MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by TIP100/D
Plastic Medium-Power Complementary Silicon Transistors
. . . designed for general±purpose amplifier and low±speed switching applications.
• High DC Current Gain Ð
hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector±Emitter Sustaining Voltage Ð @ 30 mAdc
VCEO(sus) = 60 Vdc (Min) Ð TIP100, TIP105
VCEO(sus) = 80 Vdc (Min) Ð TIP101, TIP106
VCEO(sus) = 100 Vdc (Min) Ð TIP102, TIP107
• Low Collector±Emitter Saturation Voltage Ð
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat) = 2.5 Vdc (Max) @ IC = 8.0 Adc
•Monolithic Construction with Built±in Base±Emitter Shunt Resistors
•TO±220AB Compact Package
*MAXIMUM RATINGS
NPN
TIP100 TIP101*
TIP102*
PNP
TIP105 TIP106* TIP107*
*Motorola Preferred Device
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TIP100, |
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TIP101, |
TIP102, |
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Rating |
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Symbol |
TIP105 |
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TIP106 |
TIP107 |
Unit |
DARLINGTON |
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Collector±Emitter Voltage |
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VCEO |
60 |
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80 |
100 |
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Vdc |
8 AMPERE |
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COMPLEMENTARY SILICON |
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Collector±Base Voltage |
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VCB |
60 |
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80 |
100 |
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Vdc |
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POWER TRANSISTORS |
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Emitter±Base Voltage |
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VEB |
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5.0 |
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Vdc |
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60 ± 80 ± 100 VOLTS |
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Collector Current Ð Continuous |
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IC |
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8.0 |
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80 WATTS |
Peak |
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15 |
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Adc |
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Base Current |
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IB |
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1.0 |
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Adc |
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Total Power Dissipation @ TC = 25_C |
PD |
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80 |
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Watts |
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Derate above 25_C |
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0.64 |
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W/_C |
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Unclamped Inductive Load Energy (1) |
E |
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30 |
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mJ |
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Total Power Dissipation @ TA = 25_C |
PD |
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2.0 |
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Watts |
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Derate above 25_C |
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0.016 |
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W/_C |
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Operating and Storage Junction |
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TJ, Tstg |
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± 65 to +150 |
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_C |
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Temperature Range |
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THERMAL CHARACTERISTICS |
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Characteristic |
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Symbol |
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Max |
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Unit |
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Thermal Resistance, Junction to Case |
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RθJC |
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1.56 |
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_C/W |
CASE 221A±06 |
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Thermal Resistance, Junction to Ambient |
RθJA |
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62.5 |
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_C/W |
TO±220AB |
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(1) IC = 1.1 A, L = 50 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 Ω. |
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TA |
TC |
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4.0 |
80 |
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(WATTS) |
3.0 |
60 |
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DISSIPATION |
2.0 |
40 |
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TC |
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POWER, |
1.0 |
20 |
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TA |
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D |
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P |
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0 |
0 |
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0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
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T, TEMPERATURE (°C) |
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Figure 1. Power Derating |
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Preferred devices are Motorola recommended choices for future use and best overall value. |
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REV 7 |
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Motorola, Inc. 1995
TIP100 |
TIP101 |
TIP102 |
TIP105 |
TIP106 |
TIP107 |
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) |
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Characteristic |
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Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage (1) |
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VCEO(sus) |
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Vdc |
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(IC = 30 mAdc, IB = 0) |
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TIP100, TIP105 |
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60 |
Ð |
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TIP101, TIP106 |
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80 |
Ð |
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TIP102, TIP107 |
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100 |
Ð |
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μAdc |
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Collector Cutoff Current |
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ICEO |
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(VCE = 30 Vdc, IB = 0) |
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TIP100, TIP105 |
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Ð |
50 |
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(VCE = 40 Vdc, IB = 0) |
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TIP101, TIP106 |
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Ð |
50 |
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(VCE = 50 Vdc, IB = 0) |
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TIP102, TIP107 |
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Ð |
50 |
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Collector Cuttoff Current |
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ICBO |
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μAdc |
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(VCB = 60 Vdc, IE = 0) |
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TIP100, TIP105 |
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Ð |
50 |
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(VCB = 80 Vdc, IE = 0) |
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TIP101, TIP106 |
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Ð |
50 |
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(VCB = 100 Vdc, IE = 0) |
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TIP102, TIP107 |
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50 |
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Emitter Cutoff Current |
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IEBO |
Ð |
8.0 |
mAdc |
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(VBE = 5.0 Vdc, IC = 0) |
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ON CHARACTERISTICS (1) |
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DC Current Gain |
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hFE |
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Ð |
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(IC = 3.0 Adc, VCE = 4.0 Vdc) |
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1000 |
20,000 |
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(IC = 8.0 Adc, VCE = 4.0 Vdc) |
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200 |
Ð |
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Collector±Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
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(IC = 3.0 Adc, IB = 6.0 mAdc) |
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Ð |
2.0 |
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(IC = 8.0 Adc, IB = 80 mAdc) |
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Ð |
2.5 |
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Base±Emitter On Voltage |
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VBE(on) |
Ð |
2.8 |
Vdc |
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(IC = 8.0 Adc, VCE = 4.0 Vdc) |
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DYNAMIC CHARACTERISTICS |
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Small±Signal Current Gain |
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hfe |
4.0 |
Ð |
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(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) |
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Ð |
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Output Capacitance |
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Cob |
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pF |
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(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) |
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TIP105, TIP106, TIP107 |
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Ð |
300 |
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TIP100, TIP101, TIP102 |
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Ð |
200 |
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(1) Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2%.
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS |
VCC |
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± 30 V |
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D1, MUST BE FAST RECOVERY TYPE, eg: |
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1N5825 USED ABOVE IB ≈ 100 mA |
RC |
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MSD6100 USED BELOW IB ≈ 100 mA |
SCOPE |
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TUT |
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V2 |
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R |
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approx |
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B |
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+ 8.0 |
V |
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0 |
51 |
D1 |
≈ 8.0 k |
≈ 120 |
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V1 |
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+ 4.0 V |
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approx |
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±12 V |
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25 |
μ |
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for td and tr, D1 is disconnected |
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tr, tf ≤ 10 ns |
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and V2 = 0 |
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DUTY CYCLE = 1.0% |
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For NPN test circuit reverse all polarities. |
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Figure 2. Switching Times Test Circuit
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5.0 |
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PNP |
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3.0 |
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ts |
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NPN |
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2.0 |
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1.0 |
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tf |
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μs) |
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0.7 |
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( |
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t, TIME |
0.5 |
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0.3 |
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0.2 |
VCC = 30 V |
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tr |
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0.1 |
IC/IB = 250 |
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IB1 = IB2 |
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0.07 |
TJ = 25°C |
t |
d |
@ V |
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= 0 V |
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0.05 |
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BE(off) |
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0.2 |
0.3 |
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0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
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0.1 |
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IC, COLLECTOR CURRENT (AMP)
Figure 3. Switching Times
2 |
Motorola Bipolar Power Transistor Device Data |
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TIP100 |
TIP101 |
TIP102 |
TIP105 |
TIP106 |
TIP107 |
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1.0 |
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TRANSIENTTHERMAL RESISTANCE |
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0.7 |
D = 0.5 |
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0.5 |
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0.3 |
0.2 |
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(NORMALIZED) |
0.2 |
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0.1 |
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0.1 |
0.05 |
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ZθJC(t) = r(t) RθJC |
P(pk) |
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0.07 |
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RθJC = 1.56°C/W MAX |
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0.05 |
0.02 |
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D CURVES APPLY FOR POWER |
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PULSE TRAIN SHOWN |
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t1 |
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0.03 |
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READ TIME AT t1 |
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0.02 |
0.01 |
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t2 |
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r(t), |
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SINGLE PULSE |
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TJ(pk) ± TC = P(pk) ZθJC(t) |
DUTY CYCLE, D = t1/t2 |
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0.01 |
0.02 |
0.05 |
0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
200 |
500 |
1.0 k |
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0.01 |
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t, TIME (ms)
Figure 4. Thermal Response
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10 |
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5 ms |
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(mA) |
5.0 |
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100 μs |
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CURRENT |
2.0 |
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TJ = 150°C |
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1 ms |
dc |
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1.0 |
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BONDING WIRE LIMITED |
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COLLECTOR |
0.5 |
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THERMALLY LIMITED @ TC = 25°C |
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0.2 |
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SECOND BREAKDOWN LIMITED |
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CURVES APPLY BELOW RATED VCEO |
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0.1 |
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TIP100, TIP105 |
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, |
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C |
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0.05 |
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TIP101, TIP106 |
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I |
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0.02 |
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TIP102, TIP107 |
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1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS) |
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Figure 5. Active±Region Safe Operating Area
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations imposed by second breakdown
10,000 |
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300 |
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GAIN |
5000 |
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TC = 25°C |
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TJ = 25°C |
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3000 |
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VCE = 4.0 Vdc |
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200 |
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,SMALL±SIGNAL CURRENT |
2000 |
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IC = 3.0 Adc |
C, CAPACITANCE (pF) |
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1000 |
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Cob |
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500 |
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100 |
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300 |
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Cib |
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200 |
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100 |
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50 |
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fe |
30 |
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PNP |
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PNP |
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h |
20 |
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NPN |
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NPN |
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10 |
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30 |
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1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
200 |
500 |
1000 |
0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
f, FREQUENCY (kHz) |
VR, REVERSE VOLTAGE (VOLTS) |
Figure 6. Small±Signal Current Gain |
Figure 7. Capacitance |
Motorola Bipolar Power Transistor Device Data |
3 |
TIP100 |
TIP101 |
TIP102 |
TIP105 |
TIP106 |
TIP107 |
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NPN |
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PNP |
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TIP100, TIP101, TIP102 |
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TIP105, TIP106, TIP107 |
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20,000 |
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20,000 |
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VCE = 4.0 V |
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VCE = 4.0 V |
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10,000 |
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10,000 |
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GAIN |
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TJ = 150°C |
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GAIN |
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7000 |
TJ = 150°C |
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5000 |
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5000 |
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, DC CURRENT |
3000 |
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25°C |
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, DC CURRENT |
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3000 |
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25°C |
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2000 |
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2000 |
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± 55°C |
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1000 |
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± 55°C |
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1000 |
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FE |
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FE |
700 |
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h |
500 |
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h |
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500 |
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300 |
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300 |
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200 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
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200 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
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0.1 |
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0.1 |
||||||||||||||||||||
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IC, COLLECTOR CURRENT (AMP) |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 8. DC Current Gain
(VOLTS) |
3.0 |
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TJ = 25°C |
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VOLTAGE |
2.6 |
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2.2 |
IC = 2.0 A |
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4.0 A |
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6.0 A |
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, COLLECTOR±EMITTER |
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1.8 |
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1.4 |
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CE |
1.0 |
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V |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
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0.3 |
||||||||||
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IB, BASE CURRENT (mA) |
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(VOLTS) |
3.0 |
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TJ = 25°C |
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VOLTAGE |
2.6 |
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2.2 |
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IC = 2.0 A |
4.0 A |
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6.0 A |
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, COLLECTOR±EMITTER |
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1.8 |
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1.4 |
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CE |
1.0 |
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V |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
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0.3 |
||||||||||
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IB, BASE CURRENT (mA) |
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Figure 9. Collector Saturation Region
|
3.0 |
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TJ = 25°C |
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2.5 |
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(VOLTS) |
2.0 |
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V, VOLTAGE |
1.5 |
VBE(sat) @ IC/IB = 250 |
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VBE @ VCE = 4.0 V |
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1.0 |
VCE(sat) |
@ IC/IB = 250 |
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0.5 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
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0.1 |
||||||||||
IC, COLLECTOR CURRENT (AMP)
|
3.0 |
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TJ = 25°C |
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2.5 |
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(VOLTS) |
2.0 |
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V, VOLTAGE |
1.5 |
VBE @ VCE = 4.0 V |
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VBE(sat) @ IC/IB = 250 |
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1.0 |
VCE(sat) @ IC/IB = 250 |
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0.5 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
|
0.1 |
||||||||||
IC, COLLECTOR CURRENT (AMP)
Figure 10. ªOnº Voltages
4 |
Motorola Bipolar Power Transistor Device Data |
TIP100 TIP101 TIP102 TIP105 TIP106 TIP107
PACKAGE DIMENSIONS
|
|
|
|
±T± |
|
B |
|
F |
C |
|
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T |
S |
4 |
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Q |
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A |
|
1 |
2 |
3 |
U |
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H |
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Z |
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K |
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L |
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R |
V |
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J |
G |
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D |
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N |
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|
SEATING PLANE
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.
|
INCHES |
MILLIMETERS |
||
DIM |
MIN |
MAX |
MIN |
MAX |
A |
0.570 |
0.620 |
14.48 |
15.75 |
B |
0.380 |
0.405 |
9.66 |
10.28 |
C |
0.160 |
0.190 |
4.07 |
4.82 |
D |
0.025 |
0.035 |
0.64 |
0.88 |
F |
0.142 |
0.147 |
3.61 |
3.73 |
G |
0.095 |
0.105 |
2.42 |
2.66 |
H |
0.110 |
0.155 |
2.80 |
3.93 |
J |
0.018 |
0.025 |
0.46 |
0.64 |
K |
0.500 |
0.562 |
12.70 |
14.27 |
L |
0.045 |
0.060 |
1.15 |
1.52 |
N |
0.190 |
0.210 |
4.83 |
5.33 |
Q |
0.100 |
0.120 |
2.54 |
3.04 |
R |
0.080 |
0.110 |
2.04 |
2.79 |
S |
0.045 |
0.055 |
1.15 |
1.39 |
T |
0.235 |
0.255 |
5.97 |
6.47 |
U |
0.000 |
0.050 |
0.00 |
1.27 |
V |
0.045 |
±±± |
1.15 |
±±± |
Z |
±±± |
0.080 |
±±± |
2.04 |
STYLE 1:
PIN 1. BASE
2.COLLECTOR
3.EMITTER
4.COLLECTOR
CASE 221A±06
TO±220AB
ISSUE Y
Motorola Bipolar Power Transistor Device Data |
5 |
TIP100 TIP101 TIP102 TIP105 TIP106 TIP107
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and 
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us: |
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◊ TIP100/D
*TIP100/D*