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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BUL44D2/D

Designer's Data Sheet

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network

The BUL44D2 is state±of±art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.

Main features:

•Low Base Drive Requirement

•High Peak DC Current Gain (55 Typical) @ IC = 100 mA

•Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread

•Integrated Collector±Emitter Free Wheeling Diode

•Fully Characterized and Guaranteed Dynamic VCE(sat)

•ª6 Sigmaº Process Providing Tight and Reproductible Parameter Spreads

It's characteristics make it also suitable for PFC application.

MAXIMUM RATINGS

BUL44D2

POWER TRANSISTORS

2 AMPERES

700 VOLTS

50 WATTS

CASE 221A±06

TO±220AB

Rating	Symbol	Value	Unit

Collector±Emitter Sustaining Voltage	VCEO	400	Vdc
Collector±Base Breakdown Voltage	VCBO	700	Vdc
Collector±Emitter Breakdown Voltage	VCES	700	Vdc
Emitter±Base Voltage	VEBO	12	Vdc
Collector Current Ð Continuous	IC	2	Adc
Ð Peak (1)	ICM	5
Base Current Ð Continuous	IB	1	Adc
Base Current Ð Peak (1)	IBM	2
*Total Device Dissipation @ TC = 25_C	PD	50	Watt
*Derate above 25°C		0.4	W/_C

Operating and Storage Temperature	TJ, Tstg	± 65 to 150	_C

THERMAL CHARACTERISTICS

Thermal Resistance			_C/W
Ð Junction to Case	RqJC	2.5
Ð Junction to Ambient	RqJA	62.5
Maximum Lead Temperature for Soldering Purposes:	TL	260	_C
1/8″ from case for 5 seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

Designer's and SWITCHMODE are trademarks of Motorola, Inc.

Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Motorola, Inc. 1995

BUL44D2

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic		Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector±Emitter Sustaining Voltage		VCEO(sus)	400	470		Vdc
(IC = 100 mA, L = 25 mH)
Collector±Base Breakdown Voltage		VCBO	700	920		Vdc
(ICBO = 1 mA)
Emitter±Base Breakdown Voltage		VEBO	12	14.5		Vdc
(IEBO = 1 mA)
Collector Cutoff Current	@ TC = 25°C	ICEO			50	μAdc
(VCE = Rated VCEO, IB = 0)	@ TC = 125°C				500
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)	@ TC = 25°C	ICES			50	μAdc
	@ TC = 125°C				500
Collector Cutoff Current (VCE = 500 V, VEB = 0)	@ TC = 125°C				100
Emitter±Cutoff Current		IEBO			100	μAdc
(VEB = 10 Vdc, IC = 0)
ON CHARACTERISTICS

Base±Emitter Saturation Voltage	@ TC = 25°C	VBE(sat)				Vdc
(IC = 0.4 Adc, IB = 40 mAdc)	@ TC = 25°C			0.78	0.9
	@ TC = 125°C			0.65	0.8
(IC = 1 Adc, IB = 0.2 Adc)	@ TC = 25°C			0.87	1
	@ TC = 125°C			0.76	0.9
Collector±Emitter Saturation Voltage	@ TC = 25°C	VCE(sat)				Vdc
(IC = 0.4 Adc, IB = 40 mAdc)	@ TC = 25°C			0.25	0.4
	@ TC = 125°C			0.27	0.5
(IC = 1 Adc, IB = 0.2 Adc)	@ TC = 25°C			0.28	0.5
	@ TC = 125°C			0.35	0.6
(IC = 0.4 Adc, IB = 20 mAdc)	@ TC = 25°C			0.45	0.65
	@ TC = 125°C			0.67	1
DC Current Gain	@ TC = 25°C	hFE				Ð
(IC = 0.4 Adc, VCE = 1 Vdc)	@ TC = 25°C		20	32
	@ TC = 125°C		18	26
(IC = 1 Adc, VCE = 1 Vdc)	@ TC = 25°C		10	14
	@ TC = 125°C		7	9.5
DIODE CHARACTERISTICS

Forward Diode Voltage	@ TC = 25°C	VEC		1.1	1.5	V
(IEC = 1 Adc)	@ TC = 25°C
(IEC = 0.4 Adc)	@ TC = 25°C			0.9	1.2
(IEC = 0.2 Adc)	@ TC = 25°C			0.8	1
(IEC = 0.2 Adc)	@ TC = 125°C			0.6
Forward Recovery Time (see Figure 22 bis)		Tfr		415		ns
(IF = 0.2 Adc, di/dt = 10 A/μs)	@ TC = 25°C
(IF = 0.4 Adc, di/dt = 10 A/μs)	@ TC = 25°C			390
(IF = 1 Adc, di/dt = 10 A/μs)	@ TC = 25°C			340

2	Motorola Bipolar Power Transistor Device Data

BUL44D2

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

DYNAMIC SATURATION VOLTAGE

= 0.4 A

@ 1 μs

@ TC = 25°C

VCE(dsat)

3.3

6.8

@ TC = 125 C

Dynamic Saturation

IB1 = 40 mA

@ 3 μs

@ TC = 25°C

0.5

Voltage:

VCC = 300 V

@ TC = 125°C

1.3

Determined 1 s and

3 μs respectively after

@ 1 μs

@ TC = 25°C

4.4

rising IB1 reaches

= 1 A

12.8

90% of final IB1

= 0.2 A

@ TC = 125 C

@ 3 μs

@ TC = 25°C

0.5

VCC = 300 V

@ TC = 125°C

1.8

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth

MHz

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)

Output Capacitance

Cob

(VCB = 10 Vdc, IE = 0, f = 1 MHz)

Input Capacitance

Cib

240

500

(VEB = 8 Vdc)

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 μs)

Turn±on Time

= 0.5 Adc, I

= 50 mAdc

@ TC = 25°C

ton

450

600

@ TC = 125 C

IB2 = 250 mAdc

Turn±off Time

@ TC = 25°C

toff

700

1000

V = 300 Vdc

@ TC = 125°C

1300

Turn±on Time

= 1 Adc, I

= 0.2 Adc

@ TC = 25°C

ton

150

105

@ TC = 125 C

IB2 = 0.5 Adc

Turn±off Time

@ TC = 25°C

toff

1.1

1.25

μs

VCC = 300 Vdc

@ TC = 125°C

1.5

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 μH)

Fall Time

@ TC = 25°C

110

150

IC = 0.4 Adc

@ TC = 125°C

105

Storage Time

@ TC = 25°C

0.55

0.75

μs

IB1 = 40 mAdc

@ TC = 125°C

0.70

IB2 = 0.2 Adc

Crossover Time

@ TC = 25°C

150

@ TC = 125°C

Fall Time

@ TC = 25°C

100

150

IC = 1 Adc

@ TC = 125°C

Storage Time

@ TC = 25°C

1.05

1.5

μs

IB1 = 0.2 Adc

@ TC = 125°C

1.45

IB2 = 0.5 Adc

Crossover Time

@ TC = 25°C

100

175

@ TC = 125°C

100

Fall Time

@ TC = 25°C

110

150

IC = 0.8 Adc

@ TC = 125°C

180

Storage Time

@ TC = 25°C

2.05

2.35

μs

IB1 = 160 mAdc

@ TC = 125°C

2.8

IB2 = 160 mAdc

Crossover Time

@ TC = 25°C

180

300

@ TC = 125°C

400

Fall Time

@ TC = 25°C

150

225

IC = 0.4 Adc

@ TC = 125°C

175

Storage Time

@ TC = 25°C

1.65

1.95

μs

IB1 = 40 mAdc

@ TC = 125°C

2.2

IB2 = 40 mAdc

Crossover Time

@ TC = 25°C

150

250

@ TC = 125°C

330

Motorola Bipolar Power Transistor Device Data

BUL44D2

TYPICAL STATIC CHARACTERISTICS

	100
	VCE = 1 V
GAIN	80
GAIN		TJ = 125°C
CURRENT	60	TJ = 25°C
CURRENT	40
DC	40	TJ = ± 20°C
DC		TJ = ± 20°C
,
FE
h	20
	20
	0
	0.001	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain @ 1 Volt

	4
				TJ = 25°C
(VOLTS)	3
(VOLTS)				2 A
, VOLTAGE	2			2 A
	2
			1.5 A

CE			1 A
V	1
	1
			400 mA
	0	IC = 200 mA
	0
	1	10	100	1000
		IB, BASE CURRENT (mA)

Figure 3. Collector Saturation Region

	10
		IC/IB = 10
(VOLTS)
,VOLTAGE	1
,VOLTAGE				TJ = 25°C
CE			TJ = 125°C
V
				TJ = ± 20°C
	0.1			1
	0.001	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 5. Collector±Emitter Saturation Voltage

	100
	VCE = 5 V
GAIN	80	TJ = 125°C
		TJ = 125°C

DC CURRENT	60	TJ = 25°C
DC CURRENT	40	TJ = ± 20°C
,
FE
h	20
	20
	0
	0.001	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 2. DC Current Gain @ 5 Volt

	10
		IC/IB = 5
(VOLTS)
, VOLTAGE	1
, VOLTAGE				TJ = 125°C
CE
V			TJ = 25°C
			TJ = 25°C
	0.1			TJ = ± 20°C
	0.1
	0.001	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 4. Collector±Emitter Saturation Voltage

	10
		IC/IB = 20
(VOLTS)			TJ = 25°C
, VOLTAGE	1		TJ = 25°C
	1

CE			TJ = 125°C
V			TJ = 125°C
			TJ = ± 20°C
	0.1
	0.001	0.01	0.1	1
		IC, COLLECTOR CURRENT (AMPS)

Figure 6. Collector±Emitter Saturation Voltage

4	Motorola Bipolar Power Transistor Device Data

BUL44D2

TYPICAL STATIC CHARACTERISTICS

	10
		IC/IB = 5
(VOLTS)
, VOLTAGE	1		TJ = ± 20°C
, VOLTAGE				TJ = 125°C
BE				TJ = 125°C
BE
V			TJ = 25°C
			TJ = 25°C
	0.1
	0.001	0.01	0.1	1	10

IC, COLLECTOR CURRENT (AMPS)

Figure 7A. Base±Emitter Saturation Region

	10
		IC/IB = 20
(VOLTS)
, VOLTAGE	1		TJ = ± 20°C
, VOLTAGE			TJ = 125°C
BE			TJ = 125°C
BE
V			TJ = 25°C
			TJ = 25°C
	0.1
	0.001	0.01	0.1	1
		IC, COLLECTOR CURRENT (AMPS)

Figure 7C. Base±Emitter Saturation Region

	10
		IC/IB = 10
(VOLTS)
, VOLTAGE	1		TJ = ± 20°C
, VOLTAGE				TJ = 125°C
BE				TJ = 125°C
BE
V			TJ = 25°C
			TJ = 25°C
	0.1
	0.001	0.01	0.1	1	10

IC, COLLECTOR CURRENT (AMPS)

Figure 7B. Base±Emitter Saturation Region

	10
(VOLTS)
VOLTAGE			25°C
VOLTAGE	1
FORWARD DIODE	1
				125°C

	0.1		1
	0.01	0.1	1	10

REVERSE EMITTER±COLLECTOR CURRENT (AMPS)

Figure 8. Forward Diode Voltage

Motorola Bipolar Power Transistor Device Data

BUL44D2

TYPICAL SWITCHING CHARACTERISTICS

	1000			1000
		Cib (pF)	TJ = 25°C
		Cib (pF)	f(test) = 1 MHz	800
				800
(pF)	100
CAPACITANCE			Cob (pF)	600
			Cob (pF)
			t,TIME(ns)	400
	10		t,TIME(ns)
C,	10
C,
				200
	1			0
	1	10	100

	IBon = IBoff	TJ = 125°C
	VCC = 300 V	TJ = 25°C
	PW = 40 μs
		IC/IB = 10
	IC/IB = 5
0.2	0.8	1.4	2

VR, REVERSE VOLTAGE (VOLTS)	IC, COLLECTOR CURRENT (AMPS)
Figure 9. Capacitance	Figure 10. Resistive Switch Time, ton

	4000
			IC/IB = 10	IBon = IBoff
	3500		IC/IB = 10	V	= 300 V
				CC
				PW = 40 μs
μs)	3000
μs)
(
t, TIME	2500
t, TIME	2000
	2000
	1500	TJ = 125°C
		TJ = 25°C	IC/IB = 5
	1000
	0	1			2

	3
	2.5
μs)	2
μs)
(
t, TIME	1.5
t, TIME	1
	1			IBon = IBoff
				IBon = IBoff
	0.5	TJ = 125°C		VCC = 15 V
	0.5	TJ = 125°C		V	= 300 V
		TJ = 25°C		Z		μH
		TJ = 25°C		L	= 200	μH
				C
	0		1.2
	0.4	0.8	1.2	1.6		2

IC, COLLECTOR CURRENT (AMPS)

Figure 11. Resistive Switch Time, toff

	700			TJ = 125°C
				TJ = 125°C	IC/IBon = 5
	600			TJ = 25°C
	500	IBon = IBoff					tc
(ns)		V	CC	= 15 V			tc
(ns)	400	VZ = 300 V
TIME		LC = 200 μH
TIME	300
t,	300
t,
	200						tfi
							tfi
	100
	0
	0			0.5	1	1.5	2

IC, COLLECTOR CURRENT (AMPS)

Figure 13. Inductive Switching,

tc & tfi @ IC/IB = 5

Figure 12. Inductive Storage Time,

		tsi @ IC/IB = 5
	4
		TJ = 125°C
		TJ = 25°C
s)	3
(μ		IC = 1 A
TIME		IC = 1 A
TIME
,STORAGE	2
,STORAGE				I	= I	Boff
si				I	= I
t	1			Bon
	1	IC = 0.3 A		VCC = 15 V
		IC = 0.3 A		VCC = 15 V
				VZ = 300 V
	0			LC = 200 μH
	0		9
	3	6	9	12		15

hFE, FORCED GAIN

Figure 14. Inductive Storage Time

6	Motorola Bipolar Power Transistor Device Data

BUL44D2

TYPICAL SWITCHING CHARACTERISTICS

	700
	600	IBoff = IBon			TJ = 125°C
	600	VCC = 15 V			TJ = 25°C
	500	VZ = 300 V
	500	μ	H
(ns)		LC = 200	H			IC = 0.3 A
TIME	400
TIME
, FALL	300
, FALL
fi
t	200
	200
	100				IC = 1 A
	0				IC = 1 A
	0
	3	5		7	9	11	13	15
					hFE, FORCED GAIN

Figure 15. Inductive Fall Time

	900	TJ = 125°C
	800	TJ = 125°C
	800	TJ = 25°C
		TJ = 25°C
	700
	600		IC/IB = 20
(ns)	500
TIME	400
t,	300
	300			IC/IB = 10
				IC/IB = 10
	200
	100			IBon = IBoff	VZ = 300 V
	0			VCC = 15 V	LC = 200 μH
	0.4	0.8	1.2	1.6	2

IC, COLLECTOR CURRENT (AMPS)

Figure 17. Inductive Switching, tfi

3000
	IC/IB = 5				IBon = IBoff
					VCC = 15 V
					VZ = 300 V
2000					LC = 200 μH
2000
TIME (ns)	IB = 50 mA
t,		IB = 100 mA
1000		IB = 100 mA
			IB = 200 mA
				IB = 500 mA
0
0	0.5	1	1.5	2	2.5	3

IC, COLLECTOR CURRENT (AMPS)

Figure 19. Inductive Storage Time, tsi

	1000		TJ = 125°C
		IBon = IBoff	TJ = 125°C
	800	VCC = 15 V	TJ = 25°C
(ns)	800	VZ = 300 V
(ns)		LC = 200 μH
TIME		LC = 200 μH
TIME	600			IC = 1 A
, CROSSOVER	400
, CROSSOVER
c
t	200
	200
				IC = 0.3 A
	0
	3	6	9	12	15

hFE, FORCED GAIN

Figure 16. Inductive Crossover Time

	2000
		IBoff = IC/2			TJ = 125°C
		VCC = 15 V			TJ = 25°C
	1500	VZ = 300 V
		LC = 200 μH		IC/IB = 20
(ns)
t, TIME	1000
t, TIME
	500
				IC/IB = 10
	0		1.2
	0.4	0.8	1.2	1.6	2
		IC, COLLECTOR CURRENT (AMPS)

Figure 18. Inductive Switching, tc

	3000
	2500				IC/IB = 10
	2500
(ns)	2000
(ns)				IC/IB = 20
t, TIME				IC/IB = 20
t, TIME	1500
		IBon = IBoff
	1000	VCC = 15 V			TJ = 125°C
		V	= 300 V		TJ = 125°C
		Z	= 200 μH		TJ = 25°C
		L	= 200 μH		TJ = 25°C
	500	C
	500	0	0.5	1	1.5	2
		0	0.5	1	1.5	2

IC, COLLECTOR CURRENT (AMPS)

Figure 20. Inductive Storage Time, tsi

Motorola Bipolar Power Transistor Device Data

BUL44D2

TYPICAL SWITCHING CHARACTERISTICS

VCE	dyn 1 μs
	dyn 1 μs
		dyn 3 μs
0 V
90% IB
1	μs
IB	3	μs
	3	μs
		TIME

Figure 21. Dynamic Saturation

Voltage Measurements

10
9	IC					90% IC
8			tsi			tfi
7			tsi
7
6							10% IC
5	Vclamp		10% Vclamp			tc	10% IC
4						tc
4
3	IB	90% IB1
2
1
0
0	1	2	3	4	5	6	7	8
				TIME

Figure 22. Inductive Switching Measurements

		VFRM	VFR (1.1 VF unless
			otherwise specified)
VF		tfr		VF
		tfr
	0.1 VF
0
IF
	10% IF
0	2	4	6	8	10

Figure 22 bis. tfr Measurements

Table 1. Inductive Load Switching Drive Circuit

+15 V
1 μF	150 Ω	100 Ω	MTP8P10	100 μF
1 μF	150 Ω	100 Ω	MTP8P10
	3 W	3 W
	3 W
MPF930			MTP8P10	RB1	VCE
MPF930			MUR105	RB1	IB1
	MPF930		MUR105		IB1
+10 V	MPF930			Iout	I
					B
				A
50 Ω			MJE210	RB2
				RB2

COMMON		150 Ω	MTP12N10
		150 Ω	MTP12N10		V(BR)CEO(sus)
	500 μF	3 W			V(BR)CEO(sus)
	500 μF				L = 10 mH
				1 μF	RB2 = ∞
				1 μF	VCC = 20 Volts
±Voff					IC(pk) = 100 mA
±Voff

IC PEAK

VCE PEAK

IB2

Inductive Switching

L = 200 μH

RB2 = 0

VCC = 15 Volts RB1 selected for desired IB1

RBSOA

L = 500 μH

RB2 = 0

VCC = 15 Volts RB1 selected for desired IB1

8	Motorola Bipolar Power Transistor Device Data

BUL44D2

TYPICAL CHARACTERISTICS

	10
(AMPS)				1 μs
			10 μs
			1 ms
COLLECTOR CURRENT	1	5 ms	1 ms	EXTENDED SOA
	1	5 ms
		DC
	0.1

,
C
I
	0.01
	10	100		1000
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 23. Forward Bias Safe Operating Area

	2.5
(AMPS)							TC ≤ 125°C
	2						GAIN ≥ 4
	2						LC = 500 μH
							LC = 500 μH
CURRENT	1.5
CURRENT
, COLLECTOR	1
, COLLECTOR	0.5					± 5 V
C
I			0 V
			0 V	±1.5 V
				±1.5 V
	0			500			800
	200	300	400	500	600	700	800	900
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 24. Reverse Bias Safe Operating Area

	1
					SECOND BREAKDOWN
FACTOR	0.8					DERATING
FACTOR
DERATING	0.6	THERMAL DERATING
		THERMAL DERATING
	0.4
POWER	0.4
POWER	0.2
	0.2
	0	40	60	80		120	140
	20	40	60	80	100	120	140	160
			TC, CASE TEMPERATURE (°C)

Figure 25. Forward Bias Power Derating

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ±VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 23 is based

on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to

10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 23 may be found at any case temperature by using the appropriate curve on Figure 25.

TJ(pk) may be calculated from the data in Figure 26. At any case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn±off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 24). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.

Motorola Bipolar Power Transistor Device Data

BUL44D2

TYPICAL THERMAL RESPONSE

		1
TRANSIENTTHERMAL RESISTANCE			0.5
			0.2
	(NORMALIZED)		0.1
		0.1	0.05		P(pk)	RθJC(t) = r(t) RθJC
						RθJC = 2.5°C/W MAX
			0.02			D CURVES APPLY FOR POWER
					t1	PULSE TRAIN SHOWN
			SINGLE PULSE		t1	READ TIME AT t1
			SINGLE PULSE		t	READ TIME AT t1
r(t),					2	TJ(pk) ± TC = P(pk) RθJC(t)
r(t),					DUTY CYCLE, D = t1/t2	TJ(pk) ± TC = P(pk) RθJC(t)
		0.01
		0.01	0.1	1	10	100	1000

t, TIME (ms)

Figure 26. Typical Thermal Response (ZθJC(t)) for BUL44D2

TYPICAL STATIC CHARACTERISTICS

	1100
	1000	TJ = 25°C
(VOLTS)	900	BVCER (VOLTS) @ 10 mA
		BVCER (VOLTS) @ 10 mA
	800

BVCER	700
BVCER
	600
	500	BVCER(sus) @ 200 mA
	500
	400
	10	100	1000
		RBE (Ω)

Figure 27. BVCER

	440
(ns)	420			dI/dt = 10 A/μs
TIME	420			dI/dt = 10 A/μs
TIME	400			TC = 25°C
RECOVERY	400
	380
	360
, FORWARD	360
	340

fr	320
t

	300			1.5
	0	0.5	1	1.5	2

IF, FORWARD CURRENT (AMP)

Figure 28. Forward Recovery Time tfr

10	Motorola Bipolar Power Transistor Device Data

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