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BD787REV

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BD787/D

Complementary Plastic Silicon

Power Transistors

. . . designed for lower power audio amplifier and low current, high±speed switching applications.

• Low Collector±Emitter Sustaining Voltage Ð VCEO(sus) 60 Vdc (Min) Ð BD787, BD788

•High Current±Gain Ð Bandwidth Product Ð fT = 50 MHz (Min) @ IC = 100 mAdc

•Collector±Emitter Saturation Voltage Specified at 0.5, 1.0, 2.0 and 4.0 Adc

MAXIMUM RATINGS

		BD787
Rating	Symbol	BD788	Unit

Collector±Emitter Voltage	VCEO	60	Vdc
Collector±Base Voltage	VCBO	80	Vdc
Emitter±Base Voltage	VEBO	6.0	Vdc
Collector Current Ð Continous		4.0	Adc
Ð Peak	IC	8.0	Adc
Base Current	IB	1.0	Adc
Total Power Dissipation @ TC = 25°C		15	Watts
Derate Above 25_C	PD	0.12	W/_C
Operating and Storage Junction	TJ, Tstg	± 65 to +150	_C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RθJC	8.34	_C/W

NPN

BD787

PNP

BD788

4 AMPERE

POWER TRANSISTORS COMPLEMENTARY SILICON

60 VOLTS

15 WATTS

CASE 77±08

TO±225AA TYPE

		16							1.6
										P
	POWERDISSIPATION (WATTS)									D
		12							1.2	DISSIPATION POWER ,
C		8.0							0.8		T
T		8.0							0.8		A
T		4.0							0.4		A
	,									(WATTS)
	D									(WATTS)
	P
		0	40	60	80	100	120	140	0
		20	40	60	80	100	120	140	160

T, TEMPERATURE (°C)

Figure 1. Power Derating

REV 7

Motorola, Inc. 1995

BD787		BD788
	*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

		Characteristic		Symbol	Min	Max	Unit

	OFF CHARACTERISTICS

	Collector±Emitter Sustaining Voltage (1)			VCEO(sus)	60	Ð	Vdc
	(IC = 10 mAdc, IB = 0)
	Collector Cutoff Current			ICEO	Ð	100	μAdc
	(VCE = 20 Vdc, IB = 0)
	(VCE = 30 Vdc, IB = 0)
	Collector Cutoff Current			ICEX			μAdc
	(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)				Ð	1.0	μAdc
	(VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125°C)				Ð	0.1	mAdc
	Emitter Cutoff Current			IEBO	Ð	1.0	μAdc
	(VEB = 6.0 Vdc, IC = 0)
	ON CHARACTERISTICS(1)

	DC Current Gain			hFE			Ð
	(IC = 200 mAdc, VCE = 3.0 Vdc)				40	250
	(IC = 1.0 Adc, VCE = 3.0 Vdc)				25	Ð
	(IC = 2.0 Adc, VCE = 3.0 Vdc)				20	Ð
	(IC = 4.0 Adc, VCE = 3.0 Vdc)				5.0	Ð
	Collector±Emitter Saturation Voltage			VCE(sat)			Vdc
	(IC = 500 mAdc, IB = 50 mAdc)				Ð	0.4
	(IC = 1.0 Adc, IB = 100 mAdc)				Ð	0.6
	(IC = 2.0 Adc, IB = 200 mAdc)				Ð	0.8
	(IC = 4.0 Adc, IB = 800 mAdc)				Ð	2.5
	Base±Emitter Saturation Voltage			VBE(sat)	Ð	2.0	Vdc
	(IC = 2.0 Adc, IB = 200 mAdc)
	Base±Emitter On Voltage			VBE(on)	Ð	1.8	Vdc
	(IC = 2.0 Adc, VCE = 3.0 Vdc)
	DYNAMIC CHARACTERISTICS

	Current±Gain Ð Bandwidth Product			fT	50	Ð	MHz
	(IC = 100 mAdc, VCE = 10 Vdc, f = 10 MHz)
	Output Capacitance			Cob			pF
	(VCB = 10 Vdc, IC = 0)		BD787		Ð	50
	(f = 0.1 MHz)		BD788		Ð	70

	Small±Signal Current Gain			hfe	10	Ð	Ð
	(IC = 200 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

* Indicates JEDEC Registered Data
(1)	Pulse Test; Pulse Width v 300 μs, Duty Cycle v 2.0%.
				+ 30 V		500
		25 μs		VCC		300						VCC = 30 V
				RC		300						VCC = 30 V
				RC		200						I /I	= 10
	+ 11 V											C B
	+ 11 V			SCOPE								TJ = 25°C
												TJ = 25°C
						100
	0		R	B	(ns)	100			tr
	0			B		70
			51	D1		70
		± 9.0 V	51	D1	TIME	50
						50

		tr, tf v 10 ns			t,	30
		tr, tf v 10 ns				30	td @ VBE(off) = 5.0 V
	DUTY CYCLE = 1.0%			± 4 V		20	td @ VBE(off) = 5.0 V
	DUTY CYCLE = 1.0%					20

	RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS					10		BD787 (NPN)
		D1 MUST BE FAST RECOVERY TYPE, e.g.:				10		BD787 (NPN)
		D1 MUST BE FAST RECOVERY TYPE, e.g.:				7.0		BD788 (PNP)
		1N5825 USED ABOVE IB [ 100 mA				7.0
		1N5825 USED ABOVE IB [ 100 mA				5.0
		MSD6100 USED BELOW IB [ 100 mA				0.04	0.06	0.1	0.2	0.4	0.6	1.0	2.0	4.0
		FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES.							IC, COLLECTOR CURRENT (AMP)
									IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Time Test Circuit

Figure 3. Turn±On Time

2	Motorola Bipolar Power Transistor Device Data

TRANSIENT THERMAL RESISTANCE	(NORMALIZED)
r(t),

										BD787		BD788
1.0
0.7	D = 0.5
0.5
0.3	0.2
0.2	0.1
	0.1
0.1	0.05						P(pk)		RθJC(t) = r(t) RθJC
0.07									RθJC = 8.34°C/W MAX
0.05	0.02						t1		D CURVES APPLY FOR POWER
0.03	0.01						t1	t2	PULSE TRAIN SHOWN
	0.01								READ TIME AT t1
									READ TIME AT t1
0.02	0 (SINGLE PULSE)						DUTY CYCLE, D = t1/t2		TJ(pk) ± TC = P(pk) RθJC(t)
							DUTY CYCLE, D = t1/t2
0.01	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100	200
0.02	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100	200
						t, TIME (ms)

Figure 4. Thermal Response

	10
	5.0	1.0 ms						100 μs
(AMP)	5.0							500 μs
								500 μs
	2.0			5.0 ms
CURRENT				5.0 ms

				°			dc
	1.0	TJ = 150 C
	1.0
			BONDING WIRE LIMITED
COLLECTOR	0.5		BONDING WIRE LIMITED
	0.5		THERMALLY LIMITED @ TC = 25°C
			THERMALLY LIMITED @ TC = 25°C
	0.1		(SINGLE PULSE)
	0.05		SECOND BREAKDOWN LIMITED
	0.05	CURVES APPLY BELOW RATED V
,							CEO
C
I	0.02
	0.02			BD787 (NPN) BD788 (PNP)						60 V
	0.01			BD787 (NPN) BD788 (PNP)						60 V
	0.01	2.0	3.0	5.0	7.0	10	20	30	50	70	100
	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70	100
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 5. Active Region Safe Operating Area

	2000
	1000							VCC = 30 V
	1000			ts				IC/IB = 10
	700							IB1 = IB2
	500							TJ = 25°C
(ns)	300
t, TIME	200
t, TIME	100	tf
	100	tf
	70
	50		(NPN)
	30		(NPN)
	30		(PNP)
	20	0.06	0.1	0.2	0.4	0.6	1.0	2.0	4.0
	0.04	0.06	0.1	0.2	0.4	0.6	1.0	2.0	4.0
			IC, COLLECTOR CURRENT (AMP)

Figure 6. Turn±Off Time

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C: TC is variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk) v 150_C, TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will re-

duce the power that can be handled to values less than the limitations imposed by second breakdown.

	200
									TJ = 25°C
(pF)	100				Cib
(pF)	70				Cib
CAPACITANCE	70
	50
	30				Cob
C,	20
	20
			(NPN)
	10		(PNP)
	10	2.0	3.0	5.0	7.0	10	20	30	50	70	100
	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70	100

VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

Motorola Bipolar Power Transistor Device Data

BD787		BD788
					NPN
					BD787
	400
	300		TJ = 150°C					VCE = 1.0 V
	200							VCE = 3.0 V
GAIN	200			25°C
GAIN
CURRENT	100			± 55°C
	100
	70
, DC	70
, DC	50
FE	50
FE
h
	30
	20	0.06	0.1	0.2	0.4	0.6	1.0	2.0	4.0
	0.04	0.06	0.1	0.2	0.4	0.6	1.0	2.0	4.0
				IC, COLLECTOR CURRENT (AMP)

					NPN
					BD788
	200
								VCE = 1.0 V
				°				V	= 3.0 V
GAIN	100		TJ = 150 C					CE
	100
	70			25°C
CURRENT				25°C

	50
				± 55°C
, DC	30			± 55°C
, DC	30
FE
h	20
	20
	10	0.06	0.1	0.2	0.4	0.6	1.0	2.0	4.0
	0.04	0.06	0.1	0.2	0.4	0.6	1.0	2.0	4.0
				IC, COLLECTOR CURRENT (AMP)

Figure 8. DC Current Gain

V, VOLTAGE (VOLTS)

2.0															2.0
2.0				TJ	= 25°		C								2.0			TJ	= 25°		C
1.6				TJ	= 25°		C							(VOLTS)	1.6			TJ	= 25°		C


1.2															1.2

														VOLTAGEV,

0.8		V	BE(sat)		@ I		C/IB	= 10							0.8	V	BE(sat)			@ I	C/IB	= 10
		V	BE(sat)		@ I		C/IB	= 10								V	BE(sat)			@ I	C/IB	= 10
		V	BE(on)		@ VCE = 3.0 V											V	BE @		VCE		= 3.0	V
0.4		V	BE(on)		@ VCE = 3.0 V										0.4	V	BE @		VCE		= 3.0	V
0.4	VCE(sat)				@ IC/IB = 10										0.4	V	CE(sat)		@ IC/IB = 10
0	VCE(sat)				@ IC/IB = 10										0	V	CE(sat)		@ IC/IB = 10
0			0.1			0.2			0.4	0.6	1.0	2.0	4.0		0		0.1			0.2			0.4	0.6	1.0	2.0	4.0
0.04 0.06			0.1			0.2			0.4	0.6	1.0	2.0	4.0		0.04 0.06		0.1			0.2			0.4	0.6	1.0	2.0	4.0
						IC, COLLECTOR CURRENT (AMP)														IC, COLLECTOR CURRENT (AMP)

Figure 9. ªOnº Voltages

θV, TEMPERATURE COEFFICIENTS (mV/°C)

+ 2.5

(mV/°C)

+ 2.5

*APPLIES

FOR IC/IB ≤ hFE/3

*APPLIES

FOR IC/IB ≤ hFE/3

+ 2.0

+ 1.5

COEFFICIENTS

+ 1.5

+ 1.0

θVC FOR

VCE(sat)

θVC FOR

VCE(sat)

°C

150

+ 0.5

°C

150

+ 0.5

± 55°C to 25

TEMPERATURE,

55°

to 25°C

± 0.5

± 2.0

± 55°

C to 25°C

± 0.5

± 1.0

θVB FOR

25°C to

150°C

± 1.0

θVB FOR

25°C to 150°C

± 1.5

VBE

± 1.5

VBE

± 2.0

± 55 C to

25 C

± 2.5

0.06

0.1

0.2

0.4

0.6

1.0

2.0

4.0

0.06

0.1

0.2

0.4

0.6

1.0

2.0

4.0

0.04

IC, COLLECTOR CURRENT (AMP)

Figure 10. Temperature Coefficients

4	Motorola Bipolar Power Transistor Device Data

BD787 BD788

PACKAGE DIMENSIONS

±B±
U		F	C
Q			M
		±A±	M
		±A±
1	2	3
H		K
		K

V	J
G	R
S	0.25 (0.010) M A M B M
D 2 PL

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.425	0.435	10.80	11.04
B	0.295	0.305	7.50	7.74
C	0.095	0.105	2.42	2.66
D	0.020	0.026	0.51	0.66
F	0.115	0.130	2.93	3.30
G	0.094 BSC		2.39 BSC
H	0.050	0.095	1.27	2.41
J	0.015	0.025	0.39	0.63
K	0.575	0.655	14.61	16.63
M	5	TYP	5	TYP
Q	0.148	0.158	3.76	4.01
R	0.045	0.055	1.15	1.39
S	0.025	0.035	0.64	0.88
U	0.145	0.155	3.69	3.93
V	0.040	±±±	1.02	±±±

0.25 (0.010) M A M B M	STYLE 1:
0.25 (0.010) M A M B M	PIN 1.	EMITTER
	2.	COLLECTOR
	3.	BASE

CASE 77±08

TO±225AA TYPE

ISSUE V

Motorola Bipolar Power Transistor Device Data

BD787 BD788

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
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