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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJE1320/D

Designer's Data Sheet

NPN Silicon Power Transistor

Switchmode Series

This transistor is designed for high±voltage, power switching in inductive circuits where RBSOA and breakdown voltage are critical. They are particularly suited for line±operated switchmode applications.

Typical Applications:

•Fluorescent Lamp Ballasts

•Inverters

•Solenoid and Relay Drivers

•Motor Controls

•Deflection Circuits

Features:

•High VCEV Capability (1800 Volts)

•Low Saturation Voltage

•100_C Performance Specified for: Reverse±Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages

Leakage Currents

MAXIMUM RATINGS

MJE1320

POWER TRANSISTOR

2 AMPERES

900 VOLTS

80 WATTS

CASE 221A±06

TO±220AB

Rating	Symbol	Value	Unit

Collector±Emitter Voltage	VCEO(sus)	900	Vdc
Collector±Emitter Voltage	VCEV	1800	Vdc
Emitter Base Voltage	VEB	9	Vdc
Collector Current Ð Continuous	IC	2	Adc
Peak(1)	ICM	5
Base Current Ð Continuous	IB	1.5	Adc
Peak(1)	IBM	2.5
Total Power Dissipation @ TC = 25_C	PD	80	Watts
@ TC = 100_C		32
Derate above 25_C		0.64	W/_C

Operating and Storage Junction Temperature Range	TJ, Tstg	± 65 to +150	_C

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RqJC	1.56	_C/W
Maximum Lead Temperature for Soldering	TL	275	_C
Purposes: 1/8″ from Case for 5 Seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

SWITCHMODE is a trademark of Motorola, Inc.

Motorola, Inc. 1995

MJE1320

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

		Characteristic			Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector±Emitter Sustaining Voltage					VCEO(sus)	900	Ð	Ð	Vdc
(IC = 50 mA, IB = 0)
Collector Cutoff Current					ICEV				mAdc
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)						Ð	Ð	0.25
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)						Ð	Ð	2.5
Emitter Cutoff Current					IEBO	Ð	Ð	0.25	mAdc
(VEB = 9 Vdc, IC = 0)
SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased					IS/b		See Figure 13
Clamped Inductive SOA with Base Reverse Biased					RBSOA		See Figure 14

ON CHARACTERISTICS(1)
DC Current Gain (VCE = 5 Vdc)				IC = 2 Adc	hFE	2.5	4.5	Ð	Ð
				IC = 1 Adc		3	7	Ð	Ð
Collector±Emitter Saturation Voltage					VCE(sat)				Vdc
(IC = 1 Adc, IB = 0.5 Adc)						Ð	0.18	1
(IC = 2 Adc, IB = 1 Adc)						Ð	0.3	2.5
(IC = 1 Adc, IB = 0.5 Adc, TC = 100_C)						Ð	0.3	1.5
Base±Emitter Saturation Voltage					VBE(sat)				Vdc
(IC = 1 Adc, IB = 0.5 Adc)						Ð	0.2	1.5
(IC = 2 Adc, IB = 1 Adc)						Ð	0.9	2.8
(IC = 1 Adc, IB = 0.5 Adc, TC = 100_C)						Ð	0.15	1.5
DYNAMIC CHARACTERISTICS

Output Capacitance					Cob	Ð	80	Ð	pF
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time					td	Ð	0.1	Ð	μs
Rise Time	VCC = 250 Vdc, IC = 1 A				t	Ð	0.8	Ð	μs
	IB1 = IB2 = 0.5 Adc				r
Storage Time	IB1 = IB2 = 0.5 Adc				ts	Ð	4	Ð	μs
Storage Time	t = 25 μs, Duty Cycle v 2%				ts	Ð	4	Ð	μs
	p
Fall Time					tf	Ð	0.8	Ð	μs
Inductive Load, Clamped (Table 2)

Storage Time				TC = 25_C	tsv	Ð	2.8	Ð	μs
Crossover Time	IC = 1 A, Vclamp = 400 Vdc,			TC = 25_C	tc	Ð	2.2	Ð	μs
Crossover Time					tc	Ð	2.2	Ð	μs
Storage Time					tsv	Ð	3.7	10.5	μs
Storage Time	V	= 2 Vdc, I	= 0.5 Adc		tsv	Ð	3.7	10.5	μs
	BE(off)	B1
Crossover Time				TC = 100_C	tc	Ð	3.5	10	μs
Fall Time
(1) Pulse Test: Pulse Width = 300 μs. Duty Cycle v 2%.

2	Motorola Bipolar Power Transistor Device Data

MJE1320

TYPICAL STATIC CHARACTERISTICS

	100										(VOLTS)	2.8
	70
	50											2.4
	50										VOLTAGE	2.4				2 A	2.5 A
CURRENT GAIN	30							VCE = 5 V				2	IC = 1 A			2 A	2.5 A
	30	TC = 100°C						VCE = 5 V				2
	20	TC = 100°C
	20
			25°C									1.6
	10		25°C
	7											1.2
, DC	7										COLLECTOR±EMITTER	1.2
, DC	5																	TJ = 25°C
FE	3											0.8						TJ = 25°C
h	3
h	2											0.4
											,
	1										CE	0
	1	0.07 0.1	0.2	0.3	0.5	0.7	1	2	3	5	V	0	0.2	0.3	0.5	0.7	1	2	5	7	10
	0.05	0.07 0.1	0.2	0.3	0.5	0.7	1	2	3	5		0.1	0.2	0.3	0.5	0.7	1	2	5	7	10
			IC, COLLECTOR CURRENT (AMPS)												I , BASE CURRENT (AMP)
															B

Figure 1. DC Current Gain

Figure 2. Collector Saturation Region

(VOLTS)	2
(VOLTS)
VOLTAGE	1.6		IC/IB = 2
VOLTAGE	1.2
,COLLECTOR±EMITTER	1.2
	0.8						TJ = 100°C
	0.4
								25°C
CE								25°C
CE	0
V	0				0.7
	0.25	0.3	0.4	0.5	0.7	1	1.5	2	2.5
				IC, COLLECTOR CURRENT (AMPS)

	1.3
(VOLTS)	1.1	IC/IB = 2
VOLTAGE	0.9				TJ = 25°C
VOLTAGE
BASE±EMITTER	0.7					100°C
BASE±EMITTER	0.5
,
BE
V
	0.3
	0.25 0.3	0.4	0.5	0.7	1	1.5	2	2.5
			IC, COLLECTOR CURRENT (AMPS)

Figure 3. Collector±Emitter Saturation Voltage

Figure 4. Base±Emitter Saturation Voltage

	10K
		VCE = 250 V
μA)	1K	TJ = 150°C
COLLECTOR CURRENT (		TJ = 150°C				C, CAPACITANCE (pF)
		125°C
	100	100°C
		75°C
	10
		25°C
,	1
C	1
I
		REVERSE		FORWARD
	0.1	± 0.2	0	+ 0.2	+ 0.4	+ 0.6
	± 0.4	± 0.2	0	+ 0.2	+ 0.4	+ 0.6
		VBE, BASE±EMITTER VOLTAGE (VOLTS)

10K
5K
5K
3K
3K											f =	1	MHz
2K					C	ib					TJ	=	25°C
2K						ib
1K


500



300
300
200
200
100							C	ob
								ob

50



30
30
20
20
10
0.2 0.3 0.5	1	2	3	5	10		20 30		50	100 200			500	1K	2K

VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Collector Cutoff Region

Figure 6. Capacitance Variation

Motorola Bipolar Power Transistor Device Data

MJE1320

TYPICAL DYNAMIC CHARACTERISTICS

		IC pk		VCE(pk)
		90% VCE(pk)	90% IC(pk)				s)
IC	t	t	t	fi	t	ti	(μ
IC	t	t	t		t
	sv	rv					TIME
IB	90% IB1				IC pk	2% IC	TIME
IB	90% IB1		tc		IC pk	2% IC	STORAGE,
VCE		10% VCE(pk)
		10% VCE(pk)			10%
					10%
							SV
							t
		TIME

0.7

0.5

0.3

VBE(off) = 1 V

2 V

3 V

TJ = 100°C

IC/IB1 = 2

0.5	0.7	1	2	3	5	6
	IC, COLLECTOR CURRENT (AMPS)

Figure 7. Inductive Switching Measurements

Figure 8. Inductive Storage Time

TC, CROSSOVER TIME (μs)

VBE(off) = 3 V

3	2 V
	2 V
2	1 V

0.7

0.5

0.3
0.3	0.5	0.7	1	2	3	5	6

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Inductive Crossover Time

t fi, FALL TIME ( μs)

6
5
3	VBE(off) = 3 V
	VBE(off) = 3 V
2	2 V
2
	1 V

0.7

0.5

0.3

0.3	0.5	0.7	1	2	3	5	6
		IC, COLLECTOR CURRENT (AMPS)

Figure 10. Inductive Fall Time

	td and tr	Table 1. Resistive Load Switching		ts and tf			+ Vdc ≈ 11 Vdc
	td and tr			ts and tf			+ Vdc ≈ 11 Vdc
			0 V		20	100	2N6191
H.P. 214			≈ ± 35 V				2N6191
H.P. 214			≈ ± 35 V	+
OR EQUIV.				+
OR EQUIV.		*IC		10 μF			RB1
P.G.	*IB	*IC	H.P. 214	10 μF	0.02	μ	RB1
	*IB		OR EQUIV.		0.02	F	A
			OR EQUIV.				A
	T.U.T.	RL	P.G.		0.02 μF		RB2
RB = 22 Ω		RL			0.02 μF
50		VCC	50		1 μF 100		2N5337
				500	1 μF 100
		VCC = 250 Vdc					± V
		VCC = 250 Vdc	+ V
	≈ 11 V	RL = 250 Ω	+ V
Vin	≈ 11 V	RL = 250 Ω	0 V
Vin		IC = 1 Adc		± 5 V
0 V		IB = 0.5 Adc
		IB = 0.5 Adc	A		T.U.T.
	tr ≤ 15 ns		A		T.U.T.	*IC	RL
*Tektronix AM503						*IC	RL
*Tektronix AM503			50	*IB			VCC
*P6302 or Equivalent			50				VCC
			VCC = 250 Vdc IB1 = 0.5 Adc				RB1 = 22 Ω
			RL = 250 Ω	IB2 = 0.5 Adc			RB2 = 10 Ω
			IC = 1 Adc	For VBE(off) = 5 V			RB2 = 0 Ω

Note: Adjust ± V to obtain desired VBE(off) at Point A.

4	Motorola Bipolar Power Transistor Device Data

MJE1320

		Table 2. Inductive Load Switching
			0.02	μF	100	+ V ≈ 11 V
			0.02	μF

		H.P. 214
		OR EQUIV.				2N6191
		P.G.	20			2N6191
		P.G.

	0		+
	0		10 μF			RB1
			±			RB1
	≈ ± 35 V					A
			0.02 μF			RB2
			1 μF
		50	+	±		2N5337
			500		100
			500
	T1	+ V				± V	IC(pk)
	T1	+ V				IC
						IC
	0 V	± V	*IC	L		VCE(pk)
		± V		L
	A		T.U.T.			VCE
	A		T.U.T.
Lcoil (ICpk)			MR856
Lcoil (ICpk)		*I
T1 [	50	B
T1 [							I
VCC				Vclamp		VCC	I
T1 adjusted to obtain IC(pk)				Vclamp		VCC	B1
T1 adjusted to obtain IC(pk)						IB
V(BR)CEO	Inductive Switching		RBSOA				IB2
L = 10 mH	L = 1.1 mH		L = 1.1 mH				IB2
L = 10 mH	L = 1.1 mH		L = 1.1 mH
RB2 = R	RB2 = 0		RB2 = 0
VCC = 20 Volts	VCC = 20 Volts		VCC = 20 Volts
	RB1 selected for desired IB1		RB1 selected for desired IB1
*Tektronix	Scope Ð Tektronix
*P±6042 or	7403 or
*Equivalent	Equivalent		Note: Adjust ±V to obtain desired VBE(off) at Point A.

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 12 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 12 may be found at any case temperature by using the appropriate curve on Figure 11.

TJ(pk) may be calculated from the data in Figure 14. At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be sustained simultaneously during turn±off, in most cases, with the base±to±emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage±current condition allowable during reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 13 gives the RBSOA characteristics.

Motorola Bipolar Power Transistor Device Data

MJE1320

GUARANTEED SAFE OPERATING AREA

	1
	0.8				SECOND BREAKDOWN
FACTOR	0.8					DERATING
FACTOR	0.6
DERATING	0.6
			THERMAL
	0.4		DERATING
	0.4
POWER	0.2
	0
	20	40	60	80	100	120	140	160
			TC, CASE TEMPERATURE (°C)

	10
(AMPS)	5			10 μs
(AMPS)	2			5 ms
CURRENT	1		dc
			dc
	0.5	TC = 25°C
COLLECTOR	0.2
	0.1	WIRE BOND LIMIT
	0.05	THERMAL LIMIT
,	0.05	SECOND BREAKDOWN LIMIT
C		SECOND BREAKDOWN LIMIT
I	0.02
	0.02
	0.01
	1	10	100	900

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 11. Power Derating	Figure 12. Maximum Rated Forward Bias Safe
	Operating Area

IC, COLLECTOR CURRENT (AMPS)

5
4		IC/IB = 1	TJ ≤ 100°C
		IC/IB = 1	TJ ≤ 100°C
			VBE(off) = 2 V
3
2
		IC/IB = 2
1
0	600	900	1200	1500	1800
0	600	900	1200	1500	1800

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 13. Maximum Rated Reverse Bias Safe

Operating Area

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1
	D = 0.5
	0.2
	0.1
0.1	0.05
	0.02
	0.01
0.01	SINGLE PULSE
0.01
0.01	0.1

	ZθJC(t) = r(t) RθJC	P(pk)
	RθJC = 1.56°C/W MAX
	D CURVES APPLY FOR POWER
	PULSE TRAIN SHOWN	t1
	READ TIME AT t1	t2
	TJ(pk) ± TC = P(pk) ZθJC	DUTY CYCLE, D = t /t
		1 2
1	10	100	1K

t, TIME (ms)

Figure 14. Thermal Response

6	Motorola Bipolar Power Transistor Device Data

MJE1320

PACKAGE DIMENSIONS

				±T±
	B		F	C
			T	S
4
Q			A
1	2	3	U
H
Z			K
Z
L				R
V				J
G
			D
	N

SEATING PLANE

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.570	0.620	14.48	15.75
B	0.380	0.405	9.66	10.28
C	0.160	0.190	4.07	4.82
D	0.025	0.035	0.64	0.88
F	0.142	0.147	3.61	3.73
G	0.095	0.105	2.42	2.66
H	0.110	0.155	2.80	3.93
J	0.018	0.025	0.46	0.64
K	0.500	0.562	12.70	14.27
L	0.045	0.060	1.15	1.52
N	0.190	0.210	4.83	5.33
Q	0.100	0.120	2.54	3.04
R	0.080	0.110	2.04	2.79
S	0.045	0.055	1.15	1.39
T	0.235	0.255	5.97	6.47
U	0.000	0.050	0.00	1.27
V	0.045	±±±	1.15	±±±
Z	±±±	0.080	±±±	2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

CASE 221A±06

TO±220AB

ISSUE Y

Motorola Bipolar Power Transistor Device Data

MJE1320

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

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