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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJE5850/D

		MJE5850
Designer's Data	Sheet	MJE5851*
Designer's Data	Sheet	MJE5852*
SWITCHMODE	Series	MJE5852*
SWITCHMODE	Series

PNP Silicon Power Transistors

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high±voltage, high±speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:

• Switching Regulators

• Inverters

•Solenoid and Relay Drivers

•Motor Controls

•Deflection Circuits

Fast Turn±Off Times

100 ns Inductive Fall Time @ 25_C (Typ)

125 ns Inductive Crossover Time @ 25°C (Typ) Operating Temperature Range ±65 to +150_C

100_C Performance Specified for:

Reversed Biased SOA with Inductive Loads

Switching Times with Inductive Loads

Saturation Voltages

Leakage Currents

MAXIMUM RATINGS

*Motorola Preferred Device

8 AMPERE

PNP SILICON

POWER TRANSISTORS 300, 350, 400 VOLTS 80 WATTS

CASE 221A±06

TO±220AB

Rating	Symbol	MJE5850	MJE5851	MJE5852	Unit

Collector±Emitter Voltage	VCEO(sus)	300	350	400	Vdc
Collector±Emitter Voltage	VCEV	350	400	450	Vdc
Emitter Base Voltage	VEB		6.0		Vdc
Collector Current Ð Continuous	IC		8.0		Adc
Peak (1)	ICM		1 6
Base Current Ð Continuous	IB		4.0		Adc
Peak (1)	IBM		8.0
Total Power Dissipation	PD		80		Watts
@ TC = 25_C
Derate above 25_C			0.640		_
			0.640		W/ C
Operating and Storage Junction	TJ, Tstg		± 65 to 150		_C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RqJC	1.25	_C/W
Maximum Lead Temperature for Soldering	TL	275	_C
Purposes: 1/8″ from Case for 5 Seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Designer's and SWITCHMODE are trademarks of Motorola, Inc.

Motorola, Inc. 1995

MJE5850

MJE5851

MJE5852

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector±Emitter Sustaining Voltage

MJE5850

VCEO(sus)

300

Vdc

(IC = 10 mA, IB = 0)

MJE5851

350

MJE5852

400

Collector Cutoff Current

ICEV

mAdc

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)

0.5

(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)

2.5

Collector Cutoff Current

ICER

3.0

mAdc

(VCE = Rated VCEV, RBE = 50 Ω, TC = 100_C)

Emitter Cutoff Current

IEBO

1.0

mAdc

(VEB = 6.0 Vdc, IC = 0)

SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased

IS/b

See Figure 12

Clamped Inductive SOA with base reverse biased

RBSOA

See Figure 13

*ON CHARACTERISTICS

DC Current Gain

hFE

(IC = 2.0 Adc, VCE = 5 Vdc)

(IC = 5.0 Adc, VCE = 5 Vdc)

Collector±Emitter Saturation Voltage

VCE(sat)

Vdc

(IC = 4.0 Adc, IB = 1.0 Adc)

2.0

(IC = 8.0 Adc, IB = 3.0 Adc)

5.0

(IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C)

2.5

Base±Emitter Saturation Voltage

VBE(sat)

Vdc

(IC = 4.0 Adc, IB = 1.0 Adc)

1.5

(IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C)

1.5

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

270

(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time

(VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A,

0.025

0.1

μs

Rise Time

tp = 50 μs, Duty Cycle v 2%)

0.100

0.5

μs

Storage Time

= 250 Vdc, I

= 4.0 A, I = 1.0 A,

0.60

2.0

μs

Fall Time

VBE(off) = 5 Vdc, tp = 50 μs, Duty Cycle v 2%)

0.11

0.5

μs

Inductive Load, Clamped (Table 1)

Storage Time

(ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A,

tsv

0.8

3.0

μs

Crossover Time

0.4

1.5

μs

= 5 Vdc, T

= 100_C)

BE(off)

Fall Time

tfi

0.1

μs

Storage Time

(ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A,

tsv

0.5

μs

Crossover Time

0.125

μs

= 5 Vdc, T

= 25_C)

BE(off)

Fall Time

tfi

0.1

μs

* Pulse Test: PW = 300 μs. Duty Cycle v 2%

2	Motorola Bipolar Power Transistor Device Data

MJE5850 MJE5851 MJE5852

TYPICAL ELECTRICAL CHARACTERISTICS

	200											(VOLTS)	2.0
	100	TJ = 150°C										(VOLTS)
	100	TJ = 150°C										VOLTAGE	1.6
CURRENT GAIN	70												1.6
	70
	50	TJ = 25°C											IC = 0.25 A
	30												1.2		1.0 A		2.5 A		5.0 A
	20
				VCE = 5 V									0.8								°
, DC				VCE = 5 V								COLLECTOR±EMITTER	0.8								°
, DC	10																			TJ = 25 C
FE	7.0
h	7.0
	5.0												0.4
	3.0
												,
												CE
	2.0											CE	0
	2.0											V	0						1.0	2.0	5.0
	0.1	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10		0.01	0.02	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10
			IC, COLLECTOR CURRENT (AMPS)													IB, BASE CURRENT (AMPS)

Figure 1. DC Current Gain

Figure 2. Collector Saturation Region

(VOLTS)	2.0
(VOLTS)
VOLTAGE	1.6
		IC/IB = 4
	1.2
,COLLECTOR±EMITTER	1.2
	0.8							TJ = 150°C
	0.4
									TJ = 25°C
CE	0								TJ = 25°C
V	0				0.7
	0.1	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10
			IC, COLLECTOR CURRENT (AMPS)

Figure 3. Collector±Emitter Saturation Voltage

	2.0
	1.6		IC/IB = 4
(VOLTS)	1.2
(VOLTS)
V, VOLTAGE	0.8	TJ = 25°C
V, VOLTAGE
	0.4	TJ = 150°C
		TJ = 150°C
	0
	0.1	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10
			IC, COLLECTOR CURRENT (AMPS)

Figure 4. Base±Emitter Voltage

	105									3000
										2000
(nA)	104									1000						Cib			TJ = 25°C
, COLLECTOR CURRENT	TJ = 150°C								C, CAPACITANCE (pF)	1000						Cib
	TJ = 150°C
	103									500
	102	100°C								200						Cob
	102									200
	1	REVERSE		FORWARD			VCE = 200 V			100
C	1	REVERSE		FORWARD
I	10
		25°C								50
	100	25°C
	100	+ 0.1	0	± 0.1	± 0.2	± 0.3	± 0.4	± 0.5		30	0.2	0.5	1.0	5.0	10	20	50	100	200 500	1000
	+ 0.2	+ 0.1	0	± 0.1	± 0.2	± 0.3	± 0.4	± 0.5		0.1	0.2	0.5	1.0	5.0	10	20	50	100	200 500	1000
			VBE, BASE±EMITTER VOLTAGE (VOLTS)										VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Collector Cutoff Region

Figure 6. Capacitance

Motorola Bipolar Power Transistor Device Data

MJE5850

MJE5851

MJE5852

Table 1. Test Conditions for Dynamic Performance

VCEO(sus)

RBSOA AND INDUCTIVE SWITCHING

RESISTIVE SWITCHING

+ V

50 μF

0.0025 μF

0.2

0.1 μF

TURN±ON TIME

±10 V

500 Ω

MJE15029

1/2 W

INPUT

CONDITIONS

+ V

500 Ω

1N4934

IB1

1/2 W

0.1 μF

INPUT

0.0033 μF

1/2 W

1 Ω 2 W

obtain the forced

PW Varied to Attain

500 Ω

hFE desired

IC = 100 mA

50 Ω

MJE15028

TURN±OFF TIME

2 W

1/2 W

0.2 μF

0.1 μF

Use inductive switching

driver as the input to

the resistive test circuit.

± V adjusted to obtain desired IB1

50 μF

CIRCUIT

VALUES

+ V adjusted to obtain desired VBE(off)

± V

VCC = 20 V

Pulse Width = 10 μs

Lcoil = 80 mH, VCC = 10 V

Lcoil = 180

μH

Vclamp = 250 V

VCC = 250 V

Rcoil = 0.7 Ω

Rcoil = 0.05 Ω

RB adjusted to attain desired IB1

RL = 62 Ω

INDUCTIVE TEST CIRCUIT

OUTPUT WAVEFORMS

RESISTIVE TEST CIRCUIT

CIRCUITS

t1 Adjusted to

VCC

TUT

Obtain IC

1N4937

Rcoil

ICM

tf Clamped

coil

)

TUT

t1 ≈

TEST

INPUT

EQUIVALENT

coil

Lcoil (ICM)

SEE ABOVE FOR

Vclamp

t2 ≈

VCC

DETAILED CONDITIONS

VCC

VClamp

VCEM

RS =

clamp

Test Equipment

0.1 Ω

TIME

Scope Ð Tektronix

475 or Equivalent

1.0

3.0

tc 100°C

IC = 4 A

2.7

TIMECROSSOVER(μs)

0.8

IC/IB = 4

2.4

TJ = 25°C

STORAGEVOLTAGE,

2.1

10%

10% 2%

90% I

0.6

tsv 100°C

1.8

VCEM

tfi

ICM ICM

tsv 25 C

VCE

1.5

tsr

trv

tti

0.4

1.2

0.9

TIME

0.2

0.6

90%

ICM

25 C

s)μ(

Vclamp

0.3

ICM

VCEM

TIME

VBE, BASE±EMITTER VOLTAGE (VOLTS)

Figure 7. Inductive Switching Measurements

Figure 8. Inductive Switching Times

4	Motorola Bipolar Power Transistor Device Data

MJE5850 MJE5851 MJE5852

SWITCHING TIMES NOTE

In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined.

tsv = Voltage Storage Time, 90% IB1 to 10% VCEM trv = Voltage Rise Time, 10±90% VCEM

tfi = Current Fall Time, 90±10% ICM tti = Current Tail, 10±2% ICM

tc = Crossover Time,10% VCEM to 10% ICM

An enlarged portion of the inductive switching waveform is

shown in Figure 7 to aid on the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained us-

ing the standard equation from AN±222A:

PSWT = 1/2 VCCIC(tc)f

In general, trv + tfi ] tc. However, at lower test currents this relationship may not be valid.

As is common with most switching transistors, resistive switching is specified at 25°C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a ªSWITCHMODEº transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100_C.

	1.0
	0.7							VCC = 250 V
	0.5							VCC = 250 V
	0.5							IC/IB = 4
								IC/IB = 4
	0.3							TJ = 25°C
( μs)	0.2
( μs)	0.1						tr
TIME	0.1
TIME	0.07
t,	0.05
	0.05
	0.03
	0.02							td
	0.01
	0.1	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Turn±On Switching Times

	10
	0.7
						ts
μs)	0.4
μs)
(
t, TIME	0.3					VCC = 250 V
t, TIME						IC/IB = 4
	0.2					VBE(off) = 5 V
	0.2					TJ = 25°C
						TJ = 25°C
						tf
	0.1
	0.1	0.3	0.5	0.7	1.0	2.0	4.0	7.0	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 10. Turn±Off Switching Time

		1
TRANSIENT THERMAL RESISTANCE		0.7	D = 0.5
		0.5	D = 0.5
		0.5
		0.3	0.2
	(NORMALIZED)	0.2	0.2
		0.2
		0.1	0.1							ZθJC(t) = r(t) RθJC				P(pk)
		0.1								ZθJC(t) = r(t) RθJC				P(pk)
		0.07	0.05							RθJC = 1.25°C/W MAX
		0.05								D CURVES APPLY FOR POWER
		0.05	0.02							PULSE TRAIN SHOWN					t1
		0.03	0.02							PULSE TRAIN SHOWN					t1
		0.03								READ TIME AT t1					t2
		0.02			0.01					TJ(pk) ± TC = P(pk) ZθJC(t)
r(t),		0.02			0.01					TJ(pk) ± TC = P(pk) ZθJC(t)				DUTY CYCLE, D = t1/t2
		0.01		SINGLE PULSE
		0.01
		0.01	0.02	0.05	0.1	0.2	0.5	1	2	5	10	20	50	100	200	500	1 k

t, TIME (ms)

Figure 11. Typical Thermal Response [ZθJC(t)]

Motorola Bipolar Power Transistor Device Data

MJE5850 MJE5851 MJE5852

The Safe Operating Area figures shown in Figures 12 and 13 are specified for these devices under the test conditions shown.

	20
(AMPS)	10						100 μs
(AMPS)	5.0				5 ms		1 ms
	5.0
CURRENT	2.0
CURRENT		TC	= 25°C	dc


	1.0
	1.0
COLLECTOR	0.5
COLLECTOR	0.1		(SINGLE PULSE)
	0.2		BONDING WIRE LIMIT
	0.2		THERMAL LIMIT
			THERMAL LIMIT
,
C	0.05		SECOND BREAKDOWN LIMIT MJE5850
I	0.05		SECOND BREAKDOWN LIMIT MJE5850
						MJE5851
	0.02					MJE5852
	7.0	10	20	40	70	100	200	300 400500

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 12. Maximum Forward Bias

Safe Operating Area

	8.0
(AMPS)	7.0
(AMPS)	6.0	IC/IB = 4
CURRENT		VBE(off) = 2 V to 8 V
	5.0	TJ = 100°C
	4.0
, COLLECTOR	4.0
	3.0		MJE5850
	3.0		MJE5851
			MJE5851
	2.0		MJE5852
	2.0

C
I	1.0
	1.0
	0	100	200	300	400	500
		100	200	300	400	500
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 13. RBSOA, Maximum Reverse Bias

Safe Operating Area

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a transistor average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 12 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 12 may be found at any case temperature by using the appropriate curve on Figure 15.

TJ(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be sustained simultaneously during turn±off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage±current condition allowable during reverse biased turn±off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 13 gives the RBSOA characteristics.

	3.5
	3.0	IC = 4 A
		IB1 = 1 A
(AMPS)		TJ = 25°C
	2.5

B2(pk)	2.0
I
	1.5
	1.0	2	4	6	8
	0	2	4	6	8

VBE(off), BASE±EMITTER VOLTAGE (VOLTS)

Figure 14. Peak Reverse Base Current

	1
					SECOND BREAKDOWN
FACTOR	0.8					DERATING
FACTOR	0.6
DERATING	0.6
			THERMAL
	0.4		DERATING
	0.4
POWER	0.2
	0.2
	0	40	60	80	100	120	140	160
	20	40	60	80	100	120	140	160
			TC, CASE TEMPERATURE (°C)

Figure 15. Forward Bias Power Derating

6	Motorola Bipolar Power Transistor Device Data

MJE5850 MJE5851 MJE5852

PACKAGE DIMENSIONS

				±T±
	B		F	C
			T	S
4
Q			A
1	2	3	U
H
Z			K
Z
L				R
V				J
G
			D
	N

SEATING PLANE

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.570	0.620	14.48	15.75
B	0.380	0.405	9.66	10.28
C	0.160	0.190	4.07	4.82
D	0.025	0.035	0.64	0.88
F	0.142	0.147	3.61	3.73
G	0.095	0.105	2.42	2.66
H	0.110	0.155	2.80	3.93
J	0.018	0.025	0.46	0.64
K	0.500	0.562	12.70	14.27
L	0.045	0.060	1.15	1.52
N	0.190	0.210	4.83	5.33
Q	0.100	0.120	2.54	3.04
R	0.080	0.110	2.04	2.79
S	0.045	0.055	1.15	1.39
T	0.235	0.255	5.97	6.47
U	0.000	0.050	0.00	1.27
V	0.045	±±±	1.15	±±±
Z	±±±	0.080	±±±	2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

CASE 221A±06

TO±220AB

ISSUE Y

Motorola Bipolar Power Transistor Device Data

MJE5850 MJE5851 MJE5852

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
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