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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BUV21/D

SWITCHMODE Series

NPN Silicon Power Transistor

. . . designed for high speed, high current, high power applications.

High DC current gain:

hFE min. = 20 at IC = 12 A

Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 8 A Very fast switching times:

TF max. = 0.4 μs at IC = 25 A

MAXIMUM RATINGS

BUV21

40 AMPERES

NPN SILICON

POWER

METAL TRANSISTOR

200 VOLTS

250 WATTS

CASE 197A±05

TO±204AE

(TO±3)

Rating

Symbol

Value

Unit

 

 

 

 

Collector±Emitter Voltage

VCEO(sus)

200

Vdc

Collector±Base Voltage

VCBO

250

Vdc

Emitter±Base Voltage

VEBO

7

Vdc

Collector±Emitter Voltage (VBE = ±1.5 V)

VCEX

250

Vdc

Collector±Emitter Voltage (RBE = 100 Ω)

VCER

240

Vdc

Collector±Current Ð Continuous

IC

40

Adc

Ð Peak (pw v 10 ms)

ICM

50

Apk

Base±Current continuous

IB

8

Adc

Total Power Dissipation @ TC = 25_C

PD

150

Watts

Operating and Storage Junction Temperature Range

TJ, Tstg

± 65 to 200

_C

THERMAL CHARACTERISTICS

 

 

 

 

 

 

 

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance, Junction to Case

θJC

0.7

_C/W

1.0

0.8

FACTOR

0.6

DERATING

0.4

 

 

0.2

0

SWITCHMODE is a trademark of Motorola, Inc.

REV 7

40

80

120

160

200

 

TC, TEMPERATURE (°C)

 

 

Figure 1. Power Derating

Motorola, Inc. 1995

BUV21

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

 

 

Symbol

Min

Max

Unit

 

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS1

 

 

 

 

 

 

 

Collector±Emitter Sustaining Voltage

 

 

 

VCEO(sus)

200

 

Vdc

(IC = 200 mA, IB = 0, L = 25 mH)

 

 

 

 

 

 

 

Collector Cutoff Current at Reverse Bias:

 

 

 

ICEX

 

 

mAdc

(VCE = 250 V, VBE = ±1.5 V)

 

 

 

 

 

3.0

 

(VCE = 250 V, VBE = ±1.5 V, TC = 125_C)

 

 

 

 

12.0

 

Collector±Emitter Cutoff Current

 

 

 

ICEO

 

3.0

mAdc

(VCE = 160 V)

 

 

 

 

 

 

 

Emitter±Base Reverse Voltage

 

 

 

VEBO

7

 

V

(IE = 50 mA)

 

 

 

 

 

 

 

Emitter±Cutoff Current

 

 

 

IEBO

 

1.0

mAdc

(VEB = 5 V)

 

 

 

 

 

 

 

SECOND BREAKDOWN

 

 

 

 

 

 

 

 

 

 

 

 

 

Second Breakdown Collector Current with base forward biased

IS/b

 

 

Adc

(VCE = 20 V, t = 1 s)

 

 

 

 

12

 

 

(VCE = 140 V, t = 1 s)

 

 

 

 

0.15

 

 

ON CHARACTERISTICS1

 

 

 

 

 

 

 

DC Current Gain

 

 

 

hFE

 

 

 

(IC = 12 A, VCE = 2 V)

 

 

 

 

20

60

 

(IC = 25 A, VCE = 4 V)

 

 

 

 

10

 

 

Collector±Emitter Saturation Voltage

 

 

 

VCE(sat)

 

 

Vdc

(IC = 12 A, IB = 1.2 A)

 

 

 

 

 

0.6

 

(IC = 25 A, IB = 3 A)

 

 

 

 

 

1.5

 

Base±Emitter Saturation Voltage

 

 

 

VBE(sat)

 

1.5

Vdc

(IC = 25 A, IB = 3 A)

 

 

 

 

 

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Current Gain ± Bandwidth Product

 

 

 

fT

8.0

 

MHz

(VCE = 15 V, IC = 2 A, f = 4 MHz)

 

 

 

 

 

 

 

SWITCHING CHARACTERISTICS (Resistive Load)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Turn-on Time

 

(IC = 25 A, IB1 = IB2 = 3 A,

ton

 

1.0

μs

Storage Time

 

ts

 

1.8

 

 

V = 100 V, R

 

= 4 Ω)

 

 

 

 

CC

C

 

 

 

 

 

Fall Time

 

 

 

 

tf

 

0.4

 

1 Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2%.

 

 

 

 

 

 

2

Motorola Bipolar Power Transistor Device Data

 

40

 

 

 

(A)

10

 

 

 

CURRENT

 

 

 

1

 

 

 

,COLLECTOR

 

 

 

0.1

 

 

 

C

 

 

 

 

I

 

 

 

 

 

1

10

100

200

VCE, COLLECTOR±EMITTER VOLTAGE (V)

Figure 2. Active Region Safe Operating Area

 

2.0

 

 

 

IC/IB = 8

 

1.6

 

(V)

1.2

 

VOLTAGE

 

0.8

VBE

V,

 

 

 

0.4

 

 

 

VCE

 

0

10

 

1

IC, COLLECTOR CURRENT (A)

Figure 3. ªOnº Voltages

 

 

 

 

 

VCE = 100 V

 

 

 

 

 

 

IC/IB1 = 8

 

 

3.0

 

 

 

IB1 = IB2

 

μs)

2.0

 

 

 

 

 

 

 

 

 

 

 

(

1.0

 

 

 

 

 

TIME

 

 

 

tS

 

 

 

 

 

 

t,

 

 

 

 

 

 

 

0.4

 

 

 

 

 

 

0.3

 

 

 

ton

 

 

0.2

 

 

 

 

 

 

 

 

tF

 

 

 

 

 

 

 

 

0

5

10

15

20

25

IC, COLLECTOR CURRENT (A)

Figure 5. Resistive Switching Performance

BUV21

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 2 is based on TC = 25_C, TJ(pk) is variable depending on power level. Second breakdown

limitations do not derate the same as thermal limitations.

At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

50

 

 

 

 

VCE = 5 V

40

 

 

30

 

 

20

 

 

10

 

 

0

1

10

100

IC, COLLECTOR CURRENT (A)

Figure 4. DC Current Gain

 

 

VCC

 

 

 

10,000 μF

 

 

RC

 

 

IB2

 

 

IB1

RB

VCC =

100 V

 

 

RC =

4 Ω

 

 

RB =

2.2 Ω

RC ± RB: Non inductive resistances

Figure 6. Switching Times Test Circuit

Motorola Bipolar Power Transistor Device Data

3

BUV21

PACKAGE DIMENSIONS

 

A

 

 

 

 

 

 

 

 

 

 

 

 

N

 

 

 

 

 

 

 

 

 

 

 

 

C

±T±

SEATING

 

 

NOTES:

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1. DIMENSIONING AND TOLERANCING PER ANSI

 

E

 

 

PLANE

 

 

Y14.5M, 1982.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D 2 PL

K

 

 

 

 

 

2. CONTROLLING DIMENSION: INCH.

 

 

 

 

 

 

 

 

INCHES

MILLIMETERS

 

 

 

 

 

 

 

 

 

0.30 (0.012) M

T

Q

M

Y

M

 

 

DIM

MIN

MAX

MIN

MAX

 

U

 

 

 

 

 

 

A

1.530 REF

38.86 REF

 

±Y±

 

 

 

 

B

0.990

1.050

25.15

26.67

V

L

 

 

 

 

 

 

 

 

 

 

C

0.250

0.335

6.35

8.51

 

2

 

 

 

 

 

 

D

0.057

0.063

1.45

1.60

 

 

B

 

 

 

 

E

0.060

0.070

1.53

1.77

H

G

 

 

 

 

 

G

0.430 BSC

10.92 BSC

1

 

 

 

 

 

 

H

0.215 BSC

5.46 BSC

 

 

 

 

 

 

 

K

0.440

0.480

11.18

12.19

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

L

0.665 BSC

16.89 BSC

 

±Q±

 

 

 

 

 

 

N

0.760

0.830

19.31

21.08

 

0.25 (0.010) M

T

Y

M

 

 

 

Q

0.151

0.165

3.84

4.19

 

 

 

 

U

1.187 BSC

30.15 BSC

 

 

 

 

 

 

 

 

V

0.131

0.188

3.33

4.77

 

 

 

 

 

 

 

 

STYLE 1:

 

 

 

 

 

 

 

 

 

 

 

PIN 1. BASE

 

 

 

 

 

 

 

 

 

 

 

 

2. EMITTER

 

 

 

 

 

 

 

 

 

 

CASE: COLLECTOR

 

 

CASE 197A±05

TO±204AE (TO±3)

ISSUE J

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447

6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315

MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design±NET.com

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

BUV21/D

*BUV21/D*

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