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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJ16110/D

Designer's Data Sheet

NPN Silicon Power Transistors

SWITCHMODE Bridge Series

. . . specifically designed for use in half bridge and full bridge off line converters.

•Excellent Dynamic Saturation Characteristics

•Rugged RBSOA Capability

•Collector±Emitter Sustaining Voltage Ð V CEO(sus) Ð 400 V

•Collector±Emitter Breakdown Ð V (BR)CES Ð 650 V

•State±of±Art Bipolar Power Transistor Design

•Fast Inductive Switching:

tfi = 25 ns (Typ) @ 100_C tc = 50 ns (Typ) @ 100_C

tsv = 1 μs (Typ) @ 100_C

• Ultrafast FBSOA Specified

• 100_C Performance Specified for: RBSOA

Inductive Load Switching Saturation Voltages Leakages

MAXIMUM RATINGS

Rating	Symbol	MJ16110		MJW16110	Unit

Collector±Emitter Sustaining Voltage	VCEO(sus)		400		Vdc
Collector±Emitter Breakdown Voltage	VCES		650		Vdc
Emitter±Base Voltage	VEBO		6		Vdc
Collector Current Ð Continuous	IC		15		Adc
Ð Pulsed (1)	ICM		20
Base Current Ð Continuous	IB		10		Adc
Ð Pulsed (1)	IBM		15
Total Power Dissipation	PD	175		135	Watts
@ TC = 25_C		175		135	Watts
@ TC = 100_C		100		54
Derated above 25_C		1		1.09	_
					W/ C
Operating and Storage Temperature	TJ, Tstg	± 65 to 200		± 55 to 150	_C

THERMAL CHARACTERISTICS

Thermal Resistance Ð	RqJC	1	0.92	_C/W
Junction to Case

Maximum Lead Temperature for	TL	275		_C
Soldering Purposes 1/8″ from Case
for 5 Seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

MJ16110* MJW16110*

*Motorola Preferred Device

POWER TRANSISTORS

15 AMPERES

400 VOLTS

175 AND 135 WATTS

CASE 1±07

TO±204AA

(FORMERLY TO±3)

MJ16110

CASE 340F±03

TO±247AE

MJW16110

Designer's Data for ªWorst Caseº Conditions Ð The Designer' s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Designer's and SWITCHMODE are trademarks of Motorola Inc.

REV 1

Motorola, Inc. 1995

MJ16110		MJW16110
	ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

				Characteristic		Symbol	Min	Typ	Max	Unit

	OFF CHARACTERISTICS (1)

	Collector±Emitter Sustaining Voltage (Table 1) (IC = 20 mAdc, IB = 0)					VCEO(sus)	400	Ð	Ð	Vdc
	Collector Cutoff Current					ICEV				μAdc
	(VCE = 650 Vdc, VBE(off) = 1.5 V)						Ð	Ð	100
	(VCE = 650 Vdc, VBE(off) = 1.5 V, TC = 100_C)						Ð	Ð	1000
	Collector Cutoff Current (VCE = 650 Vdc, RBE = 50 Ω, TC = 100_C)					ICER	Ð	Ð	1000	μAdc
	Emitter±Base Leakage (VEB = 6 Vdc, IC = 0)					IEBO	Ð	Ð	10	μAdc
	ON CHARACTERISTICS (1)

	Collector±Emitter Saturation Voltage					VCE(sat)				Vdc
	(IC = 5 Adc, IB = 0.5 Adc)						Ð	0.3	0.9
	(IC = 10 Adc, IB = 1.2 Adc)						Ð	0.7	2.0
	(IC = 10 Adc, IB = 2 Adc)						Ð	0.3	1.0
	(IC = 10 Adc, IB = 2 Adc, TC = 100_C)						Ð	0.4	1.5
	Base±Emitter Saturation Voltage					VBE(sat)				Vdc
	Base±Emitter Saturation Voltage					VBE(sat)				Vdc
	(IC = 10 Adc, IB = 2 Adc)						Ð	1.2	1.5
	(IC = 10 Adc, IB = 2 Adc, TC = 100_C)						Ð	1.2	1.5
	DC Current Gain (IC = 15 Adc, VCE = 5 Vdc)					hFE	6	12	20	Ð
	DYNAMIC CHARACTERISTICS

	Dynamic Saturation					VCE(dsat)	See Figures 11, 12, and 13			V
	Output Capacitance (VCE = 10 Vdc, IE = 0, ftest = 1 kHz)					Cob	Ð	Ð	400	pF
	SWITCHING CHARACTERISTICS

	Inductive Load (Table 1)

	Storage					tsv	Ð	700	1500	ns
	Crossover				TJ = 25_C	tc	Ð	45	150
	Fall Time		IC = 10 A, IB1= 1 A,			tfi	Ð	20	75
			VBE(off) = 5 V,
	Storage		VBE(off) = 5 V,			tsv	Ð	1000	2000
	Storage		V	= 250 V		tsv	Ð	1000	2000
			CE(pk)
	Crossover				TJ = 100_C	tc	Ð	50	200
	Fall Time					tfi	Ð	25	125
	Resistive Load (Table 2)

	Delay Time					td	Ð	15	Ð	ns
	Rise Time		IC = 10 A, IB1 = 1 A,		IB2 = 2 A,	tr	Ð	330	Ð
	Storage Time		IC = 10 A, IB1 = 1 A,		RB2 = 4 Ω	t	Ð	800	Ð
			VCC = 250 V,			s
	Fall Time		PW = 30 μs,			tf	Ð	110	Ð
	Fall Time		Duty Cycle = v2%			tf	Ð	110	Ð
	Storage Time		Duty Cycle = v2%		VBE(off) = 5 V	ts	Ð	500	Ð
	Storage Time					ts	Ð	500	Ð
	Fall Time					tf	Ð	250	Ð
	Fall Time					tf	Ð	250	Ð

(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle v 2%.

2	Motorola Bipolar Power Transistor Device Data

																	MJ16110		MJW16110
							TYPICAL STATIC CHARACTERISTICS
h									COLLECTOR±EMITTERSATURATION	(VOLTS)VOLTAGE	3									TJ = 25°C
h									COLLECTOR±EMITTERSATURATION	(VOLTS)VOLTAGE	0.07									TJ = 25°C
	30		°								2
	30	TJ = 100 C
	20		°								1
GAIN											0.7						TJ = 100°C
CURRENT											0.5						TJ = 25°C
	10	TJ = ± 55°C															TJ = 25°C
	10	TJ = ± 55°C									0.3	IC/IB = 10
, DC											0.2
, DC	5
FE	5										0.1									TJ = 100°C
FE											0.1									TJ = 100°C
	3						VCE = 5 V		,		0.05
							VCE = 5 V		CE		0.05									I	/I = 5
	2								V		0.03									C B
	2										0.03
	0.2	0.3	0.5	1	2	3	5	10	20		0.15 0.2		0.3	0.5	0.7	1	2	3	5	7	10	15
				IC, COLLECTOR CURRENT (AMPS)										IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain

Figure 2. Collector±Emitter Saturation Voltage

(VOLTS)	10
	7						TJ = 25°C
	5						TJ = 25°C
VOLTAGE	5
VOLTAGE	2
COLLECTOR±EMITTER	1		10 A			15 A
	1
	0.7
	0.5
		5 A		7 A
	0.2	IC = 3 A
,
CE	0.1
V	0.1	0.2	0.5	0.7	1	2	5	7	10
	0.1	0.2	0.5	0.7	1	2	5	7	10
		IB, BASE CURRENT (AMPS)

(VOLTS)	3
	2	IC/IB = 5 & 10
	2

VOLTAGE	1.5
VOLTAGE
, BASE±EMITTER	1
	0.7	TJ = 25°C
	0.5	TJ = 100°C
		TJ = 100°C
BE
V
	0.3	0.3	0.5			2	3	5		10	15
	0.15 0.2	0.3	0.5	0.7	1	2	3	5	7	10	15
			IC, COLLECTOR CURRENT (AMPS)

Figure 3. Collector±Emitter Saturation Region

Figure 4. Base±Emitter Saturation Region

C, CAPACITANCE (pF)

10K
5K
5K
3K						C	ib
3K							ib
2K
2K
1K



500



300
300
200
200
100
100															C	ob
50



30								TJ	=	25	°C
20
20												f	test =	1	kHz
												f
10
0.1	0.3 0.5	1	3	5	10			30		50	100	300			600 1K

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 5. Capacitance

Motorola Bipolar Power Transistor Device Data

MJ16110 MJW16110

TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS

IC/IB = 10, TC = 100°C, VCE(pk) = 250 V

	10K
	7K
	5K
(ns)	3K					VBE(off) = 0 V
TIME	2K					IB2 = 2 (IB1)
TIME				VBE(off) = 2 V
,STORAGE	1K			VBE(off) = 2 V
	1K
	700					VBE(off) = 5 V
	500
sv	300
t

	100	2	3	5	7	10	15
	1.5	2	3	5	7	10	15
			IC, COLLECTOR CURRENT (AMPS)

Figure 6. Storage Time

	1K
	700
	500
(ns)	300				VBE(off) = 0 V
TIME	200				VBE(off) = 0 V
	200

, CROSSOVER	100					IB2 = 2 (IB1)
	100					VBE(off) = 5 V
	70					VBE(off) = 5 V
	50				V		= 2 V
					V	BE(off)	= 2 V
c	30					BE(off)
t

	20
	10	2	3	5	7	10		15
	1.5	2	3	5	7	10		15

IC, COLLECTOR CURRENT (AMPS)

Figure 7. Crossover Time

(ns)	1K
	700
	500
FALL TIME	500
FALL TIME	200
CURRENT	200
	100				VBE(off) = 0 V
	100
	70					IB2 = 2 (IB1)
COLLECTOR	70					IB2 = 2 (IB1)
	50
	30				VBE(off) = 2 V
	20				V	BE(off)	= 5 V
,						BE(off)
fi
t	10
	10	2	3	5	7	10		15
	1.5	2	3	5	7	10		15
			IC, COLLECTOR CURRENT (AMPS)

Figure 8. Fall Time

	IC(pk)		VCE(pk)
		90% VCE(pk)	90% IC(pk)
IC	t	t	t		t
	sv	rv	fi		ti
			tc
VCE		10% VCE(pk)		10%
		10% VCE(pk)		10%	2% IC
I	90% I		I	(pk)	2% IC
B	B1			C

t, TIME

Figure 9. Inductive Switching Measurements

	10
(AMPS)	9
(AMPS)	8
CURRENT	8
	7
	6	IB1 = 2 A
		IB1 = 2 A
BASE	5			1 A
BASE	4			1 A
, REVERSE	4
	3				IC = 10 A
					IC = 10 A
	2				TC = 25°C
B2	1
I

	0	1	2	3	4	5
	0	1	2	3	4	5
		VBE(off), REVERSE BASE VOLTAGE (VOLTS)

Figure 10. Peak Reverse Base Current

4	Motorola Bipolar Power Transistor Device Data

							MJ16110	MJW16110
				Table 1. Inductive Load Switching
	Drive Circuit				VCEO(sus)
+15					VCEO(sus)			IC(pk)
1 μF	150 Ω 100 Ω	100 μF			L = 10 mH			IC(pk)
1 μF	150 Ω 100 Ω	100 μF			RB2 = ∞		IC
					RB2 = ∞		IC
		MTP8P10		MTP8P10	VCC = 20 Volts		VCE(pk)
					I	= 20 mA	VCE(pk)
					C(pk)
				RB1	Inductive Switching		V
	MPF930				L = 200 μH		CE
	MPF930			A	L = 200 μH
+10				A	RB2 = 0
MPF930				RB2	VCC = 20 Volts			I
		MUR105		RB2	RB1 selected for desired IB1		IB	B1
50 Ω					RB1 selected for desired IB1
50 Ω					RBSOA
				MTP12N10	RBSOA
				MTP12N10	L = 200 μH
					L = 200 μH			IB2
500 μF		MJE210			RB2 = 0			IB2
500 μF					VCC = 20 Volts
	150 Ω		1 μF		VCC = 20 Volts		*IC
	150 Ω		1 μF		R selected for desired I		*IC
					B1	B1		L
								L
Voff						A	T.U.T.
*Tektronix AM503	Scope Ð Tektronix			Lcoil (ICpk)		A	T.U.T.	1N4246GP
*Tektronix AM503	Scope Ð Tektronix		t1 [	Lcoil (ICpk)	T1	+ V		1N4246GP
*P6302 or Equivalent	7403 or Equivalent		t1 [	VCC	T1	+ V	*IB
			T1 adjusted to obtain IC(pk)		0 V			Vclamp	VCC

Note: Adjust Voff to obtain desired VBE(off) at Point A.		± V

Table 2. Resistive Load Switching

+15

H.P. 214

td and tr

ts and tf

1 μF

150 Ω

100 Ω

100 μF

MTP8P10

*IC

EQUIV.

*IB

P.G.

V(off) adjusted

RB1

T.U.T.

MPF930

RB = 8.5 Ω

to give specified

off drive

+10 V

MPF930

VCC

RB2

MUR105

50 Ω

VCC

250 V

MTP12N10

VCC

250 Vdc

10 A

500 μF

MJE210

IB1

1.0 A

1 μF

≈ 11 V

150 Ω

IB2

Per Spec

10 A

Voff

0 V

RB1

15 Ω

1 A

tr ≤ 15 ns

Per Spec

T.U.T.

*IC

*Tektronix AM503

25 Ω

*IB

VCC

*P6302 or Equivalent

MEASURED FROM THE 90% POINT OF IB1

(t = 0)

(VOLTS)

= 10 A

VCE(dsat) = DYNAMIC SATURATION VOLTAGE AND IS

TO A MEASUREMENT POINT ON THE

t = 1

TIME AXIS (t1, t2 or t3 etc.)

VOLTAGE

COLLECTOR±EMITTER,

t = 2 μs

90% IB1

IB1

MAXIMUM

TYPICAL

0.5

1.5

2.5

t, TIME

IB, BASE CURRENT (AMPS)

Figure 11. Definition of Dynamic Saturation

Figure 12. Dynamic Saturation Voltage

Measurement

Motorola Bipolar Power Transistor Device Data

MJ16110 MJW16110

DYNAMIC SATURATION VOLTAGE

For bipolar power transistors low DC saturation voltages are achieved by conductivity modulating the collector region. Since conductivity modulation takes a finite amount of time, DC saturation voltages are not achieved instantly at turn±on. In bridge circuits, two transistor forward converters, and two transistor flyback converters dynamic saturation characteristics are responsible for the bulk of dynamic losses. The MJ16110 has been designed specifically to minimize these losses. Performance is roughly four times better than the original version of MJ16010.

From a measurement point of view, dynamic saturation voltage is defined as collector±emitter voltage at a specific point in time after IB1 has been applied, where t = 0 is the 90% point on the IB1 rise time waveform, This definition is illustrated in Figure 11. Performance data was taken in the circuit that is shown in Figure 13. The 24 volt rail allows a Tektronix 2445 or equivalent scope to operate at 1 volt per division without input amplifier saturation.

Dynamic saturation performance is illustrated in Figure 12. The MJ16110 reaches DC saturation levels in approximately 2 μs, provided that sufficient base drive is provided. The dependence of dynamic saturation voltage upon base drive suggests a spike of IB1 at turn±on to minimize dynamic saturation losses, and also avoid overdrive at turn±off. However, in order to simulate worst case conditions the guaranteed dynamic saturation limits in this data sheet are specified with a constant level of IB1.

+ 24
				Q1	MJ11012
1 k			1N5314
1 k
		4	8		100	2.4	Ω	0.01	μF
		4	8		μF	20 W		0.01	μF
				1N4111	μF	20 W
1 k	7			1N4111		100 Ω			2.4 mH	1N5831
	7					1 W
						1 W
10 k		U1
	6	MC1455		100 pF	Q4			Q5
	6	(OSCILLATOR)		100 pF	Q4			Q5
	2	(OSCILLATOR)		3	IRFD9120			MTM8P08
	2
0.1 μF		1	5					10 μF
0.1 μF			0.01 μF					10 μF		I C
										I C
						47 Ω
		4	8	1.8 k		1 W		MUR405	I B
1N914					IRFD9123	500 Ω				V CE
1N914				7		500 Ω		MUR405		V CE
10	k			6	Q2
				6
	2							Q6
								MTP25N06
				3	Q3
					Q3
		1	5		IRFD113
				0.01 μF
			0.01 μF

Figure 13. Dynamic Saturation Test Circuit

GUARANTEED SAFE OPERATING AREA INFORMATION

IC, COLLECTOR CURRENT (AMPS)

50	TC = 25°C
20	MJ16110		10 μs
10	MJ16110		10 μs
10
5	MJW16110
3	REGION II Ð
2	REGION II Ð			100
2	EXPANDED FBSOA USING
1
				ns
	MUR870 ULTRA-FAST		1 ms	ns
0.5	MUR870 ULTRA-FAST	dc	1 ms
0.5	RECTIFIER, SEE FIGURE 16	dc
0.3				II
0.2				II
0.2

0.1BONDING WIRE LIMIT

0.05THERMAL LIMIT

0.03SECONDARY BREAKDOWN

0.02LIMIT

0.01

1	2	3	5	10	20	30	50	100	200 300	500	1000
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

	20
(AMPS)	18
	16						IC/IB1 = 5
	14						TJ ≤ 100°C
CURRENT	14						TJ ≤ 100°C
	12
	10
, COLLECTOR	10
	8
	6					VBE(off) = 1 to 5 V
	4
C
I	2				VBE(off) = 0 V
	2				VBE(off) = 0 V
	0	100	200	300	400	500	600	700
	0	100	200	300	400	500	600	700
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 14. Forward Bias Safe Operating Area				Figure 15. Reverse Bias Safe Operating Area
+15						VCE (650 V MAX)
+15
1 μF	150 Ω 100 Ω	100 μF
		MTP8P10			10 μF
		MTP8P10		MTP8P10		10 mH	MUR870
				RB1	MUR1100
	MPF930				MUR1100
	MPF930
+10				MUR105
+10	MPF930					T.U.T.
	MPF930					T.U.T.
50 Ω		MUR105		RB2
		MUR105

				MTP12N10
	500 μF	MJE210
	500 μF
	150 Ω	1	μF		Note: Test Circuit for Ultra±fast FBSOA
	150 Ω				Note: Test Circuit for Ultra±fast FBSOA
					Note: RB2 = 0 and VOff = ± 5 Volts
VOff

Figure 16. Switching Safe Operating Area

6	Motorola Bipolar Power Transistor Device Data

MJ16110 MJW16110

	100			SECOND BREAKDOWN
				SECOND BREAKDOWN
(%)	80			DERATING
(%)
FACTOR
FACTOR	60
DERATING	60
		THERMAL
	40	DERATING

POWER	20	MJ16110
	20	MJW16110


	0	40	80	120	160	200
	0	40	80	120	160	200
		TC, CASE TEMPERATURE (°C)

Figure 17. Power Derating

		1
EFFECTIVE TRANSIENT THERMAL		0.7	D = 0.5
		0.5	D = 0.5
		0.5
	RESISTANCE (NORMALIZED)	0.3	0.2
		0.2	0.2
		0.2
		0.1	0.1														P(pk)
		0.1															P(pk)
		0.07									RθJC(t) = r(t) RθJC
		0.05	0.03								RθJC = 1 or 0.92°CW
			0.03								TJ(pk) ± TC = P(pk) RθJC(t)						t1
		0.03									TJ(pk) ± TC = P(pk) RθJC(t)
		0.03																t2
		0.02	0.02															t2
r(t),		0.02	0.02														DUTY CYCLE, D = t1/t2
r(t),			SINGLE PULSE
		0.01	SINGLE PULSE
		0.01
		0.01	0.02 0.03	0.05	0.1	0.2	0.3	0.5	1	2	3	5	10	20	30	50	100	200	300	500	1000

t, TIME (ms)

Figure 18. Thermal Response

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data in Figure 14 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 14 may be found at any case temperature by using the appropriate curve on Figure 17.

TJ(pk) may be calculated from the data in Figure 18. At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be sustained simultaneously during turn±off, in most cases, with the base±to±emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be

accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Biased Safe Operating Area and represents the voltage±current condition allowable during reverse biased turn±off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 15 gives the RBSOA characteristics.

SWITCHMODE DESIGN CONSIDERATIONS

FBSOA

Allowable dc power dissipation in bipolar power transistors decreases dramatically with increasing collector±emitter voltage. A transistor which safely dissipates 100 watts at 10 volts will typically dissipate less than 10 watts at its rated

V(BR)CEO(sus). From a power handling point of view, current and voltage are not interchangeable (see Application Note

AN875).

TURN±ON

Safe turn±on load line excursions are bounded by pulsed FBSOA curves. The 10 μs curve applies for resistive loads, most capacitive loads, and inductive loads that are clamped by standard or fast recovery rectifiers. Similarly, the 100 ns curve applies to inductive loads which are clamped by ultra± fast recovery rectifiers, and are valid for turn±on crossover times less than 100 ns (AN952).

Motorola Bipolar Power Transistor Device Data

MJ16110 MJW16110

SWITCHMODE DESIGN CONSIDERATIONS (Cont.)

At voltages above 75% of V(BR)CEO(sus), it is essential to provide the transistor with an adequate amount of base

drive VERY RAPIDLY at turn±on. More specifically, safe operation according to the curves is dependent upon base current rise time being less than collector current rise time. As a general rule, a base drive compliance voltage in excess of 10 volts is required to meet this condition (see Application Note AN875).

TURN±OFF

A bipolar transistor's ability to withstand turn±off stress is dependent upon its forward base drive. Gross overdrive violates the RBSOA curve and risks transistor failure. For this reason, circuits which use fixed base drive are more likely to fail at light loads due to heavy overdrive (see Application Note AN875).

OPERATION ABOVE V(BR)CEO(sus)

When bipolars are operated above collector±emitter breakdown, base drive is crucial. A rapid application of adequate forward base current is needed for safe turn±on, as is a stiff negative bias needed for safe turn±off. Any hiccup in the base±drive circuitry that even momentarily violates either of these conditions will likely cause the transistor to fail.

Therefore, it is important to design the driver so that its output is negative in the absence of anything but a clean crisp input signal (see Application Note AN952).

RBSOA

Reversed Biased Safe Operating Area has a first order dependency on circuit configuration and drive parameters. The RBSOA curves in this data sheet are valid only for the conditions specified. For a comparison of RBSOA results in several types of circuits (see Application Note AN951).

DESIGN SAMPLES

Transistor parameters tend to vary much more from wafer lot to wafer lot, over long periods of time, than from one device to the next in the same wafer lot. For design evaluation it is advisable to use transistors from several different date codes.

BAKER CLAMPS

Many unanticipated pitfalls can be avoided by using Baker Clamps. MUR105 and MUR170 diodes are recommended for base drives less than 1 amp. Similarly, MUR405 and MUR470 types are well±suited for higher drive requirements (see Article Reprint AR131).

8	Motorola Bipolar Power Transistor Device Data

MJ16110 MJW16110

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

±T±

SEATING

2. CONTROLLING DIMENSION: INCH.

PLANE

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO±204AA OUTLINE SHALL APPLY.

D 2 PL

INCHES

MILLIMETERS

0.13 (0.005) M

DIM

MIN

MAX

MIN

MAX

1.550 REF

39.37 REF

±Y±

±±±

1.050

±±±

26.67

0.250

0.335

6.35

8.51

0.038

0.043

0.97

1.09

0.055

0.070

1.40

1.77

0.430 BSC

10.92 BSC

0.215 BSC

5.46 BSC

0.440

0.480

11.18

12.19

0.665 BSC

16.89 BSC

±Q±

±±±

0.830

±±±

21.08

0.13 (0.005) M

0.151

0.165

3.84

4.19

1.187 BSC

30.15 BSC

0.131

0.188

3.33

4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

CASE 1±07

TO±204AA

(FORMERLY TO±3)

ISSUE Z

						NOTES:
					±T±	1.	DIMENSIONING AND TOLERANCING PER ANSI
	±Q±				±T±	Y14.5M, 1982.
	±Q±				E	Y14.5M, 1982.
0.25 (0.010) M T	B	M			E	2.	CONTROLLING DIMENSION: MILLIMETER.
0.25 (0.010) M T	B	M	±B±		C			MILLIMETERS		INCHES
			±B±

						4	DIM MIN		MAX	MIN	MAX
						4	A	20.40	20.90	0.803	0.823
				U			A	20.40	20.90	0.803	0.823
				U	L		B	15.44	15.95	0.608	0.628
					L		C	4.70	5.21	0.185	0.205
							C	4.70	5.21	0.185	0.205
	A						D	1.09	1.30	0.043	0.051
	A	R					E	1.50	1.63	0.059	0.064
		R					F	1.80	2.18	0.071	0.086
		1	2	3			G	5.45 BSC		0.215 BSC
		1	2	3			H	2.56	2.87	0.101	0.113
							J	0.48	0.68	0.019	0.027
					±Y±		K	15.57	16.08	0.613	0.633
	K	P			±Y±		L	7.26	7.50	0.286	0.295
	K	P					P	3.10	3.38	0.122	0.133
							Q	3.50	3.70	0.138	0.145
							R	3.30	3.80	0.130	0.150
		F			H		U	5.30 BSC		0.209 BSC
		F		V	H		V	3.05	3.40	0.120	0.134
				V	J
		D			J
		D	G				STYLE 3:
0.25 (0.010) M	Y	Q S	G					PIN 1. BASE
0.25 (0.010) M	Y	Q S						2. COLLECTOR
								2. COLLECTOR
								3. EMITTER
								4. COLLECTOR

CASE 340F±03

TO±247AE

ISSUE E

Motorola Bipolar Power Transistor Device Data

MJ16110 MJW16110

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
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◊ MJ16110/D

*MJ16110/D*

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