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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJE13005/D

Designer's Data Sheet

SWITCHMODE Series

NPN Silicon Power Transistors

These devices are designed for high±voltage, high±speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator's, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.

SPECIFICATION FEATURES:

•VCEO(sus) 400 V

•Reverse Bias SOA with Inductive Loads @ TC = 100_C

•Inductive Switching Matrix 2 to 4 Amp, 25 and 100_C

. . . tc @ 3A, 100_C is 180 ns (Typ)

•700 V Blocking Capability

•SOA and Switching Applications Information.

MAXIMUM RATINGS

MJE13005*

*Motorola Preferred Device

4 AMPERE

NPN SILICON

POWER TRANSISTOR

400 VOLTS

75 WATTS

CASE 221A±06

TO±220AB

Rating	Symbol	Value	Unit

Collector±Emitter Voltage	VCEO(sus)	400	Vdc
Collector±Emitter Voltage	VCEV	700	Vdc
Emitter Base Voltage	VEBO	9	Vdc
Collector Current Ð Continuous	IC	4	Adc
Ð Peak (1)	ICM	8
Base Current Ð Continuous	IB	2	Adc
Ð Peak (1)	IBM	4
Emitter Current Ð Continuous	IE	6	Adc
Ð Peak (1)	IEM	12
Total Power Dissipation @ TA = 25_C	PD	2	Watts
Derate above 25_C		16	mW/_C

Total Power Dissipation @ TC = 25_C	PD	75	Watts
Derate above 25_C		600	mW/_C

Operating and Storage Junction Temperature Range	TJ, Tstg	± 65 to +150	_C

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Ambient	RqJA	62.5	_C/W
Thermal Resistance, Junction to Case	RqJC	1.67	_C/W
Maximum Lead Temperature for Soldering	TL	275	_C
Purposes: 1/8″ from Case for 5 Seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Designer's and SWITCHMODE are trademarks of Motorola, Inc.

REV 3

Motorola, Inc. 1995

MJE13005

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

	Characteristic	Symbol	Min	Typ		Max	Unit

*OFF CHARACTERISTICS

Collector±Emitter Sustaining Voltage		VCEO(sus)	400	Ð		Ð	Vdc
(IC = 10 mA, IB = 0)
Collector Cutoff Current		ICEV					mAdc
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)			Ð	Ð		1
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)			Ð	Ð		5
Emitter Cutoff Current		IEBO	Ð	Ð		1	mAdc
(VEB = 9 Vdc, IC = 0)
SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased		IS/b			See Figure 11
Clamped Inductive SOA with Base Reverse Biased		RBSOA			See Figure 12

*ON CHARACTERISTICS

DC Current Gain		hFE					Ð
(IC = 1 Adc, VCE = 5 Vdc)			10	Ð		60
(IC = 2 Adc, VCE = 5 Vdc)			8	Ð		40
Collector±Emitter Saturation Voltage		VCE(sat)					Vdc
(IC = 1 Adc, IB = 0.2 Adc)			Ð	Ð		0.5
(IC = 2 Adc, IB = 0.5 Adc)			Ð	Ð		0.6
(IC = 4 Adc, IB = 1 Adc)			Ð	Ð		1
(IC = 2 Adc, IB = 0.5 Adc, TC = 100_C)			Ð	Ð		1
Base±Emitter Saturation Voltage		VBE(sat)					Vdc
(IC = 1 Adc, IB = 0.2 Adc)			Ð	Ð		1.2
(IC = 2 Adc, IB = 0.5 Adc)			Ð	Ð		1.6
(IC = 2 Adc, IB = 0.5 Adc, TC = 100_C)			Ð	Ð		1.5
DYNAMIC CHARACTERISTICS

Current±Gain Ð Bandwidth Product		fT	4	Ð		Ð	MHz
(IC = 500 mAdc, VCE = 10 Vdc, f = 1 MHz)
Output Capacitance		Cob	Ð	65		Ð	pF
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
SWITCHING CHARACTERISTICS

Resistive Load (Table 2)

Delay Time		td	Ð	0.025		0.1	μs
Rise Time	(VCC = 125 Vdc, IC = 2 A,	t	Ð	0.3		0.7	μs
	IB1 = IB2 = 0.4 A, tp = 25 μs,	r
Storage Time	IB1 = IB2 = 0.4 A, tp = 25 μs,	ts	Ð	1.7		4	μs
Storage Time	Duty Cycle v 1%)	ts	Ð	1.7		4	μs
Fall Time		tf	Ð	0.4		0.9	μs
Inductive Load, Clamped (Table 2, Figure 13)

Voltage Storage Time	(IC = 2 A, Vclamp = 300 Vdc,	tsv	Ð	0.9		4	μs
Crossover Time	(IC = 2 A, Vclamp = 300 Vdc,	tc	Ð	0.32		0.9	μs
Crossover Time	IB1 = 0.4 A, VBE(off) = 5 Vdc, TC = 100_C)	tc	Ð	0.32		0.9	μs
Fall Time		tfi	Ð	0.16		Ð	μs

*Pulse Test: Pulse Width = 300 μs, Duty Cycle = 2%.

2	Motorola Bipolar Power Transistor Device Data

	100
	70			TJ = 150°C
GAIN	50			25°C
				25°C

CURRENT	30
CURRENT	20			± 55°C
, DC				± 55°C
, DC
FE
h	10		VCE = 2 V
	10

	7		VCE = 5 V
	5	0.06	0.1	0.2	0.4	0.6	1	2	4
	0.04	0.06	0.1	0.2	0.4	0.6	1	2	4

IC, COLLECTOR CURRENT (AMP)

Figure 1. DC Current Gain

(VOLTS)	1.3
			VBE(sat) @ IC/IB = 4
	1.1		VBE(on) @ VCE = 2 V
VOLTAGE	0.9			TJ = ± 55°C
, BASE±EMITTER				25°C
	0.7
				25°C
	0.5
BE				150°C
V				150°C
V
	0.3							2	4
	0.04	0.06	0.1	0.2	0.4	0.6	1	2	4

IC, COLLECTOR CURRENT (AMP)

Figure 3. Base±Emitter Voltage

	10 k
		VCE = 250 V
μA)	1 k
(
CURRENT		TJ = 150°C
	100	125°C
		100°C
, COLLECTOR		100°C
	10	75°C
	1	50°C
C	1
I		25°C
		25°C
	0.1	REVERSE		FORWARD
	0.1	± 0.2	0	+ 0.2	+ 0.4	+ 0.6
	± 0.4	± 0.2	0	+ 0.2	+ 0.4	+ 0.6

VBE, BASE±EMITTER VOLTAGE (VOLTS)

Figure 5. Collector Cutoff Region

								MJE13005
(VOLTS)	2
(VOLTS)									TJ = 25°C
VOLTAGE	1.6
		IC = 1 A		2 A	3 A		4 A
	1.2
, COLLECTOR±EMITTER	1.2
	0.8
	0.4

CE	0
V	0	0.05	0.1	0.2	0.3	0.5	0.7	1	2	3
	0.03	0.05	0.1	0.2	0.3	0.5	0.7	1	2	3
				IB, BASE CURRENT (AMP)

Figure 2. Collector Saturation Region

SATURATION		0.55
				IC/IB = 4
		0.45

COLLECTOR±EMITTER	VOLTAGE (VOLTS)	0.35							TJ = ± 55°C
		0.25					25°C
		0.25
		0.15
,									150°C
CE(sat)									150°C
CE(sat)
V		0.05
		0.05
		0.04	0.06	0.1	0.2	0.4	0.6	1	2	4
					IC, COLLECTOR CURRENT (AMP)

Figure 4. Collector±Emitter Saturation Voltage

	2 k
	1 k		Cib
(pF)	700
(pF)	500
CAPACITANCE	300
	200
	100
C,	100
C,	70
	70
	50
	30									Cob
	20	0.5	1	3	5	10	30	50	100	300
	0.3	0.5	1	3	5	10	30	50	100	300
			VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Capacitance

Motorola Bipolar Power Transistor Device Data

MJE13005
		ICPK		Vclamp
				Vclamp
		90% Vclamp	90% IC
IC	tsv	trv	tfi		tti
			tc
VCE		10% Vclamp		10%	2% IC
I	90% I			I	2% IC
B	B1			CPK
		TIME

Figure 7. Inductive Switching Measurements

Table 1. Typical Inductive Switching Performance

IC	TC	tsv	trv	tfi	tti	tc
AMP	_C	ns	ns	ns	ns	ns

2	25	600	70	100	80	180
	100	900	110	240	130	320

3	25	650	60	140	60	200
	100	950	100	330	100	350

4	25	550	70	160	100	220
4	25	550	70	160	100	220
	100	850	110	350	160	390

NOTE: All Data recorded in the inductive Switching Circuit In Table 2.

SWITCHING TIMES NOTE

In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined.

tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp trv = Voltage Rise Time, 10±90% Vclamp

tfi = Current Fall Time, 90±10% IC tti = Current Tail, 10±2% IC

tc = Crossover Time, 10% Vclamp to 10% IC

An enlarged portion of the inductive switching waveforms is shown in Figure 7 to aid in the visual identity of these terms.

For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN±222:

PSWT = 1/2 VCCIC(tc)f

In general, trv + tfi ] tc. However, at lower test currents this relationship may not be valid.

As is common with most switching transistors, resistive switching is specified at 25°C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a ªSWITCHMODEº transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100_C.

					RESISTIVE SWITCHING PERFORMANCE
	1								10
					VCC = 125 V					ts				VCC = 125 V
	0.5				IC/IB = 5				5					IC/IB = 5
			tr		TJ = 25°C									TJ = 25°C
			tr
μs)	0.2							μs)	2
μs)								μs)
(								(
TIMEt,	0.1							TIMEt,	1
	0.1								1
	0.05				td @ VBE(off) = 5 V				0.5
					td @ VBE(off) = 5 V
									0.3		tf
	0.02								0.2
	0.01	0.1	0.2	0.4	1	2	4		0.1	0.1	0.2	0.5	1	2	4
	0.04	0.1	0.2	0.4	1	2	4		0.04	0.1	0.2	0.5	1	2	4
			IC, COLLECTOR CURRENT (AMP)							IC, COLLECTOR CURRENT (AMP)

Figure 8. Turn±On Time

Figure 9. Turn±Off Time

4	Motorola Bipolar Power Transistor Device Data

Table 2. Test Conditions for Dynamic Performance

REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING

						+ 5 V	VCC
						33	VCC
					1N4933	33
					1N4933	MJE210
						MJE210	L
				0.001 μF			L	MR826*
				0.001 μF	33 1N4933			MR826*
CIRCUITS	DUTY CYCLE ≤ 10%			68	33 1N4933			*SELECTED FOR ≥	1 kV
			5 V		2N2222		IC	Vclamp
			P		2N2222	R	IC	Vclamp
			W			R
				1 k		B
				1 k
TEST			tr, tf ≤ 10 ns		1 k	I		5.1 k
TEST				+ 5 V		B		VCE
						B

					1 k	T.U.T.		51
				1N4933	1 k	T.U.T.
				0.02 μF 270	2N2905	MJE200
				0.02 μF 270	47	MJE200
	NOTE				47	100
	PW and VCC Adjusted for Desired IC				1/2 W	± VBE(off)
	R	B	Adjusted for Desired I			± VBE(off)
CIRCUIT VALUES		B		B1
CIRCUIT VALUES			Coil Data:		GAP for 200 μH/20 A			VCC = 20 V
			Coil Data:
			Ferroxcube Core #6656
			Ferroxcube Core #6656		Lcoil	= 200 μH		Vclamp = 300 Vdc
			Full Bobbin (~16 Turns) #16		Lcoil	= 200 μH		Vclamp = 300 Vdc
			Full Bobbin (~16 Turns) #16

OUTPUT WAVEFORMS

WAVEFORMS

tf CLAMPED

VCC

475 or Equivalent

tf UNCLAMPED ≈ t2

t1 ADJUSTED TO

IC(pk)

OBTAIN IC

Test Equipment

Lcoil (IC )

TEST

VCE

t ≈

Scope±Tektronics

Lcoil (ICpk)

VCE or

t2 ≈

Vclamp

TIME

MJE13005

RESISTIVE

SWITCHING

+125 V

	TUT
RB	SCOPE

± 4.0 V

VCC = 125 V

RC = 62 Ω

D1 = 1N5820 or Equiv. RB = 22 Ω

+10 V

25 μs

± 8 V

tr, tf < 10 ns

Duty Cycle = 1.0% RB and RC adjusted for desired IB and IC

		1
TRANSIENT THERMAL RESISTANCE		0.7	D = 0.5
		0.5	D = 0.5
		0.5
		0.3	0.2
	(NORMALIZED)	0.2	0.2
		0.2
		0.1	0.1
		0.1								ZθJC(t) = r(t) RθJC				P(pk)
			0.05											P(pk)
		0.07
		0.07								RθJC = 1.67°C/W MAX
		0.05								RθJC = 1.67°C/W MAX
		0.05	0.02							D CURVES APPLY FOR POWER
										D CURVES APPLY FOR POWER
		0.03								PULSE TRAIN SHOWN				t1
		0.03								PULSE TRAIN SHOWN				t1
		0.02				0.01				READ TIME AT t1					t2
r(t),			SINGLE PULSE							TJ(pk) ± TC = P(pk) ZθJC(t)				DUTY CYCLE, D = t1/t2
		0.01	SINGLE PULSE											DUTY CYCLE, D = t1/t2
		0.01
		0.01	0.02	0.05	0.1	0.2	0.5	1	2	5	10	20	50	100	200	500	1 k

t, TIME (ms)

Figure 10. Typical Thermal Response [ZθJC(t)]

Motorola Bipolar Power Transistor Device Data

MJE13005

The Safe Operating Area Figures 11 and 12 are specified ratings for these devices under the test conditions shown.

	10
(AMP)	5
(AMP)	2						5 ms		500 μs
CURRENT	1					dc
	1
	0.5

, COLLECTOR	0.2								1 ms
	0.2
	0.1
	0.05
C
I
	0.02								MJE13005
	0.01								MJE13005
	0.01	7	10
	5	7	10	20	30	50	70	100	200	300	500
			VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)								400
			VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 11. Forward Bias Safe Operating Area

	4
(AMP)							TC ≤ 100°C
(AMP)	3						IB1 = 2.0 A
CURRENT	3
CURRENT	2
COLLECTOR	2						VBE(off) = 9 V
							VBE(off) = 9 V
	1
,
C(pk)				MJE13005				5 V
C(pk)								3 V
I

	0							1.5 V
	0
	0	100	200	300	400	500	600	700	800
		VCE, COLLECTOR±EMITTER CLAMP VOLTAGE (VOLTS)

Figure 12. Reverse Bias Switching

Safe Operating Area

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 11 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 11 may be found at any case temperature by using the appropriate curve on Figure 13.

TJ(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be sustained simultaneously during turn±off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage±current conditions during reverse biased turn±off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 12 gives the complete RBSOA characteristics.

	1
					SECOND BREAKDOWN
FACTOR	0.8					DERATING
FACTOR	0.6
DERATING	0.6		THERMAL
			THERMAL
			DERATING
	0.4
POWER	0.2
	0.2
	0	40	60	80	100	120	140	160
	20	40	60	80	100	120	140	160
			TC, CASE TEMPERATURE (°C)

Figure 13. Forward Bias Power Derating

6	Motorola Bipolar Power Transistor Device Data

MJE13005

PACKAGE DIMENSIONS

				±T±
	B		F	C
			T	S
4
Q			A
1	2	3	U
H
Z			K
Z
L				R
V				J
G
			D
	N

SEATING PLANE

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.570	0.620	14.48	15.75
B	0.380	0.405	9.66	10.28
C	0.160	0.190	4.07	4.82
D	0.025	0.035	0.64	0.88
F	0.142	0.147	3.61	3.73
G	0.095	0.105	2.42	2.66
H	0.110	0.155	2.80	3.93
J	0.018	0.025	0.46	0.64
K	0.500	0.562	12.70	14.27
L	0.045	0.060	1.15	1.52
N	0.190	0.210	4.83	5.33
Q	0.100	0.120	2.54	3.04
R	0.080	0.110	2.04	2.79
S	0.045	0.055	1.15	1.39
T	0.235	0.255	5.97	6.47
U	0.000	0.050	0.00	1.27
V	0.045	±±±	1.15	±±±
Z	±±±	0.080	±±±	2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

CASE 221A±06

TO±220AB

ISSUE Y

Motorola Bipolar Power Transistor Device Data

MJE13005

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
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IC	TC	tsv	trv	tfi	tti	tc
AMP	_C	ns	ns	ns	ns	ns

2	25	600	70	100	80	180
	100	900	110	240	130	320

3	25	650	60	140	60	200
	100	950	100	330	100	350

4	25	550	70	160	100	220
4	25	550	70	160	100	220
	100	850	110	350	160	390

IC	TC	tsv	trv	tfi	tti	tc
AMP	_C	ns	ns	ns	ns	ns

2	25	600	70	100	80	180
	100	900	110	240	130	320

3	25	650	60	140	60	200
	100	950	100	330	100	350

4	25	550	70	160	100	220
4	25	550	70	160	100	220
	100	850	110	350	160	390

IC	TC	tsv	trv	tfi	tti	tc
AMP	_C	ns	ns	ns	ns	ns

2	25	600	70	100	80	180
	100	900	110	240	130	320

3	25	650	60	140	60	200
	100	950	100	330	100	350

4	25	550	70	160	100	220
4	25	550	70	160	100	220
	100	850	110	350	160	390