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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N6251/D

High Voltage NPN Silicon Power

Transistors

. . . designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications.

•High Voltage Breakdown Rating

•Low Saturation Voltages

•Fast Switching Capability

•High ES/b Energy Handling Capability

MAXIMUM RATINGS

Rating	Symbol	Value	Unit

Collector±Emitter Voltage (1)	VCEO(sus)	350	Vdc
Collector±Emitter Voltage (1)	VCER(sus)	375	Vdc
Collector±Base Voltage (1)	VCB	450	Vdc
Emitter±Base Voltage	VEB	6.0	Vdc
Collector Current Ð Continuous**	IC	15	Adc
Ð Peak	ICM	30
Base Current Ð Continuous (1)	IB	10	Adc
Ð Peak	IBM	20
Emitter Current Ð Continuous	IE	25	Adc
Ð Peak	IEM	50
Total Power Dissipation @ TC = 25_C	PD	175	Watts
@ TC = 100_C		100
Derate above 25_C*		1.0	_
			W/ C
Operating and Storage Junction (1)	TJ, Tstg	± 65 to +200	_C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RθJC	1.0	_C/W
Maximum Lead Temperature for Soldering	TL	275	_C
Purposes: 1/8º from Case for 5 Seconds

(1)Indicates JEDEC Registered Data.

**JEDEC Registered Value is 10 A, Motorola Guaranteed Value is 15 A.

2N6251

15 AMPERE

POWER TRANSISTOR

NPN SILICON

350 VOLTS

175 WATTS

CASE 1±07 TO±204AA (TO±3)

	100
(%)	80			SECOND BREAKDOWN
FACTOR	80				DERATING
					DERATING
	60		THERMAL
DERATING			THERMAL
			DERATING
			DERATING
	40
POWER	20
	20
	0	40	80	120	160	200
	0	40	80	120	160	200
			TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

REV 1

Motorola, Inc. 1995

						2N6251
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

	Characteristic		Symbol	Min	Max		Unit

Collector±Emitter Sustaining Voltage (Table 1)			VCEO(sus)	350	Ð		Vdc
(IC = 200 mA, IB = 0)
Collector±Emitter Sustaining Voltage (Table 1)			VCER(sus)	375	Ð		Vdc
(IC = 200 mA)
Collector Cutoff Current			ICEV				mAdc
(VCE = Rated VCER, VBE(off) = 1.5 Vdc)				Ð	5.0
(VCE = Rated VCER, VBE(off) = 1.5 Vdc, TC = 125_C)				Ð	10
Collector Cutoff Current			ICEO	Ð	5.0		mAdc
(VCE = 150 Vdc, IB = 0)
(VCE = 225 Vdc, IB = 0)
(VCE = 300 Vdc, IB = 0)
Emitter Cutoff Current			IEBO	Ð	1.0		mAdc
(VEB = 6.0 Vdc, IC = 0)
SECOND BREAKDOWN

Second Breakdown Collector Current with base forward		(VCE = 30 V)	IS/b	5.8	Ð		Vdc
biased t = 1.0s (non±repetitive)		(VCE = 100 V)		0.3	Ð
Second Breakdown Energy with base reverse biased (Table 1)			ES/b	2.5	Ð		mJ
(IC = 10 A, VBE(off) = 4.0 Vdc, L = 50 μH)
ON CHARACTERISTICS (1)

DC Current Gain			hFE	6.0	50		Ð
(IC = 10 Adc, VCE = 3.0 Vdc)
Collector±Emitter Saturation Voltage			VCE(sat)	Ð	1.5		Vdc
(IC = 10 Adc, IB = 1.67 Adc)
Base±Emitter Saturation Voltage			VBE(sat)	Ð	2.5		Vdc
(IC = 10 Adc, IB = 1.0 Adc)
(IC = 10 Adc, IB = 1.25 Adc)
(IC = 10 Adc, IB = 1.67 Adc)
DYNAMIC CHARACTERISTICS

Current±Gain Ð Bandwidth Product			fT	2.5	Ð		MHz
(IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz)
SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Rise Time	(VCC = 200 Vdc, IC = 10 A, Duty		tr	Ð	2.0		μs
Storage Time	Cycle v 2.0%, tp = 100 μs)		ts	Ð	3.5		μs
Fall Time	(IB1 = IB2 = 1.67 Adc)		tf	Ð	1.0		μs
Fall Time			tf	Ð	1.0		μs

* Indicates JEDEC Registered Data.

(1) Measured on a curve tracer (60 Hz full±wave rectified sine wave).

Motorola Bipolar Power Transistor Device Data

3±105

2N6251

Table 1. Test Conditions for Dynamic Performance

			VCEO(sus)				VCER(sus)				ES/b						RESISTIVE SWITCHING
																	50 μF	+ 15 V
				39				39						50	1		50 μF	TIP41B
				39	1
		+6.0 V			1				1		IB1 = 2.0 A
INPUT CONDITIONS		+6.0 V				+6.0 V			1		IB1 = 2.0 A							4.7	1
						+6.0 V										51	51
									51						50
		0							51		+10 V				50			0.02
		0				0					+10 V							0.02
					2	0												μF	2
									2									μF
										0				4 V
															2
																	IC = 10 A


																	PW ≈ 100 μs
																	PW ≈ 100 μs
																	tr ≤ 5 ns
																	tf ≤ 50 ns
																	DUTY CYCLE ≤ 2%
CIRCUIT VALUES			Lcoil = 42 mH				Lcoil = 14 mH
			Lcoil = 42 mH				Rcoil = 0.05	Ω			Lcoil = 50 μH, VCC = 11.5 V						VCC = 200 V
			Rcoil = 0.7 Ω, fo = 60 Hz				Rcoil = 0.05				Lcoil = 50 μH, VCC = 11.5 V						VCC = 200 V
			Rcoil = 0.7 Ω, fo = 60 Hz				VCC = 0 to 50 V				Rcoil = 0.2 Ω						RL = 20 Ω
			VCC = 0 to 50 V				VCC = 0 to 50 V				Rcoil = 0.2 Ω						RL = 20 Ω
			VCC = 0 to 50 V				fo = 60 Hz
			INDUCTIVE TEST CIRCUIT					OUTPUT WAVEFORMS									RESISTIVE TEST CIRCUIT
			TUT				IC					t	Adjusted to					+ 200 V
			TUT			Rcoil						1
						Rcoil						Obtain I
	CIRCUITS	1		1N4937				IC(pk)						C			20
				1N4937				IC(pk)						Lcoil (ICpk)			20	DC
						L												DC
						L					t	t1						CURRENT
				VCL		coil					t	t1	[	VCC				CURRENT
				VCL					t1	tf				VCC		1		PROBE
		2		RS		VCC			t1	tf						1	3	TUT
	TEST	2		0.1													3
				0.1			VCE
																2
																2
											t						25
											t
			NOTE: SET IC(pk) TO OBTAIN IC = 200 mA AT VCEO(sus) EQUAL TO RATED VALUE.														± 6.0 V
			NOTE: ADJUST VClamp VOLTAGE FOR VCEO(sus) RATED VALUE.
		1.0
TRANSIENT THERMAL RESISTANCE		0.7	D = 0.5
		0.5	D = 0.5
		0.5
		0.3	0.2
		0.2	0.2
	(NORMALIZED)	0.2
			0.1							ZθJC(t) = r(t) RθJC						P(pk)
		0.1								ZθJC(t) = r(t) RθJC						P(pk)
		0.1	0.05							RθJC = 1.0°C/W MAX
		0.07	0.05							RθJC = 1.0°C/W MAX
		0.07								D CURVES APPLY FOR POWER
		0.05								D CURVES APPLY FOR POWER
		0.05	0.02							PULSE TRAIN SHOWN							t1
			0.02							READ TIME AT t1							t1
		0.03								READ TIME AT t1							t2
		0.02	0.01							TJ(pk) ± TC = P(pk) ZθJC(t)						DUTY CYCLE, D = t1/t2
r(t),		0.02	0.01	SINGLE PULSE												DUTY CYCLE, D = t1/t2
r(t),				SINGLE PULSE
		0.01	0.02	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10	20			50	100	200	500	1.0 k
		0.01	0.02	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10	20			50	100	200	500	1.0 k

t, TIME (ms)

Figure 2. Thermal Response

	30											20 μs
	20								500 μs 100 μs			20 μs
(AMP)	10								1.0
(AMP)	5.0							10 ms	ms
CURRENT	3.0		dc	TC = 25°C
	2.0			TC = 25°C				50 ms
	2.0			TC = 100°C				50 ms
	1.0			TC = 100°C
COLLECTOR	1.0
	0.5
	0.3				TC = 25°C UNLESS NOTED
	0.2				TC = 25°C UNLESS NOTED
	0.2				BONDING WIRE LIMIT
					BONDING WIRE LIMIT
,	0.1
C	0.1				THERMAL LIMIT, SINGLE PULSE
I					THERMAL LIMIT, SINGLE PULSE
	0.05				SECOND BREAKDOWN LIMIT
	0.05
	0.03	5.0	7.0	10	20	30	50	70	100	200	300		500
				VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 3. Active±Region Safe Operating Area

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 3 is based on TC = 25_C. TJ(pk) is variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated when TC w 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltage shown on Figure 3 may be found at any case temperature by using the appropriate curve on Figure 1.

TJ(pk) may be calculated from the data in Figure 2. At high case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations imposed by second breakdown.

3±106

Motorola Bipolar Power Transistor Device Data

2N6251

DC CHARACTERISTICS

	100											(VOLTS)	2.0
	70				TJ = 150°C							(VOLTS)								TJ = 25°C
					TJ = 150°C							VOLTAGE	1.6							TJ = 25°C
CURRENT GAIN	50												1.6
	50
	30					25°C							1.2	IC = 2.0 A		6.0 A		10 A		15A
	30
	20
	20
													0.8
, DC						± 55°C						COLLECTOR±EMITTER	0.8
, DC
FE
FE	10
h	10												0.4
						VCE = 3.0 V							0.4
	7.0					VCE = 3.0 V
	7.0					VCE = 10 V						,
						VCE = 10 V						CE
	5.0											CE
	5.0	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	20	V	0	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0
	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	20		0.07 0.1	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0
				IC, COLLECTOR CURRENT (AMP)											IB, BASE CURRENT (mA)

Figure 4. DC Current Gain

Figure 5. Collector Saturation Region

V, VOLTAGE (VOLTS)

1.4

TJ = 25°C

1.2

1.0

VBE(sat) @ IC/IB = 5.0

0.8

0.6VBE(on) @ VCE = 3.0 V

0.4

0.2VCE(sat) @ IC/IB = 5

0
0	0.2	0.3	0.5	1.0	2.0	3.0	5.0	7.0	10	20
				IC, COLLECTOR CURRENT (AMP)

θV, TEMPERATURE COEFFICIENTS (mV/°C)

2.5

2.0

1.5

1.0

0.5

±0.5

±1.0

±1.5

±2.0

±2.5

*APPLIES

FOR

≤

hFE

@ V

CE + 3.0

*θVC for

CE(sat)

°C to 150°

± 55°C to 25°

25°C to 150°C

θVB for VBE

± 55°C to

°C

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

IC, COLLECTOR CURRENT (AMP)

Figure 6. ªOnº Voltagae

Figure 7. Temperature Coefficients

RESISTIVE SWITCHING PERFORMANCE

t, TIME (ns)

3.0 k
3.0 k												VCC	=	200		V
2.0 k						tr						VCC	=	200		V
						tr						IC/IB	=	5.0
1.0 k												TJ =	25°C
700


500
500
300
300		td	@	V	BE(off) =			5.0 V
200		td	@	V	BE(off) =			5.0 V
100
100
70


50
50
30

	0.05			0.1			0.2		0.5	1.0	2.0	5.0			10		20
0.02	0.05			0.1			0.2		0.5	1.0	2.0	5.0			10		20

IC, COLLECTOR CURRENT (AMP)

Figure 8. Turn-on Time

t, TIME (ns)

10 k
7.0 k
7.0 k
5.0 k
5.0 k				ts
				ts
3.0 k
3.0 k
2.0 k
2.0 k

1.0 k							V	CC = 200		V
1.0 k								CC = 200		V
700				tr			IC/IB = 5.0
700							IB1		= IB2
500							IB1		= IB2
500							TJ = 25°C
300							TJ = 25°C
300
200
200
100

	0.05	0.1	0.2		0.5	1.0			2.0	5.0	10	20
0.02	0.05	0.1	0.2		0.5	1.0			2.0	5.0	10	20

IC, COLLECTOR CURRENT (AMP)

Figure 9. Turn-off Time

Motorola Bipolar Power Transistor Device Data

3±107

2N6251

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

±T±

SEATING

2. CONTROLLING DIMENSION: INCH.

PLANE

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO±204AA OUTLINE SHALL APPLY.

D 2 PL

INCHES

MILLIMETERS

0.13 (0.005) M

DIM

MIN

MAX

MIN

MAX

1.550 REF

39.37 REF

±Y±

±±±

1.050

±±±

26.67

0.250

0.335

6.35

8.51

0.038

0.043

0.97

1.09

0.055

0.070

1.40

1.77

0.430 BSC

10.92 BSC

0.215 BSC

5.46 BSC

0.440

0.480

11.18

12.19

0.665 BSC

16.89 BSC

±Q±

±±±

0.830

±±±

21.08

0.13 (0.005) M

0.151

0.165

3.84

4.19

1.187 BSC

30.15 BSC

0.131

0.188

3.33

4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

CASE 1±07

TO±204AA (TO±3)

ISSUE Z

3±108

Motorola Bipolar Power Transistor Device Data

2N6251

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
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*2N6251/D*

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