MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by TIP31A/D
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general purpose amplifier and switching applications.
• Collector±Emitter Saturation Voltage Ð
VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
• Collector±Emitter Sustaining Voltage Ð
VCEO(sus) = 60 Vdc (Min) Ð TIP31A, TIP32A
VCEO(sus) = 80 Vdc (Min) Ð TIP31B, TIP32B
VCEO(sus) = 100 Vdc (Min) Ð TIP31C, TIP32C
•High Current Gain Ð Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc
•Compact TO±220 AB Package
*MAXIMUM RATINGS
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TIP31A |
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TIP318 |
TIP31C |
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Rating |
Symbol |
TIP32A |
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TIP32B |
TIP32C |
Unit |
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Collector±Emitter Voltage |
VCEO |
60 |
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80 |
100 |
Vdc |
Collector±Base Voltage |
VCB |
60 |
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80 |
100 |
Vdc |
Emitter±Base Voltage |
VEB |
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5.0 |
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Vdc |
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Collector Current Ð Continuous |
IC |
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3.0 |
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Adc |
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Peak |
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5.0 |
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Base Current |
IB |
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1.0 |
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Adc |
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Total Power Dissipation |
PD |
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@ TC = 25_C |
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40 |
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Watts |
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Derate above 25_C |
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0.32 |
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W/_C |
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Total Power Dissipation |
PD |
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@ TA = 25_C |
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2.0 |
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Watts |
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Derate above 25_C |
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0.016 |
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W/_C |
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Unclamped Inductive |
E |
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32 |
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mJ |
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Load Energy (1) |
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Operating and Storage Junction |
TJ, Tstg |
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± 65 to +150 |
_C |
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Temperature Range |
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THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Ambient |
RθJA |
62.5 |
_C/W |
Thermal Resistance, Junction to Case |
RθJC |
3.125 |
_C/W |
(1) IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 Ω..
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
NPN
TIP31A TIP31B*
TIP31C*
PNP
TIP32A TIP32B* TIP32C*
*Motorola Preferred Device
3 AMPERE
POWER TRANSISTORS COMPLEMENTARY SILICON
60 ± 80 ± 100 VOLTS
40 WATTS
CASE 221A±06
TO±220AB
Motorola, Inc. 1995
TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic |
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Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage (1) |
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VCEO(sus) |
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Vdc |
(IC = 30 mAdc, IB = 0) |
TIP31A, TIP32A |
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60 |
Ð |
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TIP31B, TIP32B |
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80 |
Ð |
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TIP31C, TIP32C |
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100 |
Ð |
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Collector Cutoff Current (VCE = 30 Vdc, IB = 0) |
TIP31A, TIP32A |
ICEO |
Ð |
0.3 |
mAdc |
Collector Cutoff Current (VCE = 60 Vdc, IB = 0) |
TIP31B, TIP31C |
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Ð |
0.3 |
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TIP32B, TIP32C |
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Ð |
0.3 |
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Collector Cutoff Current |
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ICES |
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μAdc |
(VCE = 60 Vdc, VEB = 0) |
TIP31A, TIP32A |
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Ð |
200 |
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(VCE = 80 Vdc, VEB = 0) |
TIP31B, TIP32B |
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Ð |
200 |
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(VCE = 100 Vdc, VEB = 0) |
TIP31C, TIP32C |
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Ð |
200 |
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Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) |
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IEBO |
Ð |
1.0 |
mAdc |
ON CHARACTERISTICS (1) |
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DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) |
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hFE |
25 |
Ð |
Ð |
DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) |
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10 |
50 |
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Collector±Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc) |
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VCE(sat) |
Ð |
1.2 |
Vdc |
Base±Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) |
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VBE(on) |
Ð |
1.8 |
Vdc |
DYNAMIC CHARACTERISTICS |
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Current±Gain Ð Bandwidth Product (I C = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) |
fT |
3.0 |
Ð |
MHz |
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Small±Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) |
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hfe |
20 |
Ð |
Ð |
(1) Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%. |
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TC |
TA |
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40 |
4.0 |
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(WATTS) |
30 |
3.0 |
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TC |
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DISSIPATION |
20 |
2.0 |
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, POWER |
10 |
1.0 |
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TA |
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D |
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P |
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0 |
0 |
20 |
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120 |
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0 |
40 |
60 |
80 |
100 |
140 |
160 |
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T, TEMPERATURE (°C) |
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Figure 1. Power Derating
TURN±ON PULSE |
VCC |
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2.0 |
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APPROX |
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RC |
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+11 V |
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IC/IB = 10 |
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1.0 |
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TJ = 25°C |
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Vin |
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SCOPE |
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0.7 |
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Vin 0 |
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t @ V |
CC |
= 30 V |
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VEB(off) |
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RB |
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0.5 |
r |
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t1 |
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(μs) |
0.3 |
tr @ VCC = 10 V |
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Cjd << Ceb |
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APPROX |
t3 |
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TIMEt, |
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± 4.0 V |
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+11 V |
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t1 ≤ 7.0 ns |
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0.1 |
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100 < t2 < 500 μs |
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0.07 |
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td @ VEB(off) = 2.0 V |
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Vin |
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t3 < 15 ns |
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0.05 |
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t2 |
DUTY CYCLE ≈ 2.0% |
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0.03 |
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0.02 |
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TURN±OFF PULSE |
APPROX ±9.0 V |
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0.05 0.07 0.1 |
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0.5 0.7 1.0 |
3.0 |
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0.03 |
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0.3 |
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RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 2. Switching Time Equivalent Circuit |
Figure 3. Turn±On Time |
3±2 |
Motorola Bipolar Power Transistor Device Data |
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TIP31A |
TIP31B |
TIP31C |
TIP32A |
TIP32B |
TIP32C |
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(NORMALIZED) |
1.0 |
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0.7 |
D = 0.5 |
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0.5 |
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RESISTANCE |
0.3 |
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0.2 |
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0.2 |
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0.1 |
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0.1 |
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P(pk) |
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THERMAL |
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0.05 |
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ZqJC(t) = r(t) RqJC |
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0.07 |
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RqJC(t) = 3.125°C/W MAX |
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0.05 |
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0.02 |
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D CURVES APPLY FOR POWER |
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PULSE TRAIN SHOWN |
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t1 |
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TRANSIENT |
0.03 |
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0.02 |
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READ TIME AT t1 |
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t2 |
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0.01 |
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TJ(pk) ± TC = P(pk) ZqJC(t) |
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SINGLE PULSE |
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DUTY CYCLE, D = t1/t2 |
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0.01 |
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r(t), |
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1.0 |
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1.0 |
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100 |
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1.0 k |
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0.01 |
0.02 |
0.05 |
0.2 |
0.5 |
2.0 |
5.0 |
10 |
20 |
50 |
200 |
500 |
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t, TIME (ms)
Figure 4. Thermal Response
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10 |
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(AMP) |
5.0 |
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100 ms |
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5.0 ms |
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CURRENT |
2.0 |
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SECONDARY BREAKDOWN |
1.0 ms |
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1.0 |
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COLLECTOR |
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LIMITED @ TJ ≤ 150°C |
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0.5 |
THERMAL LIMIT @ TC = 25°C |
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(SINGLE PULSE) |
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BONDING WIRE LIMIT |
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, |
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TIP31A, TIP32A |
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C |
0.2 |
CURVES APPLY |
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I |
TIP31B, TIP32B |
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BELOW RATED VCEO |
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TIP31C, TIP32C |
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0.1 |
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5.0 |
10 |
20 |
50 |
100 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS) |
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Figure 5. Active Region Safe Operating Area
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the limitations imposed by second breakdown.
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3.0 |
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IB1 |
= IB2 |
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300 |
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2.0 |
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TJ = + 25°C |
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ts′ |
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IC/IB = 10 |
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200 |
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1.0 |
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ts′= ts ± 1/8 tf |
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tf @ VCC = 30 V |
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0.7 |
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TJ = 25°C |
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(pF) |
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t, TIME ( μs) |
0.5 |
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CAPACITANCE |
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0.3 |
tf @ VCC = 10 V |
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100 |
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Ceb |
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0.2 |
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70 |
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0.1 |
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50 |
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0.07 |
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Ccb |
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0.05 |
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0.03 |
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30 |
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0.03 |
0.05 0.07 |
0.1 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
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0.1 |
0.2 |
0.3 |
0.5 |
1.0 |
2.0 |
3.0 |
5.0 |
10 |
20 |
30 40 |
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IC, COLLECTOR CURRENT (AMP) |
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VR, REVERSE VOLTAGE (VOLTS) |
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Figure 6. Turn±Off Time |
Figure 7. Capacitance |
Motorola Bipolar Power Transistor Device Data |
3±3 |
TIP31A |
TIP31B |
TIP31C |
TIP32A |
TIP32B |
TIP32C |
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500 |
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(VOLTS) |
2.0 |
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300 |
T |
J |
= 150°C |
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V |
CE |
= 2.0 V |
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TJ = 25°C |
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VOLTAGE |
1.6 |
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CURRENT GAIN |
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100 |
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25°C |
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1.2 |
IC = 0.3 A |
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1.0 A |
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3.0 A |
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70 |
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± 55°C |
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50 |
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DC |
30 |
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COLLECTOR±EMITTER |
0.8 |
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, |
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FE |
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h |
10 |
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0.4 |
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7.0 |
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CE |
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5.0 |
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0 |
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V |
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0.03 |
0.05 |
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0.07 |
0.1 |
0.3 |
0.5 |
0.7 |
1.0 |
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3.0 |
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1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
200 |
500 |
1000 |
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IC, COLLECTOR CURRENT (AMP) |
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IB, BASE CURRENT (mA) |
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Figure 8. DC Current Gain |
Figure 9. Collector Saturation Region |
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1.4 |
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TJ = 25°C |
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1.2 |
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(VOLTS) |
1.0 |
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0.8 |
VBE(sat) @ IC/IB = 10 |
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V, VOLTAGE |
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0.6 |
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VBE @ VCE = 2.0 V |
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0.4 |
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0.2 |
VCE(sat) @ IC/IB = 10 |
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0 |
0.01 |
0.02 0.03 0.05 |
0.1 |
0.2 0.3 |
0.5 |
1.0 |
2.0 3.0 |
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0.003 0.005 |
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IC, COLLECTOR CURRENT (AMPS) |
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Figure 10. ªOnº Voltages
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103 |
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102 |
VCE = 30 V |
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μA) |
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( |
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TJ = 150°C |
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CURRENT |
101 |
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0 |
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° |
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,COLLECTOR |
10 |
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100 C |
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10±1 |
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REVERSE |
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FORWARD |
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±2 |
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° |
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C |
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I |
10 |
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25 C |
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10±3 |
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ICES |
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± 0.3 |
± 0.2 ± 0.1 |
0 |
+ 0.1 |
+ 0.2 + 0.3 |
+ 0.4 + 0.5 |
+ 0.6 |
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± 0.4 |
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VBE, BASE±EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut±Off Region
(mV/°C) |
+ 2.5 |
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+ 2.0 |
*APPLIES FOR IC/IB ≤ hFE/2 |
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+ 1.5 |
TJ = ± 65°C TO + 150°C |
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COEFFICIENTS |
+ 1.0 |
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+ 0.5 |
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*θVC FOR VCE(sat) |
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0 |
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, TEMPERATURE |
± 0.5 |
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± 1.0 |
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± 1.5 |
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θVB FOR VBE |
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± 2.0 |
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V |
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θ |
± 2.5 |
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0.003 0.005 |
0.01 |
0.02 |
0.05 |
0.1 |
0.2 0.3 |
0.5 |
1.0 |
2.0 3.0 |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 11. Temperature Coefficients
(OHMS) |
107 |
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RESISTANCE |
106 |
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IC = 10 x ICES |
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VCE = 30 V |
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IC ≈ ICES |
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BASE±EMITTER |
105 |
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104 |
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IC = 2 x ICES |
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,EXTERNAL |
103 |
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(TYPICAL ICES VALUES |
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OBTAINED FROM FIGURE 12) |
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|
||||
102 |
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BE |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
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R |
20 |
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TJ, JUNCTION TEMPERATURE (°C) |
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|||
Figure 13. Effects of Base±Emitter Resistance
3±4 |
Motorola Bipolar Power Transistor Device Data |
TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C
PACKAGE DIMENSIONS
|
|
|
|
±T± |
|
B |
|
F |
C |
|
|
|
T |
S |
4 |
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Q |
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A |
|
1 |
2 |
3 |
U |
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H |
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Z |
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K |
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L |
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R |
V |
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J |
G |
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D |
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N |
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|
SEATING PLANE
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.
|
INCHES |
MILLIMETERS |
||
DIM |
MIN |
MAX |
MIN |
MAX |
A |
0.570 |
0.620 |
14.48 |
15.75 |
B |
0.380 |
0.405 |
9.66 |
10.28 |
C |
0.160 |
0.190 |
4.07 |
4.82 |
D |
0.025 |
0.035 |
0.64 |
0.88 |
F |
0.142 |
0.147 |
3.61 |
3.73 |
G |
0.095 |
0.105 |
2.42 |
2.66 |
H |
0.110 |
0.155 |
2.80 |
3.93 |
J |
0.018 |
0.025 |
0.46 |
0.64 |
K |
0.500 |
0.562 |
12.70 |
14.27 |
L |
0.045 |
0.060 |
1.15 |
1.52 |
N |
0.190 |
0.210 |
4.83 |
5.33 |
Q |
0.100 |
0.120 |
2.54 |
3.04 |
R |
0.080 |
0.110 |
2.04 |
2.79 |
S |
0.045 |
0.055 |
1.15 |
1.39 |
T |
0.235 |
0.255 |
5.97 |
6.47 |
U |
0.000 |
0.050 |
0.00 |
1.27 |
V |
0.045 |
±±± |
1.15 |
±±± |
Z |
±±± |
0.080 |
±±± |
2.04 |
STYLE 1:
PIN 1. BASE
2.COLLECTOR
3.EMITTER
4.COLLECTOR
CASE 221A±06
TO±220AB
ISSUE Y
Motorola Bipolar Power Transistor Device Data |
3±5 |
TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and 
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◊ TIP31A/D
*TIP31A/D*