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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N6497/D

High Voltage NPN Silicon Power

Transistors

. . . designed for high voltage inverters, switching regulators and line±operated amplifier applications. Especially well suited for switching power supply applications.

• High Collector±Emitter Sustaining Voltage Ð

VCEO(sus) = 250 Vdc (Min) Ð 2N6497

VCEO(sus) = 300 Vdc (Min) Ð 2N6498

• Excellent DC Current Gain

hFE = 10±75 @ IC = 2.5 Adc

• Low Collector±Emitter Saturation Voltage @ IC = 2.5 Adc Ð

VCE(sat) = 1.0 Vdc (Max) Ð 2N6497

VCE(sat) = 1.25 Vdc (Max) Ð 2N6498

MAXIMUM RATINGS (1)

2N6497

2N6498*

*Motorola Preferred Device

5 AMPERE

POWER TRANSISTORS

NPN SILICON

250 & 300 VOLTS

80 WATTS

CASE 221A±06

TO±220AB

Rating	Symbol	2N6497	2N6498	Unit

Collector±Emitter Voltage	VCEO	250	300	Vdc
Collector±Base Voltage	VCB	350	400	Vdc
Emitter±Base Voltage	VEB	6.0	6.0	Vdc
Collector Current Ð Continuous	IC	5.0	5.0	Adc
Ð Peak		10	10

Base Current	IB	2.0	2.0	Adc
Total Power Dissipation @ TC = 25_C	PD	80	80	Watts
Derate above 25_C		0.64	0.64	W/_C

Operating and Storage Junction Temperature Range	TJ,Tstg	± 65 to +150	± 65 to +150	_C

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RθJC	1.56	_C/W

(1) Indicates JEDEC Registered Data.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 7

Motorola, Inc. 1995

2N6497		2N6498
	*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

		Characteristic		Symbol	Min	Typ	Max	Unit

	OFF CHARACTERISTICS

	Collector±Emitter Sustaining Voltage (1)			VCEO(sus)				Vdc
	(IC = 25 mAdc, IB = 0)		2N6497		250	Ð	Ð
			2N6498		300	Ð	Ð

	Collector Cutoff Current			ICEX				mAdc
	(VCE = 350 Vdc, VBE(off) = 1.5 Vdc)		2N6497		Ð	Ð	1.0
	(VCE = 400 Vdc, VBE(off) = 1.5 Vdc)		2N6498		Ð	Ð	1.0
	(VCE = 175 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C)		2N6497		Ð	Ð	10
	(VCE = 200 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C)		2N6498		Ð	Ð	10
	Emitter Cutoff Current			IEBO	Ð	Ð	1.0	mAdc
	(VBE = 6.0 Vdc, IC = 0)
	ON CHARACTERISTICS (1)

	DC Current Gain			hFE				Ð
	(IC = 2.5 Adc, VCE = 10 Vdc)				10	Ð	75
	(IC = 5.0 Adc, VCE = 10 Vdc)				3.0	Ð	Ð
	Collector±Emitter Saturation Voltage			VCE(sat)				Vdc
	Collector±Emitter Saturation Voltage			VCE(sat)				Vdc
	(IC = 2.5 Adc, IB = 500 mAdc)		2N6497		Ð	Ð	1.0
			2N6498		Ð	Ð	1.25
	(IC = 5.0 Adc, IB = 2.0 Adc)		All Devices		Ð	Ð	5.0
	Base±Emitter Saturation Voltage			VBE(sat)				Vdc
	(IC = 2.5 Adc, IB = 500 mAdc)				Ð	Ð	1.5
	(IC = 5.0 Adc, IB = 2.0 Adc)				Ð	Ð	2.5
	DYNAMIC CHARACTERISTICS

	Current±Gain Ð Bandwidth Product			fT	5.0	Ð	Ð	MHz
	(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
	Output Capacitance			Cob	Ð	Ð	150	pF
	(VCB = 10 Vdc, IE = 0, f = 100 kHz)
	SWITCHING CHARACTERISTICS

	Rise Time			tr	Ð	0.4	1.0	μs
	(VCC = 125 Vdc, IC = 2.5 Adc, IB1 = 0.5 Adc)
	Storage Time			ts	Ð	1.4	2.5	μs
	(VCC = 125 Vdc, IC = 2.5 Adc, VBE = 5.0 Vdc, IB1 = IB2 = 0.5 Adc)
	Fall Time			tf	Ð	0.45	1.0	μs
	(VCC = 125 Vdc, IC = 2.5 Adc, IB1 = IB2 = 0.5 Adc)

* Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.

		VCC
		+ 125 V
	25 μs	RC [ 50
	+ 11 V	RC [ 50
	+ 11 V	SCOPE
		SCOPE
	0	RB [ 20
	± 9.0 V	D1
		D1
	tr, tf v 10 ns
	DUTY CYCLE = 1.0%	± 5.0 V
		± 5.0 V

RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA

t, TIME ( μs)

1.0

0.7VCC = 125 V

	0.5	IC/IB = 5.0
	0.3	TJ = 25°C
	0.3
	0.2
	0.2	tr
		tr
	0.1
	0.1
	0.07


	0.05
	0.05
	0.03

		td @ VBE(off) = 5.0 V
	0.02
	0.02

0.01	0.1					1.0	2.0
0.05 0.07	0.1	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0

IC, COLLECTOR CURRENT (AMP)

Figure 1. Switching Time Test Circuit

Figure 2. Turn±On Time

2	Motorola Bipolar Power Transistor Device Data

																		2N6497		2N6498
	THERMAL RESISTANCE (NORMALIZED)	1.0
		0.7	D = 0.5
		0.5	D = 0.5
r(t) EFFECTIVE TRANSIENT		0.5
		0.3	0.2
		0.2	0.2
		0.2	0.1
			0.1									P(pk)
		0.1	0.05									P(pk)				RθJC(max) = 1.56°C/W
		0.07	0.02													D CURVES APPLY FOR POWER
		0.05											t1		SINGLE	PULSE TRAIN SHOWN
		0.03		SINGLE PULSE									t1		SINGLE	READ TIME AT t1
		0.03	0.01	SINGLE PULSE									t2		PULSE	TJ(pk) ± TC = P(pk) RθJC(t)
		0.02	0.01										DUTY CYCLE, D = t1/t2
													DUTY CYCLE, D = t1/t2
		0.01	0.02 0.03	0.05	0.1	0.2	0.3	0.5	1.0	2.0	3.0	5.0	10	20	30	50	100	200	300	500	1000
		0.01	0.02 0.03	0.05	0.1	0.2	0.3	0.5	1.0	2.0	3.0	5.0	10	20	30	50	100	200	300	500	1000
									t, TIME OR PULSE WIDTH (ms)

Figure 3. Thermal Response

	20
(AMP)	10
	5.0

CURRENT	2.0				dc		5.0 ms		1.0 ms		100 μs
	2.0
	1.0
					TC = 25°C
, COLLECTOR	0.5				TC = 25°C
	0.5
	0.2			BONDING WIRE LIMITED
	0.2			THERMAL LIMIT (SINGLE PULSE)
	0.1			THERMAL LIMIT (SINGLE PULSE)
	0.1			SECOND BREAKDOWN LIMIT
C
I	0.05	CURVES APPLY BELOW RATED VCEO							2N6497
	0.05	CURVES APPLY BELOW RATED VCEO							2N6497
	0.02								2N6498
	0.02	5.0	7.0	10	20	30	50	70	100	200	300	500
		5.0	7.0	10	20	30	50	70	100	200	300	500
				VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 4. Active±Region Safe Operating Area

	10
	7.0			ts					VCC = 125 V
									VCC = 125 V
	5.0								IC/IB = 5.0
	3.0								TJ = 25°C
	3.0
μs)	2.0
	2.0

(
TIMEt,	1.0
	1.0
	0.7


	0.5
	0.5

	0.3			tf
	0.2
	0.2
	0.1
	0.1
	0.05 0.07	0.1	0.2		0.3	0.5	0.7	1.0	2.0	3.0	5.0

IC, COLLECTOR CURRENT (AMP)

Figure 5. Turn±Off Time

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 4 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 3. At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations imposed by second breakdown. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltage shown on Figure 4 may be found at any case temperature by using the appropriate curve on Figure 6.

	100
(%)	80				SECOND BREAKDOWN DERATING
(%)	80
FACTOR	60
DERATING	60
	40		THERMAL DERATING
	40

POWER	20
POWER
	0	20	40	60	80	100	120	140	160
	0	20	40	60	80	100	120	140	160
				TC, CASE TEMPERATURE (°C)

Figure 6. Power Derating

Motorola Bipolar Power Transistor Device Data

2N6497				2N6498
	100
	100	T	J = 150		°C	V	CE =	10 V
		T
	70
	70
GAIN	50

			25		°C
			25		°C
CURRENTDC,	30
	30			± 55°C
	20			± 55°C
FE	20


h	10
	10
	7.0


	5.0

	0.05 0.07		0.1	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0
				IC, COLLECTOR CURRENT (AMP)
				Figure 7. DC Current Gain
	1.4
	1.4	TJ = 25°C
	1.2	TJ = 25°C


(VOLTS)	1.0

				VBE(sat) @ IC/IB = 5.0
				VBE(sat) @ IC/IB = 5.0
VOLTAGEV,	0.8
	0.8

	0.6				VBE @ VCE = 10 V
	0.6				VBE @ VCE = 10 V
	0.4

0.2VCE(sat) @ IC/IB = 5.0

IC/IB = 2.5

0.05	0.07	0.1	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0
			IC, COLLECTOR CURRENT (AMP)

Figure 9. ªOnº Voltages

(VOLTS)	4.0
	4.0																			TJ = 25°C
																				TJ = 25°C
VOLTAGE	3.2
	3.2
COLLECTOR±EMITTER,	2.4


	1.6



	0.8	IC = 1.0 A						2.0	A				3.0		A			5.0 A
CE
CE
V	0
V	0		0.02			0.05	0.1			0.2			0.5			1.0			2.0		5.0	10
	0.01		0.02			0.05	0.1			0.2			0.5			1.0			2.0		5.0	10
								IB, BASE CURRENT (mA)
					Figure 8. Collector Saturation Region
(mV/°C)	+ 4.0
	+ 4.0

	+ 3.0			*APPLIES FOR IC/IB v							hFE @			VCE		+ 10			V
	+ 3.0			*APPLIES FOR IC/IB v										3
COEFFICIENTS														3
COEFFICIENTS	+ 2.0
	+ 2.0

	+ 1.0		*θVC for VCE(sat)											25°C		to 150°			C
TEMPERATURE,	0

														± 55°C		to 25°			C
														± 55°C		to 25°			C
	± 1.0			θVB for VBE										25°C		to 150°			C
	± 2.0													25°C		to 150°			C


V														± 55			to 25°		C
														± 55			to 25°		C

θ	± 3.0

					0.1		0.2			0.3		0.5	0.7			1.0			2.0		3.0	5.0
	0.05 0.07				0.1		0.2			0.3		0.5	0.7			1.0			2.0		3.0	5.0

IC, COLLECTOR CURRENT (AMP)

Figure 10. Temperature Coefficients

	104
μA)	103	VCE = 200 V
μA)	103
(						CAPACITANCEC,(pF)
CURRENTCOLLECTOR	102	TJ = 150°C				CAPACITANCEC,(pF)
	102	TJ = 150°C
	101	100°C
	100
,	±1
C	±1
I	10	25°C
		25°C
	10±2	REVERSE			FORWARD
	10±2	± 0.2	0	+ 0.2	+ 0.4	+ 0.6
	± 0.1	± 0.2	0	+ 0.2	+ 0.4	+ 0.6
		VBE, BASE±EMITTER VOLTAGE (VOLTS)

1000
700
700
500					C	ib
500						ib
300


200
200												TJ = 25°		C
												TJ = 25°		C
100
100
70


50
50

30													C	ob
30														ob
20
20
10
10	0.6	1.0	2.0	4.0 6.0			10	20	40	60	100		200		400
0.4	0.6	1.0	2.0	4.0 6.0			10	20	40	60	100		200		400

VR, REVERSE VOLTAGE (VOLTS)

Figure 11. Collector Cutoff Region

Figure 12. Capacitance

4	Motorola Bipolar Power Transistor Device Data

2N6497 2N6498

PACKAGE DIMENSIONS

				±T±
	B		F	C
			T	S
4
Q			A
1	2	3	U
H
Z			K
Z
L				R
V				J
G
			D
	N

SEATING PLANE

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.570	0.620	14.48	15.75
B	0.380	0.405	9.66	10.28
C	0.160	0.190	4.07	4.82
D	0.025	0.035	0.64	0.88
F	0.142	0.147	3.61	3.73
G	0.095	0.105	2.42	2.66
H	0.110	0.155	2.80	3.93
J	0.018	0.025	0.46	0.64
K	0.500	0.562	12.70	14.27
L	0.045	0.060	1.15	1.52
N	0.190	0.210	4.83	5.33
Q	0.100	0.120	2.54	3.04
R	0.080	0.110	2.04	2.79
S	0.045	0.055	1.15	1.39
T	0.235	0.255	5.97	6.47
U	0.000	0.050	0.00	1.27
V	0.045	±±±	1.15	±±±
Z	±±±	0.080	±±±	2.04

STYLE 1:

PIN 1. BASE

2.COLLECTOR

3.EMITTER

4.COLLECTOR

CASE 221A±06

TO±220AB

ISSUE Y

Motorola Bipolar Power Transistor Device Data

2N6497 2N6498

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
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◊

2N6497/D

*2N6497/D*

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