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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N6338/D

High-Power NPN Silicon Transistors

. . . designed for use in industrial±military power amplifier and switching circuit applications.

• High Collector±Emitter Sustaining Voltage Ð

VCEO(sus) = 100 Vdc (Min) Ð 2N6338

VCEO(sus) = 120 Vdc (Min) Ð 2N6339

VCEO(sus) = 140 Vdc (Min) Ð 2N6340

VCEO(sus) = 150 Vdc (Min) Ð 2N6341

• High DC Current Gain Ð

hFE = 30 ± 120 @ IC = 10 Adc

hFE = 12 (Min) @ IC = 25 Adc

• Low Collector±Emitter Saturation Voltage Ð

VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc

•Fast Switching Times @ IC = 10 Adc tr = 0.3 μs (Max)

ts = 1.0 μs (Max) tf = 0.25 μs (Max)

•Complement to 2N6436±38

*MAXIMUM RATINGS

Rating	Symbol	2N6338	2N6339		2N6340	2N6341	Unit

Collector±Base Voltage	VCB	120	140		160	180	Vdc
Collector±Emitter Voltage	VCEO	100	120		140	150	Vdc
Emitter±Base Voltage	VEB		6.0				Vdc
Collector Current	IC			25			Adc
Continuous				25
Peak				50

Base Current	IB			10			Adc
Total Device Dissipation	PD		200				Watts
@ TC = 25_C			200				Watts
Derate above 25_C			1.14				W/°C

Operating and Storage Junction	TJ, Tstg		± 65 to +200				_C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic			Symbol			Max		Unit

Thermal Resistance, Junction to Case			θJC		0.875			_C/W
* Indicates JEDEC Registered Data.
	200
	200
(WATTS)	175
	175
	150
DISSIPATION	150
DISSIPATION	125
	125
	100
	100
POWER,	75
POWER,	50
D	50
D
P	25
	25
	0
	0	25	50	75	100	125	150	175	200
	0	25	50	75	100	125	150	175	200

TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 7

2N6338

2N6339

2N6340

2N6341*

*Motorola Preferred Device

25 AMPERE

POWER TRANSISTORS

NPN SILICON

100, 120, 140, 150 VOLTS

200 WATTS

CASE 1±07 TO±204AA (TO±3)

Motorola, Inc. 1995

2N6338		2N6339	2N6340	2N6341
	*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

			Characteristic		Symbol	Min	Max	Unit

	OFF CHARACTERISTICS

	Collector±Emitter Sustaining Voltage (1)			2N6338	VCEO(sus)	100	Ð	Vdc
	(IC = 50 mAdc, IB = 0)			2N6339		120	Ð
				2N6340		140	Ð
				2N6341		150	Ð

	Collector Cutoff Current				ICEO			μAdc
	(VCE = 50 Vdc, IB = 0)			2N6338		Ð	50
	(VCE = 60 Vdc, IB = 0)			2N6339		Ð	50
	(VCE = 70 Vdc, IB = 0)			2N6340		Ð	50
	(VCE = 75 Vdc, IB = 0)			2N6341		Ð	50
	Collector Cutoff Current				ICEX
	(VCE = Rated VCEO, VEB(off) = 1.5 Vdc)					Ð	10	μAdc
	(VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 150_C)					Ð	1.0	mAdc
	Collector Cutoff Current (VCB = Rated VCB, IE = 0)				ICBO	Ð	10	μAdc
	Emitter Cutoff Current (VBE = 6.0 Vdc, IC = 0)				IEBO	Ð	100	μAdc
	ON CHARACTERISTICS (1)

	DC Current Gain)				hFE			Ð
	(IC = 0.5 Adc, VCE = 2.0 Vdc)					50	Ð
	(IC = 10 Adc, VCE = 2.0 Vdc)					30	120
	(IC = 25 Adc, VCE = 2.0 Vdc)					12	Ð
	Collector Emitter Saturation Voltage				VCE(sat)			Vdc
	Collector Emitter Saturation Voltage				VCE(sat)			Vdc
	(IC = 10 Adc, IB = 1.0 Adc)					Ð	1.0
	(IC = 25 Adc, IB = 2.5 Adc)					Ð	1.8
	Base±Emitter Saturation Voltage				VBE(sat)			Vdc
	(IC = 10 Adc, IB = 1.0 Adc)					Ð	1.8
	(IC = 25 Adc, IB = 2.5 Adc)					Ð	2.5
	Base±Emitter On Voltage (IC = 10 Adc, VCE = 2.0 Vdc)				VBE(on)	Ð	1.8	Vdc
	DYNAMIC CHARACTERISTICS

	Current±Gain Ð Bandwidth Product (2)			(I C = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz)	fT	40	Ð	MHz
	Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)				Cob	Ð	300	pF
	Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)				Cob	Ð	300	pF
	SWITCHING CHARACTERISTICS

	Rise Time (VCC ≈ 80 Vdc, IC = 10Adc, IB1 = 1.0 Adc, VBE(off) = 6.0 Vdc)				tr	Ð	0.3	μs
	Storage Time (VCC ≈ 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)				ts	Ð	1.0	μs
	Fall Time (VCC ≈ 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)				tf	Ð	0.25	μs

* Indicates JEDEC Registered Data.

(1)Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.

(2)fT = |hfe| •ftest.

		VCC
		+ 80 V
		RC
		8.0 OHMS
10 μs	RB	SCOPE
+ 11 V	10 OHMS
0
± 9.0 V	1N4933
± 9.0 V
tr, tf v 10 ns	± 5.0 V
DUTY CYCLE = 1.0%	± 5.0 V
DUTY CYCLE = 1.0%

NOTE: For information on Figures 3 and 6, RB and RC were varied to obtain desired test conditions.

	1000
	700
	700												VCC	= 80	V
	500												VCC	= 80	V
	500												IC/IB = 10
													IC/IB = 10
	300			td		@ VBE(off)		= 6.0		V			TJ = 25°C
	300
(ns)	200
	200

TIME	100				t	r
	100				t	r
t,	70
t,	70
	50
	50
	30


	20
	20
	10

		0.5	0.7	1.0			2.0		3.0		5.0	7.0	10			20	30
	0.3	0.5	0.7	1.0			2.0		3.0		5.0	7.0	10			20	30

IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Time Test Circuit

Figure 3. Turn±On Time

2	Motorola Bipolar Power Transistor Device Data

															2N6338		2N6339		2N6340			2N6341
	THERMAL RESISTANCE (NORMALIZED)	1.0
		0.7	D = 0.5
		0.5	D = 0.5
r(t), EFFECTIVE TRANSIENT		0.5
		0.3		0.2
				0.2
		0.2
		0.1		0.1									P(pk)				θJC = r(t) θJC
		0.1		0.05									P(pk)				θJC = r(t) θJC
		0.07		0.05													θJC = 0.875°C/W MAX
				0.02													θJC = 0.875°C/W MAX
																	D CURVES APPLY FOR POWER
		0.05

														t1			PULSE TRAIN SHOWN
		0.03			0.01									t1	t2		PULSE TRAIN SHOWN
		0.03			0.01										t2		READ TIME AT t1
		0.02		SINGLE PULSE										DUTY CYCLE, D = t1/t2			TJ(pk) ± TC = P(pk) θJC(t)
														DUTY CYCLE, D = t1/t2
		0.01		0.02 0.03	0.05	0.1	0.2	0.3	0.5	1.0	2.0	3.0	5.0	10	20	30	50	100	200	300	500	1000
		0.01		0.02 0.03	0.05	0.1	0.2	0.3	0.5	1.0	2.0	3.0	5.0	10	20	30	50	100	200	300	500	1000

t, TIME (ms)

Figure 4. Thermal Response

	100
	50
(AMP)	20									200 μs
	20
	10				dc				1.0 ms
CURRENT	5.0				dc			5.0 ms
	5.0							5.0 ms
	2.0		TJ = 200°C
	1.0		BONDING WIRE LIMITED
,COLLECTOR	1.0
	0.5
	0.5		THERMALLY LIMITED @ TC = 25°C
	0.2			(SINGLE PULSE)
	0.1		SECOND BREAKDOWN LIMITED
	0.1		CURVES APPLY BELOW					2N6338
	0.05		CURVES APPLY BELOW					2N6338
C	0.05			RATED VCEO				2N6339
I				RATED VCEO				2N6339
	0.02							2N6340
	0.02							2N6341
	0.01							2N6341
	0.01	3.0	5.0	7.0	10	20	30	50	70	100	200
	2.0	3.0	5.0	7.0	10	20	30	50	70	100	200

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 5. Active Region Safe Operating Area

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC±VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk) v 200_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations imposed by second breakdown.

	5.0
	5.0
	3.0	ts	VCC = 80 V
	2.0	ts	IB1 = IB2
	2.0		IC/IB = 10
			IC/IB = 10
	1.0		TJ = 25°C
μs)	1.0
	0.7


(
TIMEt,	0.5
	0.5
	0.3

0.2tf

0.1
0.07
0.05	0.5	0.7	1.0	2.0	3.0	5.0	10	20	30
0.3	0.5	0.7	1.0	2.0	3.0	5.0	10	20	30

IC, COLLECTOR CURRENT (AMP)

Figure 6. Turn±Off Time

	5000
	5000
	3000				Cib			TJ	= 25	°C
	2000				Cib
(pF)	2000
	1000

CAPACITANCEC,
	200
	200							Cob
	700
	500
	300
	300
	100




	70


	50
	50	0.2	0.5	1.0	2.0	5.0	10	20			50	100
	0.1	0.2	0.5	1.0	2.0	5.0	10	20			50	100

VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

Motorola Bipolar Power Transistor Device Data

2N6338 2N6339 2N6340 2N6341

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

±T±

SEATING

2. CONTROLLING DIMENSION: INCH.

PLANE

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO±204AA OUTLINE SHALL APPLY.

D 2 PL

INCHES

MILLIMETERS

0.13 (0.005) M

DIM

MIN

MAX

MIN

MAX

1.550 REF

39.37 REF

±Y±

±±±

1.050

±±±

26.67

0.250

0.335

6.35

8.51

0.038

0.043

0.97

1.09

0.055

0.070

1.40

1.77

0.430 BSC

10.92 BSC

0.215 BSC

5.46 BSC

0.440

0.480

11.18

12.19

0.665 BSC

16.89 BSC

±Q±

±±±

0.830

±±±

21.08

0.13 (0.005) M

0.151

0.165

3.84

4.19

1.187 BSC

30.15 BSC

0.131

0.188

3.33

4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

CASE 1±07

TO±204AA (TO±3)

ISSUE Z

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

◊

2N6338/D

*2N6338/D*

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