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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJ1000/D

 

NPN

Medium-Power Complementary

MJ1000

MJ1001*

Silicon Transistors

 

*Motorola Preferred Device

. . . for use as output devices in complementary general purpose amplifier applica-

 

10 AMPERE

tions.

DARLINGTON

High DC Current Gain Ð h FE = 6000 (Typ) @ IC = 3.0 Adc

POWER TRANSISTORS

Monolithic Construction with Built±in Base±Emitter Shunt Resistors

COMPLEMENTARY

 

 

SILICON

 

60 ± 80 VOLTS

 

90 WATTS

 

 

CASE 1±07 TO±204AA (TO±3)

MAXIMUM RATINGS

Rating

Symbol

MJ1000

 

MJ1001

Unit

 

 

 

 

 

 

Collector±Emitter Voltage

VCEO

60

 

80

Vdc

Collector±Base Voltage

VCB

60

 

80

Vdc

Emitter±Base Voltage

VEB

 

5.0

Vdc

Collector Current

IC

 

10

Adc

Base Current

IB

 

0.1

Adc

Total Device Dissipation @ TC = 25_C

PD

 

90

Watts

Derate above 25_C

 

 

0.515

W/_C

 

 

 

 

Operating and Storage Junction Temperature Range

TJ, Tstg

± 55 to +200

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance, Junction to Case

RθJC

1.94

_C/W

PNP

COLLECTOR

MJ900

 

MJ901

 

BASE

 

4.0 k

60

NPN

COLLECTOR

MJ1000

 

MJ1001

 

BASE

 

4.0 k

60

EMITTER

EMITTER

Figure 1. Darlington Circuit Schematic

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 7

Motorola, Inc. 1995

MJ1000

MJ1001

 

 

 

 

 

 

 

 

 

 

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

 

Symbol

Min

Max

Unit

 

 

 

 

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector±Emitter Breakdown Voltage(1) (I

C

= 100 mAdc, I = 0)

MJ1000

V

60

Ð

Vdc

 

 

 

 

 

B

MJ1001

(BR)CEO

80

Ð

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector Emitter Leakage Current

 

 

 

 

 

ICER

Ð

1.0

mAdc

 

(VCB = 60 Vdc, RBE = 1.0k ohm)

 

 

 

 

MJ1000

 

 

 

(VCB = 80 Vdc, RBE = 1.0k ohm)

 

 

 

 

MJ1001

 

Ð

1.0

 

 

(VCB = 60 Vdc, RBE = 1.0k ohm, TC = 150_C)

MJ1000

 

Ð

5.0

 

 

(VCB = 80 Vdc, RBE = 1.0k ohm, TC = 150_C)

MJ1001

 

Ð

5.0

 

 

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

 

IEBO

Ð

2.0

mAdc

 

Collector Emitter Leakage Current

(VCE = 30 Vdc, IB = 0)

MJ1000

ICEO

Ð

500

μAdc

 

 

 

(VCE = 40 Vdc, IB = 0)

MJ1001

 

Ð

500

 

 

ON CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain(1) (I = 3.0 Adc, V

 

= 3.0 Vdc)

 

h

1000

Ð

Ð

 

 

C

CE

 

 

 

FE

 

 

 

 

 

(IC = 4.0 Adc, VCE = 3.0 Vdc)

 

 

750

Ð

 

 

Collector Emitter Saturation Voltage(1)

(IC = 30 Adc, IB = 12 mAdc)

 

VCE(sat)

Ð

2.0

Vdc

 

 

 

 

(IC = 8.0 Adc, IB = 40 mAdc)

 

 

Ð

4.0

 

 

Base Emitter Voltage(1) (I = 3.0 Adc, V

 

 

= 3.0 Vdc)

 

V

Ð

2.5

Vdc

 

 

C

CE

 

 

BE(on)

 

 

 

(1)Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.

 

 

 

50,000

 

 

 

 

 

 

 

 

 

20,000

 

 

 

 

 

 

 

 

GAIN

10,000

 

TJ = 150°C

 

 

 

 

 

 

 

 

 

 

 

 

5000

 

 

 

 

 

 

 

 

CURRENT

 

 

 

 

 

 

 

 

2000

 

 

25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

1000

 

 

 

 

 

 

 

 

, DC

 

 

 

 

 

 

 

 

500

 

 

 

 

 

 

 

 

FE

 

 

± 55°C

 

 

 

 

 

 

 

 

 

 

 

h

200

 

 

 

 

 

 

 

 

 

 

 

 

VCE = 3.0 V

 

 

 

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

 

50

 

 

 

 

 

 

 

 

 

0.01

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

 

 

IC, COLLECTOR CURRENT (AMP)

 

 

Figure 2. DC Current Gain

 

3000

 

 

 

 

GAIN

2000

 

 

 

 

1000

 

TC = 25°C

 

 

CURRENT

 

 

 

500

 

 

 

 

 

 

 

 

 

, SMALL±SIGNAL

300

 

 

 

 

200

 

VCE = 3.0 Vdc

 

 

 

 

IC = 3.0 Adc

 

 

100

 

 

 

 

 

 

 

 

 

fe

 

 

 

 

 

h

50

 

 

 

 

 

 

 

 

 

 

30

3

4

5

6

 

10

 

10

10

10

f, FREQUENCY (Hz)

Figure 3. Small±Signal Current Gain

 

3.5

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CURRENTCOLLECTOR, (AMPS)

7.0

TJ = 200°C

 

 

 

 

 

 

 

 

 

3.0

 

 

 

°

 

 

 

 

 

5.0

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ = 25 C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(VOLTS)VOLTAGEV,

2.5

 

 

 

 

 

 

 

 

 

3.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.3

 

 

 

 

 

MJ1000

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.0

 

 

 

 

 

 

 

 

 

 

 

2.0

 

 

 

VBE(sat) @ IC/IB = 250

 

 

 

 

1.0

 

SECONDARY BREAKDOWN

 

 

 

 

 

 

 

 

 

 

 

 

 

 

LIMITATION

 

 

 

 

 

 

 

 

1.5

 

 

 

 

 

 

 

 

 

 

0.7

 

THERMAL LIMITATION @ TC = 25°C

 

 

 

 

1.0

 

 

 

VBE @ VCE = 3.0 V

 

 

 

 

0.5

 

BONDING WIRE LIMITATION

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.5

 

 

 

VCE(sat) @ IC/IB = 250

 

 

 

C

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

 

 

 

 

 

MJ1001

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

 

0.1

2.0

3.0

5.0

7.0

10

20

30

50

70

100

 

0.01

 

1.0

 

 

 

IC, COLLECTOR CURRENT (AMP)

 

 

 

 

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

 

 

Figure 4. ªOnº Voltages

Figure 5. DC Safe Operating Area

There we two limitations on the power handling ability of a transistor: average junction temperature and secondary breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; e.g., the transistor must not be subjected to greater

dissipation than the curves indicate.

At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown.

2

Motorola Bipolar Power Transistor Device Data

MJ1000 MJ1001

PACKAGE DIMENSIONS

 

A

 

 

 

 

 

 

 

 

 

 

 

 

N

 

 

 

 

 

 

NOTES:

 

 

 

 

 

C

 

 

 

 

 

 

1. DIMENSIONING AND TOLERANCING PER ANSI

 

 

 

 

 

 

 

Y14.5M, 1982.

 

 

 

 

 

±T±

SEATING

 

 

2. CONTROLLING DIMENSION: INCH.

 

 

E

 

 

PLANE

 

 

3. ALL RULES AND NOTES ASSOCIATED WITH

 

 

 

 

 

 

 

REFERENCED TO±204AA OUTLINE SHALL APPLY.

 

D 2 PL

K

 

 

 

 

 

 

 

 

 

 

 

 

INCHES

MILLIMETERS

 

 

 

 

 

 

 

 

 

0.13 (0.005) M

T

Q

M

Y

M

 

 

DIM

MIN

MAX

MIN

MAX

 

U

 

 

 

 

 

 

A

1.550 REF

39.37 REF

 

±Y±

 

 

 

 

B

±±±

1.050

±±±

26.67

V

L

 

 

 

 

 

 

 

 

 

 

C

0.250

0.335

6.35

8.51

 

2

 

 

 

 

 

 

D

0.038

0.043

0.97

1.09

 

 

B

 

 

 

 

E

0.055

0.070

1.40

1.77

H

G

 

 

 

 

 

G

0.430 BSC

10.92 BSC

1

 

 

 

 

 

 

H

0.215 BSC

5.46 BSC

 

 

 

 

 

 

 

K

0.440

0.480

11.18

12.19

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

L

0.665 BSC

16.89 BSC

 

±Q±

 

 

 

 

 

 

N

±±±

0.830

±±±

21.08

 

0.13 (0.005) M

T

Y

M

 

 

 

Q

0.151

0.165

3.84

4.19

 

 

 

 

U

1.187 BSC

30.15 BSC

 

 

 

 

 

 

 

 

V

0.131

0.188

3.33

4.77

 

 

 

 

 

 

 

 

STYLE 1:

 

 

 

 

 

 

 

 

 

 

 

 

PIN 1. BASE

 

 

 

 

 

 

 

 

 

 

 

2. EMITTER

 

 

 

 

 

 

 

 

 

 

CASE: COLLECTOR

 

 

CASE 1±07

TO±204AA (TO±3)

ISSUE Z

Motorola Bipolar Power Transistor Device Data

3

MJ1000 MJ1001

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447

6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315

MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design±NET.com

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

MJ1000/D

*MJ1000/D*

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