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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BD237/D

Plastic Medium Power Silicon

NPN Transistor

. . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

• DC Current Gain Ð h FE = 40 (Min) @ IC = 0.15 Adc

MAXIMUM RATINGS

BD237

2.0 AMPERES

POWER TRANSISTORS

NPN SILICON

80 VOLTS

25 WATTS

Rating	Symbol	Value	Unit

Collector±Emitter Voltage	VCEO	80	Vdc
Collector±Base Voltage	VCBO	100	Vdc
Emitter±Base Voltage	VEBO	5.0	Vdc
Collector Current	IC	2.0	Adc
Base Current	IB	1.0	Adc
Total Device Dissipation @ TC = 25_C	PD	25	Watts
Operating and Storage Junction	TJ, Tstg	± 55 to +150	_C
Temperature Range

THERMAL CHARACTERISTICS
						CASE 77±08
Characteristic	Symbol	Max		Unit		CASE 77±08
Characteristic	Symbol	Max		Unit		TO±225AA TYPE

Thermal Resistance, Junction to Case	θJC	5.0		_C/W
Thermal Resistance, Junction to Case	θJC	5.0		_C/W
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic			Symbol		Min	Max	Unit

Collector±Emitter Sustaining Voltage*			V(BR)CEO		80	Ð	Vdc
(IC = 0.1 Adc, IB = 0)
Collector Cutoff Current			ICBO		Ð	0.1	mAdc
(VCB = 100 Vdc, IE = 0)
Emitter Cutoff Current				IEBO	Ð	1.0	mAdc
(VBE = 5.0 Vdc, IC = 0)
DC Current Gain
(IC = 0.15 A, VCE = 2.0 V)				h	40	Ð
(IC = 1.0 A, VCE = 2.0 V)				FE1
(IC = 1.0 A, VCE = 2.0 V)				hFE2	25	Ð
Collector±Emitter Saturation Voltage*			VCE(sat)		Ð	0.6	Vdc
(IC = 1.0 Adc, IB = 0.1 Adc)
Base±Emitter On Voltage*			VBE(on)		Ð	1.3	Vdc
(IC = 1.0 Adc, VCE = 2.0 Vdc)
Current±Gain Ð Bandwidth Product				fT	3.0	Ð	MHz
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
* Pulse Test: Pulse Width x 300 μs, Duty Cycle x 2.0%.

REV 7

Motorola, Inc. 1995

BD237
	10				100 μs
					100 μs
(AMP)	3			1 ms
CURRENT				5 ms
	1	TJ = 150°C	dc
	1
, COLLECTOR	0.3
, COLLECTOR
C				BD236
I				BD236
	0.1			BD237
	0.1
	1	3	10	30	100
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 1. Active Region Safe Operating Area

The Safe Operating Area Curves indicate IC ± VCE limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below the maximum TJ, power±temperature derating must be observed for both steady state and pulse power conditions.

hFE, DC CURRENT GAIN (NORMALIZED)

(VOLTS)	1.0
	0.8

VOLTAGE										IC =		0.1	A					0.25 A						0.5	A							1.0		A
VOLTAGE

COLLECTOR±EMITTER,	0.6
	0.6																																						TJ =	25	°C
	0.4



CE	0.2


	0

			0.3				0.5						1.0			2.0		3.0			5.0				10			20					30				50			100			200
V	0.2		0.3				0.5						1.0			2.0		3.0			5.0				10			20					30				50			100			200
																				IB, BASE CURRENT (mA)
																Figure 2. Collector Saturation Region
1000																							1.5
700
500															V	CE	=	2.0	V
															V								1.2			TJ = 25°C
																										TJ = 25°C
300																						(VOLTS)


200			T	J	=	+ 150°		C															0.9
			T	J	=	+ 150°		C

100

																						VOLTAGE					VBE(sat)		@ IC/IB =					10


70																							0.6
							°
							°
50			T	J	=	+ 25 C
				J	=	+ 25 C

																														VBE @ V				CE	=	2.0		V
30
			T	J	=	+ 55°C																	0.3


20
20
10																							0					V	CE(sat) @ IC/IB = 10
																												V	CE(sat) @ IC/IB = 10
		5.0	10				20		30		50		100	200 300		500		1000 2000									5.0	10			20		30		50		100			200 300		500	1000 2000
2.0 3.0		5.0	10				20		30		50		100	200 300		500		1000 2000					2.0 3.0				5.0	10			20		30		50		100			200 300		500	1000 2000
							IC, COLLECTOR CURRENT (mA)																							IC, COLLECTOR CURRENT (mA)
							Figure 3. Current Gain																							Figure 4. ªOnº Voltages

NORMALIZED EFFECTIVE TRANSIENT	THERMAL RESISTANCE
r(t),

1.0
0.7	D = 0.5
0.5
0.3	D = 0.2
0.2	D = 0.1
	D = 0.1						SINGLE PULSE
	D = 0.05						SINGLE PULSE			θJC(t) = r(t) θJC					P(pk)
0.1	D = 0.05									θJC(t) = r(t) θJC					P(pk)
0.1										θJC = 4.16°C/W MAX
0.07										θJC = 4.16°C/W MAX
0.07	D = 0.01									θ	°
0.05	D = 0.01									JC = 3.5 C/W TYP
0.05										D CURVES APPLY FOR POWER						t1
										D CURVES APPLY FOR POWER
0.03										PULSE TRAIN SHOWN
										PULSE TRAIN SHOWN						t2
										READ TIME AT t1						t2
0.02										READ TIME AT t1			θJC(t)
0.02										TJ(pk) ± TC = P(pk)			θJC(t)		DUTY CYCLE, D = t /t
																		1 2
0.01	0.02 0.03	0.05	0.1	0.2	0.3	0.5	1.0	2.0	3.0	5.0	10	20	30	50	100	200	300	500	1000
0.01	0.02 0.03	0.05	0.1	0.2	0.3	0.5	1.0	2.0	3.0	5.0	10	20	30	50	100	200	300	500	1000
							t, TIME or PULSE WIDTH (ms)

Figure 5. Thermal Response

2	Motorola Bipolar Power Transistor Device Data

BD237

PACKAGE DIMENSIONS

±B±
U		F	C
Q			M
		±A±	M
		±A±
1	2	3
H		K
		K

V	J
G	R
S	0.25 (0.010) M A M B M
D 2 PL

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.425	0.435	10.80	11.04
B	0.295	0.305	7.50	7.74
C	0.095	0.105	2.42	2.66
D	0.020	0.026	0.51	0.66
F	0.115	0.130	2.93	3.30
G	0.094 BSC		2.39 BSC
H	0.050	0.095	1.27	2.41
J	0.015	0.025	0.39	0.63
K	0.575	0.655	14.61	16.63
M	5	TYP	5	TYP
Q	0.148	0.158	3.76	4.01
R	0.045	0.055	1.15	1.39
S	0.025	0.035	0.64	0.88
U	0.145	0.155	3.69	3.93
V	0.040	±±±	1.02	±±±

0.25 (0.010) M A M B M	STYLE 1:
0.25 (0.010) M A M B M	PIN 1.	EMITTER
	2.	COLLECTOR
	3.	BASE

CASE 77±08

TO±225AA TYPE

ISSUE V

Motorola Bipolar Power Transistor Device Data

BD237

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
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