Добавил:

student_tipo Опубликованный материал нарушает ваши авторские права? Сообщите нам.

Вуз:

Балаковский институт техники, технологии и управления

Предмет:

[НЕСОРТИРОВАННОЕ]

Файл:

MJ10020R

.PDF

Источник:

https://manualmachine.com

Скачиваний:

Добавлен:

06.01.2022

Размер:

300.87 Кб

Скачать

☆

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJ10020/D

Designer's Data Sheet

SWITCHMODE Series

NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode

The MJ10020 and MJ10021 Darlington transistors are designed for high±voltage, high±speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:

•AC and DC Motor Controls

•Switching Regulators

•Inverters

•Solenoid and Relay Drivers

•Fast Turn±Off Times

150 ns Inductive Fall Time at 25_C (Typ) 750 ns Inductive Storage Time at 25_C (Typ)

•Operating Temperature Range ±65 to +200_C

•100_C Performance Specified for:

Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages

Leakage Currents

≈ 100

≈ 15

MJ10020

MJ10021

60 AMPERE

NPN SILICON

POWER DARLINGTON

TRANSISTORS

200 AND 250 VOLTS

250 WATTS

CASE 197A±05

TO±204AE (TO±3)

MAXIMUM RATINGS

Rating	Symbol	MJ10020		MJ10021	Unit

Collector±Emitter Voltage	VCEO	200		250	Vdc
Collector±Emitter Voltage	VCEV	300		350	Vdc
Emitter Base Voltage	VEB		8.0		Vdc
Collector Current Ð Continuous	IC		60		Adc
Ð Peak (1)	ICM		100
Base Current Ð Continuous	IB		20		Adc
Ð Peak (1)	IBM		30
Total Power Dissipation @ TC = 25_C	PD		250		Watts
@ TC = 100_C			143
Derate above 25_C			1.43		_
					W/ C
Operating and Storage Junction Temperature Range	TJ, Tstg	± 65 to +200			_C

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RqJC	0.7	_C/W
Maximum Lead Temperature for Soldering Purposes:	TL	275	_C
1/8″ from Case for 5 Seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

Designer's and SWITCHMODE are trademarks of Motorola, Inc.

Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Motorola, Inc. 1995

MJ10020

MJ10021

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector±Emitter Sustaining Voltage (Table 1)

MJ10020

VCEO(sus)

200

Vdc

(IC = 100 mA, IB = 0)

MJ10021

250

Collector Cutoff Current

ICEV

mAdc

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)

0.25

(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C)

5.0

Collector Cutoff Current

ICER

5.0

mAdc

(VCE = Rated VCEV, RBE = 50 Ω, TC = 100_C)

Emitter Cutoff Current

IEBO

175

mAdc

(VEB = 2.0 V, IC = 0)

SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased

IS/b

See Figure 13

Clamped Inductive SOA with Base Reverse Biased

RBSOA

See Figure 14

ON CHARACTERISTICS (1)

DC Current Gain

hFE

1000

(IC = 15 Adc, VCE = 5.0 V)

Collector±Emitter Saturation Voltage

VCE(sat)

Vdc

(IC = 30 Adc, IB = 1.2 Adc)

2.2

(IC = 60 Adc, IB = 4.0 Adc)

4.0

(IC = 30 Adc, IB = 1.2 Adc, TC = 100_C)

2.4

Base±Emitter Saturation Voltage

VBE(sat)

Vdc

(IC = 30 Adc, IB = 1.2 Adc)

3.0

(IC = 30 Adc, IB = 1.2 Adc, TC = 100_C)

3.5

Diode Forward Voltage

2.5

5.0

Vdc

(IF = 30 Adc)

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

175

700

(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time

0.02

0.2

μs

Rise Time

(VCC = 175 Vdc, IC = 30 A,

0.30

1.0

μs

IB1 = Adc, VBE(off) = 5.0 V, tp = 25 μs

Storage Time

1.0

3.5

μs

Duty Cycle v 2.0%).

Fall Time

0.07

0.5

μs

Inductive Load, Clamped (Table 1)

Storage Time

ICM = 30 A(pk), VCEM = 200 V, IB1 = 1.2 A,

tsv

1.2

3.5

μs

Crossover Time

VBE(off) = 5 V, TC = 100°C)

0.45

2.0

μs

Storage Time

(ICM = 30 A(pk), VCEM = 200 V, IB1 = 1.2 A,

tsv

0.75

μs

Crossover Time

0.25

μs

= 5 V, T

= 25°C)

BE(off)

Fall Time

tfi

0.15

μs

(1) Pulse Test: PW = 300 μs, Duty Cycle v 2%.

2	Motorola Bipolar Power Transistor Device Data

MJ10020 MJ10021

TYPICAL ELECTRICAL CHARACTERISTICS

	1000			TJ = 100°C
	700			TJ = 100°C
	500
GAIN	200				TJ = 25°C
CURRENT	100
CURRENT	70
, DC	70
, DC	50
FE	30
h		VCE = 5.0 V
		VCE = 5.0 V
	20
	10	2.0	3.0	5.0	7.0	10	20	30	50	70	100
	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70	100
			IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain

(VOLTS)	3.0
	2.7

VOLTAGE	2.4	IC/IB = 25
	2.1
	1.8
, COLLECTOR±EMITTER	1.8
	1.5
	1.2					°
				TJ = 25 C
	0.9						TJ = 100°C
							TJ = 100°C
	0.6
	0.3
CE
V	0.1	0.2	0.4	6.0	8.0	10	20	40	60	80 100
	0.1	0.2	0.4	6.0	8.0	10	20	40	60	80 100
			IC, COLLECTOR CURRENT (AMPS)

Figure 3. Collector±Emitter Saturation Voltage

	104
		VCE = 250 V
μA)	103
(
CURRENT	102	TJ = 125°C
	102	100°C
		100°C
,COLLECTOR	101	75°C
	101
	100
C	100
I		25°C
		25°C
	10 ±1	0	+ 0.2	+ 0.4	+ 0.6	+ 0.8
	± 0.2	0	+ 0.2	+ 0.4	+ 0.6	+ 0.8
		VBE, BASE±EMITTER VOLTAGE (VOLTS)

Figure 5. Collector Cutoff Region

(VOLTS)	5.0
(VOLTS)	4.5							TJ = 25°C
VOLTAGE	4.0
	3.5
	3.0
, COLLECTOR±EMITTER	3.0							= 60 A
	2.5
	2.0					= 30 A
						= 30 A
	1.5		= 10 A
	1.0
	0.5	IC = 1.0 A
CE
V	0.01	0.02	0.05	0.1	0.2 0.3	0.5	1.0	2.0	3.0	5.0	10
	0.01	0.02	0.05	0.1	0.2 0.3	0.5	1.0	2.0	3.0	5.0	10
				IB, BASE CURRENT (AMPS)

Figure 2. Collector Saturation Region

	3.0
(VOLTS)	2.7
(VOLTS)	2.4	IC/IB = 25
VOLTAGE	2.1
VOLTAGE	1.8			TJ = 25°C
,BASE±EMITTER	1.5
	1.2				TJ = 100°C
	0.9
	0.6
BE	0.3
V	0.3
	0.1	2.0	3.0	5.0	7.0	10	20	30	50	70	100
			IC, COLLECTOR CURRENT (AMPS)

Figure 4. Base±Emitter Voltage

	1000
	700
(pF)	500
(pF)					TJ = 25°C
CAPACITANCE					TJ = 25°C
	300
	200
C,	200
C,
	100	5.0	7.0	10		30	50	70		200	300
	3.0	5.0	7.0	10	20	30	50	70	100	200	300
				VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Output Capacitance

Motorola Bipolar Power Transistor Device Data

MJ10020 MJ10021

Table 1. Test Conditions for Dynamic Performance

INPUT	CONDITIONS
CIRCUIT	VALUES
TEST CIRCUITS

VCEO(sus)	RBSOA AND INDUCTIVE SWITCHING
20 Ω	INDUCTIVE TEST CIRCUIT
1
5 V	TUT
0	TUT			Rcoil
	1	1N4937		Rcoil
2	INPUT	OR		Lcoil
2	INPUT	EQUIVALENT		Lcoil
	SEE ABOVE FOR	EQUIVALENT
	SEE ABOVE FOR	Vclamp
	DETAILED CONDITIONS	Vclamp		V
PW Varied to Attain				CC
PW Varied to Attain
IC = 100 mA	2	RS =
		0.1 Ω
Lcoil = 10 mH, VCC = 10 V	Lcoil = 180 μH
Rcoil = 0.7 Ω	Rcoil = 0.05 Ω
Vclamp = VCEO(sus)	VCC = 20 V
OUTPUT WAVEFORMS
		t1 Adjusted to
		Obtain IC
ICM	tf Clamped	t1	≈	Lcoil (ICM)
	t	t1	≈	VCC
t1	t			VCC
t1	tf			Lcoil (ICM)
		t2	≈	Lcoil (ICM)
		t2	≈	VClamp

VCEM	V	Test Equipment
	clamp	Test Equipment
TIME	t	Scope Ð Tektronix
TIME	t2	475 or Equivalent

RESISTIVE SWITCHING

TURN±ON TIME

IB1

IB1 adjusted to obtain the forced hFE desired

TURN±OFF TIME

Use inductive switching driver as the input to the resistive test circuit.

VCC = 175 V

RL = 5.6 Ω

Pulse Width = 25 μs

RESISTIVE TEST CIRCUIT

	TUT
1	RL
2	VCC
	VCC

* Adjust ±V such that VBE(off) = 5 V except as required for RBSOA (Figure 14).

ICM

VCEM

9.0

clamp

(AMPS)

90% VCEM

90% ICM

8.0

7.0

CURRENT

6.0

5.0

VCE

10% VCEM

10%

, BASE

4.0

IC = 30 A

90% I

2% IC

3.0

IB1 = 1.2 A

B2(pk)

VCLAMP = 200 V

2.0

= 25°C

1.0

TIME

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

VBE(off), BASE±EMITTER VOLTAGE (VOLTS)

Figure 7. Inductive Switching Measurements

Figure 8. Typical Peak Reverse Base Current

	3.2								2.4
	2.8						ICM = 30 A		2.1
s)	2.8						IC/IB = 25		2.1	t
										t
										sv
μ	2.4								1.8	,
, CROSSOVER TIME (	2.4								1.8	STORAGE VOLTAGE
	2.0								1.5
	1.6							tsv @ 100°C	1.2
	1.6								1.2
	1.2							tsv @ 25°C	0.9
								tsv @ 25°C
c	0.8								0.6	TIME
t	0.8							tc @ 100°C	0.6	TIME
										(
	0.4								0.3	s)μ
	0.4	tc @ 25°C							0.3	s)μ
	0	tc @ 25°C
	0	1.0	2.0	3.0	4.0	5.0	6.0	7.0	8.0
	0	1.0	2.0	3.0	4.0	5.0	6.0	7.0	8.0

VBE(off), BASE±EMITTER VOLTAGE (VOLTS)

Figure 9. Typical Inductive Switching Times

4	Motorola Bipolar Power Transistor Device Data

MJ10020 MJ10021

SWITCHING TIMES NOTE

In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined.

tsv = Voltage Storage Time, 90% IB1 to 10% VCEM trv = Voltage Rise Time, 10±90% VCEM

tfi = Current Fall Time, 90±10% ICM tti = Current Tail, 10±2% ICM

tc = Crossover Time, 10% VCEM to 10% ICM

An enlarged portion of the inductive switching waveforms is

shown in Figure 7 to aid in the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained us-

ing the standard equation from AN±222A:

PSWT = 1/2 VCC IC (tc) f

In general, trv + tfi ^ tc. However, at lower test currents this relationship may not be valid.

As is common with most switching transistors, resistive switching is specified at 25°C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a ªSWITCHMODEº transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100_C.

RESISTIVE SWITCHING

	10
	7.0		VCC = 175 V
	5.0		VCC = 175 V
	3.0		IC/IB = 25
	2.0		TJ = 25°C
	1.0
μs)	0.7
μs)	0.5
(	0.5
TIME	0.3		tr
TIME	0.2		tr
t,	0.1
	0.1
	0.07
	0.05		td
	0.03
	0.02
	0.01	0.8 1.0	2.0	3.0	5.0	7.0	10	20	40	60
	0.6	0.8 1.0	2.0	3.0	5.0	7.0	10	20	40	60

IC, COLLECTOR CURRENT (AMPS)

Figure 10. Typical Turn±On Switching Times

	2.0	VCC = 175 V
		VCC = 175 V
	1.0	IC/IB = 25
	0.7	VBE(off) = 5 V						ts
	0.5	TJ = 25°C						ts
	0.5	TJ = 25°C
μs)	0.3
(	0.3
t, TIME	0.2
t, TIME	0.1
	0.1		tf
	0.07		tf
	0.07
	0.05
	0.03
	0.02	0.6 0.81.0	2.0	3.0	5.0	7.0	10	20	40	60
		0.6 0.81.0	2.0	3.0	5.0	7.0	10	20	40	60
			IC, COLLECTOR CURRENT (AMPS)

Figure 11. Typical Turn±Off Switching Times

1.0

r(t), TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

0.1

SINGLE PULSE

RθJC(t) = RθJC

(pk)

RθJC(t) = 0.7°C/W MAX

DETERMINE t2 FOR POWER

PULSE AND READ r(t)

J(pk)

= T

+ P

(pk)

Rθ

(t)

0.01

0.1

1.0

100

1000

10000

t, TIME (ms)

Figure 12. Thermal Response

Motorola Bipolar Power Transistor Device Data

MJ10020 MJ10021

The Safe Operating Area figures shown in Figures 13 and are specified for these devices under the test conditions shown.

	100							10 μs
								10 μs
(AMP)							100 μs
(AMP)	10
CURRENT					dc		1 ms
	1.0				dc

,COLLECTOR
		TC = 25°C
	0.1
			BONDING WIRE LIMIT
C			BONDING WIRE LIMIT
I			THERMAL LIMIT (SINGLE PULSE)
			THERMAL LIMIT (SINGLE PULSE)
	0.01		SECOND BREAKDOWN LIMIT
	0.01	2.0	5.0	10	20	50	100	200	300
	1.0	2.0	5.0	10	20	50	100	200	300
								250
			VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 13. Maximum Forward Bias Safe

Operating Area

(AMPS)	100
	90			IC/IB ≥	25
				IC/IB ≥	25
	80		25°C ≤ TJ ≤ 100°C
CURRENT	80		25°C ≤ TJ ≤ 100°C
	70
	60
COLLECTOR	60
	50
	40						VBE(off) = 5 V
	30		TURN±OFF LOAD LINE					VBE(off) = 2 V
PEAK	30		TURN±OFF LOAD LINE					VBE(off) = 2 V
	20		BOUNDARY FOR MJ10021
	20		THE LOCUS FOR MJ10020					VBE(off) = 0 V

,
CM	10		IS 50 V LESS
	10		IS 50 V LESS

I
	0	0	50	100	150	200	250	300

VCEM, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 14. Maximum RBSOA, Reverse Bias

Safe Operating Area

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 13 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 13 may be found at any case temperature by using the appropriate curve on Figure 15.

TJ(pk) may be calculated from the data in Figure 12. At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations imposed by second breakdown.

REVERSE BIAS

For Inductive loads, high voltage and high current must be sustained simultaneously during turn±off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage±current condition allowable during reverse biased turn±off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 14 gives the RBSOA characteristics.

	100
(%)				SECOND BREAKDOWN
(%)	80				DERATING
FACTOR	60
DERATING	60
	40		THERMAL
	40		DERATING

POWER	20
POWER
	0	40	80	120	160	200
	0	40	80	120	160	200
			TC, CASE TEMPERATURE (°C)

Figure 15. Power Derating

6	Motorola Bipolar Power Transistor Device Data

MJ10020 MJ10021

PACKAGE DIMENSIONS

±T±

SEATING

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

PLANE

Y14.5M, 1982.

D 2 PL

2. CONTROLLING DIMENSION: INCH.

INCHES

MILLIMETERS

0.30 (0.012) M

DIM

MIN

MAX

MIN

MAX

1.530 REF

38.86 REF

±Y±

0.990

1.050

25.15

26.67

0.250

0.335

6.35

8.51

0.057

0.063

1.45

1.60

0.060

0.070

1.53

1.77

0.430 BSC

10.92 BSC

0.215 BSC

5.46 BSC

0.440

0.480

11.18

12.19

0.665 BSC

16.89 BSC

±Q±

0.760

0.830

19.31

21.08

0.25 (0.010) M

0.151

0.165

3.84

4.19

1.187 BSC

30.15 BSC

0.131

0.188

3.33

4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

CASE 197A±05

TO±204AE (TO±3)

ISSUE J

Motorola Bipolar Power Transistor Device Data

MJ10020 MJ10021

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

◊ MJ10020/D

*MJ10020/D*

Соседние файлы в папке Bipolar

#
06.01.2022233.65 Кб2MJ10007R.PDF
#
06.01.2022241.58 Кб2MJ10009R.PDF
#
06.01.2022142.62 Кб2MJ1000RE.PDF
#
06.01.2022196.41 Кб2MJ10012R.PDF
#
06.01.2022222.29 Кб2MJ10015R.PDF
#
06.01.2022300.87 Кб2MJ10020R.PDF
#
06.01.2022307.87 Кб2MJ10022R.PDF
#
06.01.2022160.93 Кб2MJ11012R.PDF
#
06.01.2022240.72 Кб2MJ11017R.PDF
#
06.01.2022157.67 Кб2MJ11028R.PDF
#
06.01.2022285.37 Кб2MJ13333R.PDF