,	4
	0.5			BONDING WIRE LIMIT								4
,											C(pk)
I	0.2			SECOND BREAKDOWN							C(pk)	2				VBE(off) = 0 V
	0.2			SECOND BREAKDOWN								2				VBE(off) = 0 V
	0.1			LIMIT							I	0
	0.1	15	20	30	50	100	200	300	500	1K		0	200	400	600	800	1K	1.2K	1.4K	1.6K	1.8K	2K
	10	15	20	30	50	100	200	300	500	1K		0	200	400	600	800	1K	1.2K	1.4K	1.6K	1.8K	2K
			VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)											VCE(pk), PEAK COLLECTOR VOLTAGE (VOLTS)

Figure 13. Maximum Forward Bias	Figure 14. Maximum Reverse Bias
Safe Operating Area	Safe Operating Area

4	Motorola Bipolar Power Transistor Device Data

MJ16018 MJW16018

	100
(%)				SECOND BREAKDOWN
(%)	80				DERATING
FACTOR	60	THERMAL
DERATING	60

		DERATING
	40

POWER	20		MJ16018
	20		MJW16018


	0	40	80	120	160	200
	0	40	80	120	160	200
			TC, CASE TEMPERATURE (°C)

Figure 15. Power Derating

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 13 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 13 may be found at any case temperature by using the appropriate curve on Figure 15.

TJ(pk) may be calculated from the data in Figure 16. At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be sustained simultaneously during turn±off, in most cases, with the base±to±emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage current condition allowable during reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 14 gives the RBSOA characteristics.

(NORMALIZED)	1.0
	0.7	D = 0.5
	0.5	D = 0.5
	0.5

RESISTANCE	0.3	0.2
	0.2	0.2
	0.2
	0.1	0.1											P(pk)
									RθJC(t) = r(t) RθJC
THERMAL
	0.07	0.05
	0.07	0.05							RθJC = 1.0°C/W MAX
	0.05								RθJC = 1.0°C/W MAX
	0.05	0.02							D CURVES APPLY FOR POWER
									PULSE TRAIN SHOWN				t1
TRANSIENT	0.03
	0.03
	0.02	0.01							READ TIME @ t1					t2
	0.02								TJ(pk) ± TC = P(pk) RθJC(t)				DUTY CYCLE, D = t1/t2
			SINGLE PULSE						TJ(pk) ± TC = P(pk) RθJC(t)
	0.01		SINGLE PULSE

r(t),		0.02	0.05
r(t),	0.01	0.02	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100	200	500	1.0 k

t, TIME (ms)

Figure 16. Thermal Response

Motorola Bipolar Power Transistor Device Data

Data Device Transistor Power Bipolar Motorola

Input

Conditions

Circuit

Values

Circuit Test

Table 1. Test Conditions for Dynamic Performance

VCEO(sus)

RBSOA

Inductive Switching

Resistive Switching

		Drive Circuit
+15					For t d and tf :
1 μF	150 Ω	100 Ω	100 μF
			MTP8P10	MTP8P10	H.P. 214
					H.P. 214
					OR			A
					EQUIV.			A
				RB1	EQUIV.
				RB1	P.G.			50 Ω
					P.G.
					A
+10					A
+10
			MUR105	RB2
50 Ω			MUR105		Vin
				MTP12N10	Vin
				MTP12N10	≈ 11 V
					≈ 11 V
	500 μF		MJE210		0
					0
							t r	≤ 15 ns
	150	Ω		1 μF			t r	≤ 15 ns
	150	Ω
Voff					For t and t	f	:
					s	f
Note: Adjust Voff to obtain desired VBE(off) at Point A					Inductive Switching Drive
Note: Adjust Voff to obtain desired VBE(off) at Point A

Circuit

L = 200 μH

for td and t r

= 0 when V

VCC = 250 Volts

L = 10 mH

L = 200 μH

BE(off)

RB selected for desired IB1

is specified or

= ∞

RB2 = 0

selected for desired IB2

selected for desired I

VCC = 20 Volts

≈ 20 Volts, Adjusted to obtain

for t

and t

I(pk) = 50 mA

RB1 selected for

desired IC

VCC = 250 Volts

Closed

desired IB1

selected for desired I

= 0

S1 Closed

S1 = Open for baker

RB1& RB2 selected for IB1 & IB2

clamp condition

R L selected for desired IC

						*I C			*I C
			MUR1100			L	I C(pk)	MUR1100	*I C
			MUR1100			L	I C(pk)
							I C
							I C	*IB
			MUR105				V CE(pk)	*IB
			MUR105		T.U.T.	MUR8100		MUR105
T 1	+V	A				MUR8100		MUR105	RL
T 1	+V	A				VCC	A	T.U.T.	RL
		*I B				VCC	VCE	RB
0 V		*I B				V	VCE		V
	±V					clamp			CC
	±V		MUR105					MUR105
			MUR105
							I B1
	Lcoil (I Cpk)		S				I B1
T 1 ≈	Lcoil (I Cpk)		S	1			I B	S 1

		VCC	*Tektronix AM503	Scope Ð Tektronix		*Tektronix AM503
T		adjusted to obtain I			I B2
	1		P6302 or Equivalent	7403 or Equivalent		P6302 or Equivalent
		C(pk)

MJ16018

MJW16018

MJ16018 MJW16018

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

±T±

SEATING

2. CONTROLLING DIMENSION: INCH.

PLANE

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO±204AA OUTLINE SHALL APPLY.

D 2 PL

INCHES

MILLIMETERS

0.13 (0.005) M

DIM

MIN

MAX

MIN

MAX

1.550 REF

39.37 REF

±Y±

±±±

1.050

±±±

26.67

0.250

0.335

6.35

8.51

0.038

0.043

0.97

1.09

0.055

0.070

1.40

1.77

0.430 BSC

10.92 BSC

0.215 BSC

5.46 BSC

0.440

0.480

11.18

12.19

0.665 BSC

16.89 BSC

±Q±

±±±

0.830

±±±

21.08

0.13 (0.005) M

0.151

0.165

3.84

4.19

1.187 BSC

30.15 BSC

0.131

0.188

3.33

4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

CASE 1±07

TO±204AA (TO±3)

ISSUE Z

						NOTES:
					±T±	1.	DIMENSIONING AND TOLERANCING PER ANSI
	±Q±				±T±	Y14.5M, 1982.
	±Q±				E	Y14.5M, 1982.
0.25 (0.010) M T	B	M			E	2.	CONTROLLING DIMENSION: MILLIMETER.
0.25 (0.010) M T	B	M	±B±		C			MILLIMETERS		INCHES
			±B±

						4	DIM MIN		MAX	MIN	MAX
						4	A	20.40	20.90	0.803	0.823
				U			A	20.40	20.90	0.803	0.823
				U	L		B	15.44	15.95	0.608	0.628
					L		C	4.70	5.21	0.185	0.205
							C	4.70	5.21	0.185	0.205
	A						D	1.09	1.30	0.043	0.051
	A	R					E	1.50	1.63	0.059	0.064
		R					F	1.80	2.18	0.071	0.086
		1	2	3			G	5.45 BSC		0.215 BSC
		1	2	3			H	2.56	2.87	0.101	0.113
							J	0.48	0.68	0.019	0.027
					±Y±		K	15.57	16.08	0.613	0.633
	K	P			±Y±		L	7.26	7.50	0.286	0.295
	K	P					P	3.10	3.38	0.122	0.133
							Q	3.50	3.70	0.138	0.145
							R	3.30	3.80	0.130	0.150
		F			H		U	5.30 BSC		0.209 BSC
		F		V	H		V	3.05	3.40	0.120	0.134
				V	J
		D			J
		D	G				STYLE 3:
							STYLE 3:
0.25 (0.010) M	Y	Q S						PIN 1. BASE
0.25 (0.010) M	Y	Q S						2. COLLECTOR
								2. COLLECTOR
								3. EMITTER
								4. COLLECTOR

CASE 340F±03

TO±247AE

ISSUE E

Motorola Bipolar Power Transistor Device Data

MJ16018 MJW16018

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

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P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

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