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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJE16002/D

Designer's Data Sheet

SWITCHMODE Series

NPN Silicon Power Transistors

These transistors are designed for high±voltage, high±speed switching of inductive circuits where fall time and RBSOA are critical. They are particularly well±suited for line±operated switchmode applications.

The MJE16004 is a high±gain version of the MJE16002 and MJH16002 for applications where drive current is limited.

Typical Applications:

•Switching Regulators

•High Resolution Deflection Circuits

•Inverters

•Motor Drives

•Fast Switching Speeds

50 ns Inductive Fall Time @ 75_C (Typ) 70 ns Crossover Time @ 75_C (Typ)

• 100_C Performance Specified for: Reverse±Biased SOA Inductive Switching Times Saturation Voltages

Leakage Currents

MAXIMUM RATINGS

MJE16002* MJE16004*

*Motorola Preferred Device

5.0 AMPERE

NPN SILICON

POWER TRANSISTORS

450 VOLTS

80 WATTS

CASE 221A±06

TO±220AB

Rating	Symbol	Value	Unit

Collector±Emitter Voltage	VCEO(sus)	450	Vdc
Collector±Emitter Voltage	VCEV	850	Vdc
Emitter±Base Voltage	VEB	6.0	Vdc
Collector Current Ð Continuous	IC	5.0	Adc
Ð Peak (1)	ICM	10
Base Current Ð Continuous	IB	4.0	Adc
Ð Peak (1)	IBM	8.0
Total Power Dissipation @ TC = 25_C	PD	80	Watts
@ TC = 100_C		32
Derate above TC = 25_C		0.64	W/_C
Operating and Storage Junction Temperature Range	TJ, Tstg	± 65 to +150	_C
THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RqJC	1.56	_C/W
Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds	TL	275	_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Designer's and SWITCHMODE are trademarks of Motorola, Inc.

REV 2

Motorola, Inc. 1995

MJE16002

MJE16004

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS (1)

Collector±Emitter Sustaining Voltage (Table 2)

VCEO(sus)

450

Vdc

(IC = 100 mA, IB = 0)

Collector Cutoff Current

ICEV

mAdc

(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc)

0.25

(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C)

1.5

Collector Cutoff Current

ICER

2.5

mAdc

(VCE = 850 Vdc, RBE = 50 Ω, TC = 100_C)

Emitter Cutoff Current

IEBO

1.0

mAdc

(VEB = 6.0 Vdc, IC = 0)

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

IS/b

See Figure 17 or 18

Clamped Inductive SOA with Base Reverse Biased

RBSOA

See Figure 19

ON CHARACTERISTICS (1)

Collector±Emitter Saturation Voltage

VCE(sat)

Vdc

(IC = 1.5 Adc, IB = 0.2 Adc)

MJE16002

1.0

(IC = 1.5 Adc, IB = 0.15 Adc)

MJE16004

1.0

(IC = 3.0 Adc, IB = 0.4 Adc)

MJE16002

2.5

(IC = 3.0 Adc, IB = 0.3 Adc)

MJE16004

2.5

(IC = 3.0 Adc, IB = 0.4 Adc, TC = 100_C)

MJE16002

2.5

(IC = 3.0 Adc, IB = 0.3 Adc, TC = 100_C)

MJE16004

2.5

Base±Emitter Saturation Voltage

VBE(sat)

Vdc

(IC = 3.0 Adc, IB = 0.4 Adc)

MJE16002

1.5

(IC = 3.0 Adc, IB = 0.3 Adc)

MJE16004

1.5

(IC = 3.0 Adc, IS = 0.4 Adc, TC = 100_C)

MJE16002

1.5

(IC = 3.0 Adc, IB = 0.3 Adc, TC = 100_C)

MJE16004

1.5

DC Current Gain

hFE

(IC = 5.0 Adc, VCE = 5.0 Vdc)

MJE16002

5.0

MJE16004

7.0

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

200

(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

MJE16002/MJH10002

Delay Time

100

Rise Time

(IC = 3.0 Adc,

(IB2 = 0.8 Adc,

100

300

Storage Time

VCC = 250 Vdc,

RB2 = 8.0 Ω)

1000

3000

IB1 = 0.4 Adc,

Fall Time

300

PW = 30 μs,

Storage Time

Duty Cycle v 2.0%)

(VBE(off) = 5.0 Vdc)

400

Fall Time

130

Resistive Load (Table 1)

MJE16004/MJH16004

Delay Time

100

Rise Time

(IC = 3.0 Adc,

(IB2 = 0.6 Adc,

130

300

Storage Time

VCC = 250 Vdc,

RB2 = 8.0 Ω)

800

2700

IB1 = 0.3 Adc,

Fall Time

350

PW = 30 μs,

Storage Time

Duty Cycle v 2.0%)

(VBE(off) = 5.0 Vdc)

250

Fall Time

(1) Pulse Test: PW = 300 μs, Duty Cycle v 2%.

*β

IB1

2	Motorola Bipolar Power Transistor Device Data

MJE16002 MJE16004

SWITCHING CHARACTERISTICS (continued)

	Characteristics		Symbol	Min	Typ	Max	Unit

Inductive Load (Table 2)	MJE16002

Storage Time			tsv	Ð	500	1600	ns
Fall Time	(IC = 3.0 Adc,	(TJ = 100_C)	tfi	Ð	100	200
Crossover Time	(IC = 3.0 Adc,		tc	Ð	120	250
Crossover Time	IB1 = 0.4 Adc,		tc	Ð	120	250
Storage Time	VBE(off) = 5.0 Vdc,		tsv	Ð	600	Ð
	VCE(pk) = 400 Vdc)
Fall Time	VCE(pk) = 400 Vdc)	(TJ = 150_C)	tfi	Ð	120	Ð
Fall Time		(TJ = 150_C)	tfi	Ð	120	Ð
Crossover Time			tc	Ð	160	Ð
Inductive Load (Table 2)	MJE16004

Storage Time			tsv	Ð	400	1300	ns
Fall Time	(IC = 3.0 Adc,	(TJ = 100_C)	tfi	Ð	80	150
Crossover Time	(IC = 3.0 Adc,		tc	Ð	90	200
Crossover Time	IB1 = 0.3 Adc,		tc	Ð	90	200
Storage Time	VBE(off) = 5.0 Vdc,		tsv	Ð	450	Ð
	VCE(pk) = 400 Vdc)
Fall Time		(TJ = 150_C)	tfi	Ð	100	Ð


Crossover Time			tc	Ð	110	Ð

(1) Pulse Test: PW = 300 μs, Duty Cycle v 2%.
*β	=	IC
f		IB1
		IB1
		60
		50
GAIN		30					TJ = 100°C
GAIN		20
CURRENT		20
								25°C
		10
DC		10						± 55°C
DC								± 55°C
,
FE		7.0
h
		5.0	VCE = 5.0 V
		3.0					1.0		3.0		7.0
		0.1	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10
				IC, COLLECTOR CURRENT (AMPS)

(VOLTS)	2.0
(VOLTS)			IC = 1 A		2 A		3 A 4 A		5 A
VOLTAGE	1.0		IC = 1 A		2 A		3 A 4 A		5 A
	1.0
	0.7

, COLLECTOR±EMITTER	0.5
	0.3
	0.2	TJ = 25°C
CE	0.1
V	0.1	0.05	0.07	0.1	0.2	0.3	0.5	0.7	1.0	2.0	3.0
	0.03	0.05	0.07	0.1	0.2	0.3	0.5	0.7	1.0	2.0	3.0
					IB, BASE CURRENT (AMPS)

Figure 1. DC Current Gain

Figure 2. Collector Saturation Region

VOLTAGE (VOLTS)	5.0							3.0
	3.0						VOLTAGE(VOLTS)
	2.0							2.0
	1.0			βf = 10				1.5
	1.0			βf = 10
				TJ = 100°C
,COLLECTOR±EMITTER	0.5		βf = 10				BASE±EMITTER	1.0	βf = 5	°
			TJ = 25°C						TJ = 25	°
									TJ = 25	C
	0.2				β	= 5		0.7				βf = 10	°
	0.2				β	= 5						TJ = 100	°
					f							TJ = 100	C
					TJ = 25°C			0.5
	0.1						,
	0.1						BE
							BE
							V
CE	0.05							0.3
V	0.05	0.2	0.5	1.0	2.0	5.0	10	0.3	0.2	0.5	1.0	2.0	5.0	10
	0.1	0.2	0.5	1.0	2.0	5.0	10	0.1	0.2	0.5	1.0	2.0	5.0	10

IC, COLLECTOR CURRENT (AMPS)	IC, COLLECTOR CURRENT (AMPS)
Figure 3. Collector±Emitter Saturation Region	Figure 4. Base±Emitter Voltage

Motorola Bipolar Power Transistor Device Data	3

MJE16002			MJE16004
					TYPICAL STATIC CHARACTERISTICS (continued)
	104								10000
A)	3											TJ = 25°C
μ	10									Cib
(										Cib
CURRENTCOLLECTOR,		TJ = 150°C						CAPACITANCEC,(pF)	1000
CURRENTCOLLECTOR,	0	REVERSE			FORWARD			CAPACITANCEC,(pF)
	102		125°C
			100°C
	101		75°C						100			Cob
									100			Cob
C	10
I
	10±1		25°C			VCE = 250 Vdc			10
	10±1		± 0.2	0	+ 0.2	+ 0.4	+ 0.6		10	1.0	10	100	850
	± 0.4		± 0.2	0	+ 0.2	+ 0.4	+ 0.6		0.1	1.0	10	100	850
			VBE, BASE±EMITTER VOLTAGE (VOLTS)							VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Collector Cutoff Region

Figure 6. Capacitance

TYPICAL DYNAMIC CHARACTERISTICS

	10000
	5000
(ns)				VBE(off) = 0 V
TIME	2000
TIME				VBE(off) = 2.0 V
STORAGE				VBE(off) = 2.0 V
	1000
	500				VBE(off) = 5.0 V
,
sv		βf = 5
t

	200	TJ = 75°C
		VCC = 20 V
	100
	0.5	0.7	1.0	2.0	3.0	5.0

IC, COLLECTOR CURRENT (AMPS)

Figure 7. Storage Time

	10000
	5000
(ns)
TIME	2000			VBE(off) = 0 V
TIME				VBE(off) = 0 V
STORAGE	1000			VBE(off) = 2.0 V
				VBE(off) = 2.0 V
	500
,
sv		β			VBE(off) = 5.0 V
t			= 10
			= 10
		f
	200	TJ = 75°C
		VCC = 20 V
	100				3.0
	0.5	0.7	1.0	2.0	3.0	5.0
			IC, COLLECTOR CURRENT (AMPS)

Figure 8. Storage Time

1000

(ns)

500

± 2.0 V

(ns)

500

± 2.0 V

TIME

0 V

± 5.0 V

FALL

VBE(off) = 0 V

200

VBE(off) = 0 V

200

± 5.0 V

CURRENT

100

0 V

,COLLECTOR

βf = 5

VBE(off) = 2.0 V

,COLLECTOR

= 10

= 2.0 V

BE(off)

TJ = 75 C

VBE(off) = ± 5.0 V

TJ = 75°C

VCC = 20 V

VBE(off) = 5.0 V

= 20 V

0.5

0.7

1.0

2.0

3.0

5.0

0.5

0.7

1.0

2.0

3.0

5.0

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Collector Current Fall Time

Figure 10. Collector Current Fall Time

4	Motorola Bipolar Power Transistor Device Data

MJE16002 MJE16004

TYPICAL DYNAMIC CHARACTERISTICS (continued)

	1000		± 2.0 V					1000
	500		± 2.0 V							± 2.0 V
	500							500		± 2.0 V
								500
(ns)					VBE(off) = 0 V		(ns)				VBE(off) = 0 V
TIME	200				VBE(off) = 0 V		TIME	200			VBE(off) = 0 V
	200	0 V						200

CROSSOVER			± 5.0 V				CROSSOVER		0 V
	100								0 V
								100		± 5.0 V
								100		± 5.0 V
	50			VBE(off) = 2.0 V				50
				VBE(off) = 2.0 V
,							,
c		βf = 5					c		βf = 10		VBE(off) = 2.0 V
t					V	= 5.0 V	t
					V	= 5.0 V
	20	TJ = 75°C			BE(off)			20	TJ = 75°C
	10	VCC = 20 V						10	VCC = 20 V			VBE(off) = 5.0 V
	10							10			2.0	3.0
	0.5	0.7	1.0	2.0	3.0	5.0		0.5	0.7	1.0	2.0	3.0	5.0

IC, COLLECTOR CURRENT (AMPS)	IC, COLLECTOR CURRENT (AMPS)
Figure 11. Crossover Time	Figure 12. Crossover Time

TYPICAL ELECTRICAL CHARACTERISTICS

IC pk

(AMPS)

5.0

VCE(pk)

90% VCE(pk)

90% IC(pk)

4.0

CURRENT

3.0

IB1 = 0.6 A

IB1 = 0.3 A

tsv

trv

tfi

tti

VCE

BASE

10% VCE(pk)

10%

REVERSE,

2.0

90% IB1

2% IC

IC = 3.0 A

IC pk

1.0

TJ = 25°C

TIME

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

VBE(off), REVERSE BASE VOLTAGE (VOLTS)

Figure 13. Inductive Switching Measurements

Figure 14. Peak Reverse Base Current

(NORMALIZED)	1
	0.7	D = 0.5
	0.5	D = 0.5
	0.5

RESISTANCE	0.3		0.2
	0.2		0.2
	0.2
	0.1		0.1										P(pk)
	0.1								RθJC(t) = r(t) RθJC
THERMAL			0.05
	0.07
	0.07								RθJC = 156°C/W MAX
	0.05								RθJC = 156°C/W MAX
	0.05		0.02						D CURVES APPLY FOR POWER
			0.02						D CURVES APPLY FOR POWER				t1
TRANSIENT	0.03	0.01							PULSE TRAIN SHOWN				t1	t2
	0.02	0.01							READ TIME AT t1					t2
	0.02								TJ(pk) ± TC = P(pk) RθJC(t)				DUTY CYCLE, D = t1/t2
			SINGLE PULSE						TJ(pk) ± TC = P(pk) RθJC(t)
	0.01		SINGLE PULSE

r(t),
r(t),	0.01	0.02	0.05	0.1	0.2	0.5	1	2	5	10	20	50	100	200	500	1 k

t, TIME (ms)

Figure 15. Thermal Response (MJE16002 and MJE16004)

Motorola Bipolar Power Transistor Device Data

MJE16002 MJE16004

SAFE OPERATING AREA INFORMATION

	10									10 μs		10
	5.0									10 μs	, COLLECTOR CURRENT (AMPS)	9.0
,COLLECTOR CURRENT (AMPS)	5.0											9.0
	2.0								1.0 ms			8.0
	2.0
												7.0
	1.0	TC = 25°C										7.0
	1.0
	0.5											6.0
	0.5				dc							6.0
					dc							5.0
	0.2											5.0
	0.2											4.0
	0.1											4.0
	0.1											3.0
												3.0
	0.05			BONDING WIRE LIMIT								2.0
C	0.02			THERMAL LIMIT							C(pk)	1.0
C				SECOND BREAKDOWN LIMIT							C(pk)
I				SECOND BREAKDOWN LIMIT							I
	0.01	7.0	10								450	0
	5.0	7.0	10	20	30	50	70	100	200	300	450

				βf ≥	4
				TJ ≤ 100°C
		VBE(off) = 0 V		VBE(off) = 1.0 to 5.0 V
0	100	200	500	700	850	1000

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)	VCE(pk), PEAK COLLECTOR±EMITTER VOLTAGE (VOLTS)
Figure 16. Maximum Rated Forward Bias	Figure 17. Maximum Rated Reverse Bias
Safe Operating Area (MJE16002 and MJE16004)	Safe Operating Area

	1.0
					SECOND BREAKDOWN
FACTOR	0.8					DERATING
FACTOR	0.6
DERATING	0.6
			THERMAL
	0.4		DERATING
POWER	0.2
	0	40	60	80	100	120	140	160
	20	40	60	80	100	120	140	160
			TC, CASE TEMPERATURE (°C)

Figure 18. Power Derating

6	Motorola Bipolar Power Transistor Device Data

MJE16002 MJE16004

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 16 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figures 17 and 18 may be found at any case temperature by using the appropriate curve on Figure 20.

TJ(pk) may be calculated from the data in Figure 15. At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be sustained simultaneously during turn±off, in most cases, with the base±to±emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe 0perating Area and represents the voltage±current condition allowable pulling reverse biased turn±off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 17 gives the RBSOA characteristics.

Table 1. Resistive Load Switching

	td and tr			ts and tf				+ Vdc ≈ 11 Vdc
H.P. 214			0 V		20 100			2N6191
H.P. 214
or Equiv.		*IC	≈ ± 35 V
or Equiv.		*IC	≈ ± 35 V	+
P.G.	*IB			+
	*IB			± 10 μF	0.02		μF	RB1
			H.P. 214		0.02		μF
		T.U.T.	H.P. 214						A
		T.U.T.	or Equiv.
RB = 33 Ω		RL	or Equiv.
		RL	P.G.	0.02 μF				RB2
			P.G.	0.02 μF
50		VCC		1.0 μF
50		VCC		1.0 μF
			50					2N5337
		VCC = 250 Vdc		500		100
		VCC = 250 Vdc
		RL = 83 Ω						± V
		IC = 3.0 Adc	+ V
		IB = 0.3 Adc	+ V
≈ 11 V		IB = 0.3 Adc	0 V	± 5 V
Vin				± 5 V
Vin				T.U.T.
0 V			A	T.U.T.			*IC		RL
0 V	≤ 15 ns						*IC		RL
tr	≤ 15 ns		50	*IB					VCC
			50	*IB

*Tektronix							RB1 = 33 Ω
*P±6042 or			VCC = 250	IB1 = 0.3 Adc			RB1 = 33 Ω
*Equivalent			RL = 83 Ω	IB2 = 0.6 Adc			RB2 = 8.0 Ω
			IC = 3.0 Adc	For VBE(off) = 5.0 V			RB2 = 0 Ω

Note: Adjust ±V to obtain desired VBE(off) at Point A.

Motorola Bipolar Power Transistor Device Data

MJE16002 MJE16004

Table 2. Inductive Load Switching
	0.02 μF		+ V ≈ 11 V
	0.02 μF		100
H.P. 214
or Equiv.			2N6191
P.G.			2N6191
P.G.	20
	20
0	+
0	10 μF		RB1
≈ ± 35 V	±		RB1
≈ ± 35 V			A
	0.02 μF		RB2
	1.0 μF
50	+	±	2N5337
	500
			100
			± V

+ V

0 V

± V

T1 [	Lcoil (ICpk)	50	*IB
T1 [	V	50
	CC

T1 adjusted to obtain IC(pk)

VCEO(sus)	Inductive Switching
L = 10 mH	L = 200 μH
RB2 = ∞	RB2 = 0
VCC = 20 Volts	VCC = 20 Volts
	RB1 selected for desired IB1
*Tektronix	Scope Ð Tektronix
*P±6042 or	7403 or
*Equivalent	Equivalent

IC(pk)

		IC
		VCE(pk)
	*IC	V
	L	CE
	L
	T.U.T.	IB1
	MR856	IB1
	MR856
		IB
	Vclamp	VCC

IB2

RBSOA

L = 200 μH

RB2 = 0

VCC = 20 Volts

RB1 selected for desired IB1

Note: Adjust ±V to obtain desired VBE(off) at Point A.

TYPICAL INDUCTIVE SWITCHING WAVEFORMS

tsv

IC(pk) = 3.0 Amps

IB1 = 0.3 Amp

VBE(off) = 5.0 Volts

VCE(pk) = 300 Volts

TC = 25°C

Time Base =

20 ns/cm

IC(pk) = 3.0 Amps

IB1 = 0.3 Amp

VBE(off) = 5.0 Volts

VCE(pk) = 300 Volts

TC = 25°C

Time Base =

20 ns/cm

tfi, tc

8	Motorola Bipolar Power Transistor Device Data

MJE16002 MJE16004

PACKAGE DIMENSIONS

				±T±
	B		F	C
			T	S
4
Q			A
1	2	3	U
H
Z			K
Z
L				R
V				J
G
			D
	N

SEATING PLANE

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.570	0.620	14.48	15.75
B	0.380	0.405	9.66	10.28
C	0.160	0.190	4.07	4.82
D	0.025	0.035	0.64	0.88
F	0.142	0.147	3.61	3.73
G	0.095	0.105	2.42	2.66
H	0.110	0.155	2.80	3.93
J	0.018	0.025	0.46	0.64
K	0.500	0.562	12.70	14.27
L	0.045	0.060	1.15	1.52
N	0.190	0.210	4.83	5.33
Q	0.100	0.120	2.54	3.04
R	0.080	0.110	2.04	2.79
S	0.045	0.055	1.15	1.39
T	0.235	0.255	5.97	6.47
U	0.000	0.050	0.00	1.27
V	0.045	±±±	1.15	±±±
Z	±±±	0.080	±±±	2.04

STYLE 1:

PIN 1. BASE

2.COLLECTOR

3.EMITTER

4.COLLECTOR

CASE 221A±06

TO±220AB

ISSUE Y

Motorola Bipolar Power Transistor Device Data

MJE16002 MJE16004

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

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◊ MJE16002/D

*MJE16002/D*

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